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    METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE AND NEGATIVE PHOTORESIST COMPOSITION USED THEREIN
    1.
    发明申请
    METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE AND NEGATIVE PHOTORESIST COMPOSITION USED THEREIN 有权
    制造薄膜晶体管基板的方法及其使用的负极光电组合物

    公开(公告)号：US20100203449A1

    公开(公告)日：2010-08-12

    申请号：US12685545

    申请日：2010-01-11

    申请人： Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

    发明人： Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： H01L27/1288 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/40 ,  H01L27/1214

    摘要： A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:

    摘要翻译： 提供了制造其中使用的薄膜晶体管基板和负型光致抗蚀剂组合物的方法，其可以降低图案劣化。 制造薄膜晶体管基板的方法包括在基板上形成由导电材料构成的导电膜，在导电膜上形成由负性光致抗蚀剂组合物构成的蚀刻图案，并使用该导电膜蚀刻导电膜形成导电图案 蚀刻图案作为蚀刻掩模，其中负性光致抗蚀剂组合物包含10-50重量份的包含可溶于碱显影液的羟基的酚醛清漆树脂，0.5-10重量份由 按照下式（1），将0.5-10重量份由下式（2）表示的第二光酸反应产物，1-20重量份的交联剂和10-90重量份的溶剂 ：

    RESIN COMPOSITION FOR ORGANIC INSULATING LAYER, METHOD OF MANUFACTURING RESIN COMPOSITION, AND DISPLAY PANEL INCLUDING RESIN COMPOSITION
    2.
    发明申请
    RESIN COMPOSITION FOR ORGANIC INSULATING LAYER, METHOD OF MANUFACTURING RESIN COMPOSITION, AND DISPLAY PANEL INCLUDING RESIN COMPOSITION 有权
    有机绝缘层用树脂组合物，树脂组合物的制造方法以及包含树脂组合物的显示面板

    公开(公告)号：US20070184293A1

    公开(公告)日：2007-08-09

    申请号：US11670700

    申请日：2007-02-02

    申请人： Dong-Ki LEE ,  Byung-Uk KIM ,  Hyoc-Min YOUN

    发明人： Dong-Ki LEE ,  Byung-Uk KIM ,  Hyoc-Min YOUN

    IPC分类号： B32B27/30 ,  C08F24/00 ,  C08F36/22

    CPC分类号： C08F220/06 ,  C08F212/08 ,  C08F220/18 ,  C08F220/28 ,  C08F220/32 ,  C08F220/40 ,  G02F1/136227 ,  H01L27/3244 ,  Y10T428/31855

    摘要： Disclosed herein is a resin composition for an organic insulating layer, a method of manufacturing the same, and a display panel including an insulating layer formed using the resin composition. The resin composition for an organic insulating layer is produced by polymerizing about 5 to about 35 wt % of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture of the unsaturated carboxylic acid and the unsaturated carboxylic acid anhydride, about 5 to about 40 wt % of a styrene compound, about 5 to about 40 wt % of an epoxy compound, about 0.1 to about 10 wt % of an isobornyl compound, and about 20 to about 40 wt % of a dicyclopentadiene compound, based on the total weight of unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, styrene compound, isobornyl compound, and dicyclopentadiene compound.

    摘要翻译： 本发明公开了一种有机绝缘层用树脂组合物及其制造方法以及使用该树脂组合物形成的绝缘层的显示面板。 用于有机绝缘层的树脂组合物通过将约5至约35重量％的不饱和羧酸，不饱和羧酸酐或不饱和羧酸和不饱和羧酸酐的混合物聚合为约5至约 40重量％的苯乙烯化合物，约5至约40重量％的环氧化合物，约0.1至约10重量％的异冰片基化合物和约20至约40重量％的二环戊二烯化合物，基于总重量 的不饱和羧酸，不饱和羧酸酐，苯乙烯化合物，异冰片基化合物和二环戊二烯化合物。

    Photoresist composition, method of patterning thin film using the same, and method of manufacturing liquid crystal display panel using the same
    4.
    发明授权
    Photoresist composition, method of patterning thin film using the same, and method of manufacturing liquid crystal display panel using the same 有权
    光刻胶组合物，使用其的薄膜构图方法，以及使用其制造液晶显示面板的方法

    公开(公告)号：US07713677B2

    公开(公告)日：2010-05-11

    申请号：US11562714

    申请日：2006-11-22

    申请人： Hi Kuk Lee ,  Byung Uk Kim ,  Hyoc Min Youn ,  Joo Pyo Yun ,  Woo Seok Jeon

    发明人： Hi Kuk Lee ,  Byung Uk Kim ,  Hyoc Min Youn ,  Joo Pyo Yun ,  Woo Seok Jeon

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/118

    摘要： A photoresist composition capable of forming a high resolution pattern without an additional heating process includes an alkali-soluble phenol polymer in an amount of 10 to 70 parts by weight, including at least one unit of Formula 1, a photo-acid generator in an amount of 0.5 to 10 parts by weight, a dissolution inhibitor in an amount of 5 to 50 parts by weight, including at least one unit of Formula 2, and a solvent in an amount of 10 to 90 parts by weight, wherein the amounts of the foregoing components is based on a total of 100 parts by weight of alkali-soluble phenol polymer, photo-acid generator, dissolution inhibitor, and solvent, and wherein Formulas 1 and 2 have the structures: wherein R is a methyl group, wherein R1, R2 and R3 are the same or different and are hydrogen or t-butyl vinyl ether protective groups.

