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    THIN FILM SOLAR CELL HAVING ADJUSTABLE OR DESIGNABLE PATTERNS
    2.
    发明申请
    THIN FILM SOLAR CELL HAVING ADJUSTABLE OR DESIGNABLE PATTERNS 审中-公开
    薄膜太阳能电池具有可调节或可指定的图案

    公开(公告)号：US20120048361A1

    公开(公告)日：2012-03-01

    申请号：US13017404

    申请日：2011-01-31

    Applicant: YEE SHYI CHANG ,  YUHAI LIU ,  CHI-JEN LIU

    Inventor： YEE SHYI CHANG ,  YUHAI LIU ,  CHI-JEN LIU

    IPC: H01L31/0216 ,  H01L31/0236

    CPC classification number: H01L31/03685 ,  G02F1/0147 ,  H01L31/022433 ,  H01L31/03762 ,  H01L31/072 ,  Y02E10/545 ,  Y02E10/548

    Abstract: A thin film solar cell having adjustable or designable patterns, comprising:a transparent substrate; an upper electrode layer; a photovoltaic layer; and a lower electrode layer. Said upper electrode layer is disposed on said transparent substrate, and said upper electrode layer is a transparent electrode. Said photovoltaic layer is disposed on said upper electrode layer; and said lower electrode layer is disposed on said photovoltaic layer, and said lower electrode layer is provided with said adjustable or designable patterns, so as to achieve purpose of esthetically pleasing, sales promotion, and theft prevention.

    Abstract translation: 一种具有可调节或可设计图案的薄膜太阳能电池，包括：透明基板; 上电极层; 光伏层; 和下电极层。 所述上电极层设置在所述透明基板上，所述上电极层为透明电极。 所述光伏层设置在所述上​​电极层上; 并且所述下电极层设置在所述光电层上，并且所述下电极层设置有所述可调节或可设计的图案，以达到美观，促销和防盗的目的。

    SUPPORT STRUCTURE MADE OF PRECAST CONCRETE
    3.
    发明申请
    SUPPORT STRUCTURE MADE OF PRECAST CONCRETE 审中-公开
    预制混凝土的支撑结构

    公开(公告)号：US20120047825A1

    公开(公告)日：2012-03-01

    申请号：US13017421

    申请日：2011-01-31

    Applicant: YEE SHYI CHANG ,  CHI-JEN LIU

    Inventor： YEE SHYI CHANG ,  CHI-JEN LIU

    IPC: E02D27/42 ,  E04D13/18

    CPC classification number: E02D27/01 ,  E04H5/08 ,  F24S25/10 ,  F24S25/617 ,  H02S20/22 ,  Y02B10/12 ,  Y02B10/20 ,  Y02E10/47

    Abstract: A support structure made of precast concrete and a building thereof, comprising a building top portion and at least a support structure. Said building top portion includes at least a thin film solar cell and a steel frame lateral beam structure supporting said thin film solar cell. Each said support structure includes a support column and a base, said support column supports said building top portion, and said base is at bottom of said support column. Said support column and said base form integrally into one piece by means of concrete material.

    Abstract translation: 由预制混凝土及其建筑物制成的支撑结构，包括建筑物顶部部分和至少一个支撑结构。 所述建筑顶部至少包括薄膜太阳能电池和支撑所述薄膜太阳能电池的钢框架横梁结构。 每个所述支撑结构包括支撑柱和基座，所述支撑柱支撑所述建筑顶部，并且所述底座位于所述支撑柱的底部。 所述支撑柱和所述底座通过混凝土材料一体地成形为一体。

    TRANSPARENT CANOPY HAVING THIN FILM SOLAR CELLS AND CAPABLE OF INSECTS PREVENTION
    4.
    发明申请
    TRANSPARENT CANOPY HAVING THIN FILM SOLAR CELLS AND CAPABLE OF INSECTS PREVENTION 审中-公开
    具有薄膜太阳能细胞的透明食物和预防能力

    公开(公告)号：US20120047824A1

    公开(公告)日：2012-03-01

    申请号：US13017371

    申请日：2011-01-31

    Applicant: YEE SHYI CHANG ,  CHANG CHI MEI ,  CHI-JEN LIU

    Inventor： YEE SHYI CHANG ,  CHANG CHI MEI ,  CHI-JEN LIU

    IPC: E04D13/18 ,  F21V33/00

    CPC classification number: A01G13/0206 ,  A01G9/243 ,  F21S9/03 ,  F21Y2115/10 ,  H01L31/02167 ,  Y02A40/266 ,  Y02B10/12 ,  Y02E10/50 ,  Y02P60/124

    Abstract: A transparent building, comprising a building body and at least a thin film solar cell. Said building body has a top portion, and said thin film solar cell is arranged on said top portion of said building body. Said thin film solar cell absorbs green light, blue light, and ultraviolet light in sunlight, and converts them into electrical energy, and also allows red light, orange light, yellow light, and infrared light to pass through said thin film solar cell and reach inside of said building body. A transparent canopy having said thin film solar cell is also disclosed.

