Multiple-patterning overlay decoupling method
    3.
    发明授权
    Multiple-patterning overlay decoupling method 有权
    多图案叠加去耦方法

    公开(公告)号:US09134627B2

    公开(公告)日:2015-09-15

    申请号:US13328264

    申请日:2011-12-16

    IPC分类号: H01L21/66 G03F7/20 H01L23/544

    摘要: A method for fabricating a semiconductor device is disclosed. An exemplary method includes forming a first structure in a first layer by a first exposure and determining placement information of the first structure. The method further includes forming a second structure in a second layer overlying the first layer by a second exposure and determining placement information of the second structure. The method further includes forming a third structure including first and second substructures in a third layer overlying the second layer by a third exposure. Forming the third structure includes independently aligning the first substructure to the first structure and independently aligning the second substructure to the second structure.

    摘要翻译: 公开了一种制造半导体器件的方法。 一种示例性方法包括通过第一曝光在第一层中形成第一结构并确定第一结构的放置信息。 该方法还包括通过第二曝光在覆盖第一层的第二层中形成第二结构,并确定第二结构的放置信息。 该方法还包括在第三层中形成第三结构,该第三结构包括通过第三次曝光覆盖第二层的第三层中的第一和第二子结构。 形成第三结构包括将第一子结构独立地对准第一结构并且将第二子结构独立地对准到第二结构。

    Anti-fuse structure and fabrication
    5.
    发明授权
    Anti-fuse structure and fabrication 有权
    防熔丝结构和制造

    公开(公告)号:US09105637B2

    公开(公告)日:2015-08-11

    申请号:US13475542

    申请日:2012-05-18

    摘要: A method including a first interconnect level including a first electrode embedded in a first dielectric layer, a top surface of the first electrode is substantially flush with a top surface of the first dielectric layer, a second interconnect level including a via embedded in a second dielectric layer above the first dielectric layer, a third dielectric layer in direct contact with and separating the first dielectric layer and the second dielectric layer, an entire top surface of the first electrode is in direct physical contact with a bottom surface of the third dielectric layer, and an interface between the first dielectric layer and the third dielectric layer extending from the top surface of the first electrode to the via, the interface including a length less than a minimum width of the via, a bottom surface of the via is in direct physical contact with the first dielectric layer.

    摘要翻译: 一种包括第一互连电平的方法,包括嵌入在第一电介质层中的第一电极,第一电极的顶表面基本上与第一电介质层的顶表面平齐,第二互连电平包括嵌入第二电介质中的通孔 在与第一介电层和第二介电层直接接触和分离的第三电介质层上,第一电极的整个顶表面与第三电介质层的底表面直接物理接触, 以及从第一电极的顶表面延伸到通孔的第一介电层和第三电介质层之间的界面,所述界面包括小于通孔的最小宽度的长度,通孔的底表面是直接物理的 与第一电介质层接触。

    FIXED-FOCUS LENS
    6.
    发明申请
    FIXED-FOCUS LENS 有权
    固定镜片

    公开(公告)号:US20150062720A1

    公开(公告)日:2015-03-05

    申请号:US14133642

    申请日:2013-12-19

    IPC分类号: G02B13/04 G02B13/18

    摘要: A fixed-focus lens including a first lens group and a second lens group is provided. The first lens group having a negative refractive power includes a first lens, a second lens and a third lens arranged in sequence from an object side to an image side, in which refractive powers of the first, second and third lenses are negative, negative and positive in sequence. The second lens group having a positive refractive power is located between the first lens group and the image side, and the second lens group includes a fourth lens, a fifth lens and a sixth lens arranged in sequence from the object side to the image side, in which refractive powers of the fourth, fifth and sixth lenses are positive, negative and positive in sequence. The first, second, third, fourth, fifth and sixth lenses are separated from each other.

