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公开(公告)号：US09654139B2
公开(公告)日：2017-05-16
申请号：US13354272
申请日：2012-01-19
CPC分类号： H03M7/4018 , H04N19/13 , H04N19/21 , H04N19/91
摘要： Provided is an electronic device configured for high throughput binarization mode. The electronic device includes a processor and instructions stored in memory that is in electronic communication with the processor. The electronic device obtains a block of transformed and quantized coefficients (TCQs). The electronic device determines whether a high throughput binarization mode condition is met. If the condition is met, the electronic device uses the high throughput binarization mode to process the block. If the condition is not met, the electronic device does not use the high throughput binarization mode to process the block. The electronic device transmits the generated first or second bitstream to a decoder.
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公开(公告)号：US09214468B2
公开(公告)日：2015-12-15
申请号：US13447034
申请日：2012-04-13
申请人： Seung Hwan Kim
发明人： Seung Hwan Kim
IPC分类号： H01L21/28 , H01L27/108 , H01L29/417 , H01L29/45 , H01L29/66 , H01L29/78
CPC分类号： H01L27/10876 , H01L27/10823 , H01L27/10885 , H01L29/41741 , H01L29/456 , H01L29/66666 , H01L29/7827
摘要： A semiconductor device and a method for fabricating the same are provided to enable a bit line to be formed easily, increase a bit line process margin and reduce capacitance between the adjacent bit lines. The semiconductor device comprises: a first pillar and a second pillar each extended vertically from a semiconductor substrate and including a vertical channel region; a first bit line located in the lower portion of the vertical channel region inside the first pillar and the second pillar; and an interlayer insulating film located between the first pillar and the second pillar that include the first bit line.
摘要翻译： 提供一种半导体器件及其制造方法，以便能够容易地形成位线，增加位线处理余量并减小相邻位线之间的电容。 半导体器件包括：第一柱和第二柱，每个第一柱和第二柱各自从半导体衬底垂直延伸并且包括垂直沟道区; 位于所述第一柱和所述第二柱内的所述垂直沟道区的下部的第一位线; 以及位于包括第一位线的第一柱和第二柱之间的层间绝缘膜。
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3.发明申请PACKAGE SUBSTRATES, SEMICONDUCTOR PACKAGES HAVING THE PACKAGE SUBSTRATES, AND METHODS FOR FABRICATING THE SEMICONDUCTOR PACKAGES 有权包装衬底，具有封装衬底的半导体封装以及用于制造半导体封装的方法公开(公告)号：US20140063723A1
公开(公告)日：2014-03-06
申请号：US14014810
申请日：2013-08-30
申请人： YoungHoon RO , Seung Hwan Kim , Jung-Ho Park
发明人： YoungHoon RO , Seung Hwan Kim , Jung-Ho Park
IPC分类号： H01L23/48
CPC分类号： H01L23/49855 , H01L21/4853 , H01L21/486 , H01L21/565 , H01L23/3114 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L23/49894 , H01L2224/131 , H01L2224/16238 , H01L2224/45144 , H01L2224/48228 , H01L2924/014 , H01L2924/00
摘要： Package substrates, semiconductor packages including the package substrates, and methods for fabricating the semiconductor packages are provided. A package substrate may include a core including a first surface on which a semiconductor chip is disposed and a second surface opposite the first surface. The package substrate may also include a metal pad on the second surface of the core. The metal pad may include a saline water corrosion resistant surface.
摘要翻译： 提供包装衬底，包括封装衬底的半导体封装以及用于制造半导体封装的方法。 封装基板可以包括芯，芯包括设置有半导体芯片的第一表面和与第一表面相对的第二表面。 封装衬底还可以包括在芯的第二表面上的金属焊盘。 金属垫可以包括盐水耐腐蚀表面。
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4.发明授权Smart card-based browsing system and smart card-based browsing method and smart card for the same 有权基于智能卡的浏览系统和基于智能卡的浏览方式和智能卡相同公开(公告)号：US08579202B2
公开(公告)日：2013-11-12
申请号：US13128850
申请日：2010-07-08
申请人： Seung Hwan Kim
发明人： Seung Hwan Kim
IPC分类号： G06K19/06
CPC分类号： G06F9/54 , G06F17/30861 , H04L67/02
摘要： Disclosed are a smart card-based browsing system, a smart card-based browsing method, and smart card for the same. A browser is installed in the smart card to form a direct connection path with an SCWS installed in the smart card. The number of sockets for HTTP request/response required to be as many as the number of contents for services between the smart card and the user terminal is reduced, so that the services can be smoothly provided through a rapid and effective interface. A web service can be provided to various multimedia appliances compatible with the smart card regardless of the existence of the browser on the user terminal and the type and version of the browser.