    Abstract translation: 一种透明建筑物，包括建筑物体和至少一个薄膜太阳能电池。 所述建筑体具有顶部，并且所述薄膜太阳能电池被布置在所述建筑物体的所述顶部。 所述薄膜太阳能电池在阳光下吸收绿光，蓝光和紫外线，并将其转换成电能，并且还允许红光，橙光，黄光和红外光通过所述薄膜太阳能电池并达到 在建筑物内部。 还公开了具有所述薄膜太阳能电池的透明罩。

    GROUP III-V SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    GROUP III-V SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    III-V族太阳能电池及其制造方法

    公开(公告)号：US20110308607A1

    公开(公告)日：2011-12-22

    申请号：US13017221

    申请日：2011-01-31

    Applicant: YEE-SHYI CHANG ,  Chi-Jen Liu

    Inventor： YEE-SHYI CHANG ,  Chi-Jen Liu

    IPC: H01L31/0376 ,  H01L31/0352

    CPC classification number: H01L31/076 ,  H01L31/0304 ,  H01L31/03762 ,  H01L31/202 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

    Abstract: A Group III-V solar cell and a manufacturing method thereof, wherein, three amorphous silicon layers are formed on a substrate, which includes a first type amorphous silicon layer, an intrinsic amorphous silicon layer, and a second type amorphous silicon layer. The lattice characteristics of amorphous silicon layer are utilized, and a Group III-V polycrystalline semiconductor layer is formed on said amorphous silicon layer, such that amorphous silicon and Group III-V material are able to perform photoelectric conversion simultaneously in raising photoelectric conversion efficiency of said Group III-V solar cell effectively by means of a direct energy gap of said Group III-V material.

    Abstract translation: III-V族太阳能电池及其制造方法，其特征在于，在包括第一非晶硅层，本征非晶硅层和第二非晶硅层的基板上形成三个非晶硅层。 利用非晶硅层的晶格特性，在所述非晶硅层上形成III-V族多晶半导体层，使得非晶硅和III-V族材料能够同时进行光电转换，提高光电转换效率 所述III-V族太阳能电池通过所述III-V族材料的直接能隙有效地进行。

    SOLAR CELL STRUCTURE OF GROUP III-V SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SOLAR CELL STRUCTURE OF GROUP III-V SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    III-V族半导体的太阳能电池结构及其制造方法

    公开(公告)号：US20110303283A1

    公开(公告)日：2011-12-15

    申请号：US13017547

    申请日：2011-01-31

    Applicant: YEE SHYI CHANG ,  CHI-JEN LIU

    Inventor： YEE SHYI CHANG ,  CHI-JEN LIU

    IPC: H01L31/0256 ,  H01L31/18

    CPC classification number: H01L31/0392 ,  H01L31/068 ,  H01L31/075 ,  H01L31/1852 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    Abstract: A solar cell structure of Group III-V semiconductor and method of manufacturing the same, comprising: a transparent substrate, an amorphous silicon layer, and at least a Group III-V polycrystalline semiconductor layer. Wherein, said amorphous silicon layer is formed on said transparent substrate through Plasma Enhanced Chemical Vapor Deposition (PECVD), and said Group III-V polycrystalline semiconductor layer is formed on said amorphous silicon layer sequentially by means of Metal-Organic Chemical Vapor Deposition (MOCVD). In said solar cell structure mentioned above, said transparent substrate replaces a conventional Group III-V substrate, hereby reducing its cost significantly, increasing surface area of said solar cell structure, hence increasing its light absorption area, and raising its photoelectric conversion efficiency.

