Method and system for converting time intervals
    2.
    发明授权
    Method and system for converting time intervals 有权
    转换时间间隔的方法和系统

    公开(公告)号:US08174426B2

    公开(公告)日:2012-05-08

    申请号:US12887567

    申请日:2010-09-22

    申请人: Stephan Henzler

    发明人: Stephan Henzler

    IPC分类号: H03M1/50

    CPC分类号: G04F10/005

    摘要: A method and a system for converting time intervals are provided. In one embodiment, the system comprises a first time-to-digital converter having a first resolution configured to convert a first time interval, a second time-to-digital converter having a second resolution configured to convert a second time interval, and a third time-to-digital converter having a third resolution and coupled to the first time-to-digital converter and the second time-to-digital converter, the third time-to-digital converter configured to convert a third time interval and a fourth time interval.

    摘要翻译: 提供了一种用于转换时间间隔的方法和系统。 在一个实施例中,该系统包括具有被配置为转换第一时间间隔的第一分辨率的第一时间数字转换器,具有被配置为转换第二时间间隔的第二分辨率的第二时间数字转换器,以及第三时间 时间数字转换器,其具有第三分辨率并耦合到第一时间数字转换器和第二时间 - 数字转换器,第三时间数字转换器被配置为将第三时间间隔和第四时间 间隔。

    Method for producing an insulation layer between two electrodes
    6.
    发明授权
    Method for producing an insulation layer between two electrodes 有权
    用于在两个电极之间制造绝缘层的方法

    公开(公告)号:US08637367B2

    公开(公告)日:2014-01-28

    申请号:US13207056

    申请日:2011-08-10

    申请人: Martin Poelzl

    发明人: Martin Poelzl

    IPC分类号: H01L21/336

    摘要: Method for producing an insulation layer between a first electrode and a second electrode in a trench of a semiconductor body, wherein the method comprises the following features: providing a semiconductor body with a trench formed therein, wherein a first electrode is formed in a lower part of the trench, producing an insulation layer on the first electrode and at the sidewalls of the trench in an upper part of the trench in such a way that the insulation layer is formed in a U-shaped fashion in the trench, producing a protective layer on the insulation layer at least at the bottom of the remaining void in the trench, removing the insulation layer at the sidewalls of the trench in the upper part of the trench, removing the protective layer, producing a second electrode at least on the insulation layer above the first electrode.

    摘要翻译: 一种在半导体主体的沟槽中的第一电极和第二电极之间制造绝缘层的方法,其中所述方法包括以下特征:提供半导体本体,其中形成有沟槽,其中第一电极形成在下部 在沟槽的上部的第一电极和沟槽的侧壁处产生绝缘层,使得绝缘层在沟槽中形成为U形形式,从而产生保护层 至少在沟槽中的剩余空隙的底部的绝缘层上,去除沟槽上部沟槽侧壁处的绝缘层,去除保护层,至少在绝缘层上产生第二电极 在第一电极之上。