公开(公告)号：US08399353B2

公开(公告)日：2013-03-19

申请号：US13081172

申请日：2011-04-06

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara

IPC分类号： H01L21/768

CPC分类号： C23C16/16 ,  C23C14/024 ,  C23C14/025 ,  C23C14/046 ,  C23C14/165 ,  C23C14/345 ,  C23C14/568 ,  C23C14/5873 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/54 ,  C23C16/56 ,  C23C28/023 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76882 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.

摘要翻译： 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并通过在加热衬底的同时在PVD膜上形成Cu膜，将铜包埋在沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。

公开(公告)号：US20120222782A1

公开(公告)日：2012-09-06

申请号：US13496714

申请日：2010-08-27

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Tadahiro Ishizaka ,  Chiaki Yasumuro ,  Takara Kato

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Tadahiro Ishizaka ,  Chiaki Yasumuro ,  Takara Kato

IPC分类号： C21D1/26 ,  B05D5/12 ,  B05D3/02

CPC分类号： H01L23/53238 ,  H01L21/76829 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a Cu wiring forming method which is followed by a post-process including a treatment of a temperature of 500° C. or higher, an adhesion film made of a metal having a lattice spacing that differs from the lattice spacing of Cu by 10% or less is formed on a substrate having a trench and/or a hole in the surface such that the adhesion film is deposited on at least the bottom and side surfaces of the trench and/or hole. A Cu film is formed on the adhesion film to fill the trench and/or hole. An annealing process is performed on the substrate on which the Cu film has been formed at 350° C. or higher. The CU film is polished to leave only the part of the Cu film which corresponds to the trench and/or hole. A cap is formed on the polished Cu film to form a Cu wiring.

摘要翻译： 在Cu布线形成方法中，其后是包括处理500℃或更高温度的后续处理，由具有不同于Cu的晶格间距的晶格间距的金属制成的粘合膜为10％ 或更少的表面形成在具有沟槽和/或孔的衬底上，使得粘附膜沉积在沟槽和/或孔的至少底部和侧表面上。 在粘合膜上形成Cu膜以填充沟槽和/或孔。 在其上形成有Cu膜的基板上进行退火处理为350℃以上。 CU膜被抛光以仅留下对应于沟槽和/或孔的Cu膜的部分。 在抛光的Cu膜上形成盖以形成Cu布线。

公开(公告)号：US08859422B2

公开(公告)日：2014-10-14

申请号：US13359138

申请日：2012-01-26

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara ,  Kenzi Suzuki

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara ,  Kenzi Suzuki

IPC分类号： H01L21/44

CPC分类号： H01L21/02104 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345 ,  C23C14/541 ,  C23C14/5806 ,  C23C16/16 ,  H01J37/32899 ,  H01J37/34

摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.

摘要翻译： 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。

公开(公告)号：US20120064717A1

公开(公告)日：2012-03-15

申请号：US13230351

申请日：2011-09-12

申请人： Takara KATO ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Osamu Yokoyama

发明人： Takara KATO ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Osamu Yokoyama

IPC分类号： H01L21/768 ,  C23C16/16 ,  C23C16/56 ,  G06F19/00

CPC分类号： H01L23/53238 ,  C23C16/16 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a CVD-Ru film forming method, an Ru-film is formed on a substrate by means of CVD using a ruthenium carbonyl as a film-forming material before forming a Cu film. Then the substrate on which the aforementioned Ru film is formed is annealed in a hydrogen containing atmosphere.

摘要翻译： 在CVD-Ru膜形成方法中，在形成Cu膜之前，通过使用羰基钌作为成膜材料的CVD在基板上形成Ru膜。 然后将其上形成上述Ru膜的基板在含氢气氛中退火。

公开(公告)号：US20130237053A1

公开(公告)日：2013-09-12

申请号：US13876682

申请日：2011-09-26

申请人： Tadahiro Ishizaka ,  Takashi Sakuma ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Toshihiko Fukushima ,  Hiroyuki Toshima ,  Masaya Kawamata ,  Yasushi Mizusawa ,  Takara Kato

发明人： Tadahiro Ishizaka ,  Takashi Sakuma ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Toshihiko Fukushima ,  Hiroyuki Toshima ,  Masaya Kawamata ,  Yasushi Mizusawa ,  Takara Kato

IPC分类号： H01L21/768 ,  H01J37/34

CPC分类号： H01L21/768 ,  C23C14/021 ,  C23C14/024 ,  C23C14/14 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/541 ,  C23C14/542 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882

摘要： A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating.

