公开(公告)号：US09165872B2

公开(公告)日：2015-10-20

申请号：US14523066

申请日：2014-10-24

申请人： SFI Electronics Technology Inc.

发明人： Ching-Hohn Lien ,  Xing-Xiang Huang ,  Hsing-Tsai Huang ,  Hong-Zong Xu

IPC分类号： H01L23/495 ,  H01L23/48 ,  H01L23/52 ,  H01L23/28 ,  H01L21/44 ,  H01L21/48 ,  H01L23/00 ,  H01L25/07 ,  H01L25/00 ,  H01L23/31

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49555 ,  H01L23/49562 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/2732 ,  H01L2224/2741 ,  H01L2224/29294 ,  H01L2224/29311 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/9221 ,  H01L2224/97 ,  H01L2924/00015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12 ,  H01L2924/1203 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/48

摘要： A novel chip scale diode package due to no containing outer lead pins is miniaturized like a chip scale appearance to promote dimensional accuracy so that the diode package is so suitably produced by automation equipment to get automated mass production; the produced diode package may contain one or more diode chips to increase versatile functions more useful in applications, such as produced as a SMT diode package or an array-type SMT diode, and the present diode package due to made of no lead-containing material conforms to requirements for environmental protection.

摘要翻译： 由于不含外部引脚引脚的新颖的芯片尺寸二极管封装小型化，像芯片尺寸外观，以提高尺寸精度，使得二极管封装由自动化设备适当地生产以获得自动批量生产; 所生成的二极管封装可以包含一个或多个二极管芯片，以增加在应用中更有用的通用功能，例如作为SMT二极管封装或阵列型SMT二极管制造的，以及由于不含含铅材料制成的本二极管封装 符合环保要求。

公开(公告)号：US09691736B2

公开(公告)日：2017-06-27

申请号：US14881558

申请日：2015-10-13

申请人： SFI Electronics Technology Inc.

发明人： Ching-Hohn Lien ,  Xing-Xiang Huang ,  Hsing-Tsai Huang ,  Hong-Zong Xu ,  Yi-Wei Chen

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L21/56 ,  H01L21/78 ,  H01L23/02 ,  H01L23/15 ,  H01L23/31 ,  H01L29/861 ,  H01L23/498 ,  H01L21/48 ,  H05K1/11 ,  H05K1/14 ,  H05K3/40 ,  H01L25/065

CPC分类号： H01L24/97 ,  H01L21/4853 ,  H01L21/4867 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L21/7813 ,  H01L23/02 ,  H01L23/15 ,  H01L23/3107 ,  H01L23/49805 ,  H01L23/49833 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/96 ,  H01L25/0652 ,  H01L29/861 ,  H01L2224/06181 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/29294 ,  H01L2224/29311 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/32168 ,  H01L2224/32227 ,  H01L2224/33181 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/1203 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/15798 ,  H01L2924/181 ,  H01L2924/186 ,  H05K1/117 ,  H05K1/144 ,  H05K1/145 ,  H05K3/403 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/83

摘要： A process for producing a miniaturized SMD diode package involves using a diode chip whose bottom surface has a positive electrode and a negative electrode, using a circuit board instead of a conventional lead frame during packaging, and using Charge-Coupled Device (CCD) image registration technology to perform chip bonding; the beneficial advantages brought from the process for producing the same including to simplify producing process and reduce manufacturing cost, to improve accuracy and precision of producing the miniaturized SMD diode package due to using a circuit board instead of conventionally used lead frame, and to ensure the produced miniaturized SMD diode package possesses excellent diode characteristics without distortion or defect.

公开(公告)号：US09691735B2

公开(公告)日：2017-06-27

申请号：US14585857

申请日：2014-12-30

申请人： SFI Electronics Technology Inc.

