公开(公告)号：US20100304567A1

公开(公告)日：2010-12-02

申请号：US12801127

申请日：2010-05-24

申请人： Masanori SAKAI ,  Tatsuyuki SAITO

发明人： Masanori SAKAI ,  Tatsuyuki SAITO

IPC分类号： H01L21/3205 ,  B05C11/00

CPC分类号： H01L21/28556 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76862

摘要： A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl4 and NH3 reacting with TiCl4 to the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCl4 and a second step of substituting the bonding branch contained in the TiN intermediate film by supplying H2 to the wafer, the first step and the second step being performed in this order.

摘要翻译： 通过向晶片供给TiCl4和NH3与TiCl4反应而形成TiN中间膜的第一步骤形成TiN膜，并且控制用于使没有经历取代反应的键合分支的处理条件保持在 在TiCl4的一部分处的预定浓度，以及通过向晶片供给H2来代替包含在TiN中间膜中的结合分支的第二步骤，第一步骤和第二步骤依次进行。

公开(公告)号：US20120108077A1

公开(公告)日：2012-05-03

申请号：US13231984

申请日：2011-09-14

申请人： Yukinao KAGA ,  Tatsuyuki SAITO ,  Masanori SAKAI ,  Takashi YOKOGAWA

发明人： Yukinao KAGA ,  Tatsuyuki SAITO ,  Masanori SAKAI ,  Takashi YOKOGAWA

IPC分类号： H01L21/316 ,  H01L21/314 ,  C23C16/34 ,  C23C16/458 ,  C23C16/52 ,  H01L21/318 ,  C23C16/455

CPC分类号： C23C16/34 ,  C23C16/45546 ,  C23C16/4584 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562

摘要： Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a material gas supply system that supplies material gas into the processing chamber; a nitrogen-containing-gas supply system that supplies nitrogen containing gas into the processing chamber; and a controller that controls the material gas supply system, the nitrogen-containing-gas supply system, the carrying mechanism, and the rotating mechanism, after forming a nitride film on the substrate by using the material gas and the nitrogen containing gas, to carry out the substrate supporting member that supports the substrate while being rotated from the processing chamber.

摘要翻译： 公开了一种基板处理装置，其包括：支撑基板的基板支撑部件; 能够容纳基板支撑构件的处理室; 使所述基板支撑部件旋转的旋转机构; 从所述处理室执行所述基板支撑构件的承载机构; 将原料气体供给到处理室内的原料气体供给系统; 含氮气体供给系统，其向所述处理室供给含氮气体; 以及通过使用原料气体和含氮气体在基板上形成氮化膜之后，控制原料气体供给系统，含氮气体供给系统，搬运机构和旋转机构的控制器， 在从处理室旋转的同时支撑基板的基板支撑构件。

公开(公告)号：US20110186984A1

公开(公告)日：2011-08-04

申请号：US13014419

申请日：2011-01-26

申请人： Tatsuyuki SAITO ,  Masanori SAKAI ,  Yukinao KAGA ,  Takashi YOKOGAWA

发明人： Tatsuyuki SAITO ,  Masanori SAKAI ,  Yukinao KAGA ,  Takashi YOKOGAWA

IPC分类号： H01L23/482 ,  H01L21/00 ,  C23C16/455 ,  H01L21/3205

CPC分类号： C23C16/455 ,  C23C16/301 ,  C23C16/303 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/00 ,  H01L21/02186 ,  H01L21/3205 ,  H01L23/482 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. Here, at least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates.

