公开(公告)号：US20100000673A1

公开(公告)日：2010-01-07

申请号：US12376073

申请日：2007-07-31

申请人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Kuokou Suu

发明人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Kuokou Suu

IPC分类号： B32B38/00 ,  B05D5/12 ,  C23C16/44

CPC分类号： H01L21/31691 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/787 ,  C23C16/02 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02271 ,  H01L28/55 ,  H01L28/65

摘要： A film forming method in which a crystalline film having PZT (111) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: forming an oxide film whose interplanar spacing is closer to the PZT (111) than to the noble metal, on a surface of the foundation film; and forming the crystalline film on the surface of the foundation film by an MOCVD method.

摘要翻译： 将具有PZT（111）作为其主要成分的结晶膜层压在具有（111）取向的贵金属作为其主要成分的基础膜上的成膜方法，该方法包括以下步骤：形成氧化膜 其基底膜的表面上的平面间距比贵金属更接近PZT（111）; 并通过MOCVD法在基膜的表面上形成结晶膜。

公开(公告)号：US20090311417A1

公开(公告)日：2009-12-17

申请号：US12376038

申请日：2007-07-31

申请人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Koukou Suu

发明人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Koukou Suu

IPC分类号： C23C16/18

CPC分类号： H01L21/31691 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/787 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02271 ,  H01L28/55 ,  H01L28/65 ,  H01L41/1876 ,  H01L41/316

摘要： A film forming method in which crystalline film having PZT (001) or PZT (100) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: performing reduction treatment on a surface of the foundation film; and forming the crystalline film by an MOCVD method on the surface of the foundation film.

摘要翻译： 将具有PZT（001）或PZT（100）作为其主要成分的结晶膜层叠在具有（111）取向的贵金属作为其主要成分的基础膜上的成膜方法，该方法包括以下步骤： 在基膜的表面进行还原处理; 并通过MOCVD法在基膜的表面上形成结晶膜。

公开(公告)号：US08262798B2

公开(公告)日：2012-09-11

申请号：US10911639

申请日：2004-08-05

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4557 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.

摘要翻译： 本发明提供了一种喷淋头，其温度可以根据所选择的成膜条件进行控制，薄膜制造装置允许稳定且连续地形成仅包含微量颗粒的薄膜，同时再现良好的 膜厚分布和组成分布，成膜率高，生产性和批量生产能力优异的方法以及制备这种膜的方法。 淋浴头被设计成将喷头结构结合到成膜容器的上盖中，将热交换装置设置在上盖中，从而控制上盖的温度，并且进而允许 考虑到所选择的成膜条件，可以在构成淋浴头表面的盘形淋浴板和上盖之间的接触表面处发生热交换，并且可以控制喷淋头的温度。 薄膜制造装置在其成膜容器中配备有喷头，并且使用该装置制备薄膜。

公开(公告)号：US20050059246A1

公开(公告)日：2005-03-17

申请号：US10910807

申请日：2004-08-04

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhaust path along the deposition-inhibitory plate and that a lower space is formed on the secondary side of the gas-exhaust path.

摘要翻译： 本发明提供一种薄膜制造装置和薄膜制造方法，其制造能力和生产率优异，能够长时间稳定且连续地生产薄膜，同时再生良好的薄膜 厚度分布，良好的组成分布和高成膜速率，并且将成膜期间产生的颗粒数控制到更低的水平。 该装置是用作CVD装置的装置，其中成膜气体通过喷淋头从用作反应空间的室的上部引入反应室，并且在加热的基板上形成膜，其中 该设备被设计成使得上反应空间由没有任何旋转运动或没有任何升高运动的基板支撑台，淋浴喷头和防沉积板构成，基板支撑台和 沉积抑制板被布置成在它们之间形成用作气体排出路径的同心间隙或间隙，惰性气体可以沿着沉积抑制板从气体排出路径的上部流动， 在排气路径的次级侧形成较低的空间。

公开(公告)号：US20050056217A1

公开(公告)日：2005-03-17

申请号：US10911639

申请日：2004-08-05

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： H01L21/20 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.

