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    ON CHIP SENSOR FOR WAFER OVERLAY MEASUREMENT
    2.
    发明公开
    ON CHIP SENSOR FOR WAFER OVERLAY MEASUREMENT 审中-公开

    公开(公告)号：US20240361703A1

    公开(公告)日：2024-10-31

    申请号：US18769032

    申请日：2024-07-10

    Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

    Inventor： Mohamed SWILLAM ,  Stephen ROUX ,  Tamer Mohamed Tawfik Ahmed Mohamed ELAZHARY ,  Arie Jeffrey DEN BOEF

    IPC: G03F7/00 ,  G02B6/122 ,  G02B26/08

    CPC classification number: G03F7/70633 ,  G02B6/1225 ,  G02B26/0833

    Abstract: A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

    MONOLITHIC PARTICLE INSPECTION DEVICE
    3.
    发明公开
    MONOLITHIC PARTICLE INSPECTION DEVICE 审中-公开

    公开(公告)号：US20230266255A1

    公开(公告)日：2023-08-24

    申请号：US18012801

    申请日：2021-06-09

    Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

    Inventor： Ilse VAN WEPEREN ,  Arjan Johannes Anton BEUKMAN ,  Mohamed SWILLAM ,  Justin Lloyd KREUZER ,  Stephen ROUX

    IPC: G01N21/956

    CPC classification number: G01N21/956 ,  G01N2021/95676

    Abstract: Systems, apparatuses, and methods are provided for detecting a particle on a substrate surface. An example method can include receiving, by a grating structure, coherent radiation from a radiation source. The method can further include generating, by the grating structure, a focused coherent radiation beam based on the coherent radiation. The method can further include transmitting, by the grating structure, the focused coherent radiation beam toward a region of a surface of a substrate. The method can further include receiving, by the grating structure, photons scattered from the region in response to illuminating the region with the focused coherent radiation beam. The method can further include measuring, by a photodetector, the photons received by the grating structure. The method can further include generating, by the photodetector and based on the measured photons, an electronic signal for detecting a particle located in the region of the surface of the substrate.

    METROLOGY MARK STRUCTURE AND METHOD OF DETERMINING METROLOGY MARK STRUCTURE
    4.
    发明申请
    METROLOGY MARK STRUCTURE AND METHOD OF DETERMINING METROLOGY MARK STRUCTURE 有权

    公开(公告)号：US20220350268A1

    公开(公告)日：2022-11-03

    申请号：US17765214

    申请日：2020-09-25

    Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

    Inventor： Tamer Mohamed Tawfik Ahmed Mohamed ELAZHARY ,  Robert John SOCHA ,  Stephen ROUX ,  Simon Reinald HUISMAN

    IPC: G03F9/00 ,  G03F7/20 ,  G01B11/26

    Abstract: A structure of a semiconductor device with a sub-segmented grating structure as a metrology mark and a method for configuring the metrology mark. The method for configuring a metrology mark may be used in a lithography process. The method may include determining an initial characteristic function of an initial metrology mark disposed within a layer stack. The method also includes perturbing one or more variables of the plurality of subsegments of the metrology mark (e.g., pitch, duty cycle, and/or line width of the plurality of subsegments) and further perturbing a thickness of one or more layers within the layer stack. The method further includes iteratively performing the perturbations until a minimized characteristic function of an initial metrology mark is determined to set a configuration for the plurality of subsegments.

    ON CHIP SENSOR FOR WAFER OVERLAY MEASUREMENT
    5.
    发明申请
    ON CHIP SENSOR FOR WAFER OVERLAY MEASUREMENT 有权

    公开(公告)号：US20220283516A1

    公开(公告)日：2022-09-08

    申请号：US17637942

    申请日：2020-08-05

    Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

    Inventor： Mohamed SWILLAM ,  Stephen ROUX ,  Tamer Mohamed Tawfik Ah ELAZHARY ,  Arie Jeffrey DEN BOEF

    IPC: G03F7/20 ,  G02B6/122 ,  G02B26/08

    Abstract: A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

    AN OPTICAL SYSTEM IMPLEMENTED IN A SYSTEM FOR FAST OPTICAL INSPECTION OF TARGETS
    6.
    发明申请
    AN OPTICAL SYSTEM IMPLEMENTED IN A SYSTEM FOR FAST OPTICAL INSPECTION OF TARGETS 有权

    公开(公告)号：US20250060684A1

    公开(公告)日：2025-02-20

    申请号：US18724286

    申请日：2022-12-14

    Applicant: ASML Netherlands B.V.