摘要翻译： 本发明提供一种能够形成导电膜的基板处理装置和半导体装置的制造方法，所述半导体装置在较高的成膜速率下能够形成致密的导电膜，其包含低浓度源源杂质并具有低电阻率。 基板处理装置包括：处理室，被配置为堆叠并容纳多个基板; 第一处理气体供应系统，被配置为将第一处理气体供应到所述处理室中; 第二处理气体供应系统，被配置为将第二处理气体供应到所述处理室中; 以及控制单元，被配置为控制第一处理气体供应系统和第二处理气体供应系统。 这里，第一处理气体供给系统和第二处理气体供给系统中的至少一个包括沿基板的堆叠方向垂直配置的两个喷嘴，并且具有不同的形状，并且控制单元被配置为提供至少一个 当通过在具有不同成膜速率的脉冲下将第一处理气体和第二处理气体供应到处理室中时，通过具有不同形状的两个喷嘴将第一处理气体和第二处理气体输送到处理室中， 。

公开(公告)号：US20110183519A1

公开(公告)日：2011-07-28

申请号：US13012320

申请日：2011-01-24

申请人： Yukinao KAGA ,  Tatsuyuki SAITO ,  Masanori SAKAI ,  Takashi YOKOGAWA

发明人： Yukinao KAGA ,  Tatsuyuki SAITO ,  Masanori SAKAI ,  Takashi YOKOGAWA

IPC分类号： H01L21/3205 ,  C23C16/52 ,  C23C16/455

CPC分类号： H01L21/32051 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45574 ,  H01L21/28556 ,  H01L21/28562

摘要： A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method. The method includes steps of: (a) loading a substrate into a processing chamber; (b) forming a predetermined film on the substrate by simultaneously supplying the first processing gas and the second processing gas into the processing chamber; (c) stopping the supply of the first processing gas and the second processing gas and removing the first processing gas and the second processing gas remaining in the processing chamber; (d) modifying the film formed on the substrate by supplying the second processing gas into the processing chamber after the step (c); and (e) unloading the substrate from the processing chamber, wherein, in the step (b), a time period for supplying the second processing gas into the processing chamber is longer than a time period for supplying the first processing gas into the processing chamber.

摘要翻译： 一种制造半导体器件的方法和基板处理设备，其能够提供比通过常规CVD方法形成的TiN膜更高成膜速率的TiN膜，其生产率高于 TiN膜通过ALD法形成。 该方法包括以下步骤：（a）将衬底装载到处理室中; （b）通过同时将第一处理气体和第二处理气体供应到处理室中在基板上形成预定的膜; （c）停止供应第一处理气体和第二处理气体，并除去残留在处理室中的第一处理气体和第二处理气体; （d）在步骤（c）之后，通过将第二处理气体供应到处理室来改变在基板上形成的膜; 以及（e）从所述处理室卸载所述基板，其中在所述步骤（b）中，用于将所述第二处理气体供应到所述处理室中的时间段比用于将所述第一处理气体供应到所述处理室 。

公开(公告)号：US20110031593A1

公开(公告)日：2011-02-10

申请号：US12849398

申请日：2010-08-03

申请人： Tatsuyuki SAITO ,  Masanori SAKAI ,  Yukinao KAGA ,  Takashi Yokogawa

发明人： Tatsuyuki SAITO ,  Masanori SAKAI ,  Yukinao KAGA ,  Takashi Yokogawa

IPC分类号： H01L23/58 ,  H01L21/469 ,  H01L21/443

CPC分类号： H01L21/0228 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/52 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02225 ,  H01L21/02263 ,  H01L21/02271 ,  H01L21/28506

摘要： There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.

摘要翻译： 提供了制造半导体器件，衬底处理设备和半导体器件的方法。 该方法允许快速形成导电膜，其由于其致密的结构而具有从源极渗透的低浓度的杂质和低电阻率。 该方法通过同时将两种或更多种源提供到处理室中以在放置在处理室中的基板上形成膜来执行。 该方法包括：以第一供应流量将至少一种源提供到处理室中来执行第一源供应过程; 以及通过以与第一供给流量不同的第二供给流量将至少一种源提供到处理室来执行第二源供给处理。

公开(公告)号：US20110059600A1

公开(公告)日：2011-03-10

申请号：US12862180

申请日：2010-08-24

申请人： Masanori SAKAI ,  Yukinao KAGA ,  Takashi YOKOGAWA ,  Tatsuyuki SAITO

发明人： Masanori SAKAI ,  Yukinao KAGA ,  Takashi YOKOGAWA ,  Tatsuyuki SAITO

IPC分类号： H01L21/443 ,  B08B5/00

CPC分类号： B08B7/00 ,  C23C16/4404 ,  C23C16/4405 ,  H01L21/28562 ,  H01L21/67028

摘要： It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.

