利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

71 条记录 (耗时 0.032 秒)

    Method of fabricating semiconductor device
    1.
    发明授权
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US09349583B2

    公开(公告)日：2016-05-24

    申请号：US13775595

    申请日：2013-02-25

    申请人： Min-Young Park ,  Youn-Soo Kim ,  Sang-Yeol Kang ,  Cha-Young Yoo ,  Jae-Soon Lim ,  Jae-Hyoung Choi

    发明人： Min-Young Park ,  Youn-Soo Kim ,  Sang-Yeol Kang ,  Cha-Young Yoo ,  Jae-Soon Lim ,  Jae-Hyoung Choi

    IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  H01L21/28 ,  H01L49/02

    CPC分类号： H01L21/02104 ,  C23C16/045 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/28282 ,  H01L28/40

    摘要： Methods of fabricating a semiconductor device include forming a deposited film on a semiconductor substrate in a process chamber by repeatedly forming unit layers on the semiconductor substrate. The unit layer is formed by forming a preliminary unit layer on the semiconductor substrate by supplying a process material including a precursor material and film-control material into the process chamber, purging the process chamber, forming a unit layer from the preliminary unit layer, and again purging the process chamber. The precursor material includes a central atom and a ligand bonded to the central atom, and the film-control material includes a hydride of the ligand.

    摘要翻译： 制造半导体器件的方法包括通过在半导体衬底上重复形成单位层，在处理室中的半导体衬底上形成沉积膜。 单元层通过在半导体基板上形成预备单元层而形成，该方法是将包括前体材料和薄膜控制材料的处理材料供给到处理室中，从处理室中清除处理室，从预备单元层形成单元层，以及 再次清洗处理室。 前体材料包括中心原子和与中心原子键合的配体，膜控制材料包括配体的氢化物。

    Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
    3.
    发明授权
    Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor 有权
    前体组成，形成层的方法，形成栅极结构的方法和形成电容器的方法

    公开(公告)号：US08563085B2

    公开(公告)日：2013-10-22

    申请号：US13035659

    申请日：2011-02-25

    申请人： Youn-Joung Cho ,  Youn-Soo Kim ,  Kyu-Ho Cho ,  Jung-Ho Lee ,  Jae-Hyoung Choi ,  Seung-Min Ryu

    发明人： Youn-Joung Cho ,  Youn-Soo Kim ,  Kyu-Ho Cho ,  Jung-Ho Lee ,  Jae-Hyoung Choi ,  Seung-Min Ryu

    IPC分类号： C23C16/00

    CPC分类号： C23C16/18 ,  C23C16/405 ,  C23C16/45553 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91

    摘要： In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

    摘要翻译： 在形成层的方法中，通过使前体组合物与给电子化合物接触以将稳定的前体组合物接触到基底上来稳定包含金属和螯合金属的配体的前体组合物。 将反应物引入到底物上以与稳定化的前体组合物中的金属结合。 在将供电子化合物引入到基板上之后，将前体组合物引入到基板上，将稳定化的前体组合物提供到基板上。 引入前体组合物之前和之后，将电子给体化合物连续引入到基质上。

    METHOD OF FORMING METAL THIN FILM
    4.
    发明申请
    METHOD OF FORMING METAL THIN FILM 有权
    形成金属薄膜的方法

    公开(公告)号：US20120094022A1

    公开(公告)日：2012-04-19

    申请号：US13242037

    申请日：2011-09-23

    申请人： Jae-Soon Lim ,  Jae-Hyoung Choi ,  Youn-Soo Kim ,  Min-Young Park ,  Sang-Yeol Kang

    发明人： Jae-Soon Lim ,  Jae-Hyoung Choi ,  Youn-Soo Kim ,  Min-Young Park ,  Sang-Yeol Kang

    IPC分类号： C23C16/06 ,  C23C16/44

    CPC分类号： C23C16/34 ,  C23C16/45525

    摘要： Provided is a method of forming a metal thin film which can reduce leakage current while improving electric properties by improving step coverage of a device. The method of forming a metal thin film includes supplying a metal precursor including chlorine, purging byproducts produced after the supplying of the metal precursor by injecting a purge gas, supplying a reactant to allow the reactant and the metal precursor to react with each other to form a thin film layer, and purging the byproducts produced after the reaction by injecting a purge gas, wherein before the supplying of the metal precursor, the method further includes supplying a reactant to be adsorbed on a treated product.

    摘要翻译： 提供一种形成金属薄膜的方法，其可以通过改善器件的台阶覆盖而改善电特性，从而降低漏电流。 形成金属薄膜的方法包括：供给包含氯的金属前体，通过注入吹扫气体，在供给金属前体之后产生的副产物，供应反应物以允许反应物和金属前体彼此反应形成 薄膜层，并且通过注入吹扫气体来净化反应后产生的副产物，其中在供给金属前体之前，所述方法还包括供给被处理产物上被吸附的反应物。

    Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor
    5.
    发明申请
    Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor 有权
    前体成分，形成层的方法，形成栅极结构的方法和形成电容器的方法

    公开(公告)号：US20110183527A1

    公开(公告)日：2011-07-28

    申请号：US13035659

    申请日：2011-02-25

    申请人： Youn-Joung Cho ,  Youn-Soo Kin ,  Kyu-Ho Cho ,  Jung-Ho Lee ,  Jae-Hyoung Choi ,  Seung-Min Ryu

