公开(公告)号：US06938638B2

公开(公告)日：2005-09-06

申请号：US10026566

申请日：2001-12-27

申请人： Hiroshi Kubota ,  Rempei Nakata ,  Naruhiko Kaji ,  Itsuko Sakai ,  Takashi Yoda

发明人： Hiroshi Kubota ,  Rempei Nakata ,  Naruhiko Kaji ,  Itsuko Sakai ,  Takashi Yoda

IPC分类号： G05D7/03 ,  B08B5/00 ,  B08B9/027 ,  F17D1/04 ,  H01L21/00

CPC分类号： G05D7/03 ,  Y10S438/905 ,  Y10S438/906 ,  Y10T137/0379 ,  Y10T137/0396 ,  Y10T137/0419 ,  Y10T137/4245 ,  Y10T137/4259 ,  Y10T137/6606 ,  Y10T137/85954 ,  Y10T137/86083 ,  Y10T137/86139

摘要： A gas-circulating processing apparatus which comprises a processing chamber, a gas feeding piping, a gas supply piping, a first exhaust mechanism discharging a gas from the processing chamber, a second exhaust mechanism discharging a portion of a gas discharged from the first exhaust mechanism, a back pressure adjusting mechanism interposed between the first exhaust mechanism and the second exhaust mechanism to adjust a back pressure of the first exhaust mechanism, and a gas circulating piping which is configured to combine another portion of the gas that has been discharged from the first exhaust mechanism with a processing gas supplied from the gas supply piping, wherein the gas feeding piping has a larger inner diameter than that of the gas supply, or the processing gas is introduced into the first exhaust mechanism, or a first heater is provided to heat at least part of the circulating route.

摘要翻译： 一种气体循环处理装置，包括处理室，供气管道，气体供给管道，从处理室排出气体的第一排气机构，排出从第一排气机构排出的气体的一部分的第二排气机构 设置在所述第一排气机构和所述第二排气机构之间的背压调节机构，以调节所述第一排气机构的背压;以及气体循环管道，其配置为将从所述第一排气机构排出的气体的另一部分 排气机构，其具有从气体供给配管供给的处理气体，其中，所述气体供给配管的内径比所述气体供给更大，或者所述处理气体被引入到所述第一排气机构，或者设置第一加热器以加热 至少部分循环路线。

公开(公告)号：US06566261B2

公开(公告)日：2003-05-20

申请号：US09946601

申请日：2001-09-06

申请人： Hiroshi Ikegami ,  Rempei Nakata ,  Takashi Yoda ,  Nobuo Hayasaka ,  Yoshimi Hisatsune

发明人： Hiroshi Ikegami ,  Rempei Nakata ,  Takashi Yoda ,  Nobuo Hayasaka ,  Yoshimi Hisatsune

IPC分类号： H01L2144

CPC分类号： H01L23/53238 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/3122 ,  H01L21/76838 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10S438/959 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/00014

摘要： There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

公开(公告)号：US06828684B2

公开(公告)日：2004-12-07

申请号：US10392967

申请日：2003-03-21

申请人： Hiroshi Ikegami ,  Rempei Nakata ,  Takashi Yoda ,  Nobuo Hayasaka ,  Yoshimi Hisatsune

发明人： Hiroshi Ikegami ,  Rempei Nakata ,  Takashi Yoda ,  Nobuo Hayasaka ,  Yoshimi Hisatsune

IPC分类号： H01L2348

CPC分类号： H01L23/53238 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/3122 ,  H01L21/76838 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10S438/959 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/00014

摘要： There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

摘要翻译： 提供一种半导体器件，其包括半导体衬底和在半导体衬底之上的导电层，其中导电层包含铜，导电层的表面区域包含CH键和CC键中的至少一个，并且总量C 形成CH键的原子和在表面区域中形成CC键的C原子在表面区域中的元素的总量为30原子％以上。

