METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND MASK
    10.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND MASK 审中-公开
    制造半导体器件和掩模的方法

    公开(公告)号:US20110059606A1

    公开(公告)日:2011-03-10

    申请号:US12876763

    申请日:2010-09-07

    申请人: Fumihiro BEKKU

    发明人: Fumihiro BEKKU

    IPC分类号: H01L21/475 G03F1/00

    摘要: A photosensitive resin film is formed on a protective insulating film. Next, a plurality of bump cores is formed on the protective insulating film along a first straight line by exposing and developing the photosensitive resin film. Next, a plurality of bumps, and a plurality of interconnects that connects each of the plurality of bumps to any of the electrode pads are formed by selectively forming conductive films on a plurality of bump cores, a plurality of electrode pads, and the protective insulating film. In the step of forming a plurality of bump cores, a region bordering on the interconnect on the lateral faces of the bump core is formed to have a gentler slope than that of a region intersecting the first straight line, by exposing the photosensitive resin film only one time using a multi-gradation mask.

    摘要翻译: 感光性树脂膜形成在保护绝缘膜上。 接下来,通过曝光和显影感光树脂膜,沿着第一直线在保护绝缘膜上形成多个凸起芯。 接下来,通过在多个凸点芯,多个电极焊盘和保护绝缘体上选择性地形成导电膜来形成将多个凸点连接到任何电极焊盘的多个凸块和多个互连件 电影。 在形成多个凸起芯的步骤中,通过仅曝光感光性树脂膜,形成与凸点芯的侧面上的互连区域相邻的区域,其具有比与第一直线相交的区域更平缓的斜率 一次使用多等级面具。