    发明人： Youn-Joung Cho ,  Youn-Soo Kin ,  Kyu-Ho Cho ,  Jung-Ho Lee ,  Jae-Hyoung Choi ,  Seung-Min Ryu

    IPC分类号： H01L21/314

    CPC分类号： C23C16/18 ,  C23C16/405 ,  C23C16/45553 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91

    摘要： In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

    摘要翻译： 在形成层的方法中，通过使前体组合物与给电子化合物接触来稳定前体组合物，该组合物包含金属和与金属螯合的配体，以将稳定化的前体组合物提供到基底上。 将反应物引入到底物上以与稳定化的前体组合物中的金属结合。 在将供电子化合物引入到基板上之后，将前体组合物引入到基板上，将稳定化的前体组合物提供到基板上。 引入前体组合物之前和之后，将电子给体化合物连续引入到基质上。

    Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrode
    8.
    发明授权
    Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrode 有权
    在下电极中制造具有化学阻挡层的金属 - 绝缘体 - 金属电容器的方法

    公开(公告)号：US07655519B2

    公开(公告)日：2010-02-02

    申请号：US11216639

    申请日：2005-09-01

    申请人： Eun-ae Chung ,  Jae-hyoung Choi ,  Jung-hee Chung ,  Young-sun Kim ,  Cha-young Yoo

    发明人： Eun-ae Chung ,  Jae-hyoung Choi ,  Jung-hee Chung ,  Young-sun Kim ,  Cha-young Yoo

    IPC分类号： H01L21/8242

    CPC分类号： H01L21/7687 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/75

    摘要： A metal-insulator-metal (MIM) capacitor includes a lower electrode, a dielectric layer, and an upper electrode. The lower electrode includes a first conductive layer, a chemical barrier layer on the first conductive layer, and a second conductive layer on the chemical barrier layer. The chemical barrier layer is between the first and second conductive layers and is a different material than the first and second conductive layers. The dielectric layer is on the lower electrode. The upper electrode is on the dielectric layer opposite to the lower electrode. The first and second conductive layers can have the same thickness. The chemical barrier layer can be thinner than each of the first and second conductive layers. Related methods are discussed.

    摘要翻译： 金属绝缘体金属（MIM）电容器包括下电极，电介质层和上电极。 下电极包括第一导电层，第一导电层上的化学阻挡层和化学阻挡层上的第二导电层。 化学屏障层位于第一和第二导电层之间，并且是与第一和第二导电层不同的材料。 介电层位于下电极上。 上电极位于与下电极相对的电介质层上。 第一和第二导电层可以具有相同的厚度。 化学阻挡层可以比第一和第二导电层中的每一个薄。 讨论相关方法。

    Capacitor, method of forming the same, semiconductor device having the capacitor and method of manufacturing the same
    10.
    发明授权
    Capacitor, method of forming the same, semiconductor device having the capacitor and method of manufacturing the same 有权
    电容器，其形成方法，具有电容器的半导体器件及其制造方法

    公开(公告)号：US07482242B2

    公开(公告)日：2009-01-27

    申请号：US11523514

    申请日：2006-09-20

    申请人： Hong-Bum Park ,  Woo-Sung Lee ,  Nam-Kyu Kim ,  Jung-Hee Chung ,  Jae-Hyoung Choi

    发明人： Hong-Bum Park ,  Woo-Sung Lee ,  Nam-Kyu Kim ,  Jung-Hee Chung ,  Jae-Hyoung Choi

    IPC分类号： H01L21/20

    CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852

    摘要： Example embodiments relate to a capacitor, a method of forming the same, a semiconductor device having the capacitor and a method of manufacturing the same. Other example embodiments are directed to a capacitor having an upper electrode structure including a first upper electrode and a second upper electrode, a method of forming the same, a semiconductor device having the capacitor and a method of manufacturing the same. In a method of forming a capacitor, a lower electrode may be formed on a substrate, and then a dielectric layer may be formed on the lower electrode. An upper electrode structure may be formed on the dielectric layer. The upper electrode structure may include a first upper electrode and a second upper electrode. The second upper electrode may include at least two of a silicon layer, a first silicon germanium layer and a second silicon germanium layer doped with p-type impurities. The upper electrode structure may be formed without generating voids between the dielectric layer and the upper electrode structure. The capacitor and the semiconductor device having the upper electrode structure may have improved electrical characteristics.

    摘要翻译： 示例性实施例涉及电容器，其形成方法，具有电容器的半导体器件及其制造方法。 其他示例性实施例涉及具有包括第一上电极和第二上电极的上电极结构的电容器，其形成方法，具有电容器的半导体器件及其制造方法。 在形成电容器的方法中，可以在基板上形成下电极，然后在下电极上形成电介质层。 上电极结构可以形成在电介质层上。 上电极结构可以包括第一上电极和第二上电极。 第二上电极可以包括硅层，第一硅锗层和掺杂有p型杂质的第二硅锗层中的至少两个。 可以形成上电极结构，而不会在电介质层和上电极结构之间产生空隙。 具有上电极结构的电容器和半导体器件可具有改善的电特性。