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    Remover compositions for dual damascene system
    2.
    发明授权
    Remover compositions for dual damascene system 有权
    双重镶嵌系统的卸妆组合物

    公开(公告)号：US07547669B2

    公开(公告)日：2009-06-16

    申请号：US11119844

    申请日：2005-05-02

    申请人： Wai Mun Lee

    发明人： Wai Mun Lee

    IPC分类号： C11D7/50

    CPC分类号： G03F7/423 ,  C23F1/34 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/31133 ,  H05K3/26

    摘要： A new remover chemistry based on a choline compound, such as choline hydroxide, is provided in order to address problems related to removal of residues, modified photoresists, photoresists, and polymers such as organic anti-reflective coatings and gap-fill and sacrificial polymers from surfaces involved in dual damascene structures without damaging the dielectrics and substrates involved therein. An etch stop inorganic layer at the bottom of a dual damascene structure may or may not be used to cover the underlying interconnect of copper. If not used, a process step of removing that protective layer can be avoided through a timed etch of the via in trench-first dual damascene processes.

    摘要翻译： 提供了基于胆碱化合物（例如氢氧化胆碱）的新的去除剂化学品，以便解决与去除残留物，改性光致抗蚀剂，光致抗蚀剂和聚合物相关的问题，例如有机抗反射涂层和间隙填充和牺牲聚合物， 涉及双镶嵌结构的表面，而不损害其中涉及的电介质和基底。 在双镶嵌结构底部的蚀刻停止无机层可以或不用于覆盖铜的下面的互连。 如果不使用，则可以通过沟槽第一双镶嵌工艺中的通孔的定时蚀刻来避免去除该保护层的工艺步骤。

    Semiconductor process residue removal composition and process
    3.
    发明授权
    Semiconductor process residue removal composition and process 失效
    半导体工艺残渣去除组成和工艺

    公开(公告)号：US07528098B2

    公开(公告)日：2009-05-05

    申请号：US10995239

    申请日：2004-11-24

    申请人： Wai Mun Lee ,  Katy Ip ,  Xuan-Dung Dinh ,  David John Maloney

    发明人： Wai Mun Lee ,  Katy Ip ,  Xuan-Dung Dinh ,  David John Maloney

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02071 ,  C11D3/30 ,  C11D7/3218 ,  C11D11/0047 ,  G03F7/425

    摘要： A residue remover for removing polymeric material and etch residue includes 2-(2-aminoethylamino)-ethanol and optionally another two-carbon atom linkage alkanolamine compound, gallic acid or catechol, water, a polar organic solvent, and hydroxylamine. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, includes the steps of contacting the substrate with the above composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of 2-(2-aminoethylamino)-ethanol in the composition and process provides superior residue removal without attacking titanium or other metallurgy on the substrate. The composition preferably has a flash point greater than about 130° C.

    摘要翻译： 用于除去聚合物材料和蚀刻残渣的残留物除去剂包括2-（2-氨基乙基氨基） - 乙醇和任选的另外的两个碳原子键链烷醇胺化合物，没食子酸或邻苯二酚，水，极性有机溶剂和羟胺。 用于从衬底（例如包括钛冶金的集成电路半导体晶片）去除光致抗蚀剂或其它残留物的方法包括以下步骤：将衬底与上述组合物接触一段时间并在足以将光致抗蚀剂或其它残余物除去的温度 底物。 在组合物和方法中使用2-（2-氨基乙基氨基） - 乙醇提供优异的残余物去除而不侵蚀基材上的钛或其他冶金。 组合物优选具有大于约130℃的闪点

    Compositions and methods for rapidly removing overfilled substrates
    5.
    发明授权
    Compositions and methods for rapidly removing overfilled substrates 失效
    用于快速去除过度填充底物的组合物和方法

    公开(公告)号：US07419911B2

    公开(公告)日：2008-09-02

    申请号：US10984820

    申请日：2004-11-10

    申请人： Philippe H. Chelle ,  Robert J. Small

    发明人： Philippe H. Chelle ,  Robert J. Small

    IPC分类号： B08B1/00

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F1/18 ,  C23F3/06

    摘要： This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates. Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide, periodic acid, and peracetic acid, and may also optionally contain an abrasive.

