公开(公告)号：US06517894B1

公开(公告)日：2003-02-11

申请号：US09674179

申请日：2000-10-27

申请人： Akihisa Hongo ,  Mizuki Nagai ,  Kanji Ohno ,  Ryoichi Kimizuka ,  Megumi Maruyama

发明人： Akihisa Hongo ,  Mizuki Nagai ,  Kanji Ohno ,  Ryoichi Kimizuka ,  Megumi Maruyama

IPC分类号： B05D512

CPC分类号： H01L21/76843 ,  C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H05K3/423 ,  H05K2201/09563 ,  H05K2203/1476

摘要： A method and apparatus for plating a substrate is provided, wherein fine pits formed in the substrate, such as fine channels for wiring, are filled with a copper, copper alloy, or other material with low electrical resistance. The method is performed on a wafer W having fine pits (10) to fill the fine pits with a metal (13) and includes performing a first plating process (11) by immersing the wafer in a first plating solution having a composition superior in throwing power; and performing a second plating process (12) by immersing the substrate in a second plating solution having a composition superior in leveling ability.

摘要翻译： 提供了一种用于电镀基板的方法和装置，其中在基板中形成的细凹坑，例如用于布线的精细通道，用铜，铜合金或其他具有低电阻的材料填充。 该方法在具有细凹坑（10）的晶片W上进行，以用金属（13）填充细凹坑，并且包括通过将晶片浸入具有优异投掷成分的第一电镀液中来进行第一电镀工艺（11） 功率; 以及通过将基板浸入具有优良平整性能的组成的第二电镀溶液中来进行第二电镀工艺（12）。

公开(公告)号：US06908534B2

公开(公告)日：2005-06-21

申请号：US10017384

申请日：2001-12-18

申请人： Akihisa Hongo ,  Mizuki Nagai ,  Kanji Ohno ,  Ryoichi Kimizuka ,  Megumi Maruyama

发明人： Akihisa Hongo ,  Mizuki Nagai ,  Kanji Ohno ,  Ryoichi Kimizuka ,  Megumi Maruyama

IPC分类号： C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  H05K3/42 ,  C25D17/00 ,  B05C3/00 ,  B05C19/02

CPC分类号： H01L21/76843 ,  C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H05K3/423 ,  H05K2201/09563 ,  H05K2203/1476

摘要： A method and apparatus for plating a substrate is provided, wherein fine pits formed in the substrate, such as fine channels for wiring, are filled with a copper, copper alloy, or other material with low electrical resistance. The method is performed on a wafer W having fine pits (10) to fill the fine pits with a metal (13) and includes performing a first plating process (11) by immersing the wafer in a first plating solution having a composition superior in throwing power; and performing a second plating process (12) by immersing the substrate in a second plating solution having a composition superior in leveling ability.

公开(公告)号：US20050098439A1

公开(公告)日：2005-05-12

申请号：US11008098

申请日：2004-12-10

申请人： Akihisa Hongo ,  Mizuki Nagai ,  Kanji Ohno ,  Ryoichi Kimizuka ,  Megumi Maruyama

发明人： Akihisa Hongo ,  Mizuki Nagai ,  Kanji Ohno ,  Ryoichi Kimizuka ,  Megumi Maruyama

IPC分类号： C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  H05K3/42 ,  C25D17/00

CPC分类号： H01L21/76843 ,  C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H05K3/423 ,  H05K2201/09563 ,  H05K2203/1476

摘要： A method and apparatus for plating a substrate is provided, wherein fine pits formed in the substrate, such as fine channels for wiring, are filled with a copper, copper alloy, or other material with low electrical resistance. The method is performed on a wafer W having fine pits (10) to fill the fine pits with a metal (13) and includes performing a first plating process (11) by immersing the wafer in a first plating solution having a composition superior in throwing power; and performing a second plating process (12) by immersing the substrate in a second plating solution having a composition superior in leveling ability.