摘要翻译： 一种在处理室中从具有等离子体的金属靶产生金属离子的薄膜形成方法，并且在偏压下吸引金属离子以在形成有沟槽的目标物体上沉积金属薄膜。 该方法包括：从靶产生金属离子并以偏压将金属离子吸引到目标物体中，以在沟槽中形成基膜; 在不产生金属离子的状态下以偏压电离稀有气体，并将产生的离子吸引到目标物体中以蚀刻基膜; 并且等离子体溅射靶以产生金属离子并以高频功率将金属离子吸引到物体中以偏压沉积作为金属膜的主膜，同时通过加热回流主膜。

公开(公告)号：US20130252417A1

公开(公告)日：2013-09-26

申请号：US13619083

申请日：2012-09-14

申请人： Tadahiro ISHIZAKA ,  Jonathan Rullan ,  Osamu Yokoyama ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Takara Kato ,  Tatsuo Hatano ,  Hiroaki Kawasaki

发明人： Tadahiro ISHIZAKA ,  Jonathan Rullan ,  Osamu Yokoyama ,  Atsushi Gomi ,  Chiaki Yasumuro ,  Takara Kato ,  Tatsuo Hatano ,  Hiroaki Kawasaki

IPC分类号： H01L21/768

CPC分类号： H01L21/76829 ,  C23C14/025 ,  C23C14/18 ,  C23C14/5806 ,  C23C14/5873 ,  C23C16/0272 ,  C23C16/08 ,  C23C16/56 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/42 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A thin film forming method in which a thin film is formed on a surface of a target object to be processed to fill a recess formed in the surface of the target object includes the steps of forming a metal layer for filling on the surface of the target object to fill the recess formed in the surface of the target object and forming a metal film for preventing diffusion on an entire surface of the target object to cover the metal layer for filling. The thin film forming method further includes the step of annealing the target object having the metal film for preventing diffusion formed thereon.

摘要翻译： 一种薄膜形成方法，其中在要处理的目标物体的表面上形成薄膜以填充形成在目标物体的表面上的凹部的薄膜形成方法包括以下步骤：形成用于填充在靶材表面上的金属层 目的是填充形成在目标物体的表面上的凹部，并形成用于防止在目标物体的整个表面上扩散的金属膜，以覆盖用于填充的金属层。 薄膜形成方法还包括退火具有用于防止扩散形成的金属膜的目标物体的步骤。

公开(公告)号：US20110203310A1

公开(公告)日：2011-08-25

申请号：US13057372

申请日：2009-08-04

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Chiaki Yasumuro

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Chiaki Yasumuro

IPC分类号： B01D53/14 ,  F25J1/02 ,  B01D47/00 ,  B01D53/78

CPC分类号： C23C16/4412 ,  B01D53/002 ,  B01D53/62 ,  B01D53/75 ,  B01D2257/706 ,  B01D2258/0216 ,  B01D2259/416 ,  C23C16/16 ,  Y02C20/30

摘要： A raw material recovery method for recovering a raw material of an organic metallic compound, which has the property of being stable toward a specific refrigerant without being decomposed thereby, from exhaust gas discharged from a treatment container in which a metallic thin film is formed on the surface of an object to be treated by using source gas obtained by vaporizing the raw material is characterized by being provided with a solidification step for solidifying the unreacted source gas by cooling the exhaust gas by bringing the exhaust gas into contact with the refrigerant and reprecipitating the raw material, and a recovery step for separating and recovering the raw material reprecipitated in the solidification step from the refrigerant. To provide a method for controlling an exhaust gas flow rate so that flow of gas in a processing chamber becomes uniform.

