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    Thin semiconductor device and operation method of thin semiconductor device
    2.
    发明授权
    Thin semiconductor device and operation method of thin semiconductor device 有权
    薄型半导体器件及薄型半导体器件的操作方法

    公开(公告)号：US09030298B2

    公开(公告)日：2015-05-12

    申请号：US13424737

    申请日：2012-03-20

    申请人： Shunpei Yamazaki ,  Takeshi Osada ,  Yasuyuki Arai ,  Yuko Tachimura

    发明人： Shunpei Yamazaki ,  Takeshi Osada ,  Yasuyuki Arai ,  Yuko Tachimura

    IPC分类号： G06K9/00 ,  H01L23/66 ,  G06K19/07 ,  G06K7/00 ,  G06K19/077

    CPC分类号： G06K19/072 ,  G06K7/0008 ,  G06K19/0723 ,  G06K19/07718 ,  G06K19/07749

    摘要： The present invention provides a thin semiconductor device in which its security such as prevention of counterfeit or information leakage is to be enhanced. One feature of the present invention is a thin semiconductor device in which a plurality of thin film integrated circuits are mounted and in which at least one integrated circuit is different from the other integrated circuits in any one of a specification, layout, frequency for transmission or reception, a memory, a communication means, a communication rule and the like. According to the present invention, a thin semiconductor device tag having the plurality of thin film integrated circuits communicates with a reader/writer and at least one of the thin film integrated circuits receives a signal to write information in a memory, and the information written in the memory determines which of the thin film integrated circuits communicates.

    摘要翻译： 本发明提供一种薄型半导体器件，其中要防止伪造或信息泄漏的安全性得到提高。 本发明的一个特征是薄型半导体器件，其中安装了多个薄膜集成电路，并且其中至少一个集成电路与其他集成电路不同，其中任何一个规格，布局，传输频率或 接收，存储器，通信装置，通信规则等。 根据本发明，具有多个薄膜集成电路的薄的半导体器件标签与读取器/写入器通信，并且至少一个薄膜集成电路接收将信息写入存储器的信号，并且写入的信息 存储器确定薄膜集成电路中的哪一个通信。

    Semiconductor device and method for manufacturing the same
    3.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08896049B2

    公开(公告)日：2014-11-25

    申请号：US12751300

    申请日：2010-03-31

    申请人： Atsuo Isobe ,  Tamae Takano ,  Yasuyuki Arai ,  Fumiko Terasawa

    发明人： Atsuo Isobe ,  Tamae Takano ,  Yasuyuki Arai ,  Fumiko Terasawa

    IPC分类号： H01L29/788 ,  H01L27/115 ,  H01L21/84 ,  H01L27/12 ,  H01L29/76

    CPC分类号： H01L27/12 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.

    摘要翻译： 本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

    Method for manufacturing semiconductor device
    4.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08659014B2

    公开(公告)日：2014-02-25

    申请号：US13174980

    申请日：2011-07-01

    申请人： Tatsuya Honda ,  Yasuyuki Arai

    发明人： Tatsuya Honda ,  Yasuyuki Arai

    IPC分类号： H01L29/10 ,  H01L29/12

    CPC分类号： H01L27/1225 ,  H01L27/3244 ,  H01L29/7869 ,  Y10T428/12917

    摘要： An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost. A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film.

    摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，其中可以减少光刻步骤的数量，可以简化制造工艺，并且可以以低成本高成品率地进行制造。 一种制造半导体器件的方法包括以下步骤：形成半导体膜; 通过使激光束通过包括用于屏蔽激光束的屏蔽的光掩模来照射激光束; 通过在半导体膜中的光掩模中未形成屏蔽的区域激光照射激光束的区域; 形成岛状半导体膜，使得由于其是在光掩模中形成屏蔽的区域而不被激光束照射的区域不升华; 形成作为源极电极和漏极电极之一的第一电极和作为源极电极和漏极电极中的另一个的第二电极; 形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

    High contrast light emitting device and method for manufacturing the same
    6.
    发明授权
    High contrast light emitting device and method for manufacturing the same 有权
    高对比度发光装置及其制造方法

    公开(公告)号：US08633473B2

    公开(公告)日：2014-01-21

    申请号：US11318783

    申请日：2005-12-27

    申请人： Takeshi Noda ,  Masayuki Sakakura ,  Yasuyuki Arai ,  Yuko Tachimura

    发明人： Takeshi Noda ,  Masayuki Sakakura ,  Yasuyuki Arai ,  Yuko Tachimura

    IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

    CPC分类号： H01L33/58 ,  H01L27/322 ,  H01L27/3244 ,  H01L33/44 ,  H01L33/60 ,  H01L51/5281 ,  H01L2251/558

    摘要： It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter.A light-emitting device according to the present invention has a feature of having a structure for reducing reflection of light from a light-emitting later at a reflective electrode, and further, has a feature of absorbing wavelengths other than the light by a color filter to enhance the contrast. Accordingly, contrast control can be performed in consideration of only a luminescence component from the light-emitting layer, and is thus made simpler.

