摘要:
An omnidirectional optical reflector structure (41, 52, 61) is made by forming a plurality of holes in a solid body (11) so as to result in a face-centered cubic lattice. Conventiently, the desired structure can be made by three successive steps of microfabrication, e.g., in the presence of a mask layer (12). Preferred reflector structures can be used, e.g., as external mirrors as filters, and as cavity materials of communications lasers with improved signal-to-noise ratio.
摘要:
In a laser pulse generator, short pulses adjustable in the range between about 0.1 and 0.5 nanoseconds are produced by improved spectral filtering of the output of a gas breakdown switch. The spectral filter in one embodiment is a hot, linearly absorbing gas cell that passes both sidebands of the radiation producing the gas breakdown in the switch and that linearly absorbs the center frequency. A second embodiment uses a tandem dual-slit monochromator as the spectral filter in order to pass both sidebands. The hot gas cell is simpler, cheaper and characterized by a higher rejection ratio than any other alternative to date. It yields very clean pulses with a steeper leading edge than prior techniques. The leading edge is highly reproducible, as needed for nuclear fusion work. The advantage over prior pulsed CO.sub.2 lasers for nuclear fusion work is substantial, since those prior lasers have not achieved pulse durations less than one nanosecond.
摘要:
This disclosure provides systems, methods, and apparatus related to probes for multidimensional nanospectroscopic imaging. In one aspect, a method includes providing a transparent tip comprising a dielectric material. A four-sided pyramidal-shaped structure is formed at an apex of the transparent tip using a focused ion beam. Metal layers are deposited over two opposing sides of the four-sided pyramidal-shaped structure.
摘要:
The spiral sheet antenna allows a small efficient antenna structure that is much smaller than the electromagnetic wavelength. It achieves the small size by introducing a high effective dielectric constant through geometry rather than through a special high dielectric constant material. It typically includes a rectangular cylinder-like shape, with a seam. The edges of the seam can overlap to make a high capacitance, or they can make a high capacitance by simply having the edges of the seam very close to each other. The high capacitance serves the same role as a high dielectric constant material in a conventional compact antenna.
摘要:
A two dimensional periodic pattern of capacitive and inductive elements defined in the surface of a metal sheet are provided by a plurality of conductive patches each connected to a conductive back plane sheet between which an insulating dielectric is disposed. The elements acts to suppress surface currents in the surface defined by them. In particular, the array forms a ground plane mesh for use in combination with an antenna. The performance of a ground plane mesh is characterized by a frequency band within which no substantial surface currents are able to propagate along the ground plane mesh. Use of such a ground plane in aircraft or other metallic vehicles thereby prevents radiation from the antenna from propagating along the metallic skin of the aircraft or vehicle. This eliminates surface currents between the antenna and the ground plane thereby reducing power loss and unwanted coupling between neighboring antennae. The surface also reflects electromagnetic waves without the phase shift that occurs on a normal metal surface. This allows antennas to be constructed that were previously impractical.
摘要:
A method of making a semiconductor laser from a gallium arsenide substrate of a first conductivity type by depositing a first layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As of first conductivity type on the substrate and a thin second layer of semiconductor material for quantum confinement having the composition In.sub.y Ga.sub.1-y As on the first layer. This layer experiences sufficient strain in the semiconductor structure so as to minimize the threshold current density. The device is completed by depositing a third layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As and of second conductivity type on the second layer, and depositing a fourth layer of semiconductor material having the composition GaAs and of second conductivity type on the third layer.
摘要翻译:一种通过在衬底上沉积具有第一导电类型的组成Al x Ga 1-x As的第一半导体材料层和用于量子限制的薄的第二半导体材料层来制造具有第一导电类型的砷化镓衬底的半导体激光器的方法, 组成InyGa1-yAs在第一层。 该层在半导体结构中经历足够的应变,以便使阈值电流密度最小化。 通过在第二层上沉积具有组成Al x Ga 1-x As和第二导电类型的第三层半导体材料并在第三层上沉积具有组成GaAs和第二导电类型的第四层半导体材料来完成该器件。
摘要:
An ultra-high efficiency inverted solar cell structure is disclosed. At the rear of the cell is a high performance heterocontact made of SIPOS (a mixture of micro-crystalline silicon and silicon dioxide). At the edge of the cell, the opposite contact is of conventional heavily doped silicon. The edge contact is kept in the dark at least one diffusion length or one-third mm laterally displaced away from both the active illuminated region and from the active heterocontact.
摘要:
A hybrid solar system including a hybrid solar collector using non-imaging optics and photovoltaic components and a heat transfer and storage system in thermal communication with the hybrid solar collector, the heat transfer and storage system using particle laden gas as thermal media to simultaneously generate and store electricity and high temperature dispatchable heat.
摘要:
A method for removing epitaxial films from a single crystal substrate upon which it is grown comprising (a) providing a thin release layer (.ltoreq.1000A) between the film to be grown and the substrate; (b) growing the epitaxial film(s); (c) applying a polymeric support layer which is under tension over the film; and (d) selectively etching the release layer, the tension in the support layer causing the edges of the film to curve upwardly as the release layer is etched away.
摘要:
The present invention is a method for producing an optically enhanced thin film photovoltaic device.The method includes the steps of producing an active layer of semiconductor material wherein the surface of at least one side of the active layer is textured such that the surface includes randomly spaced, densely packed microstructures of predetermined dimensions of the order of the wavelength of visible light in the semiconductor material and attaching a reflecting surface directly to one side of the semiconductor material and making an ohmic contact to the material.