    Inventor： Simon Reinald HUISMAN ,  Sebastianus Adrianus GOORDEN ,  Stephen ROUX

    IPC: G03F9/00

    Abstract: A system includes optical devices, reflective devices, a movable reflective device, and a detector. The optical devices are disposed at a first plane and around a axis of the system and receive scattered radiation from targets. The reflective devices are disposed at at least a second plane and around the axis. Each of the reflective devices receives the scattered radiation from a corresponding one of the optical devices. The movable reflective device is disposed along the axis and receives the scattered radiation from each of the reflective devices. The detector receives the scattered radiation from the movable reflective device.

    SPECTROMETRIC METROLOGY SYSTEMS BASED ON MULTIMODE INTERFERENCE AND LITHOGRAPHIC APPARATUS
    9.
    发明公开
    SPECTROMETRIC METROLOGY SYSTEMS BASED ON MULTIMODE INTERFERENCE AND LITHOGRAPHIC APPARATUS 审中-公开

    公开(公告)号：US20230273531A1

    公开(公告)日：2023-08-31

    申请号：US18016225

    申请日：2021-06-29

    Applicant: ASML Holding N.V.

    Inventor： Mohamed SWILLAM ,  Justin Lloyd KREUZER ,  Stephen ROUX

    IPC: G03F7/00 ,  G03F7/20

    CPC classification number: G03F7/706845 ,  G03F7/706849 ,  G03F7/706851 ,  G03F7/70233

    Abstract: A metrology system comprises a radiation source, an optical element, first and second detectors, an integrated optical device comprising a multimode waveguide, and a processor. The radiation source generates radiation. The optical element directs radiation toward a target to generate scattered radiation from the target. The first detector receives a first portion of the scattered radiation and generates a first detection signal based on the received first portion. The multimode waveguide interferes a second portion of the scattered radiation using modes of the multimode waveguide. The second detector receives the interfered second portion and generates a second detection signal based on the received interfered second portion. The processor receives the first and second detection signals. The processor analyzes the received first portion, the received interfered second portion, and a propagation property of the multimode waveguide. The processor determines the property of the target based on the analysis.

    SYSTEMS AND METHODS FOR MEASURING INTENSITY IN A LITHOGRAPHIC ALIGNMENT APPARATUS
    10.
    发明公开
    SYSTEMS AND METHODS FOR MEASURING INTENSITY IN A LITHOGRAPHIC ALIGNMENT APPARATUS 审中-公开

    公开(公告)号：US20240077308A1

    公开(公告)日：2024-03-07

    申请号：US18260817

    申请日：2022-01-04

    Applicant: ASML Holding N.V.

    Inventor： Mohamed SWILLAM ,  Justin Lloyd KREUZER ,  Stephen ROUX ,  Michael Leo NELSON ,  Muhsin ERALP

    IPC: G01B11/27 ,  G03F7/20

    CPC classification number: G01B11/272 ,  G03F7/20

    Abstract: A metrology system includes a radiation source, an adjustable diffractive element, an optical system, an optical element, and a processor. The radiation source generates radiation. The adjustable diffractive element diffracts the radiation to generate first and second beams of radiation. The first and second beams have first and second different non-zero diffraction orders, respectively. The optical system directs the first and second beams toward a target structure such that first and second scattered beams of radiation are generated based on the first and second beams, respectively. The metrology system adjusts a phase difference of the first and second scattered beams. The optical element interferes the first and second scattered beams at an imaging detector that generates a detection signal. The processor receives and analyzes the detection signal to determine a property of the target structure based on the adjusted phase difference.

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