公开(公告)号：US20130293054A1

公开(公告)日：2013-11-07

申请号：US13859470

申请日：2013-04-09

申请人： Tatsuyuki SAITO ,  Ryuichi TAKAKUSAGI ,  Toshiyuki KIMURA ,  Yoshichika KAWASHIMA ,  Kenji SAKATA

发明人： Tatsuyuki SAITO ,  Ryuichi TAKAKUSAGI ,  Toshiyuki KIMURA ,  Yoshichika KAWASHIMA ,  Kenji SAKATA

IPC分类号： H02K3/28 ,  H02K13/10

CPC分类号： H02K3/28 ,  H02K7/1166 ,  H02K13/10 ,  H02K23/04 ,  H02K23/34

摘要： Disclosed is an electric motor including a yoke formed in a bottomed cylindrical shape; permanent magnets arranged on an inner peripheral surface of the yoke; an armature including a rotary shaft journalled on the yoke, an armature core formed with a plurality of teeth and fixed onto the rotary shaft, an armature coil wound around the teeth of the armature core, a commutator having a plurality of segments and being fixed onto the rotary shaft, and a connecting wire connecting two segments arranged to face each other back to back around the rotary shaft, the armature being surrounded by the permanent magnets and accommodated within the yoke; and a first brush, a second brush, and a third brush coming into sliding contact with the segments of the commutator of the armature.

摘要翻译： 公开了一种电动马达，其包括形成为有底圆筒形状的磁轭; 设置在所述轭的内周面上的永磁体; 一个电枢，包括一个轴颈轴颈上的旋转轴，一个形成有多个齿并固定在旋转轴上的电枢铁芯，一个缠绕在电枢铁心上的电枢线圈，一个具有多个段的换向器，并固定在 旋转轴和连接线，其将彼此相对地彼此面对地布置成围绕旋转轴彼此相对地连接，电枢被永磁体包围并容纳在轭内; 以及第一刷子，第二刷子和与衔铁的换向器的段滑动接触的第三刷子。

公开(公告)号：US20130278107A1

公开(公告)日：2013-10-24

申请号：US13859458

申请日：2013-04-09

申请人： Tatsuyuki SAITO ,  Ryuichi TAKAKUSAGI ,  Toshiyuki KIMURA ,  Yoshichika KAWASHIMA ,  Kenji SAKATA

发明人： Tatsuyuki SAITO ,  Ryuichi TAKAKUSAGI ,  Toshiyuki KIMURA ,  Yoshichika KAWASHIMA ,  Kenji SAKATA

IPC分类号： H02K13/10

CPC分类号： H02K3/28 ,  H02K7/1166 ,  H02K13/10 ,  H02K23/04 ,  H02K23/34

摘要： Disclosed is a windshield wiper motor having a reduction mechanism unit and an electric motor. The electric motor of the windshield wiper motor includes a yoke formed in a bottomed cylindrical shape; permanent magnets arranged on an inner peripheral surface of the yoke; an armature including a rotary shaft journalled to the yoke, an armature core where a plurality of teeth are formed and fixed onto the rotary shaft, an armature coil wound around teeth of the armature core, a commutator having a plurality of segments and being fixed onto the rotary shaft, and a plurality of connecting wires connecting two segments arranged to face each other back to back around the rotary shaft, being surrounded by the permanent magnets and arranged within the yoke; and a first brush, a second brush, and a third brush coming into sliding contact with the segments of the commutator of the armature.

