摘要:
A method for fabricating an integrated circuit structure and the resulting integrated circuit structure are provided. The method includes forming a low-k dielectric layer; form an opening in the low-k dielectric layer; forming a barrier layer covering a bottom and sidewalls of the low-k dielectric layer; performing a treatment to the barrier layer in an environment comprising a treatment gas; and filling the opening with a conductive material, wherein the conductive material is on the barrier layer.
摘要:
A signal transmission device is provided. The signal transmission device comprises a linked unit, a data connector, a sliding block, a link and a lock block. The linked unit includes a first shaft, a second shaft, a third shaft, a first elastomer and a second elastomer. The data connector rotates and expands according to the first shaft and the first elastomer. During the retraction of the data connector, the data connector pushes the sliding block. Then the sliding block moves against the lock block so that the lock block rotates according to the second shaft. The lock block rotates to lock and secure the data connector by the lock piece, while a cam of the link moves to a secure location along an incline plane of a track of the sliding block.
摘要:
A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle θ less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.
摘要:
Semiconductor devices having an oblique metal recess for receiving metal during metallization processes are described. In one example, a semiconductor device includes a dielectric layer formed over a conductive pad disposed in a substrate. The conductive pad is etched to include an oblique recess, which interfaces with a metal deposited during a metallization process. Related methods for forming such metal contacts and interconnections for the semiconductor device are also described.
摘要:
Within a microelectronic fabrication and a method for fabricating the microelectronic fabrication a barrier layer is formed over a substrate. Within the method and the microelectronic fabrication the barrier layer is formed of a refractory metal nitride barrier material having within its thickness a gradient in nitrogen concentration. The barrier layer has low resistivity and improved electromigration performance.
摘要:
A device includes a substrate, a semiconductor fin over the substrate, and a gate dielectric layer on a top surface and sidewalls of the semiconductor fin. A gate electrode is spaced apart from the semiconductor fin by the gate dielectric layer. The gate electrode includes a top portion over and aligned to the semiconductor fin, and a sidewall portion on a sidewall portion of the dielectric layer. The top portion of the gate electrode has a first work function, and the sidewall portion of the gate electrode has a second work function different from the first work function.
摘要:
A method for fabricating an integrated circuit structure and the resulting integrated circuit structure are provided. The method includes forming a low-k dielectric layer; form an opening in the low-k dielectric layer; forming a barrier layer covering a bottom and sidewalls of the low-k dielectric layer; performing a treatment to the barrier layer in an environment comprising a treatment gas; and filling the opening with a conductive material, wherein the conductive material is on the barrier layer.
摘要:
A signal transmission device is provided. The signal transmission device comprises a linked unit, a data connector, a sliding block, a link and a lock block. The linked unit includes a first shaft, a second shaft, a third shaft, a first elastomer and a second elastomer. The data connector rotates and expands according to the first shaft and the first elastomer. During the retraction of the data connector, the data connector pushes the sliding block. Then the sliding block moves against the lock block so that the lock block rotates according to the second shaft. The lock block rotates to lock and secure the data connector by the lock piece, while a cam of the link moves to a secure location along an incline plane of a track of the sliding block.
摘要:
A durable golf tee construction to prevent the loss of or damage to golf tees, allowing golf players to play many rounds of golf using only one golf tee. The first tee of the duo-tee construction contains a wire connected to the base top and the separable ball seat, through a center hole in the middle ring portion, so that the whole structure becomes more durable and thus environmental friendly than other prior art disclosure's teaching.
摘要:
A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle θ less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.