摘要翻译： 提供了一种用于电镀基板的方法和装置，其中在基板中形成的细凹坑，例如用于布线的精细通道，用铜，铜合金或其他具有低电阻的材料填充。 该方法在具有细凹坑（10）的晶片W上进行，以用金属（13）填充细凹坑，并且包括通过将晶片浸入具有优异投掷成分的第一电镀液中来进行第一电镀工艺（11） 功率; 以及通过将基板浸入具有优良平整性能的组成的第二电镀溶液中来进行第二电镀工艺（12）。

公开(公告)号：US07033463B1

公开(公告)日：2006-04-25

申请号：US09762582

申请日：1999-08-11

申请人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroaki Inoue ,  Satoshi Sendai ,  Tetsuma Ikegami ,  Koji Mishima ,  Shuichi Okuyama ,  Mizuki Nagai ,  Ryoichi Kimizuka ,  Megumi Maruyama

发明人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroaki Inoue ,  Satoshi Sendai ,  Tetsuma Ikegami ,  Koji Mishima ,  Shuichi Okuyama ,  Mizuki Nagai ,  Ryoichi Kimizuka ,  Megumi Maruyama

IPC分类号： C25D17/00

CPC分类号： H01L21/76843 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/1682 ,  C23C18/38 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/107 ,  H05K3/241 ,  H05K3/423

摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

摘要翻译： 一种方法和装置，通过有效地填充形成在半导体衬底中的精细凹槽，镀覆金属而没有空隙或污染，从而形成衬底以形成布线。 用电镀金属填充形成在半导体衬底中的布线凹槽的衬底的电镀包括在衬底上进行形成初始层的无电镀处理，并且进行用电镀金属填充布线凹槽的电解电镀工艺，同时 初始层用作供料层。

公开(公告)号：US20060144714A1

公开(公告)日：2006-07-06

申请号：US11360685

申请日：2006-02-24

申请人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroaki Inous ,  Satoshi Sendai ,  Tetsuma Ikegami ,  Koji Mishima ,  Shuichi Okuyama ,  Mizuki Nagai ,  Ryoichi Kimizuka ,  Megumi Maruyama

发明人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroaki Inous ,  Satoshi Sendai ,  Tetsuma Ikegami ,  Koji Mishima ,  Shuichi Okuyama ,  Mizuki Nagai ,  Ryoichi Kimizuka ,  Megumi Maruyama

IPC分类号： C25D3/38

CPC分类号： H01L21/76843 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/1682 ,  C23C18/38 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/107 ,  H05K3/241 ,  H05K3/423

摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

公开(公告)号：US20070102285A1

公开(公告)日：2007-05-10

申请号：US11643771

申请日：2006-12-22

申请人： Yasushi Isayama ,  Hiroyuki Ueyama ,  Hiroyuki Kaneko ,  Junitsu Yamakawa ,  Akihisa Hongo ,  Ryoichi Kimizuka ,  Megumi Maruyama

发明人： Yasushi Isayama ,  Hiroyuki Ueyama ,  Hiroyuki Kaneko ,  Junitsu Yamakawa ,  Akihisa Hongo ,  Ryoichi Kimizuka ,  Megumi Maruyama

IPC分类号： C25B15/00

CPC分类号： C25D21/18 ,  C25D21/12 ,  C25D21/14

摘要： The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

摘要翻译： 基于在半导体衬底等的表面中限定的互连沟槽和孔中的用于填充铜等金属的电镀装置所使用的电镀液中的矫顽剂的浓度基于 根据CV或CVS工艺测量电镀液的剥离区域。

公开(公告)号：US07172683B2

公开(公告)日：2007-02-06

申请号：US10627684

申请日：2003-07-28

申请人： Yasushi Isayama ,  Hiroyuki Ueyama ,  Hiroyuki Kaneko ,  Junitsu Yamakawa ,  Akihisa Hongo ,  Ryoichi Kimizuka ,  Megumi Maruyama

发明人： Yasushi Isayama ,  Hiroyuki Ueyama ,  Hiroyuki Kaneko ,  Junitsu Yamakawa ,  Akihisa Hongo ,  Ryoichi Kimizuka ,  Megumi Maruyama

IPC分类号： C25D21/14 ,  C25D7/12

CPC分类号： C25D21/18 ,  C25D21/12 ,  C25D21/14

摘要： The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

摘要翻译： 基于在半导体衬底等的表面中限定的互连沟槽和孔中的用于填充铜等金属的电镀装置所使用的电镀液中的矫顽剂的浓度基于 根据CV或CVS工艺测量电镀液的剥离区域。