    摘要翻译： 本发明涉及用于去除过度填充底物的组合物和方法，优选以相对高的去除速率。 有利地，根据本发明的组合物可以含有氧化剂，优选的是每种类型的氧化剂，例如过氧化物，高碘酸和过乙酸，并且还可以任选地含有研磨剂。

    Aqueous phosphoric acid compositions for cleaning semiconductor devices
    6.
    发明授权
    Aqueous phosphoric acid compositions for cleaning semiconductor devices 有权
    用于清洁半导体器件的磷酸水溶液组合物

    公开(公告)号：US07235188B2

    公开(公告)日：2007-06-26

    申请号：US10688900

    申请日：2003-10-21

    申请人： Jerome Daviot ,  Christopher Reid ,  Douglas Holmes

    发明人： Jerome Daviot ,  Christopher Reid ,  Douglas Holmes

    IPC分类号： C09K13/00

    CPC分类号： H01L21/02071 ,  C11D7/06 ,  C11D7/08 ,  C11D7/3218 ,  C11D7/3227 ,  C11D7/3281 ,  C11D11/0047

    摘要： The present invention relates to dilute aqueous solutions containing phosphoric acid and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The solution according to the invention may advantageous contain an alkaline compound, one or more other acid compounds, and/or a fluoride-containing compound and may optionally contain additional components such as organic solvents, chelating agents, amines, and/or surfactants.

    摘要翻译： 本发明涉及含有磷酸的稀释水溶液和用于从包括这种稀水溶液的半导体衬底清洗等离子体蚀刻残留物的方法。 根据本发明的溶液可以有利地含有碱性化合物，一种或多种其它酸化合物和/或含氟化合物，并且可以任选地含有另外的组分如有机溶剂，螯合剂，胺和/或表面活性剂。

    Load lock system for supercritical fluid cleaning
    7.
    发明授权
    Load lock system for supercritical fluid cleaning 失效
    超临界流体清洗装载锁系统

    公开(公告)号：US07226512B2

    公开(公告)日：2007-06-05

    申请号：US10465906

    申请日：2003-06-18

    申请人： Michael A. Fury ,  Robert W. Sherrill

    发明人： Michael A. Fury ,  Robert W. Sherrill

    IPC分类号： B08B5/04

    CPC分类号： H01L21/67167 ,  H01L21/67017 ,  H01L21/67201 ,  H01L21/67745 ,  Y10S134/902 ,  Y10S414/138 ,  Y10S414/139 ,  Y10S414/141

    摘要： A substrate is transferred from an environment at about vacuum into a load lock through a first door. The substrate is then sealed within the load lock. The pressure within the load lock is raised to a high pressure above vacuum. A second door coupling the load lock to a high-pressure processing chamber is then opened and the substrate moved from the load lock into the high-pressure chamber. The substrate is then sealed within the high-pressure chamber. High-pressure processing, such as high pressure cleaning or high pressure deposition, is then performed on the substrate within the high-pressure chamber. Subsequently, the second door is opened and the substrate transferred into the load lock. The substrate is then sealed within the load lock. The pressure within the load lock is lowered to about vacuum and the first door opened. The substrate is then removed from the load lock into the environment.

    摘要翻译： 将基板从大约真空的环境转移到通过第一门的加载锁定中。 然后将衬底密封在装载锁中。 负载锁中的压力升高到高于真空的高压。 然后打开将负载锁耦合到高压处理室的第二扇门，并且衬底从负载锁移动到高压室中。 然后将衬底密封在高压室内。 然后在高压室内的基板上进行高压处理，例如高压清洗或高压沉积。 随后，打开第二扇门并将基板转移到装载锁中。 然后将衬底密封在装载锁中。 负载锁中的压力降低到大约真空，第一门打开。 然后将衬底从负载锁移除到环境中。

    Chemical mechanical polishing composition and process
    9.
    发明申请
    Chemical mechanical polishing composition and process 有权

    公开(公告)号：US20030176068A1

    公开(公告)日：2003-09-18

    申请号：US10401405

    申请日：2003-03-27

    申请人： EKC Technology, Inc.

    发明人： Robert J. Small ,  Laurence McGhee ,  David J. Maloney ,  Maria L. Peterson

    IPC分类号： H01L021/8238 ,  H01L021/302 ,  H01L021/461

    CPC分类号： C09G1/02 ,  C09K13/00 ,  C09K13/06 ,  C23F3/00 ,  H01L21/02074 ,  H01L21/3212 ,  Y10S438/959

    摘要： A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.