摘要翻译： 本发明提供了一种喷淋头，其温度可以根据所选择的成膜条件进行控制，薄膜制造装置允许稳定且连续地形成仅包含微量颗粒的薄膜，同时再现良好的 膜厚分布和组成分布，成膜率高，生产性和批量生产能力优异的方法以及制备这种膜的方法。 淋浴头被设计成将喷头结构结合到成膜容器的上盖中，将热交换装置设置在上盖中，从而控制上盖的温度，并且进而允许 考虑到所选择的成膜条件，可以在构成淋浴头表面的盘形淋浴板和上盖之间的接触表面处发生热交换，并且可以控制喷淋头的温度。 薄膜制造装置在其成膜容器中配备有喷头，并且使用该装置制备薄膜。

公开(公告)号：US07618493B2

公开(公告)日：2009-11-17

申请号：US10910807

申请日：2004-08-04

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/00 ,  C23C16/455

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhaust path along the deposition-inhibitory plate and that a lower space is formed on the secondary side of the gas-exhaust path.

摘要翻译： 本发明提供一种薄膜制造装置和薄膜制造方法，其制造能力和生产率优异，能够长时间稳定且连续地生产薄膜，同时再生良好的薄膜 厚度分布，良好的组成分布和高成膜速率，并且将成膜期间产生的颗粒数控制到更低的水平。 该装置是用作CVD装置的装置，其中成膜气体通过喷淋头从用作反应空间的室的上部引入反应室，并且在加热的基板上形成膜，其中 该设备被设计成使得上反应空间由没有任何旋转运动或没有任何升高运动的基板支撑台，淋浴喷头和防沉积板构成，基板支撑台和 沉积抑制板被布置成在它们之间形成用作气体排出路径的同心间隙或间隙，惰性气体可以沿着沉积抑制板从气体排出路径的上部流动， 在排气路径的次级侧形成较低的空间。

公开(公告)号：US20070054472A1

公开(公告)日：2007-03-08

申请号：US10569470

申请日：2004-08-25

申请人： Yutaka Nishioka ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Takeshi Masuda ,  Masaki Uematsu ,  Koukou Suu

发明人： Yutaka Nishioka ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Takeshi Masuda ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/00 ,  H01L21/20

CPC分类号： H01L21/02271 ,  C23C16/409 ,  C23C16/4482 ,  C23C16/452 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02197 ,  H01L21/3165

摘要： An oxide thin film having good characteristic properties is prepared by reducing an occurrence of an oxygen defect of the resulting oxide thin film and promoting the epitaxial growth of the film. The oxide thin film is prepared by admixing a raw gas, a carrier gas and an oxidation gas and supplying the resulting gas mixture on a heated substrate placed in a reaction chamber from a shower plate through a gas activating means which is maintained, by a heating means, at such a temperature that any liquefaction, deposition and film-formation of a raw material are never caused, to thus make the oxidation gas react with one another and to prepare the oxide thin film on the substrate. In this case, a rate of the oxidation gas flow rate is not less than 60% on the basis of the gas mixture. Furthermore, a flow rate of oxidation gas used for forming an initial layer by nucleation is less than 60%, and a flow rate of oxidation gas used in a subsequent film-forming process for forming a second layer is not less than 60%. Furthermore, in an apparatus for preparing the oxide thin film, a heating means is arranged between a gas-mixing unit and a shower plate.

摘要翻译： 通过减少所得氧化物薄膜的氧缺陷的发生并促进膜的外延生长，制备具有良好特性的氧化物薄膜。 氧化物薄膜是通过混合原料气体，载气和氧化气体制备的，并将得到的气体混合物通过气体激活装置从放置在喷淋板的反应室中的加热基材上提供，气体活化装置通过加热 意味着在不会引起原料的任何液化，沉积和成膜的温度下，从而使氧化气体彼此反应并在基底上制备氧化物薄膜。 在这种情况下，基于气体混合物，氧化气体流量的比率不小于60％。 此外，用于通过成核形成初始层的氧化气体的流量小于60％，并且在随后的用于形成第二层的成膜工艺中使用的氧化气体的流量不小于60％。 此外，在用于制备氧化物薄膜的装置中，在气体混合单元和淋浴板之间设置加热装置。

公开(公告)号：US20100314599A1

公开(公告)日：2010-12-16

申请号：US12742602

申请日：2008-11-13

申请人： Shin Kikuchi ,  Yutaka Nishioka ,  Isao Kimura ,  Takehito Jimbo ,  Koukou Suu

发明人： Shin Kikuchi ,  Yutaka Nishioka ,  Isao Kimura ,  Takehito Jimbo ,  Koukou Suu

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： C23C14/046 ,  C23C14/0623 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1683

摘要： A chalcogenide film of the invention is formed by a sputtering within a contact hole formed in an insulating layer on a substrate, and is made of a chalcogen compound including a melting-point lowering material that lowers a melting point.

