摘要:
A data center system includes a container to contain electronic racks of IT components operating therein, a cooling unit disposed underneath the electronic racks to receive cool liquid from a chiller unit, to exchange heat generated from the IT components, and to transmit the hot liquid carrying the exchanged heat back to the chiller unit. Each electronic rack includes a housing to house IT components arranged in a stack, a first rack aisle formed on a first side of the IT components to direct cool air received from the cooling unit upwardly, and a second rack aisle formed on a second side of the IT components to direct hot air to the cooling unit downwardly, where the host air is transformed from the cool air from the first rack aisle by flowing through an air space between the IT components.
摘要:
This invention presents a process to produce bulk quantities of nanowires of a variety of semiconductor materials. Large liquid gallium drops are used as sinks for the gas phase solute, generated in-situ facilitated by microwave plasma. To grow silicon nanowires for example, a silicon substrate covered with gallium droplets is exposed to a microwave plasma containing atomic hydrogen. A range of process parameters such as microwave power, pressure, inlet gas phase composition, were used to synthesize silicon nanowires as small as 4 nm (nanometers) in diameter and several micrometers long. As opposed to the present technology, the instant technique does not require creation of quantum sized liquid metal droplets to synthesize nanowires. In addition, it offers advantages such as lower growth temperature, better control over size and size distribution, better control over the composition and purity of the nanowires.
摘要:
A method of synthesizing metal doped carbon films by placing a substrate in a chamber with a selected amount of a metalorganic compound. An electron cyclotron resonance is applied to the chamber in order to vaporize the metalorganic compound. The resonance is applied to the chamber until a metal doped carbon film is formed. The metalorganic compound is preferably selected from the group consisting of an organic salt of ruthenium, palladium, gold or platinum.
摘要:
Methods for producing high purity fused silica (HPFS) glass having desired levels of dissolved hydrogen are provided. The methods involve measuring the level of hydrogen in the cavity of the furnace used to produce the glass and controlling the pressure within the furnace and/or gas flows to the furnace's burners so that the measured concentration has a desired value. In this way, the level of dissolved hydrogen in the glass can be controlled since, as shown in FIG. 3, there is a direct correlation between the hydrogen concentration in the cavity atmosphere and level of dissolved hydrogen in the glass.
摘要:
A mutual solvent for use in oil and gas well operations comprising 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate and/or 2,2,4-trimethyl-1,3-pentanediol diisobutyrate, a coupling solvent, and an acid stable surfactant. The coupling solvent is selected from ethylene glycol monobutyl ether; diethylene glycol monobutyl ether; propylene glycol monomethyl ether acetate; propylene glycol monomethyl ether; C1-C5 alkyl alcohol; and mixtures thereof. The invention also relates to an emulsion for use in oil and gas well operations comprising an aqueous acid or acid-salt brine solution and the mutual solvent as described above. An emulsion according to the invention is stable, non-toxic, and effectively removes asphaltenic and paraffinic hydrocarbons from drilling equipment and oil and gas wells.
摘要:
An improved catalytic process for the production of pyridine carboxylic acid amides, by catalytic hydration reaction of pyridine nitriles with solid heterogeneous catalyst wherein the process involve effective utilization and recycling of the catalytic components, and reactants.
摘要:
A reactor and method for production of nanostructures produces, for example, metal oxide nanowires or nanoparticles. The reactor includes a metal powder delivery system wherein the metal powder delivery system includes a funnel in communication with a dielectric tube; a plasma-forming gas inlet, whereby a plasma-forming gas is delivered substantially longitudinally into the dielectric tube; a sheath gas inlet, whereby a sheath gas is delivered into the dielectric tube; and a microwave energy generator coupled to the dielectric tube, whereby microwave energy is delivered into a plasma-forming gas. The method for producing nanostructures includes delivering a plasma-forming gas substantially longitudinally into a dielectric tube; delivering a sheath gas into the tube; forming a plasma from the plasma-forming gas by applying microwave energy to the plasma-forming gas; delivering a metal powder into the dielectric tube; and reacting the metal powder within the plasma to form metal oxide nanostructures.
摘要:
A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure.
摘要:
A process of synthesizing metal and metal nitride nanowires, the steps comprising of: forming a catalytic metal (such as gallium, and indium) on a substrate (such as fused silica quartz, pyrolytic boron nitride, alumina, and sapphire), heating the combination in a pressure chamber, adding gaseous reactant and/or solid metal source, applying sufficient microwave energy (or current in hot filament reactor) to activate the metal of interest (such as gold, copper, tungsten, and bismuth) and continuing the process until nanowires of the desired length are formed. The substrate may be fused silica quartz, the catalytic metal a gallium or indium metal, the gaseous reactant is nitrogen and/or hydrogen and the nanowires are tungsten nitride and/or tungsten.
摘要:
A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.