公开(公告)号：US20080179611A1

公开(公告)日：2008-07-31

申请号：US11899790

申请日：2007-09-07

申请人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller ,  David T. Emerson ,  John Edmond ,  Michael J. Bergmann ,  Jasper S. Cabalu ,  Jeffrey C. Britt ,  Arpan Chakraborty ,  Eric Tarsa ,  James Seruto ,  Yankun Fu

发明人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller ,  David T. Emerson ,  John Edmond ,  Michael J. Bergmann ,  Jasper S. Cabalu ,  Jeffrey C. Britt ,  Arpan Chakraborty ,  Eric Tarsa ,  James Seruto ,  Yankun Fu

IPC分类号： H01L33/00

CPC分类号： H01L33/508 ,  H01L33/0095 ,  H01L33/36 ,  H01L33/387 ,  H01L33/44 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

摘要翻译： 制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。 基座沉积在LED上，每个基座与其中一个LED电接触。 在LED上形成涂层，其中涂层埋入至少一些基座。 然后将涂层平坦化以暴露至少一些埋置的基座，同时在所述LED上留下至少一些所述涂层。 然后可以例如通过引线接合露出的基座。 本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。 还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。

公开(公告)号：US09159888B2

公开(公告)日：2015-10-13

申请号：US11899790

申请日：2007-09-07

申请人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller ,  David T. Emerson ,  John Edmond ,  Michael J. Bergmann ,  Jasper S. Cabalu ,  Jeffrey C. Britt ,  Arpan Chakraborty ,  Eric Tarsa ,  Yankun Fu

发明人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller ,  David T. Emerson ,  John Edmond ,  Michael J. Bergmann ,  Jasper S. Cabalu ,  Jeffrey C. Britt ,  Arpan Chakraborty ,  Eric Tarsa ,  James Seruto ,  Yankun Fu

IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L33/62 ,  H01L33/38 ,  H01L33/36 ,  H01L33/44 ,  H01L33/54

CPC分类号： H01L33/508 ,  H01L33/0095 ,  H01L33/36 ,  H01L33/387 ,  H01L33/44 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

摘要翻译： 制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。 基座沉积在LED上，每个基座与其中一个LED电接触。 在LED上形成涂层，其中涂层埋入至少一些基座。 然后将涂层平坦化以暴露至少一些埋置的基座，同时在所述LED上留下至少一些所述涂层。 然后可以例如通过引线接合露出的基座。 本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。 还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。

公开(公告)号：US09024349B2

公开(公告)日：2015-05-05

申请号：US11656759

申请日：2007-01-22

申请人： Ashay Chitnis ,  James Ibbetson ,  Arpan Chakraborty ,  Eric J. Tarsa ,  Bernd Keller ,  James Seruto ,  Yankun Fu

发明人： Ashay Chitnis ,  James Ibbetson ,  Arpan Chakraborty ,  Eric J. Tarsa ,  Bernd Keller ,  James Seruto ,  Yankun Fu

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/44 ,  H01L33/50 ,  H01L23/31

CPC分类号： H01L33/62 ,  H01L23/3114 ,  H01L33/38 ,  H01L33/387 ,  H01L33/44 ,  H01L33/501 ,  H01L33/507 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

公开(公告)号：US20080173884A1

公开(公告)日：2008-07-24

申请号：US11656759

申请日：2007-01-22

申请人： Ashay Chitnis ,  James Ibbetson ,  Arpan Chakraborty ,  Eric J. Tarsa ,  Bernd Keller ,  James Seruto ,  Yankun Fu

发明人： Ashay Chitnis ,  James Ibbetson ,  Arpan Chakraborty ,  Eric J. Tarsa ,  Bernd Keller ,  James Seruto ,  Yankun Fu

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L23/3114 ,  H01L33/38 ,  H01L33/387 ,  H01L33/44 ,  H01L33/501 ,  H01L33/507 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

公开(公告)号：US20100079059A1

公开(公告)日：2010-04-01

申请号：US12491654

申请日：2009-06-25

申请人： John Roberts ,  Gerald H. Negley ,  Antony P. van de Ven ,  Arpan Chakraborty ,  Bernd Keller ,  Ronan P. Le Toquin