摘要翻译： 一种原料回收方法，用于从其中形成有金属薄膜的处理容器排出的废气中回收具有对特定制冷剂稳定的特性的有机金属化合物的原料， 通过使用通过蒸发原料获得的源气体处理的物体的表面的特征在于具有固化步骤，用于通过使废气与制冷剂接触而冷却排气来固化未反应的源气体，并再次沉淀 原料和用于分离和回收在固化步骤中从制冷剂中再沉淀的原料的回收步骤。 提供一种用于控制废气流量使得处理室中的气体流变得均匀的方法。

公开(公告)号：US08408025B2

公开(公告)日：2013-04-02

申请号：US13057372

申请日：2009-08-04

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Chiaki Yasumuro

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Chiaki Yasumuro

IPC分类号： F25J1/00 ,  F25J1/02 ,  C23C16/00 ,  B01D47/00 ,  B01J19/00

CPC分类号： C23C16/4412 ,  B01D53/002 ,  B01D53/62 ,  B01D53/75 ,  B01D2257/706 ,  B01D2258/0216 ,  B01D2259/416 ,  C23C16/16 ,  Y02C20/30

摘要： A raw material recovery method for recovering a raw material of an organic metallic compound, which has the property of being stable toward a specific refrigerant without being decomposed thereby, from exhaust gas discharged from a treatment container in which a metallic thin film is formed on the surface of an object to be treated by using source gas obtained by vaporizing the raw material is characterized by being provided with a solidification step for solidifying the unreacted source gas by cooling the exhaust gas by bringing the exhaust gas into contact with the refrigerant and reprecipitating the raw material, and a recovery step for separating and recovering the raw material reprecipitated in the solidification step from the refrigerant. To provide a method for controlling an exhaust gas flow rate so that flow of gas in a processing chamber becomes uniform.

摘要翻译： 一种原料回收方法，用于从其中形成有金属薄膜的处理容器排出的废气中回收具有对特定制冷剂稳定的特性的有机金属化合物的原料， 通过使用通过蒸发原料获得的源气体处理的物体的表面的特征在于具有固化步骤，用于通过使废气与制冷剂接触而冷却排气来固化未反应的源气体，并再次沉淀 原料和用于分离和回收在固化步骤中从制冷剂中再沉淀的原料的回收步骤。 提供一种用于控制废气流量使得处理室中的气体流变得均匀的方法。

公开(公告)号：US08992686B2

公开(公告)日：2015-03-31

申请号：US13225049

申请日：2011-09-02

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga ,  Chiaki Yasumuro

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga ,  Chiaki Yasumuro

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/687 ,  C23C16/44 ,  C23C16/458 ,  H01L21/67

CPC分类号： H01L21/68785 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/4586 ,  H01L21/67109

摘要： Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas.

摘要翻译： 提供了一种用于在安装在安装台结构上的目标物体的表面上通过在处理室中使用包含有机金属化合物的原料气体来形成薄膜的安装台结构。 安装台结构包括：安装台主体，其安装在其上并具有加热器; 以及基部，其在围绕安装台主体的侧表面和底表面的同时支撑安装台主体，底座具有冷却剂流过其中并且保持在高于凝固温度的温度的冷却剂路径， 原料气体的液化温度低于原料气体的分解温度。

公开(公告)号：US08277889B2

公开(公告)日：2012-10-02

申请号：US12443487

申请日：2008-02-19

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Osamu Yokoyama ,  Satoshi Taga

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Osamu Yokoyama ,  Satoshi Taga

IPC分类号： C23C16/04 ,  C23C16/16 ,  C23C16/46

CPC分类号： C23C16/16 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/28562 ,  H01L21/76873

摘要： A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled.

摘要翻译： 公开了一种薄膜形成方法，用于通过将气相中的羰基金属源供给到目标基板的表面并在目标基板的表面附近分解源，在目标基板上沉积金属膜。 该方法包括当金属膜沉积在目标衬底的表面上时，优选在目标衬底的外围部分附近的区域中分解金属羰基源的步骤。 结果，气氛中的CO浓度在目标基板的外周部分局部增加，并且更好地控制金属膜在外周部分上的沉积。