摘要:
A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly including a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support, each filament including a conductor surrounded by a cylindrical insulating shell, and an RF power source configured to apply a first RF signal to at least some of the plurality of filaments, to apply a second RF signal of equal frequency to at least some of the plurality of filaments, and to modulate a phase offset between the first RF signal and the second RF signal.
摘要:
A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.
摘要:
A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly that includes a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support. Each filament including a conductor surrounded by a cylindrical insulating shell. The plurality of filaments includes a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments. An RF power source is configured to apply a first RF input signal to the first multiplicity of filaments.
摘要:
A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly including a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support. At least one bus is electrically connected to a conductor of each filament. An RF power source is configured to apply a first RF signal of a first frequency to the plurality of filaments at a first location on at least one bus, and to apply a second RF signal of different second frequency to the plurality of filaments at a different second location on the at least one bus.
摘要:
A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
摘要:
A plasma reactor includes an electrostatic chuck in the chamber for supporting the workpiece, a ceiling electrode facing the electrostatic chuck and an ESC electrode in the electrostatic chuck with an electrostatic clamping voltage supply coupled to the ESC electrode. The reactor further includes at least a first RF bias source of an LF or HF frequency coupled to the pedestal electrode, and first and second VHF power sources of different frequencies coupled to the same or to different ones of the electrodes. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber.
摘要:
A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.
摘要:
RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.
摘要:
A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.
摘要:
Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.