发明人： Ching-Hohn Lien ,  Xing-Xiang Huang ,  Hsing-Tsai Huang ,  Hong-Zong Xu ,  Yi-Wei Chen

IPC分类号： H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L23/00 ,  H01L21/56 ,  H01L21/78 ,  H01L23/02 ,  H01L23/15 ,  H01L23/31 ,  H01L29/861 ,  H01L23/498 ,  H01L21/48 ,  H05K1/11 ,  H05K1/14 ,  H05K3/40 ,  H01L25/065

CPC分类号： H01L24/97 ,  H01L21/4853 ,  H01L21/4867 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L21/7813 ,  H01L23/02 ,  H01L23/15 ,  H01L23/3107 ,  H01L23/49805 ,  H01L23/49833 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/96 ,  H01L25/0652 ,  H01L29/861 ,  H01L2224/06181 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/29294 ,  H01L2224/29311 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/32168 ,  H01L2224/32227 ,  H01L2224/33181 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/1203 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/15798 ,  H01L2924/181 ,  H01L2924/186 ,  H05K1/117 ,  H05K1/144 ,  H05K1/145 ,  H05K3/403 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/83

摘要： A miniaturized SMD diode package involves using a diode chip whose bottom surface has a positive electrode and a negative electrode, using a circuit board instead of a conventional lead frame during packaging, and using Charge-Coupled Device (CCD) image registration technology to perform chip bonding; the beneficial advantages brought from a process for producing the same including to simplify producing process and reduce manufacturing cost, to improve accuracy and precision of producing the miniaturized SMD diode package due to using a circuit board instead of conventionally used lead frame, and to ensure the produced miniaturized SMD diode package possesses excellent diode characteristics without distortion or defect.

公开(公告)号：US20220418095A1

公开(公告)日：2022-12-29

申请号：US17396803

申请日：2021-08-09

申请人： SFI ELECTRONICS TECHNOLOGY INC.

发明人： CHING HOHN LIEN ,  HUNG TSUNG HSU ,  CHIH HSIEN HSU ,  CHENG HSIEN CHIU ,  HSING-TSAI HUANG

IPC分类号： H05K1/02 ,  H05K9/00

摘要： ESD suppressor and manufacturing method thereof. The ESD suppressor include at least two printed circuit boards, one insulating frame, two terminal electrodes and two or more interior electrodes. The insulating frame is positioned between the two printed circuit boards, so as to form a main structure with a cavity. For each printed circuit board, at least one interior electrode is positioned on the surface facing the cavity and separated from other interior electrode(s). Two terminal electrodes are positioned on two different surfaces of the main structure and electrically connected to different interior electrodes respectively. Optionally, the insulating frame is a hallowed out printed circuit board or a frame formed by printing insulating material. In the manufacturing method, the thickness of the insulating frame is adjusted to adjust the relative distance between different printed circuit boards, so as to further adjust the breakdown voltage of the ESD suppressor

公开(公告)号：US20170030656A1

公开(公告)日：2017-02-02

申请号：US14814644

申请日：2015-07-31

申请人： SFI Electronics Technology Inc.

发明人： Ching-Hohn LIEN ,  Kuang-Hsin CHU

IPC分类号： F28D20/02 ,  F24J2/34

CPC分类号： F28D20/021 ,  F28D9/0062 ,  F28D9/0081 ,  F28D9/0093 ,  F28D2020/0008 ,  F28D2020/0013 ,  F28D2020/0047 ,  F28D2020/0082 ,  Y02E60/145 ,  Y02E70/30

摘要： A thermal energy storage facility for use in heat storage and heat release comprises a heat storage/release mechanism constituted by multiple heat storage/heat exchange units stacked up, each unit at least comprises a heat storage board having parallel grooves for loading phase-change material (PCM) therein and a heat exchange plate having micro-channel groups for heat transfer fluid (HTF) flowed through to exchange heat with the PCM; particularly two or more the thermal energy storage facilities can be worked together by combination in series or/and in parallel to input of thermal energy, absorption of thermal energy and both simultaneously from the PCM, and the thermal energy storage facility capably operating at a heat storage temperature higher than 1200° C. is suited for use in solar thermal power generation system to improve overall efficiency of solar thermal power to reach 35-40%.