    摘要翻译： 能够在没有附加加热方法的情况下形成高分辨率图案的光致抗蚀剂组合物包括10至70重量份的碱溶性苯酚聚合物，包括至少一个式1的单元，量的光酸产生剂 为0.5〜10重量份，5〜50重量份的溶解抑制剂，包含至少1个单元的式2，溶剂的量为10〜90重量份，其中， 前述组分基于总共100重量份的碱溶性酚聚合物，光酸发生剂，溶解抑制剂和溶剂，其中式1和式2具有以下结构：其中R是甲基，其中R1， R2和R3相同或不同，为氢或叔丁基乙烯基醚保护基。

    Method of fabricating thin film transistor substrate and negative photoresist composition used therein
    5.
    发明授权
    Method of fabricating thin film transistor substrate and negative photoresist composition used therein 有权
    制造薄膜晶体管基板及其中使用的负型光致抗蚀剂组合物的方法

    公开(公告)号：US08257905B2

    公开(公告)日：2012-09-04

    申请号：US12685545

    申请日：2010-01-11

    申请人： Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

    发明人： Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： H01L27/1288 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/40 ,  H01L27/1214

    摘要： A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:

    摘要翻译： 提供了制造其中使用的薄膜晶体管基板和负型光致抗蚀剂组合物的方法，其可以降低图案劣化。 制造薄膜晶体管基板的方法包括在基板上形成由导电材料构成的导电膜，在导电膜上形成由负性光致抗蚀剂组合物构成的蚀刻图案，并使用该导电膜蚀刻导电膜形成导电图案 蚀刻图案作为蚀刻掩模，其中负性光致抗蚀剂组合物包含10-50重量份的包含可溶于碱显影液的羟基的酚醛清漆树脂，0.5-10重量份由 按照下式（1），将0.5-10重量份由下式（2）表示的第二光酸反应产物，1-20重量份的交联剂和10-90重量份的溶剂 ：

    PHOTORESIST COMPOSITION, METHOD OF PATTERNING THIN FILM USING THE SAME, AND METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY PANEL USING THE SAME
    7.
    发明申请
    PHOTORESIST COMPOSITION, METHOD OF PATTERNING THIN FILM USING THE SAME, AND METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY PANEL USING THE SAME 有权
    光电组合物，使用该薄膜的薄膜的方法以及使用其制造液晶显示面板的方法

    公开(公告)号：US20070190454A1

    公开(公告)日：2007-08-16

    申请号：US11562714

    申请日：2006-11-22

    申请人： Hi Kuk LEE ,  Byung Uk KIM ,  Hyoc Min YOUN ,  Joo Pyo YUN ,  Woo Seok JEON

    发明人： Hi Kuk LEE ,  Byung Uk KIM ,  Hyoc Min YOUN ,  Joo Pyo YUN ,  Woo Seok JEON

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/118

    摘要： A photoresist composition capable of forming a high resolution pattern without an additional heating process includes an alkali-soluble phenol polymer in an amount of 10 to 70 parts by weight, including at least one unit of Formula 1, a photo-acid generator in an amount of 0.5 to 10 parts by weight, a dissolution inhibitor in an amount of 5 to 50 parts by weight, including at least one unit of Formula 2, and a solvent in an amount of 10 to 90 parts by weight, wherein the amounts of the foregoing components is based on a total of 100 parts by weight of alkali-soluble phenol polymer, photo-acid generator, dissolution inhibitor, and solvent, and wherein Formulas 1 and 2 have the structures: wherein R is a methyl group, wherein R1, R2 and R3 are the same or different and are hydrogen or t-butyl vinyl ether protective groups.

    摘要翻译： 能够在没有附加加热方法的情况下形成高分辨率图案的光致抗蚀剂组合物包括10至70重量份的碱溶性苯酚聚合物，包括至少一个式1的单元，量的光酸产生剂 为0.5〜10重量份，5〜50重量份的溶解抑制剂，包含至少1个单元的式2，溶剂的量为10〜90重量份，其中， 前述组分基于总共100重量份的碱溶性酚聚合物，光酸发生剂，溶解抑制剂和溶剂，其中式1和式2具有以下结构：其中R是甲基，其中R“ R 1，R 2，R 3和R 3相同或不同，为氢或叔丁基乙烯基醚保护基。