摘要翻译： 本发明的硫族化物膜是通过在形成于基板上的绝缘层中的接触孔内的溅射形成的，并且由包含降低熔点的熔点降低材料的硫属化合物构成。

公开(公告)号：US20090294280A1

公开(公告)日：2009-12-03

申请号：US12522356

申请日：2007-12-20

申请人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

发明人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： C23C14/34

CPC分类号： C23C14/568 ,  C23C14/025 ,  C23C14/042 ,  C23C14/088 ,  C23C14/352 ,  C23C28/322 ,  C23C28/3455 ,  H01G4/1227 ,  H01G4/1245 ,  H01G4/33 ,  H01G7/06 ,  H01L21/02197 ,  H01L21/31691 ,  H01L41/316

摘要： A multilayer film formation method enables the formation of a multilayer including a complex oxide layer and having the desired shape of an element without performing an etching process. The method positions a first mask (30A) above a substrate (S), forms an adhesion layer (36) and a lower electrode layer (37) on the substrate with the first mask by sputtering an adhesion layer target (T1) and a lower electrode layer target (T2), positions a second mask (30B) formed from a ceramic material above the lower electrode layer, superimposes a complex oxide layer (38) on the lower electrode layer with the second mask by sputtering an oxide layer target (T3), positions a third mask (30C) above the complex oxide layer, and superimposes an upper electrode layer (39) on the complex oxide layer with the third mask by sputtering an upper electrode layer target (T4).

摘要翻译： 多层膜形成方法能够形成包括复合氧化物层并且具有所需形状的元件的多层而不进行蚀刻工艺。 该方法将第一掩模（30A）定位在衬底（S）上方，通过溅射粘附层靶（T1）和下层（T1），在第一掩模上在衬底上形成粘合层（36）和下电极层（37） 将由陶瓷材料形成的第二掩模（30B）定位在下部电极层的上方，通过溅射氧化物层靶（T3）将复合氧化物层（38）与第二掩模重叠在下部电极层上 ），在复合氧化物层上方设置第三掩模（30C），并通过溅射上电极层靶（T4）将上电极层（39）与第三掩模叠加在复合氧化物层上。

公开(公告)号：US20100038234A1

公开(公告)日：2010-02-18

申请号：US12519712

申请日：2007-12-17

申请人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

发明人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： C23C14/34 ,  C23C14/06

CPC分类号： H01L41/083 ,  C23C14/0036 ,  C23C14/088 ,  H01L41/1876 ,  H01L41/316

摘要： A multilayer thin film formation method and a multilayer thin film formation apparatus that improve dielectric characteristics and piezoelectric characteristics of a thin film formed from a lead-based perovskite complex oxide. The multilayer thin film formation method includes formation of a lower electrode layer (32b) containing a noble metal above a substrate (S) by sputtering a lower electrode layer target (TG2), and superposing a lead-based complex oxide layer (33) on the lower electrode layer (32b) by sputtering an oxide layer target (TG3) containing lead. The lower electrode layer (32b) has a thickness restricted to 10 to 30 nm, and the lead-based complex oxide layer (33) has a thickness restricted to 0.2 and 5.0 μm.

摘要翻译： 一种提高由铅系钙钛矿复合氧化物形成的薄膜的介电特性和压电特性的多层薄膜形成方法和多层薄膜形成装置。 多层薄膜形成方法包括通过溅射下电极层靶（TG2），在基底（S）上方形成含有贵金属的下电极层（32b），并将引线基复合氧化物层（33）叠加在 通过溅射含有铅的氧化物层靶（TG3）来形成下电极层（32b）。 下部电极层（32b）的厚度为10〜30nm，铅系复合氧化物层（33）的厚度为0.2〜5.0μm。