摘要翻译： 用于蓄热和放热的热能存储设备包括由堆叠的多个蓄热/热交换单元构成的蓄热/释放机构，每个单元至少包括具有用于装载相变材料的平行槽的蓄热板 （PCM），并且具有用于传热流体（HTF）的微通道组的热交换板流过以与PCM交换热量; 特别是两个或更多个热能储存设备可以通过与PCM输入的热能，热能的吸收和两者同时串联或并联并联在一起，以及能够以热量运行的热能存储设备 储存温度高于1200°C适用于太阳能热发电系统，以提高太阳能热功率的总体效率达到35-40％。

公开(公告)号：US20210280373A1

公开(公告)日：2021-09-09

申请号：US16926324

申请日：2020-07-10

申请人： SFI Electronics Technology Inc.

发明人： Ching-Hohn Len ,  Hong Zong Xu ,  Zhi Xian Xu ,  Hsing Tsai Huang ,  Jie-An Zhu

IPC分类号： H01G4/224 ,  H01G4/30

摘要： An electrical device package structure and manufacturing method thereof is disclosed. The manufacturing method comprises: providing an electrical device body having at least two electrodes, wherein an outer surface of the electrical device body is partially covered by the electrodes, and outer surfaces of the electrodes are covered by a plastic material; forming a first protective layer including phosphate salt at least on the exposed outer surface of the electrical device body; and forming a second protective layer including glass at least on an exposed outer surface of the first protective layer. The present invention can prevent the electrical device body and/or the electrodes from being damaged on their manufacturing process, and avoid a forming high impedance layer on an electrode.

公开(公告)号：US20180090248A1

公开(公告)日：2018-03-29

申请号：US15709606

申请日：2017-09-20

申请人： SFI Electronics Technology Inc.

发明人： Ching-Hohn LIEN ,  Jie-An ZHU ,  Zhi-Xian XU ,  Ting-Yi FANG ,  Hong-Zong XU

IPC分类号： H01C17/06 ,  H01C7/102 ,  H01C7/10 ,  H01C1/14 ,  H01C17/28

CPC分类号： H01C17/06 ,  H01C1/14 ,  H01C7/1006 ,  H01C7/102 ,  H01C7/112 ,  H01C7/18 ,  H01C17/065 ,  H01C17/06546 ,  H01C17/281

摘要： A process for producing a multilayer varistor (MLV) if remained its size unchanged as prior arts is favorable to outstandingly increase overall current-carrying area and improve the performance of final produced MLV; and the MLV has laminated a lower cap, an inner-electrode stack formed from piling up several inner-electrode gaps (g), and an upper cap into a unity, and at least satisfies the condition that the lower cap and the upper cap has a thickness smaller than a thickness of the inner-electrode gap (g), but equal to or greater than 0.1 times of the thickness of the inner-electrode gap (g).

公开(公告)号：US20150200147A1

公开(公告)日：2015-07-16

申请号：US14585857

申请日：2014-12-30

申请人： SFI Electronics Technology Inc.

发明人： Ching-Hohn LIEN ,  Xing- Xiang HUANG ,  Hsing-Tsai HUANG ,  Hong-Zong XU ,  Yi-Wei CHEN

IPC分类号： H01L23/15 ,  H01L23/02 ,  H01L23/00 ,  H01L21/78 ,  H01L21/56 ,  H01L23/31 ,  H01L29/861

CPC分类号： H01L24/97 ,  H01L21/4853 ,  H01L21/4867 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L21/7813 ,  H01L23/02 ,  H01L23/15 ,  H01L23/3107 ,  H01L23/49805 ,  H01L23/49833 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/96 ,  H01L25/0652 ,  H01L29/861 ,  H01L2224/06181 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/29294 ,  H01L2224/29311 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/32168 ,  H01L2224/32227 ,  H01L2224/33181 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/1203 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/15798 ,  H01L2924/181 ,  H01L2924/186 ,  H05K1/117 ,  H05K1/144 ,  H05K1/145 ,  H05K3/403 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/83

