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公开(公告)号:US20160372433A1
公开(公告)日:2016-12-22
申请号:US15168240
申请日:2016-05-30
申请人: Hongbin SHI , Hojeong MOON , Kang Joon LEE
发明人: Hongbin SHI , Hojeong MOON , Kang Joon LEE
IPC分类号: H01L23/00 , H01L21/56 , H01L25/00 , H01L25/065 , H01L25/10
CPC分类号: H01L25/50 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L25/105 , H01L2224/11849 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13139 , H01L2224/1357 , H01L2224/16227 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2225/1023 , H01L2225/1058 , H01L2225/1082 , H01L2924/1431 , H01L2924/1434 , H01L2924/1436 , H01L2924/1438 , H01L2924/15311 , H01L2924/15331 , H01L2924/18161 , H01L2924/3511 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要: Provided is a method of fabricating a semiconductor package. The method include providing a lower package with an inner solder ball, providing a conductive material on the inner solder ball to form an outer solder ball enclosing the inner solder ball, providing an upper package with an upper solder ball, on the lower package, performing a first process at a first temperature to join the upper solder ball to the outer solder ball, and performing a second process at a second temperature to unite the upper, inner, and outer solder balls into a connection terminal.
摘要翻译: 提供一种制造半导体封装件的方法。 该方法包括提供具有内部焊球的下部封装,在内部焊球上提供导电材料以形成封装内部焊球的外部焊球,在下部封装上提供具有上部焊球的上部封装,执行 在第一温度下将第一温度连接到外部焊球的第一工艺,以及在第二温度下进行第二工序以将上,内和外焊球团聚到连接端子中。
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公开(公告)号:US09786644B2
公开(公告)日:2017-10-10
申请号:US15168240
申请日:2016-05-30
申请人: Hongbin Shi , Hojeong Moon , Kang Joon Lee
发明人: Hongbin Shi , Hojeong Moon , Kang Joon Lee
IPC分类号: H01L23/00 , H01L25/00 , H01L25/10 , H01L23/31 , H01L23/498
CPC分类号: H01L25/50 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L25/105 , H01L2224/11849 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13139 , H01L2224/1357 , H01L2224/16227 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2225/1023 , H01L2225/1058 , H01L2225/1082 , H01L2924/1431 , H01L2924/1434 , H01L2924/1436 , H01L2924/1438 , H01L2924/15311 , H01L2924/15331 , H01L2924/18161 , H01L2924/3511 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要: Provided is a method of fabricating a semiconductor package. The method include providing a lower package with an inner solder ball, providing a conductive material on the inner solder ball to form an outer solder ball enclosing the inner solder ball, providing an upper package with an upper solder ball, on the lower package, performing a first process at a first temperature to join the upper solder ball to the outer solder ball, and performing a second process at a second temperature to unite the upper, inner, and outer solder balls into a connection terminal.
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公开(公告)号:US20170162555A1
公开(公告)日:2017-06-08
申请号:US15346089
申请日:2016-11-08
申请人: Junglae Jo , Yeo-Hoon Yoon , Hojeong Moon , Taeeun Kim
发明人: Junglae Jo , Yeo-Hoon Yoon , Hojeong Moon , Taeeun Kim
IPC分类号: H01L25/18 , B23K35/26 , H01L25/065 , C22C13/00 , H01L23/498 , H01L23/00
CPC分类号: H01L25/18 , B23K35/262 , C22C13/00 , H01L21/4853 , H01L23/49811 , H01L23/49838 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/32 , H01L24/48 , H01L24/81 , H01L25/0657 , H01L25/105 , H01L2224/0401 , H01L2224/04042 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16227 , H01L2224/16503 , H01L2224/16507 , H01L2224/32225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/73265 , H01L2224/75283 , H01L2224/8121 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/8149 , H01L2224/8181 , H01L2224/81815 , H01L2225/0651 , H01L2225/06517 , H01L2225/0652 , H01L2225/06572 , H01L2225/1023 , H01L2225/1058 , H01L2924/014 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/18161 , H01L2924/3512 , H01L2924/00014 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2924/01028 , H01L2924/01083 , H01L2924/00
摘要: Solder compositions for semiconductor fabrication are provided that include silver (Ag) of 3.0 wt. % to 4.0 wt. %, copper (Cu) of 0.75 wt. % to 1.0 wt. %, nickel (Ni) of 0.08 wt. % to 1.0 wt. %, and tin (Sn) of 94 wt. % to 96.17 wt. %, or that include bismuth (Bi) of 0.3 wt. % to 2.0 wt. % in place of a portion of the tin (Sn) in the solder composition; and, semiconductor packages are also provided that use the solder compositions for bonding one or more components of the semiconductor packages to each other.
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