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    EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS
    3.
    发明申请
    EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS 有权
    排放调谐方法和装置制造用途方法

    公开(公告)号：US20090261358A1

    公开(公告)日：2009-10-22

    申请号：US12414457

    申请日：2009-03-30

    申请人： ASHAY CHITNIS ,  JOHN EDMOND ,  JEFFREY CARL BRITT ,  BERND P. KELLER ,  DAVID TODD EMERSON ,  MICHAEL JOHN BERGMANN ,  JASPER S. CABALU

    发明人： ASHAY CHITNIS ,  JOHN EDMOND ,  JEFFREY CARL BRITT ,  BERND P. KELLER ,  DAVID TODD EMERSON ,  MICHAEL JOHN BERGMANN ,  JASPER S. CABALU

    IPC分类号： H01L33/00 ,  H01L21/66 ,  B23B47/00

    CPC分类号： H01L33/508 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2933/0041 ,  Y10T408/47

    摘要： A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.

    摘要翻译： 一种用于制造发光二极管（LED）芯片的方法，包括通常在晶片上提供多个LED，并用转换材料涂覆LED，使得来自LED的至少一些光通过转换材料并被转换。 来自LED芯片的光发射包括来自转换材料的光，通常与LED光结合。 测量至少一些LED芯片的发射特性，并且除去LED上的至少一些转换材料以改变LED芯片的发射特性。 本发明特别适用于在晶片上制造LED芯片，其中LED芯片具有在目标发射特性范围内的发光特性。 该目标范围可以落在CIE曲线上的发射区域内，以减少对来自晶片的LED进行合并的需要。 晶片上的LED芯片的发射特性可以通过在LED上微转换材料来调节到期望的范围。

    Emission tuning methods and devices fabricated utilizing methods
    4.
    发明授权
    Emission tuning methods and devices fabricated utilizing methods 有权
    使用方法制造的排放调节方法和装置

    公开(公告)号：US08877524B2

    公开(公告)日：2014-11-04

    申请号：US12414457

    申请日：2009-03-30

    申请人： Ashay Chitnis ,  John Edmond ,  Jeffrey Carl Britt ,  Bernd P. Keller ,  David Todd Emerson ,  Michael John Bergmann ,  Jasper S. Cabalu

    发明人： Ashay Chitnis ,  John Edmond ,  Jeffrey Carl Britt ,  Bernd P. Keller ,  David Todd Emerson ,  Michael John Bergmann ,  Jasper S. Cabalu

    IPC分类号： H01L21/66 ,  H01L33/00 ,  H01L33/50

    CPC分类号： H01L33/508 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2933/0041 ,  Y10T408/47

    摘要： A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.

    摘要翻译： 一种用于制造发光二极管（LED）芯片的方法，包括通常在晶片上提供多个LED，并用转换材料涂覆LED，使得来自LED的至少一些光通过转换材料并被转换。 来自LED芯片的光发射包括来自转换材料的光，通常与LED光结合。 测量至少一些LED芯片的发射特性，并且除去LED上的至少一些转换材料以改变LED芯片的发射特性。 本发明特别适用于在晶片上制造LED芯片，其中LED芯片具有在目标发射特性范围内的发光特性。 该目标范围可以落在CIE曲线上的发射区域内，以减少对来自晶片的LED进行合并的需要。 晶片上的LED芯片的发射特性可以通过在LED上微转换材料来调节到期望的范围。

    Optical devices featuring textured semiconductor layers
    7.
    发明授权
    Optical devices featuring textured semiconductor layers 有权
    具有纹理化半导体层的光学器件

    公开(公告)号：US07777241B2

    公开(公告)日：2010-08-17

    申请号：US11107150

    申请日：2005-04-15

    申请人： Theodore D. Moustakas ,  Jasper S. Cabalu

    发明人： Theodore D. Moustakas ,  Jasper S. Cabalu

    IPC分类号： H01L33/22

    CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/184 ,  H01L31/1852 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

    摘要： A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for growing and texturing other semiconductor layers from the device. The textured layers are replicated to the surface from the substrate to enhance light extraction or light absorption. Multiple quantum wells, comprising several barrier and quantum well layers, are deposited as alternating textured layers. The texturing in the region of the quantum well layers greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. This is the case in nitride semiconductors grown along the polar [0001] or [000-1] directions.

    摘要翻译： 因此，半导体传感器，太阳能电池或发射器或前体具有沉积到衬底上的衬底和织构化的半导体层。 该层可以通过在基底上生长而纹理化，或通过复制纹理化的衬底表面进行纹理化。 然后，衬底或第一层是用于从器件生长和纹理化其它半导体层的模板。 纹理层从衬底复制到表面以增强光提取或光吸收。 包含多个势垒层和量子阱层的多个量子阱被沉积为交替纹理层。 如果半导体是极性的并且量子阱沿着极化方向生长，量子阱层区域中的纹理大大提高了内部量子效率。 在沿极化[0001]或[000-1]方向生长的氮化物半导体中是这种情况。