摘要翻译： 公开了基于智能卡的浏览系统，基于智能卡的浏览方法和用于其的智能卡。 智能卡中安装了浏览器，以形成与智能卡中安装的SCWS的直接连接路径。 用于HTTP请求/响应的套接字的数量减少到与智能卡和用户终端之间的服务的内容数量一样多，从而可以通过快速有效的界面平滑地提供服务。 可以将web服务提供给与智能卡兼容的各种多媒体设备，而不管用户终端上是否存在浏览器以及浏览器的类型和版本。
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公开(公告)号：US20130188734A1
公开(公告)日：2013-07-25
申请号：US13354272
申请日：2012-01-19
CPC分类号： H03M7/4018 , H04N19/13 , H04N19/21 , H04N19/91
摘要： An electronic device configured for high throughput binarization mode is described. The electronic device includes a processor and instructions stored in memory that is in electronic communication with the processor. The electronic device obtains a block of transformed and quantized coefficients (TCQs). The electronic device determines whether a high throughput binarization mode condition is met. If the condition is met, the electronic device uses the high throughput binarization mode to process the block. If the condition is not met, the electronic device does not use the high throughput binarization mode to process the block. The electronic device transmits the generated first or second bitstream to a decoder.
摘要翻译： 描述了配置用于高吞吐量二值化模式的电子设备。 电子设备包括处理器和存储在与处理器电子通信的存储器中的指令。 电子设备获得变换和量化系数块（TCQ）。 电子设备确定是否满足高吞吐量二值化模式条件。 如果满足条件，电子设备使用高吞吐量二值化模式来处理该块。 如果不满足条件，则电子设备不使用高吞吐量二值化模式来处理该块。 电子设备将生成的第一或第二比特流发送到解码器。
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公开(公告)号：US20130105875A1
公开(公告)日：2013-05-02
申请号：US13447034
申请日：2012-04-13
申请人： Seung Hwan KIM
发明人： Seung Hwan KIM
IPC分类号： H01L27/108
CPC分类号： H01L27/10876 , H01L27/10823 , H01L27/10885 , H01L29/41741 , H01L29/456 , H01L29/66666 , H01L29/7827
摘要： A semiconductor device and a method for fabricating the same are provided to enable a bit line to be formed easily, increase a bit line process margin and reduce capacitance between the adjacent bit lines. The semiconductor device comprises: a first pillar and a second pillar each extended vertically from a semiconductor substrate and including a vertical channel region; a first bit line located in the lower portion of the vertical channel region inside the first pillar and the second pillar; and an interlayer insulating film located between the first pillar and the second pillar that include the first bit line.
摘要翻译： 提供一种半导体器件及其制造方法，以便能够容易地形成位线，增加位线处理余量并减小相邻位线之间的电容。 半导体器件包括：第一柱和第二柱，每个第一柱和第二柱各自从半导体衬底垂直延伸并且包括垂直沟道区; 位于所述第一柱和所述第二柱内的所述垂直沟道区的下部的第一位线; 以及位于包括第一位线的第一柱和第二柱之间的层间绝缘膜。
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7.发明授权Non-intrusive movement measuring apparatus and method using wearable electro-conductive fiber 有权非侵入式运动测量装置和使用耐磨导电纤维的方法公开(公告)号：US08348865B2
公开(公告)日：2013-01-08
申请号：US12539969
申请日：2009-08-12
申请人： Ji Wook Jeong , Yong Won Jang , Seung Hwan Kim , Seon Hee Park
发明人： Ji Wook Jeong , Yong Won Jang , Seung Hwan Kim , Seon Hee Park
CPC分类号： A61B5/1118 , A61B5/1116 , A61B5/1126 , A61B5/221 , A61B5/4528 , A61B5/4866 , A61B5/6804 , A63B21/0023 , A63B24/0003 , A63B24/0006 , A63B24/0062 , A63B2071/0647 , A63B2220/80 , A63B2220/803 , A63B2220/836 , A63B2225/20 , A63B2225/50 , A63B2230/75
摘要： There is provided a non-intrusive movement measuring apparatus and method using wearable electro-conductive fibers. A non-intrusive movement measuring apparatus using wearable electro-conductive fibers according to an aspect of the invention may include a signal measurement device measuring a plurality of movement signals using a plurality of electro-conductive fibers put on user's body parts and having resistances varying according to the volume of the user's body parts; a movement analysis device analyzing the plurality of movement signals to obtain a user's movement patterns and movement intensity; and a movement display device displaying a movement analysis result of the movement analysis device. Accordingly, user's movement can be measured without limiting the user's radius of action.
