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1.发明授权公开(公告)号：US08758981B2
公开(公告)日：2014-06-24
申请号：US13540111
申请日：2012-07-02
申请人： Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Chang-Soo Woo , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
发明人： Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Chang-Soo Woo , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
CPC分类号： G03F7/0752 , G03F7/09 , G03F7/11
摘要： A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: {(SiO1.5—Y—SiO1.5)x(SiO2)y(XSiO1.5)z}(OH)e(OR1)f. [Chemical Formula 1]
摘要翻译： 光致抗蚀剂底层组合物包括溶剂和由化学式1表示的聚硅氧烷树脂：{（SiO 1.5-Y-SiO 1.5）x（SiO 2）y（XSiO 1.5）z}（OH）e（OR 1）f 。 [化学式1]
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2.发明申请Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same 有权抗蚀剂底层组合物和使用其制造半导体集成电路器件的方法公开(公告)号：US20100167203A1
公开(公告)日：2010-07-01
申请号：US12654737
申请日：2009-12-30
申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
发明人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
CPC分类号： G03F7/0752 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/50 , C08G77/52 , C08G77/70 , C08K5/0008 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , G03F7/0757 , G03F7/09 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36
摘要： A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
摘要翻译： 抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述组合物包括溶剂和有机硅烷聚合物，所述有机硅烷聚合物是至少一种由化学式1和2表示的第一化合物的缩聚产物和至少一种 化学式3〜5表示的第二化合物。
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3.发明授权Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same 有权抗蚀剂底层组合物和使用其制造半导体集成电路器件的方法公开(公告)号：US09291899B2
公开(公告)日：2016-03-22
申请号：US12654737
申请日：2009-12-30
申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
发明人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
IPC分类号： G03F7/075 , G03F7/09 , G03F7/11 , G03F7/30 , G03F7/36 , C08G77/50 , C08G77/52 , C08K5/00 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/00
CPC分类号： G03F7/0752 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/50 , C08G77/52 , C08G77/70 , C08K5/0008 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , G03F7/0757 , G03F7/09 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36
摘要： A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
摘要翻译： 抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述组合物包括溶剂和有机硅烷聚合物，所述有机硅烷聚合物是至少一种由化学式1和2表示的第一化合物的缩聚产物和至少一种 化学式3〜5表示的第二化合物。
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4.发明授权Resist underlayer composition and process of producing integrated circuit devices using the same 有权抗蚀底层组合物和使用其制造集成电路器件的工艺公开(公告)号：US09140986B2
公开(公告)日：2015-09-22
申请号：US13539760
申请日：2012-07-02
申请人： Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Sang-Ran Koh , Hui-Chan Yun , Yong-Jin Chung , Jong-Seob Kim
发明人： Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Sang-Ran Koh , Hui-Chan Yun , Yong-Jin Chung , Jong-Seob Kim
IPC分类号： C08G77/08 , G03F7/075 , G03F7/11 , H01L21/02 , H01L21/033 , C08L83/04 , C08G77/16 , C08G77/18 , C08L83/06
CPC分类号： G03F7/0752 , C08G77/16 , C08G77/18 , C08L83/04 , C08L83/06 , G03F7/11 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332
摘要： A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1,
摘要翻译： 抗蚀剂底层组合物包括溶剂和有机硅烷缩聚产物，所述有机硅烷缩聚产物包含约40至约80mol％的由以下化学式1表示的结构单元，
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5.发明申请RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME 审中-公开耐蚀组合物及使用其制造集成电路装置的方法公开(公告)号：US20100167212A1
公开(公告)日：2010-07-01
申请号：US12654742
申请日：2009-12-30
申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
发明人： Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
IPC分类号： G03F7/20 , C08L61/00 , C08L83/00 , C08K5/3432 , C08G77/00
CPC分类号： G03F7/11 , C08K5/54 , G03F7/0752
摘要： A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the resist underlayer composition including a solvent and an organosilane-based polymer, the organosilane-based polymer being a polymerization product of at least one first compound represented Chemical Formulae 1 to 3 and at least one second compound represented by Chemical Formulae 4 and 5.
