摘要:
A semiconductor device includes a protective insulating film, an opening formed in the protective insulating film, an electrode pad located within the opening, a bump formed on the protective insulating film, and an interconnect. The bump includes a bump core and a conductive film. The bump core includes an insulating resin layer and a conductive resin layer located on the insulating resin layer. The conductive film is formed on at least the upper surface of the bump core. The interconnect connects the conductive film of the bump and the electrode pad.
摘要:
A plurality of projections, respectively given later as cores of a plurality of external connection terminals, are formed first by selectively forming a curable resin layer over a protective insulating film; flat portions are then formed respectively on the top surfaces of the plurality of projections, by pressing a molding jig having a flat opposing surface onto the top surfaces of the plurality of projections, before the projections are cured; the plurality of projections are cured; and the plurality of external connection terminals, and the plurality of interconnects are formed, by selectively forming an electro-conductive film over the plurality of projections, the protective insulating film, and the plurality of electrode pads.
摘要:
A method for manufacturing a semiconductor device includes forming an electrode pad in a surface layer of an insulating layer; disposing a conductive particle, of which at least a portion of the surface is coated with a thermoplastic resin, over the electrode pad; and fixing the conductive particle over the electrode pad using the resin, by heating the resin to soften the resin, and then cooling and solidifying the resin after the conductive particle and the electrode pad are electrically connected to each other, to form the conductive particle as an external connection terminal.
摘要:
A layer to be etched is first formed in a substrate. Then, a mask pattern is formed over the layer to be etched. Then, the layer to be etched is wet-etched using the mask pattern as a mask. In the procedure of performing wet etching, the substrate is dipped into an etching bath with the mask pattern downward.
摘要:
A semiconductor device includes a protective insulating film, an opening formed in the protective insulating film, an electrode pad located within the opening, a bump formed on the protective insulating film, and an interconnect. The bump includes a bump core and a conductive film. The bump core includes an insulating resin layer and a conductive resin layer located on the insulating resin layer. The conductive film is formed on at least the upper surface of the bump core. The interconnect connects the conductive film of the bump and the electrode pad.
摘要:
A layer to be etched is first formed in a substrate. Then, a mask pattern is formed over the layer to be etched. Then, the layer to be etched is wet-etched using the mask pattern as a mask. In the procedure of performing wet etching, the substrate is dipped into an etching bath with the mask pattern downward.
摘要:
A plurality of projections, respectively given later as cores of a plurality of external connection terminals, are formed first by selectively forming a curable resin layer over a protective insulating film; flat portions are then formed respectively on the top surfaces of the plurality of projections, by pressing a molding jig having a flat opposing surface onto the top surfaces of the plurality of projections, before the projections are cured; the plurality of projections are cured; and the plurality of external connection terminals, and the plurality of interconnects are formed, by selectively forming an electro-conductive film over the plurality of projections, the protective insulating film, and the plurality of electrode pads.
摘要:
A method for manufacturing a semiconductor device includes forming an electrode pad in a surface layer of an insulating layer; disposing a conductive particle, of which at least a portion of the surface is coated with a thermoplastic resin, over the electrode pad; and fixing the conductive particle over the electrode pad using the resin, by heating the resin to soften the resin, and then cooling and solidifying the resin after the conductive particle and the electrode pad are electrically connected to each other, to form the conductive particle as an external connection terminal.
摘要:
A semiconductor device includes an electrode pad and a protective insulating film having an opening to expose the electrode pad. The semiconductor device further includes a bump (resin core bump) that includes a bump core (resin core) formed on the protective insulating film and a conductive layer formed on the bump core. The semiconductor device further includes an interconnect that connects the conductive layer and the electrode pad. The bump core is in the form of a laminate of plural resin layers (for example, first and second resin layers) that have different elastic modulus.
摘要:
A photosensitive resin film is formed on a protective insulating film. Next, a plurality of bump cores is formed on the protective insulating film along a first straight line by exposing and developing the photosensitive resin film. Next, a plurality of bumps, and a plurality of interconnects that connects each of the plurality of bumps to any of the electrode pads are formed by selectively forming conductive films on a plurality of bump cores, a plurality of electrode pads, and the protective insulating film. In the step of forming a plurality of bump cores, a region bordering on the interconnect on the lateral faces of the bump core is formed to have a gentler slope than that of a region intersecting the first straight line, by exposing the photosensitive resin film only one time using a multi-gradation mask.