    摘要翻译: 提供了包括第一透镜组和第二透镜组的固定焦点透镜。 具有负屈光力的第一透镜组包括第一透镜,第二透镜和从物体侧到像侧依次排列的第三透镜,其中第一透镜,第二透镜和第三透镜的折射力为负的,负的为 顺序为正。 具有正折光力的第二透镜组位于第一透镜组和图像侧之间,并且第二透镜组包括从物体侧到像侧依次布置的第四透镜,第五透镜和第六透镜, 其中第四,第五和第六透镜的屈光力依次为正,负和正。 第一,第二,第三,第四,第五和第六透镜彼此分离。

    Holographic reticle and patterning method
    8.
    发明授权
    Holographic reticle and patterning method 有权
    全息掩模版和图案化方法

    公开(公告)号:US08758963B2

    公开(公告)日:2014-06-24

    申请号:US13554209

    申请日:2012-07-20

    IPC分类号: G03F1/00 G03F7/00

    摘要: A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures or else used in a multi-surface imaging composition. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.

    摘要翻译: 全息图掩模版和图案化目标的方法。 要传输到目标的图像的布局图案被转换成图像的全息图。 制造包括全息图的全息标线。 然后使用全息图标线来对目标进行图案化。 可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。 这些三维图案可以被填充以形成三维结构,或者用于多表面成像组合物中。 图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像(TSI)半导体器件的顶部光致抗蚀剂层。 然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。 下部光致抗蚀剂层用于对该器件的材料层进行图案化。

    Structure and method of reducing electromigration cracking and extrusion effects in semiconductor devices
    9.
    发明授权
    Structure and method of reducing electromigration cracking and extrusion effects in semiconductor devices 失效
    减少半导体器件中电迁移破裂和挤出效应的结构和方法

    公开(公告)号:US08716101B2

    公开(公告)日:2014-05-06

    申请号:US13530999

    申请日:2012-06-22

    IPC分类号: H01L21/76

    摘要: A structure for reducing electromigration cracking and extrusion effects in semiconductor devices includes a first metal line formed in a first dielectric layer; a cap layer formed over the first metal line and first dielectric layer; a second dielectric layer formed over the cap layer; and a void formed in the second dielectric layer, stopping on the cap layer, wherein the void is located in a manner so as to isolate structural damage due to electromigration effects of the first metal line, the effects including one or more of extrusions of metal material from the first metal line and cracks from delamination of the cap layer with respect to the first dielectric layer.

    摘要翻译: 用于减少半导体器件中的电迁移破裂和挤出效应的结构包括形成在第一介电层中的第一金属线; 形成在第一金属线和第一介电层上的盖层; 形成在所述盖层上的第二电介质层; 以及形成在所述第二介电层中的空隙,停止在所述盖层上,其中所述空隙以这样的方式定位,以便隔离由于所述第一金属线的电迁移效应引起的结构损坏,所述效果包括一种或多种金属挤压 来自第一金属线的材料和帽层相对于第一介电层分层的裂纹。

    Projection lens and projection apparatus
    10.
    发明授权
    Projection lens and projection apparatus 有权
    投影镜头和投影仪

    公开(公告)号:US08675292B2

    公开(公告)日:2014-03-18

    申请号:US13273210

    申请日:2011-10-13

    IPC分类号: G02B13/16

    摘要: A projection lens for projecting an image beam is provided. The image beam is converted by a light valve from an illumination beam irradiating the light valve. The projection lens includes a first lens group, a second lens group, and a third lens group. The first lens group is disposed on a transmission path of the image beam, and has a first optical axis. The second lens group is disposed on both a transmission path of the illumination beam and the transmission path of the image beam, and between the light valve and the first lens group. The second lens group has a second optical axis. The second optical axis is inclined with respect to the first optical axis. The third lens group is disposed on the transmission path of the image beam, and between the first lens group and the second lens group. A projection apparatus is also provided.

    摘要翻译: 提供了用于投影图像束的投影透镜。 图像光束通过光阀从照射光阀的照明光束转换。 投影透镜包括第一透镜组,第二透镜组和第三透镜组。 第一透镜组设置在图像束的传输路径上,并且具有第一光轴。 第二透镜组设置在照明光束的传输路径和图像束的传输路径之间,以及光阀和第一透镜组之间。 第二透镜组具有第二光轴。 第二光轴相对于第一光轴倾斜。 第三透镜组设置在图像束的传输路径上,并且位于第一透镜组和第二透镜组之间。 还提供投影设备。