摘要翻译： 公开了一种具有减速机构单元和电动机的挡风玻璃刮水器电动机。 挡风玻璃刮水器电动机的电动机包括形成为有底圆筒形的磁轭; 设置在所述轭的内周面上的永磁体; 一个电枢，包括一个旋转轴，该旋转轴安装在磁轭上，一个电枢磁芯，其中多个齿形成并固定在旋转轴上，电枢线圈缠绕在电枢铁芯的齿上，一个换向器具有多个段并固定在 旋转轴和多个连接线，其连接两个彼此相对地相对地彼此相对地相对地布置的旋转轴，所述多个连接线被所述永磁体包围并设置在所述轭内; 以及第一刷子，第二刷子和与衔铁的换向器的段滑动接触的第三刷子。

公开(公告)号：US20080042282A1

公开(公告)日：2008-02-21

申请号：US11872295

申请日：2007-10-15

申请人： Tatsuyuki SAITO ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

发明人： Tatsuyuki SAITO ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/76849 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76889 ,  H01L23/53295 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/13

摘要： A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

摘要翻译： 在半导体衬底上形成的氧化硅膜上形成有用于配线的沟槽的氧化硅膜和氮化硅膜，依次形成阻挡层和铜膜。 此后，从用于布线的槽的外侧除去阻挡层和铜膜，从而形成布线。 钨选择性地或优先地生长在布线上以在布线上选择性地形成钨膜。 铜膜形成后，可以进行氢处理。 在形成布线之后，可以用能够除去异物或污染金属的清洁溶液来清洁半导体衬底。 形成布线后，进行氢的处理。

公开(公告)号：US20130221779A1

公开(公告)日：2013-08-29

申请号：US13859475

申请日：2013-04-09

申请人： Tatsuyuki SAITO ,  Ryuichi TAKAKUSAGI ,  Toshiyuki KIMURA ,  Yoshichika KAWASHIMA ,  Kenji SAKATA

发明人： Tatsuyuki SAITO ,  Ryuichi TAKAKUSAGI ,  Toshiyuki KIMURA ,  Yoshichika KAWASHIMA ,  Kenji SAKATA

IPC分类号： H02K13/10 ,  H02K7/116

CPC分类号： H02K3/28 ,  H02K7/1166 ,  H02K13/10 ,  H02K23/04 ,  H02K23/34

摘要： Disclosed is a motor in which a commutator (10) is provided with connecting wires which short-circuit equipotential segments; brushes (21) are constituted by a low-speed brush (21a), a high-speed brush (21b), and a common brush (21c) used in common by the low-speed and high-speed brushes, and are juxtaposed along the circumferential direction. The circumferential brush width (W2) of the high-speed brush is set to be smaller than the circumferential brush width (W1) of the low-speed brush. The high-speed brush and the low-speed brush are formed so that simultaneous sliding contact with equipotential segments (15) can be avoided. Additionally, armature cores (8) are provided such that a plurality of teeth (12) is point-symmetrical about a rotary shaft (3) at equal intervals in the circumferential direction, and the teeth and slots (13) are formed so as to exist alternately at intervals of 90 degrees in the circumferential direction. By virtue of the above configuration, vibration and noise can be reduced while achieving miniaturization and high performance of a motor.

摘要翻译： 公开了一种电动机，其中换向器（10）设置有短路等电位段的连接线; 刷子（21）由低速和高速刷子共同使用的低速刷子（21a），高速刷子（21b）和普通刷子（21c）构成，并且并排 圆周方向。 高速刷的圆周刷宽度（W2）设定为小于低速刷的周向刷宽（W1）。 形成高速电刷和低速电刷，可以避免与等电位段（15）的同时滑​​动接触。 另外，电枢铁芯（8）设置成使得多个齿（12）在圆周方向上以相等的间隔围绕旋转轴（3）点对称，并且形成齿和槽（13），以便 在圆周方向以90度的间隔交替地存在。 通过上述结构，可以在实现电动机的小型化和高性能的同时降低振动和噪音。