摘要翻译： 提供了一种使用耐磨导电纤维的非侵入式运动测量装置和方法。 根据本发明的一个方面的使用耐磨导电纤维的非侵入式移动测量装置可以包括信号测量装置，其使用放置在用户身体部位上的多个导电纤维测量多个移动信号，并且具有根据 到用户身体部位的体积; 运动分析装置，分析多个运动信号以获得用户的运动模式和运动强度; 以及运动显示装置，其显示运动分析装置的运动分析结果。 因此，可以在不限制用户的动作半径的情况下测量用户的移动。
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8.发明申请公开(公告)号：US20130003763A1
公开(公告)日：2013-01-03
申请号：US13634540
申请日：2011-03-11
申请人： Nam-Soo Myung , Seung-Hwan Kim
发明人： Nam-Soo Myung , Seung-Hwan Kim
IPC分类号： H01S3/10
CPC分类号： H01S3/00 , H01S3/0014 , H01S3/005 , H01S3/0057 , H01S3/0085 , H01S3/08054 , H01S3/10 , H01S3/10061 , H01S3/1301 , H01S3/1308 , H01S3/2366 , H01S3/2383
摘要： The present invention relates to an apparatus for generating an ultra-short ultra-high intensity pulse laser, comprising: a pulse laser providing unit which generates an ultra-short ultra-high intensity pulse laser, stretches pulse width, then selects and provides only a pulse laser having a predetermined polarizing angle; a polarization characteristic adjusting unit which divides the pulse laser provided by the pulse laser providing unit into S-polarizing component light and P-polarizing component light, varies the phase difference and amplitude difference between the S-polarizing component light and the P-polarizing component light, and combines the two types of light to generate a pulse laser with varied polarization characteristics; and a pulse compression unit which compresses the pulse width of the pulse laser, the polarization characteristics of which are varied by the polarization characteristic adjusting unit, and outputs the pulse laser.
摘要翻译： 本发明涉及一种用于产生超短超高强度脉冲激光器的装置，包括：脉冲激光提供单元，其生成超短超高强度脉冲激光器，延伸脉冲宽度，然后选择并提供一个 具有预定偏振角的脉冲激光; 将由脉冲激光提供单元提供的脉冲激光分割为S偏振分量光和P偏振分量光的偏振特性调整单元改变S偏振分量光和P偏振分量之间的相位差和振幅差 并组合两种类型的光以产生具有变化的偏振特性的脉冲激光; 以及脉冲压缩单元，其压缩脉冲激光器的脉冲宽度，其偏振特性由偏振特性调整单元改变，并输出脉冲激光器。
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9.发明申请公开(公告)号：US20130001443A1
公开(公告)日：2013-01-03
申请号：US13634071
申请日：2011-03-11
申请人： Yong Woon Park , In Soo Ko , Sung Ju Park , Yong Jeong Park , Seung Hwan Kim , Ju Ho Hong , Sung Ik Moon
发明人： Yong Woon Park , In Soo Ko , Sung Ju Park , Yong Jeong Park , Seung Hwan Kim , Ju Ho Hong , Sung Ik Moon
CPC分类号： H01J37/06 , H01J3/024 , H01J3/027 , H01J37/075 , H01J2237/0473 , H01J2237/061 , H01J2237/166 , Y10T29/49004
摘要： The present invention relates to an apparatus for generating an electron beam, comprising: a cathode; a housing which has an opening formed at one side thereof such that the cathode is coupled to the opening, and which has a resonant cavity formed therein; and a gasket interposed between the cathode and the housing such that the gasket is compressed in accordance with the coupling strength between the cathode and the housing so as to shut off the resonant cavity from the outside.
摘要翻译： 本发明涉及一种用于产生电子束的装置，包括：阴极; 壳体，其一侧形成有开口，所述开口与所述开口相连并且在其中形成有谐振腔; 以及插入在阴极和壳体之间的衬垫，使得衬垫根据阴极和壳体之间的耦合强度被压缩，以便将谐振腔从外部截止。
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公开(公告)号：US20120298625A1
公开(公告)日：2012-11-29
申请号：US13371838
申请日：2012-02-13
申请人： Dae Sik Lee , Jun Bo Yoon , Dong Hoon Choi , Byung Kee Lee , Moon Youn Jung , Seung Hwan Kim
发明人： Dae Sik Lee , Jun Bo Yoon , Dong Hoon Choi , Byung Kee Lee , Moon Youn Jung , Seung Hwan Kim
CPC分类号： C23C14/06 , B01D67/0062 , B82Y30/00 , B82Y40/00 , C23C14/024 , C23C16/56 , C23F1/02
摘要： In the present invention, a nanoporous membrane having a columnar structure is manufactured through a deposition technology used in a semiconductor process, and the size of a nanopore is adjusted by etching the lower surface of the manufactured nanoporous membrane or using a seed layer and a nanobead layer so that scaling up is available at a lowered process temperature and the size of the nanopore can be easily adjusted when manufacturing the nanoporous membrane having a columnar structure.
摘要翻译： 在本发明中，通过在半导体工艺中使用的沉积技术制造具有柱状结构的纳米多孔膜，并且通过蚀刻制造的纳米多孔膜的下表面或使用种子层和纳米棒来调整纳米孔的尺寸 使得在降低的工艺温度下可以进行放大，并且当制造具有柱状结构的纳米多孔膜时，可以容易地调整纳米孔的尺寸。
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