公开(公告)号：US20120070676A1

公开(公告)日：2012-03-22

申请号：US13322250

申请日：2010-05-25

申请人： Ryo Niimi ,  Takashi Yoda ,  Yume Morita

发明人： Ryo Niimi ,  Takashi Yoda ,  Yume Morita

IPC分类号： B32B27/08 ,  C08K13/02 ,  C08K3/22 ,  C09D183/04 ,  B82Y30/00

CPC分类号： B32B27/28 ,  C08L83/04 ,  C08L83/14 ,  Y10T428/31663

摘要： An organosiloxane resin composition which greatly improves the weatherability, hot water resistance and durability against environmental variations and a high-temperature environment of a substrate, imparts excellent abrasion resistance and has high optical transparency and a laminate.The organosiloxane resin composition comprises (A) colloidal silica (component A), (B) a hydrolyzed and condensed product of an alkoxysilane (component B), (C) a hydrolyzed and condensed product of an alkoxysilane having high hydrophobic nature (component C) and (D) a metal oxide (component D).

摘要翻译： 大大提高耐候性，耐热水性和耐环境变化耐久性以及基板的高温环境的有机硅氧烷树脂组合物赋予了优异的耐磨性，并且具有高的光学透明性和层压体。 有机硅氧烷树脂组合物包含（A）胶态二氧化硅（A成分），（B）烷氧基硅烷（B成分）的水解缩合物，（C）疏水性高的烷氧基硅烷的水解缩合物（C成分） 和（D）金属氧化物（D成分）。

公开(公告)号：US06595656B2

公开(公告)日：2003-07-22

申请号：US09976689

申请日：2001-10-12

申请人： Takashi Yoda

发明人： Takashi Yoda

IPC分类号： F21L400

CPC分类号： B60Q3/44 ,  F21K9/20 ,  F21V21/30 ,  F21W2106/00 ,  F21Y2115/10

摘要： A cabin lamp used in, for instance, an airplane having an LED module that is attached to a lamp housing and connected via a connector to a feeder element provided in the lamp housing. The LED module has a printed circuit board and a plurality of reflectors that are installed in a frame-shaped bezel detachably attached to a front end portion of the lamp housing. The printed circuit board is mounted with a plurality of light emitting diodes (LEDs), and the reflectors surround each of the LEDs so as to reflect the light from the LEDs substantially forward.

摘要翻译： 例如，用于例如具有LED模块的飞机的舱灯，所述LED模块附接到灯壳体并且经由连接器连接到设置在灯壳体中的馈电元件。 LED模块具有印刷电路板和多个反射器，其安装在可拆卸地附接到灯壳体的前端部的框状挡板中。 印刷电路板安装有多个发光二极管（LED），并且反射器围绕每个LED，以便将来自LED的光基本向前反射。

公开(公告)号：US06661088B1

公开(公告)日：2003-12-09

申请号：US09669724

申请日：2000-09-26

申请人： Takashi Yoda ,  Hirokazu Ezawa

发明人： Takashi Yoda ,  Hirokazu Ezawa

IPC分类号： H01L23053

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L27/228 ,  H01L2224/16225 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15311 ,  H05K1/141

摘要： A semiconductor integrated circuit device has a semiconductor chip, interposer, and substrate. The semiconductor chip has a plurality of first pads arranged at first pitches on a surface. The interposer has a first surface and a second surface. On the first surface, a plurality of second pads are arranged at the first pitches. On said second surface, a plurality of third pads arranged at second pitches which are larger than the first pitches. The second pads and the first pads are connected to each other by joining the first surface of the interposer to the surface of the semiconductor chip so as to face each other. The substrate has a plurality of fourth pads arranged at the second pitches on a surface. The fourth pads and the third pads are connected to each other by joining the surface of the substrate to the second surface of the interposer so as to face each other.

摘要翻译： 半导体集成电路器件具有半导体芯片，插入件和衬底。 半导体芯片具有在表面上以第一间距布置的多个第一焊盘。 插入器具有第一表面和第二表面。 在第一表面上，以第一间距布置多个第二垫。 在所述第二表面上，以比第一间距大的第二间距布置的多个第三衬垫。 第二焊盘和第一焊盘通过将插入件的第一表面与半导体芯片的表面接合以彼此面对而彼此连接。 衬底具有在表面上以第二间距布置的多个第四衬垫。 第四焊盘和第三焊盘通过将基板的表面与插入件的第二表面接合以彼此面对而彼此连接。