发明人： John Roberts ,  Gerald H. Negley ,  Antony P. van de Ven ,  Arpan Chakraborty ,  Bernd Keller ,  Ronan P. Le Toquin

IPC分类号： H01J63/04

CPC分类号： F21K9/00 ,  F21S4/20 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2924/0002 ,  Y10S362/80 ,  H01L2924/00

摘要： A solid state lighting apparatus includes a plurality of light emitting diodes (LEDs) including at least a first LED and a second LED. Chromaticities of the first and second LEDs are selected so that a combined light generated by a mixture of light from the pair of LEDs has about a target chromaticity. The first LED may include a first LED chip that emits light in the blue portion of the visible spectrum and a phosphor that emits red light in response to blue light emitted by the first LED chip. The second LED emits light having a color point that is above the planckian locus of a 1931 CIE Chromaticity diagram, and in particular may have a yellow green, greenish yellow or green hue.

摘要翻译： 固态照明装置包括至少包括第一LED和第二LED的多个发光二极管（LED）。 选择第一和第二LED的色度，使得由来自该对LED的光的混合产生的组合光具​​有约目标色度。 第一LED可以包括发射可见光谱的蓝色部分中的光的第一LED芯片和响应于由第一LED芯片发射的蓝光发射红光的荧光体。 第二个LED发出具有高于1931 CIE色度图的平底轨迹的色点的光，特别是可以具有黄绿色，绿黄色或绿色。

公开(公告)号：US08998444B2

公开(公告)日：2015-04-07

申请号：US12491654

申请日：2009-06-25

申请人： John Roberts ,  Gerald H. Negley ,  Antony P. van de Ven ,  Arpan Chakraborty ,  Bernd Keller ,  Ronan P. Le Toquin

发明人： John Roberts ,  Gerald H. Negley ,  Antony P. van de Ven ,  Arpan Chakraborty ,  Bernd Keller ,  Ronan P. Le Toquin

IPC分类号： F21V9/00 ,  F21K99/00 ,  F21S4/00 ,  F21Y101/02 ,  F21Y105/00 ,  H01L25/075 ,  H01L33/50 ,  F21Y103/00

CPC分类号： F21K9/00 ,  F21S4/20 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2924/0002 ,  Y10S362/80 ,  H01L2924/00

摘要： A solid state lighting apparatus includes a plurality of light emitting diodes (LEDs) including at least a first LED and a second LED. Chromaticities of the first and second LEDs are selected so that a combined light generated by a mixture of light from the pair of LEDs has about a target chromaticity. The first LED may include a first LED chip that emits light in the blue portion of the visible spectrum and a phosphor that emits red light in response to blue light emitted by the first LED chip. The second LED emits light having a color point that is above the planckian locus of a 1931 CIE Chromaticity diagram, and in particular may have a yellow green, greenish yellow or green hue.

摘要翻译： 固态照明装置包括至少包括第一LED和第二LED的多个发光二极管（LED）。 选择第一和第二LED的色度，使得由来自该对LED的光的混合产生的组合光具​​有约目标色度。 第一LED可以包括发射可见光谱的蓝色部分中的光的第一LED芯片和响应于由第一LED芯片发射的蓝光发射红光的荧光体。 第二个LED发出具有高于1931 CIE色度图的平底轨迹的色点的光，特别是可以具有黄绿色，绿黄色或绿色。

公开(公告)号：US20080308825A1

公开(公告)日：2008-12-18

申请号：US11818818

申请日：2007-06-14

申请人： Arpan Chakraborty ,  Bernd Keller

发明人： Arpan Chakraborty ,  Bernd Keller

IPC分类号： H01L33/00 ,  B29C39/00 ,  B32B5/16

CPC分类号： H01L33/56 ,  H01L25/0753 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2933/0091 ,  Y10T428/2982 ,  H01L2924/00

摘要： A light emitting device having an encapsulant with scattering features to tailor the spatial emission pattern and color temperature uniformity of the output profile. The encapsulant is formed with materials having light scattering properties. The concentration of these light scatterers is varied spatially within the encapsulant and/or on the surface of the encapsulant. The regions having a high density of scatterers are arranged in the encapsulant to interact with light entering the encapsulant over a desired range of source emission angles. By increasing the probability that light from a particular range of emission angles will experience at least one scattering event, both the intensity and color temperature profiles of the output light beam can be tuned.