公开(公告)号：US06627066B1

公开(公告)日：2003-09-30

申请号：US09830407

申请日：2001-04-27

申请人： Yasushi Isayama ,  Hiroyuki Ueyama ,  Hiroyuki Kaneko ,  Junitsu Yamakawa ,  Akihisa Hongo ,  Ryoichi Kimizuka ,  Megumi Maruyama

发明人： Yasushi Isayama ,  Hiroyuki Ueyama ,  Hiroyuki Kaneko ,  Junitsu Yamakawa ,  Akihisa Hongo ,  Ryoichi Kimizuka ,  Megumi Maruyama

IPC分类号： G01N2742

CPC分类号： C25D21/18 ,  C25D21/12 ,  C25D21/14

摘要： The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

摘要翻译： 基于在半导体衬底等的表面中限定的互连沟槽和孔中的用于填充铜等金属的电镀装置所使用的电镀液中的矫顽剂的浓度基于 根据CV或CVS工艺测量电镀液的剥离区域。

公开(公告)号：US06811658B2

公开(公告)日：2004-11-02

申请号：US09891472

申请日：2001-06-27

申请人： Akihisa Hongo ,  Naoki Matsuda ,  Kanji Ohno ,  Ryoichi Kimizuka

发明人： Akihisa Hongo ,  Naoki Matsuda ,  Kanji Ohno ,  Ryoichi Kimizuka

IPC分类号： C25D1700

CPC分类号： H01L21/76843 ,  C25F3/02 ,  C25F7/00 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H05K3/07 ,  H05K3/107 ,  H05K3/108 ,  H05K2201/0376 ,  H05K2201/09036

摘要： A method and apparatus for forming interconnects embedding a metal such as copper (Cu) into recesses for interconnects formed on the surface of a substrate such as a semiconductor substrate. The method includes providing a substrate having fine recesses formed in the surface, subjecting the surface of the substrate to plating in a plating liquid, and subjecting the plated film formed on the surface of the substrate to electrolytic etching in an etching liquid.

摘要翻译： 一种将诸如铜（Cu）的金属嵌入到诸如半导体衬底的衬底的表面上形成的互连的凹槽中的互连的方法和装置。 该方法包括提供在该表面上形成有微细凹槽的基板，使基板的表面在电镀液中进行镀覆，以及使形成在基板表面上的镀膜在蚀刻液中进行电解蚀刻。

公开(公告)号：US06793794B2

公开(公告)日：2004-09-21

申请号：US10098415

申请日：2002-03-18

申请人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroyuki Ueyama ,  Junitsu Yamakawa ,  Mizuki Nagai ,  Kenichi Suzuki ,  Atsushi Chono ,  Satoshi Sendai ,  Koji Mishima

发明人： Akihisa Hongo ,  Naoaki Ogure ,  Hiroyuki Ueyama ,  Junitsu Yamakawa ,  Mizuki Nagai ,  Kenichi Suzuki ,  Atsushi Chono ,  Satoshi Sendai ,  Koji Mishima

IPC分类号： C25D500

CPC分类号： C25D21/14 ,  C25D7/12 ,  C25D17/001

摘要： The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath. The substrate plating apparatus can also comprise an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath, wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.

摘要翻译： 本发明涉及一种用于在含有电镀液的电镀液中电镀基板的基板电镀装置。 不同的阳极设置在与基底相对的电镀槽中。 基板电镀装置包括与电镀槽分开设置的循环容器或虚拟容器，其中可溶性阳极和阴极设置在循环容器或假容器中。 阴极交换膜或选择性阳离子交换膜设置在阳极和阴极之间，并隔离其中，其中通过在可溶性阳极和阴极之间流动电流而在循环容器或虚拟容器中产生金属离子，并且所产生的金属离子 被供应到电镀浴。 基板电镀装置还可以包括设置在电镀槽中的基板和阳极之间的离子交换膜或中性多孔隔膜，其中离子交换膜或中性多孔隔膜将电镀槽分成衬底区域和阳极区域。