    摘要翻译： 本发明的目的是提供一种不使用偏光板的高对比度发光装置。 特别地，本发明的目的是为具有滤色器的发光装置对对比度控制更简单。 根据本发明的发光器件具有的特征在于具有减少来自反射电极的稍后发光的光的反射的结构，并且还具有通过滤色器吸收除了光之外的波长的特征 以增强对比度。 因此，可以仅考虑来自发光层的发光成分来进行对比度控制，从而变得更简单。

    Semiconductor device and manufacturing method thereof
    7.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08624248B2

    公开(公告)日：2014-01-07

    申请号：US13169224

    申请日：2011-06-27

    申请人： Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

    发明人： Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

    IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

    CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L21/32136 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L2029/7863

    摘要： By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

    摘要翻译： 通过根据电路所要求的功能，在半导体器件的各种电路中设置适当的TFT结构，可以提高半导体器件的工作性能和可靠性，降低功耗并降低制造成本 并通过减少处理步骤的数量来提高产量。 TFT的LDD区域形成为具有用于控制导电性的杂质元素的浓度梯度，该杂质元素随着与漏极区的距离减小而变高。 为了形成具有杂质元素的浓度梯度的这样的LDD区域，本发明使用了具有锥形部的栅电极的方法，从而掺杂电离杂质元素，以控制在电场中加速的电导率，从而 其穿过栅电极和栅绝缘膜进入半导体层。

    Semiconductor memory device
    9.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US08575604B2

    公开(公告)日：2013-11-05

    申请号：US13293260

    申请日：2011-11-10

    申请人： Yasuyuki Arai

    发明人： Yasuyuki Arai

    IPC分类号： H01L27/105 ,  H01L21/16

    CPC分类号： H01L27/1156 ,  G11C11/403 ,  G11C16/0433 ,  H01L27/1225

    摘要： An object is to provide a semiconductor memory device which can be miniaturized and also secures a sufficient margin for the refresh period. A memory cell includes a reading transistor, a writing transistor, and a capacitor. In the above structure, the capacitor controls a potential applied to a gate of the reading transistor. The writing transistor controls writing and erasing of data and, when the transistor is off, has small current so that loss of electric charges stored in the capacitor, which is due to leakage current of the writing transistor, can be prevented. A semiconductor layer included in the writing transistor is provided so as to extend from the gate electrode toward a source region of the reading transistor. The capacitor is provided to overlap with the gate electrode of the reading transistor.

    摘要翻译： 本发明的目的是提供一种半导体存储器件，其可以被小型化并且还保证了刷新周期的足够余量。 存储单元包括读取晶体管，写入晶体管和电容器。 在上述结构中，电容器控制施加到读取晶体管的栅极的电位。 写入晶体管控制数据的写入和擦除，并且当晶体管截止时，具有小的电流，从而可以防止由于写入晶体管的漏电流而导致存储在电容器中的电荷损失。 包括在写入晶体管中的半导体层被设置为从栅极延伸到读取晶体管的源极区域。 提供电容器以与读取晶体管的栅电极重叠。

    Display device and method of fabricating the same
    10.
    发明授权
    Display device and method of fabricating the same 失效
    显示装置及其制造方法

    公开(公告)号：US08547516B2

    公开(公告)日：2013-10-01

    申请号：US13224395

    申请日：2011-09-02

    申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Setsuo Nakajima ,  Yasuyuki Arai

    发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Setsuo Nakajima ,  Yasuyuki Arai

    IPC分类号： G02F1/1345

    CPC分类号： G02F1/13452 ,  G02F1/1303 ,  G02F1/133305 ,  G02F1/1345 ,  G02F1/13454 ,  H01L21/67132 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01079

    摘要： A driver circuit for use with a passive matrix or active matrix electro-optical display device such as a liquid crystal display is fabricated to occupy a reduced area. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. The driver circuit can be formed on a large-area substrate such as a glass substrate, while the display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate.

    摘要翻译： 制造用于诸如液晶显示器的无源矩阵或有源矩阵电光显示装置的驱动电路以占据减小的面积。 使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路（棒状晶体）作为驱动电路。 电路接合到显示装置的一个基板，然后电路的端子与显示装置的端子连接。 随后，驱动电路的基板被去除。 驱动电路可以形成在诸如玻璃基板的大面积基板上，而显示装置可以形成在具有高抗震性的轻质材料如塑料基板上。