公开(公告)号：US06432257B1

公开(公告)日：2002-08-13

申请号：US09018909

申请日：1998-02-05

申请人： Hiroshi Nagasaka ,  Momoko Kakutani ,  Kunio Tateishi ,  Naoaki Ogure ,  Takashi Yoda

发明人： Hiroshi Nagasaka ,  Momoko Kakutani ,  Kunio Tateishi ,  Naoaki Ogure ,  Takashi Yoda

IPC分类号： B24B500

CPC分类号： B24B53/017 ,  B24B37/04 ,  B24B53/12 ,  B24D18/00

摘要： A improved dresser for dressing a polishing surface, easily be manufactured such that an object to be polished is not scratched when the object is polished. The dresser can dress the polishing surface of a polishing apparatus to effect surface correction and to correct a time-lapse change due to a polishing operation, a number of spired projections are formed on a surface of a metallic substrate and a wear-resistant hard film is formed on at least a portion of the surface of the metallic substrate on which the projections are formed.

摘要翻译： 可以容易地制造用于修整抛光表面的改进的修整器，使得抛光对象在被抛光时不被划伤。 梳妆台可以打磨抛光装置的抛光表面以进行表面校正并且校正由于抛光操作引起的延时变化，在金属基底和耐磨硬膜的表面上形成多个喷射突起 形成在其上形成有突起的金属基板的表面的至少一部分上。

公开(公告)号：US06410439B1

公开(公告)日：2002-06-25

申请号：US09527528

申请日：2000-03-16

申请人： Masako Kodera ,  Takashi Yoda ,  Motosuke Miyoshi

发明人： Masako Kodera ,  Takashi Yoda ,  Motosuke Miyoshi

IPC分类号： H01L21302

CPC分类号： B24B37/013 ,  H01L21/30625 ,  H01L21/31053

摘要： In the CMP of films of semiconductor devices, pulsed measuring radiation is directed onto a surface to be polished of a rotating wafer. At this point, the pulse repetition rate of the pulsed measuring radiation is determined so that the pulse measuring radiation is directed only onto a specified portion of the surface of each semiconductor device. Thereby, reflection data can be obtained only from the specified portion of a film to be polished, allowing accurate measurements of the thickness of the specified portion of the film in the middle of polishing.

摘要翻译： 在半导体器件的CMP的CMP中，脉冲测量辐射被引导到旋转晶片抛光的表面上。 此时，脉冲测量辐射的脉冲重复率被确定为使得脉冲测量辐射仅指向每个半导体器件的表面的指定部分。 由此，只能从要被研磨的膜的指定部分获得反射数据，从而可以精确地测量抛光中间的膜的指定部分的厚度。

公开(公告)号：US20060024952A1

公开(公告)日：2006-02-02

申请号：US11136494

申请日：2005-05-25

申请人： Hiroshi Ikenoue ,  Hisashi Kaneko ,  Masaaki Hatano ,  Soichi Yamashita ,  Takashi Yoda ,  Makoto Sekine

发明人： Hiroshi Ikenoue ,  Hisashi Kaneko ,  Masaaki Hatano ,  Soichi Yamashita ,  Takashi Yoda ,  Makoto Sekine

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76862 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76873

摘要： A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic plating.

摘要翻译： 根据本发明的一个方面的制造半导体器件的方法包括在衬底上形成Cu的种子膜; 使形成在基板上的种子膜多晶化; 并通过电解电镀在多晶种子膜上形成Cu的镀膜。

公开(公告)号：US20050250423A1

公开(公告)日：2005-11-10

申请号：US11178318

申请日：2005-07-12

申请人： Kenro Nakamura ,  Naoto Miyashita ,  Takashi Yoda ,  Katsuya Okumura

发明人： Kenro Nakamura ,  Naoto Miyashita ,  Takashi Yoda ,  Katsuya Okumura

IPC分类号： B24B9/00 ,  B24B9/06 ,  B24B21/00 ,  B24B21/06 ,  H01L21/304 ,  H01L21/321 ,  B24B1/00

CPC分类号： H01L21/304 ,  B24B9/065 ,  B24B21/002 ,  B24B21/06 ,  H01L21/321 ,  Y10S134/902

摘要： In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.