摘要翻译： 一种发光器件，其具有具有散射特征的密封剂，以调整输出分布图的空间发射图案和色温均匀性。 密封剂由具有光散射性质的材料形成。 这些光散射体的浓度在密封剂内和/或密封剂的表面上在空间上变化。 具有高密度散射体的区域被布置在密封剂中以与在源发射角的期望范围内进入密封剂的光相互作用。 通过增加来自特定发射角范围的光将经历至少一个散射事件的概率，可以调节输出光束的强度和色温分布。

公开(公告)号：US07999283B2

公开(公告)日：2011-08-16

申请号：US11818818

申请日：2007-06-14

申请人： Arpan Chakraborty ,  Bernd Keller

发明人： Arpan Chakraborty ,  Bernd Keller

IPC分类号： H01L33/00

CPC分类号： H01L33/56 ,  H01L25/0753 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2933/0091 ,  Y10T428/2982 ,  H01L2924/00

摘要： A light emitting device having an encapsulant with scattering features to tailor the spatial emission pattern and color temperature uniformity of the output profile. The encapsulant is formed with materials having light scattering properties. The concentration of these light scatterers is varied spatially within the encapsulant and/or on the surface of the encapsulant. The regions having a high density of scatterers are arranged in the encapsulant to interact with light entering the encapsulant over a desired range of source emission angles. By increasing the probability that light from a particular range of emission angles will experience at least one scattering event, both the intensity and color temperature profiles of the output light beam can be tuned.

摘要翻译： 一种发光器件，其具有具有散射特征的密封剂，以调整输出分布图的空间发射图案和色温均匀性。 密封剂由具有光散射性质的材料形成。 这些光散射体的浓度在密封剂内和/或密封剂的表面上在空间上变化。 具有高密度散射体的区域被布置在密封剂中以与在源发射角的期望范围内进入密封剂的光相互作用。 通过增加来自特定发射角范围的光将经历至少一个散射事件的概率，可以调节输出光束的强度和色温分布。

公开(公告)号：US20090173958A1

公开(公告)日：2009-07-09

申请号：US11969508

申请日：2008-01-04

申请人： Arpan Chakraborty ,  Bernd Keller

发明人： Arpan Chakraborty ,  Bernd Keller

IPC分类号： H01L33/00

CPC分类号： H01L33/501 ,  H01L33/502 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A light emitting device includes a light emitting die configured to emit light having a first dominant wavelength, and an index matched wavelength conversion structure configured to receive light emitted by the light emitting die. The index matched wavelength conversion structure includes wavelength converting particles having a first index of refraction embedded in a matrix material. The matrix material has a second index of refraction that may be substantially matched to the first index of refraction. The light emitting device may include a graded index layer having an index of refraction that is continuously graded from a first index of refraction in a first region of the graded index layer near the light emitting die to a second index of refraction in the graded index layer away from the light emitting die.

摘要翻译： 发光器件包括配置为发射具有第一主波长的光的发光管芯和被配置为接收由发光管芯发射的光的折射率匹配波长转换结构。 折射率匹配波长转换结构包括具有嵌入在基质材料中的第一折射率的波长转换粒子。 基质材料具有可以基本上与第一折射率匹配的第二折射率。 发光器件可以包括具有折射率的渐变折射率层，所述折射率折射率在发光管芯附近的渐变折射率层的第一区域中从折射率的第一折射率的第一折射率连续分级到渐变折射率层中的第二折射率 远离发光模具。

公开(公告)号：US08786053B2

公开(公告)日：2014-07-22

申请号：US13012674

申请日：2011-01-24

申请人： Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

发明人： Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

IPC分类号： H01L29/06 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/036

CPC分类号： H01L33/32 ,  H01L21/6835 ,  H01L21/76254 ,  H01L24/29 ,  H01L24/83 ,  H01L29/02 ,  H01L29/0692 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/50 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83193 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/00014 ,  H01L2924/00

摘要： A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

摘要翻译： 含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。 该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。 衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。