摘要翻译： 抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述抗蚀剂底层组合物包含溶剂和有机硅烷系聚合物，所述有机硅烷类聚合物为至少一种化学式1〜3的第一化合物的聚合产物 和由化学式4和5表示的至少一种第二化合物。
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6.发明授权Resist underlayer composition and process of producing integrated circuit devices using the same 有权抗蚀底层组合物和使用其制造集成电路器件的工艺公开(公告)号：US08962747B2
公开(公告)日：2015-02-24
申请号：US13539971
申请日：2012-07-02
申请人： Mi-Young Kim , Woo-Jin Lee , Kwen-Woo Han , Han-Song Lee , Sang-Kyun Kim , Jong-Seob Kim
发明人： Mi-Young Kim , Woo-Jin Lee , Kwen-Woo Han , Han-Song Lee , Sang-Kyun Kim , Jong-Seob Kim
IPC分类号： C08L83/00 , H01L21/033 , G03F7/075 , G03F7/09 , H01L21/02
CPC分类号： H01L21/0332 , C08G77/80 , C09D183/04 , G03F7/0752 , G03F7/091 , H01L21/02126 , H01L21/02216 , H01L21/02282
摘要： A resist underlayer composition includes a solvent, and an organosilane condensation polymerization product of: a compound represented by the following Chemical Formula 1, a compound represented by the following Chemical Formula 2, and a compound represented by the following Chemical Formula 3, [R1O]3Si—X [Chemical Formula 1] [R2O]3Si—R3 [Chemical Formula 2] [R4O]3Si—Si[OR5]3. [Chemical Formula 3]
摘要翻译： 抗蚀剂底层组合物包括溶剂和由以下化学式1表示的化合物，由以下化学式2表示的化合物和由以下化学式3表示的化合物的有机硅烷缩聚产物[R1O] 3Si-X [化学式1] [R2O] 3Si-R3 [化学式2] [R4O] 3Si-Si [OR5] 3。 [化学式3]
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7.发明授权Resin composition for transparent encapsulation material and electronic device formed using the same 有权用于透明封装材料的树脂组合物和使用其形成的电子器件公开(公告)号：US08455605B2
公开(公告)日：2013-06-04
申请号：US13535673
申请日：2012-06-28
申请人： Sang-Ran Koh , June-Ho Shin , Hyun-Jung Ahn , Sung-Hwan Cha , Young-Eun Choi , Doo-Young Jung , Sang-Kyun Kim , Jong-Seob Kim
发明人： Sang-Ran Koh , June-Ho Shin , Hyun-Jung Ahn , Sung-Hwan Cha , Young-Eun Choi , Doo-Young Jung , Sang-Kyun Kim , Jong-Seob Kim
IPC分类号： C08G77/60
摘要： A resin composition for a transparent encapsulation material, the resin composition including a polysiloxane obtained by copolymerization of a first silicon compound represented by the following Chemical Formula 1 and a second silicon compound including a compound represented by the following Chemical Formula 2,
摘要翻译： 一种透明包封材料用树脂组合物，该树脂组合物含有通过由下述化学式1表示的第一硅化合物的共聚合得到的聚硅氧烷和包含由下述化学式2表示的化合物的第二硅化合物，
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8.发明授权Filler for filling a gap and method for manufacturing semiconductor capacitor using the same 有权用于填充间隙的填料和使用其制造半导体电容器的方法公开(公告)号：US08058711B2
公开(公告)日：2011-11-15
申请号：US12956549
申请日：2010-11-30
申请人： Sang-Hak Lim , Hui-Chan Yun , Dong-Il Han , Taek-Soo Kwak , Jin-Hee Bae , Jung-Kang Oh , Sang-Kyun Kim , Jong-Seob Kim
发明人： Sang-Hak Lim , Hui-Chan Yun , Dong-Il Han , Taek-Soo Kwak , Jin-Hee Bae , Jung-Kang Oh , Sang-Kyun Kim , Jong-Seob Kim
IPC分类号： H01L23/58 , H01L21/469 , H01L21/20 , G11B5/706
CPC分类号： H01L28/40 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/32115 , H01L21/3212 , Y10S525/94
摘要： A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3: The third moiety is on a terminal end of the hydrogenated polysiloxazane, and an amount of the third moiety is about 15 to about 35% based on a total amount of Si—H bonds in the hydrogenated polysiloxazane.
摘要翻译： 用于填充间隙的填料包括氧含量为约0.2至约3重量％的氢化聚硅氧氮烷。 氢化聚硅氧氮烷的化学结构包括由以下相应的化学式1-3表示的第一，第二和第三部分：第三部分在氢化聚硅氧氮烷的末端，第三部分的量为约15〜 约35％，基于氢化聚硅氧氮烷中Si-H键的总量。
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9.发明申请FILLER FOR FILLING A GAP AND METHOD FOR MANUFACTURING SEMICONDUCTOR CAPACITOR USING THE SAME 有权填充间隙的填料和使用其制造半导体电容器的方法公开(公告)号：US20110129981A1
公开(公告)日：2011-06-02
申请号：US12956549
申请日：2010-11-30
申请人： Sang-Hak LIM , Hui-Chan Yun , Dong-Il Han , Taek-Soo Kwak , Jin-Hee Bae , Jung-Kang Oh , Sang-Kyun Kim , Jong-Seob Kim
发明人： Sang-Hak LIM , Hui-Chan Yun , Dong-Il Han , Taek-Soo Kwak , Jin-Hee Bae , Jung-Kang Oh , Sang-Kyun Kim , Jong-Seob Kim
CPC分类号： H01L28/40 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/32115 , H01L21/3212 , Y10S525/94
摘要： A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3: The third moiety is on a terminal end of the hydrogenated polysiloxazane, and an amount of the third moiety is about 15 to about 35% based on a total amount of Si—H bonds in the hydrogenated polysiloxazane
摘要翻译： 用于填充间隙的填料包括氧含量为约0.2至约3重量％的氢化聚硅氧氮烷。 氢化聚硅氧氮烷的化学结构包括由以下各化学式1-3表示的第一，第二和第三部分：第三部分在氢化聚硅氧氮烷的末端，第三部分的量为约15至 约35％，基于氢化聚硅氧氮烷中Si-H键的总量
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10.发明授权Aromatic ring-containing polymer, polymer mixture, antireflective hardmask composition, and associated methods 有权含芳环的聚合物，聚合物混合物，抗反射硬掩模组合物及相关方法公开(公告)号：US08420289B2
公开(公告)日：2013-04-16
申请号：US12588023
申请日：2009-10-01
申请人： Min Soo Kim , Dong Seon Uh , Chang Il Oh , Kyong Ho Yoon , Kyung Hee Hyung , Jin Kuk Lee , Jong-Seob Kim , Hwan Sung Cheon , Irina Nam , Nataliya Tokareva
发明人： Min Soo Kim , Dong Seon Uh , Chang Il Oh , Kyong Ho Yoon , Kyung Hee Hyung , Jin Kuk Lee , Jong-Seob Kim , Hwan Sung Cheon , Irina Nam , Nataliya Tokareva
CPC分类号： G03F7/091
摘要： An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.
摘要翻译： 含芳环的聚合物，聚合物混合物，抗反射硬掩模组合物和用于在基材上图案化材料的方法，所述含芳族环的聚合物包括至少一种由式1,2所示的含芳族环的聚合物或 3。
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