公开(公告)号：US09786644B2

公开(公告)日：2017-10-10

申请号：US15168240

申请日：2016-05-30

申请人： Hongbin Shi ,  Hojeong Moon ,  Kang Joon Lee

发明人： Hongbin Shi ,  Hojeong Moon ,  Kang Joon Lee

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L25/10 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L25/50 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L25/105 ,  H01L2224/11849 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/1357 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1082 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1438 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a method of fabricating a semiconductor package. The method include providing a lower package with an inner solder ball, providing a conductive material on the inner solder ball to form an outer solder ball enclosing the inner solder ball, providing an upper package with an upper solder ball, on the lower package, performing a first process at a first temperature to join the upper solder ball to the outer solder ball, and performing a second process at a second temperature to unite the upper, inner, and outer solder balls into a connection terminal.

公开(公告)号：US20170162555A1

公开(公告)日：2017-06-08

申请号：US15346089

申请日：2016-11-08

申请人： Junglae Jo ,  Yeo-Hoon Yoon ,  Hojeong Moon ,  Taeeun Kim

发明人： Junglae Jo ,  Yeo-Hoon Yoon ,  Hojeong Moon ,  Taeeun Kim

IPC分类号： H01L25/18 ,  B23K35/26 ,  H01L25/065 ,  C22C13/00 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L25/18 ,  B23K35/262 ,  C22C13/00 ,  H01L21/4853 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16227 ,  H01L2224/16503 ,  H01L2224/16507 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/75283 ,  H01L2224/8121 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8149 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/014 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01083 ,  H01L2924/00

摘要： Solder compositions for semiconductor fabrication are provided that include silver (Ag) of 3.0 wt. % to 4.0 wt. %, copper (Cu) of 0.75 wt. % to 1.0 wt. %, nickel (Ni) of 0.08 wt. % to 1.0 wt. %, and tin (Sn) of 94 wt. % to 96.17 wt. %, or that include bismuth (Bi) of 0.3 wt. % to 2.0 wt. % in place of a portion of the tin (Sn) in the solder composition; and, semiconductor packages are also provided that use the solder compositions for bonding one or more components of the semiconductor packages to each other.