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    Emission tuning methods and devices fabricated utilizing methods
    5.
    发明授权
    Emission tuning methods and devices fabricated utilizing methods 有权
    使用方法制造的排放调节方法和装置

    公开(公告)号：US08877524B2

    公开(公告)日：2014-11-04

    申请号：US12414457

    申请日：2009-03-30

    申请人： Ashay Chitnis ,  John Edmond ,  Jeffrey Carl Britt ,  Bernd P. Keller ,  David Todd Emerson ,  Michael John Bergmann ,  Jasper S. Cabalu

    发明人： Ashay Chitnis ,  John Edmond ,  Jeffrey Carl Britt ,  Bernd P. Keller ,  David Todd Emerson ,  Michael John Bergmann ,  Jasper S. Cabalu

    IPC分类号： H01L21/66 ,  H01L33/00 ,  H01L33/50

    CPC分类号： H01L33/508 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2933/0041 ,  Y10T408/47

    摘要： A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.

    摘要翻译： 一种用于制造发光二极管（LED）芯片的方法，包括通常在晶片上提供多个LED，并用转换材料涂覆LED，使得来自LED的至少一些光通过转换材料并被转换。 来自LED芯片的光发射包括来自转换材料的光，通常与LED光结合。 测量至少一些LED芯片的发射特性，并且除去LED上的至少一些转换材料以改变LED芯片的发射特性。 本发明特别适用于在晶片上制造LED芯片，其中LED芯片具有在目标发射特性范围内的发光特性。 该目标范围可以落在CIE曲线上的发射区域内，以减少对来自晶片的LED进行合并的需要。 晶片上的LED芯片的发射特性可以通过在LED上微转换材料来调节到期望的范围。

    Flip-chip phosphor coating method and devices fabricated utilizing method
    6.
    发明申请
    Flip-chip phosphor coating method and devices fabricated utilizing method 有权
    倒装芯片荧光粉涂布方法和使用方法制造的器件

    公开(公告)号：US20090179207A1

    公开(公告)日：2009-07-16

    申请号：US12008477

    申请日：2008-01-11

    申请人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller

    发明人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/502 ,  H01L33/505 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/13 ,  H01L2933/0041 ,  H01L2933/0066

    摘要： Methods for fabricating light emitting diode (LED) chips one of which comprises flip-chip mounting a plurality of LEDs on a surface of a submount wafer and forming a coating over said LEDs. The coating comprising a conversion material at least partially covering the LEDs. The coating is planarized to the desired thickness with the coating being continuous and unobstructed on the top surface of the LEDs. The LEDs chips are then singulated from the submount wafer. An LED chip comprising a lateral geometry LED having first and second contacts, with the LED flip-chip mounted to a submount by a conductive bonding material. A phosphor loaded binder coats and at least partially covers the LED. The binder provides a substantially continuous and unobstructed coating over the LED. The phosphor within the coating absorbs and converts the wavelength of at least some of the LED light with the coating planarized to achieve the desired emission color point of the LED chip.

    摘要翻译： 制造发光二极管（LED）芯片的方法，其中之一包括倒装芯片，将多个LED安装在底座晶片的表面上并在所述LED上形成涂层。 所述涂层包含至少部分地覆盖所述LED的转化材料。 将涂层平坦化到所需的厚度，涂层在LED的顶表面上是连续的并且不受阻碍。 然后将LED芯片从底座晶片分离。 一种LED芯片，包括具有第一和第二触点的侧向几何形状LED，其中LED倒装芯片通过导电接合材料安装到基座。 荧光体负载的粘合剂涂层并且至少部分地覆盖LED。 粘合剂在LED上提供基本上连续且无障碍的涂层。 涂层内的荧光体吸收并转换至少一些LED光的波长，使涂层平坦化，以达到LED芯片的期望的发射色点。

    Flip-chip phosphor coating method and devices fabricated utilizing method
    8.
    发明授权
    Flip-chip phosphor coating method and devices fabricated utilizing method 有权
    倒装芯片荧光粉涂布方法和使用方法制造的器件

    公开(公告)号：US08878219B2

    公开(公告)日：2014-11-04

    申请号：US12008477

    申请日：2008-01-11

    申请人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller

    发明人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller

    IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L33/64 ,  H01L33/44

    CPC分类号： H01L33/44 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/502 ,  H01L33/505 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/13 ,  H01L2933/0041 ,  H01L2933/0066

    摘要： Methods for fabricating light emitting diode (LED) chips one of which comprises flip-chip mounting a plurality of LEDs on a surface of a submount wafer and forming a coating over said LEDs. The coating comprising a conversion material at least partially covering the LEDs. The coating is planarized to the desired thickness with the coating being continuous and unobstructed on the top surface of the LEDs. The LEDs chips are then singulated from the submount wafer. An LED chip comprising a lateral geometry LED having first and second contacts, with the LED flip-chip mounted to a submount by a conductive bonding material. A phosphor loaded binder coats and at least partially covers the LED. The binder provides a substantially continuous and unobstructed coating over the LED. The phosphor within the coating absorbs and converts the wavelength of at least some of the LED light with the coating planarized to achieve the desired emission color point of the LED chip.

    摘要翻译： 制造发光二极管（LED）芯片的方法，其中之一包括倒装芯片，将多个LED安装在底座晶片的表面上并在所述LED上形成涂层。 所述涂层包含至少部分地覆盖所述LED的转化材料。 将涂层平坦化到所需的厚度，涂层在LED的顶表面上是连续的并且不受阻碍。 然后将LED芯片从底座晶片分离。 一种LED芯片，包括具有第一和第二触点的侧向几何形状LED，其中LED倒装芯片通过导电接合材料安装到基座。 荧光体负载的粘合剂涂层并且至少部分地覆盖LED。 粘合剂在LED上提供基本上连续且无障碍的涂层。 涂层内的荧光体吸收并转换至少一些LED光的波长，使涂层平坦化，以达到LED芯片的期望的发射色点。

    Wire bond free wafer level LED
    10.
    发明申请
    Wire bond free wafer level LED 有权
    无接线晶圆级LED

    公开(公告)号：US20090121241A1

    公开(公告)日：2009-05-14

    申请号：US11985410

    申请日：2007-11-14

    申请人： Bernd Keller ,  Ashay Chitnis ,  Nicholas W. Medendorp, JR. ,  James Ibbetson ,  Max Batres

    发明人： Bernd Keller ,  Ashay Chitnis ,  Nicholas W. Medendorp, JR. ,  James Ibbetson ,  Max Batres

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0756 ,  H01L33/08 ,  H01L33/22 ,  H01L33/385 ,  H01L33/46 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/45099

    摘要： A wire-bond free semiconductor device with two electrodes both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers, each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source, obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.

    摘要翻译： 具有两个电极的无引线键合半导体器件，两者均可从器件的底部接近。 该器件由与相对掺杂的外延层电连接的两个电极制成，这些电极中的每一个具有具有底侧接入点的引线。 这种结构允许器件被外部电压/电流源偏置，避免了在封装级别必须形成的引线接合或其他这样的连接机构的需要。 因此，传统上在包装级别添加到设备的特征（例如，磷光体层或密封剂）可以包括在晶片级制造工艺中。 此外，底侧电极足够厚以为器件提供主要的结构支撑，从而不需要将生长衬底作为成品器件的一部分。