摘要： A miniaturized SMD diode package involves using a diode chip whose bottom surface has a positive electrode and a negative electrode, using a circuit board instead of a conventional lead frame during packaging, and using Charge-Coupled Device (CCD) image registration technology to perform chip bonding; the beneficial advantages brought from a process for producing the same including to simplify producing process and reduce manufacturing cost, to improve accuracy and precision of producing the miniaturized SMD diode package due to using a circuit board instead of conventionally used lead frame, and to ensure the produced miniaturized SMD diode package possesses excellent diode characteristics without distortion or defect.

摘要翻译： 小型SMD二极管封装包括使用二极管芯片，其底表面具有正极和负极，在封装期间使用电路板代替常规引线框架，并使用电荷耦合器件（CCD）图像配准技术来执行芯片 粘接; 由于使用电路板而不是常规使用的引线框架，从其制造方法带来的有益优点包括简化制造工艺并降低制造成本，提高生产小型化SMD二极管封装的精度和精度，并确保 生产的小型SMD二极管封装具有优异的二极管特性，无失真或缺陷。

公开(公告)号：US20150123254A1

公开(公告)日：2015-05-07

申请号：US14523066

申请日：2014-10-24

申请人： SFI Electronics Technology Inc.

发明人： Ching-Hohn LIEN ,  Xing- Xiang HUANG ,  Hsing-Tsai HUANG ,  Hong-Zong XU

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L25/07 ,  H01L25/00

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49555 ,  H01L23/49562 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/2732 ,  H01L2224/2741 ,  H01L2224/29294 ,  H01L2224/29311 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/9221 ,  H01L2224/97 ,  H01L2924/00015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12 ,  H01L2924/1203 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/48

摘要： A novel chip scale diode package due to no containing outer lead pins is miniaturized like a chip scale appearance to promote dimensional accuracy so that the diode package is so suitably produced by automation equipment to get automated mass production; the produced diode package may contain one or more diode chips to increase versatile functions more useful in applications, such as produced as a SMT diode package or an array-type SMT diode, and the present diode package due to made of no lead-containing material conforms to requirements for environmental protection.

摘要翻译： 由于不含外部引脚引脚的新颖的芯片尺寸二极管封装小型化，像芯片尺寸外观，以提高尺寸精度，使得二极管封装由自动化设备适当地生产以获得自动批量生产; 所生成的二极管封装可以包含一个或多个二极管芯片，以增加在应用中更有用的通用功能，例如作为SMT二极管封装或阵列型SMT二极管制造的，以及由于不含含铅材料制成的本二极管封装 符合环保要求。

公开(公告)号：US09947444B1

公开(公告)日：2018-04-17

申请号：US15709606

申请日：2017-09-20

申请人： SFI Electronics Technology Inc.

发明人： Ching-Hohn Lien ,  Jie-An Zhu ,  Zhi-Xian Xu ,  Ting-Yi Fang ,  Hong-Zong Xu

IPC分类号： H01C7/10 ,  H01C17/06 ,  H01C7/102 ,  H01C17/28 ,  H01C1/14

CPC分类号： H01C17/06 ,  H01C1/14 ,  H01C7/1006 ,  H01C7/102 ,  H01C7/112 ,  H01C7/18 ,  H01C17/065 ,  H01C17/06546 ,  H01C17/281

摘要： A process for producing a multilayer varistor (MLV) if remained its size unchanged as prior arts is favorable to outstandingly increase overall current-carrying area and improve the performance of final produced MLV; and the MLV has laminated a lower cap, an inner-electrode stack formed from piling up several inner-electrode gaps (g), and an upper cap into a unity, and at least satisfies the condition that the lower cap and the upper cap has a thickness smaller than a thickness of the inner-electrode gap (g), but equal to or greater than 0.1 times of the thickness of the inner-electrode gap (g).