    Abstract translation: III-V族半导体的太阳能电池结构及其制造方法，包括：透明基板，非晶硅层和至少III-V族多晶半导体层。 其中，通过等离子体增强化学气相沉积（PECVD）在所述透明衬底上形成所述非晶硅层，并且通过金属有机化学气相沉积（MOCVD）在所述非晶硅层上依次形成所述III-V族多晶半导体层 ）。 在上述所述太阳能电池结构中，所述透明基板代替了传统的III-V族基板，从而显着降低了其成本，增加了所述太阳能电池结构的表面积，从而增加了其光吸收面积，提高了其光电转换效率。

    GATE HEIGHT LOSS IMPROVEMENT FOR A TRANSISTOR
    8.
    发明申请
    GATE HEIGHT LOSS IMPROVEMENT FOR A TRANSISTOR 有权
    栅极高度损失改善晶体管

    公开(公告)号：US20130164930A1

    公开(公告)日：2013-06-27

    申请号：US13335771

    申请日：2011-12-22

    Applicant: Che-Hao Tu ,  Chi-Jen Liu ,  Tzu-Chung Wang ,  Weilun Hong ,  Ying-Tsung Chen ,  Liang-Guang Chen

    Inventor： Che-Hao Tu ,  Chi-Jen Liu ,  Tzu-Chung Wang ,  Weilun Hong ,  Ying-Tsung Chen ,  Liang-Guang Chen

    IPC: H01L21/28

    CPC classification number: H01L29/66545 ,  H01L21/28088 ,  H01L21/31053 ,  H01L21/823456 ,  H01L21/823481 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659

    Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a first gate structure over an iso region of a substrate and a second gate structure over a dense region of the substrate. The dense region has a greater pattern density than the iso region. The first and second gate structures each have a respective hard mask disposed thereon. The method includes removing the hard masks from the first and second gate structures. The removal of the hard mask from the second gate structure causes an opening to be formed in the second gate structure. The method includes performing a deposition process followed by a first polishing process to form a sacrificial component in the opening. The method includes performing a second polishing process to remove the sacrificial component and portions of the first and second gate structures.

    Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在衬底的iso区域上形成第一栅极结构，并且在衬底的致密区域上形成第二栅极结构。 密集区域具有比iso区域更大的图案密度。 第一和第二栅极结构各自具有设置在其上的相应的硬掩模。 该方法包括从第一和第二栅极结构去除硬掩模。 从第二栅极结构去除硬掩模导致在第二栅极结构中形成开口。 该方法包括执行沉积过程，随后进行第一抛光工艺以在开口中形成牺牲部件。 该方法包括执行第二抛光工艺以去除牺牲部件以及第一和第二栅极结构的部分。

    INTELLIGENT THIN FILM SOLAR CELL HAVING TEMPERATURE DEPENDENT INFRARED LIGHT TRANSMITTANCE CAPABILITY
    9.
    发明申请
    INTELLIGENT THIN FILM SOLAR CELL HAVING TEMPERATURE DEPENDENT INFRARED LIGHT TRANSMITTANCE CAPABILITY 审中-公开
    智能薄膜太阳能电池具有温度依赖红外光发射能力

    公开(公告)号：US20120048379A1

    公开(公告)日：2012-03-01

    申请号：US13017515

    申请日：2011-01-31

    Applicant: YEE SHYI CHANG ,  CHANG CHI MEI ,  CHI-JEN LIU

    Inventor： YEE SHYI CHANG ,  CHANG CHI MEI ,  CHI-JEN LIU

    IPC: H01L31/02

    CPC classification number: H01L31/022466 ,  H01L31/02167 ,  H01L31/056 ,  Y02E10/52

    Abstract: An intelligent thin film solar cell having temperature dependent infrared light transmittance capability, comprising: a transparent substrate, an upper electrode layer, a photovoltaic layer, a lower electrode layer, a temperature dependent optical layer, and an ultra-thin conductive layer. Said upper electrode layer is disposed on said transparent substrate, said photovoltaic layer is disposed on said upper electrode layer, and said lower electrode layer is disposed on said photovoltaic layer. Said temperature dependent optical layer is disposed between said photovoltaic layer and said lower electrode layer, and its transmittance to infrared light is dependent on variations of temperature. When temperature of said temperature dependent optical layer increases to a specific range, transmittance of said temperature dependent optical layer to said infrared light is reduced. Said ultra-thin conductive layer is disposed on said lower electrode layer, and reflects said infrared light transmitted through said temperature dependent optical layer.

    Abstract translation: 一种具有温度依赖性红外光透射能力的智能薄膜太阳能电池，包括：透明基板，上电极层，光电层，下电极层，温度依赖性光学层和超薄导电层。 所述上电极层设置在所述透明基板上，所述光电层设置在所述上​​电极层上，所述下电极层设置在所述光电层上。 所述温度依赖光学层设置在所述光电转换层和所述下电极层之间，其对红外光的透射率取决于温度的变化。 当所述温度依赖性光学层的温度升高到特定范围时，所述温度依赖光学层对所述红外光的透射率降低。 所述超薄导电层设置在所述下电极层上，并且反射透过所述温度依赖光学层的所述红外光。

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