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384 条记录 (耗时 0.023 秒)

    Non-uniformly nitrided gate oxide and method
    1.
    发明授权
    Non-uniformly nitrided gate oxide and method 失效
    非均匀氮化栅氧化物和方法

    公开(公告)号：US5808348A

    公开(公告)日：1998-09-15

    申请号：US884032

    申请日：1997-06-27

    申请人： Akira Ito ,  John T. Gasner

    发明人： Akira Ito ,  John T. Gasner

    IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/51 ,  H01L29/76

    CPC分类号： H01L21/28211 ,  H01L21/28176 ,  H01L29/518 ,  H01L29/66575 ,  Y10S148/043 ,  Y10S148/044 ,  Y10S148/112 ,  Y10S148/114 ,  Y10S438/954

    摘要： A semiconductor device which includes a polysilicon gate separated from a semiconductor substrate by a re-oxidized nitrided oxide film in which the concentration of re-oxidized nitride in the film underlying the gate is non-uniform and in which the concentration of nitrogen in the substrate and the re-oxidized nitrided oxide along their interface and underlying the gate is non-uniform. Methods are disclosed of providing the non-uniform concentrations by incomplete shielding of the oxide by the gate during the nitriding and re-oxidizing process.

    摘要翻译： 一种半导体器件，其包括通过再氧化氮化氧化物膜从半导体衬底分离的多晶硅栅极，其中栅极下面的膜中再次氧化的氮化物的浓度不均匀，并且其中衬底中的氮浓度 并且沿其界面和栅极下方的再氧化的氮化氧化物是不均匀的。 公开了在氮化和再氧化过程期间通过栅极不完全屏蔽氧化物来提供不均匀浓度的方法。

    Method of making non-uniformly nitrided gate oxide
    2.
    发明授权
    Method of making non-uniformly nitrided gate oxide 失效
    制造不均匀氮化栅氧化物的方法

    公开(公告)号：US5650344A

    公开(公告)日：1997-07-22

    申请号：US503048

    申请日：1995-07-17

    申请人： Akira Ito ,  John T. Gasner

    发明人： Akira Ito ,  John T. Gasner

    IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/51 ,  H01L21/318

    CPC分类号： H01L21/28211 ,  H01L21/28176 ,  H01L29/518 ,  H01L29/66575 ,  Y10S148/043 ,  Y10S148/044 ,  Y10S148/112 ,  Y10S148/114 ,  Y10S438/954

    摘要： A method of making a semiconductor device in which a polysilicon gate is separated from a semiconductor substrate by a re-oxidized nitrided oxide film and in which the concentration of re-oxidized nitride in the film underlying the gate is non-uniform. The concentration of nitrogen in the substrate and the re-oxidized nitrided oxide along their interface and underlying the gate is non-uniform. The non-uniform concentrations are provided by incomplete shielding of the oxide by the gate during the nitriding and re-oxidizing processes.

    摘要翻译： 一种制造半导体器件的方法，其中多晶硅栅极通过再氧化氮化氧化物膜与半导体衬底分离，并且其中栅极下面的膜中的再次氧化氮化物的浓度是不均匀的。 衬底中的氮浓度和沿其界面和栅极底部的再氧化氮化氧化物的浓度是不均匀的。 在氮化和再氧化过程中，通过栅极对氧化物的不完全屏蔽提供了非均匀浓度。

    Method and system for last gasp device detection
    7.
    发明授权
    Method and system for last gasp device detection 有权
    最后一个喘气装置检测方法和系统

    公开(公告)号：US09088994B2

    公开(公告)日：2015-07-21

    申请号：US13601692

    申请日：2012-08-31

    申请人： Dorin Viorel ,  Akira Ito

    发明人： Dorin Viorel ,  Akira Ito

    IPC分类号： H04W24/00 ,  H04W74/08 ,  H04L29/14

    CPC分类号： H04W74/0841 ,  H04L69/40

    摘要： A method is provided for device detection by a base station comprising receiving a plurality of signals over a preamble subframe from an endpoint. The plurality of signals are attempting to access an access group of the preamble subframe. Additionally, the plurality of signals are received on a random access channel using a wireless network. Further, the plurality of signals have a plurality of last gasp messages (LGMs). The method additionally comprises determining an allowable rate of collisions for the plurality of signals and determining an actual rate of collisions for the plurality of signals. The method includes increasing the size of the access group allocated to the plurality of signals having the plurality of LGMs, based on whether the actual rate of collisions exceeds the allowable rate of collisions.

    摘要翻译： 提供了一种用于由基站进行设备检测的方法，包括：从端点通过前导码子帧接收多个信号。 多个信号正试图访问前同步码子帧的接入组。 另外，使用无线网络在随机接入信道上接收多个信号。 此外，多个信号具有多个最后的喘气信息（LGM）。 该方法还包括确定多个信号的可允许冲突率并确定多个信号的实际碰撞速率。 该方法包括：基于实际的冲突率是否超过允许的冲突率，增加分配给具有多个LGM的多个信号的接入组的大小。

    Field transistor structure manufactured using gate last process
    8.
    发明授权
    Field transistor structure manufactured using gate last process 有权
    使用门最后工艺制造的场晶体管结构

    公开(公告)号：US08841674B2

    公开(公告)日：2014-09-23

    申请号：US13174083

    申请日：2011-06-30

    申请人： Chao-Yang Lu ,  Guang-Jye Shiau ,  Akira Ito

    发明人： Chao-Yang Lu ,  Guang-Jye Shiau ,  Akira Ito

    IPC分类号： H01L29/78 ,  H01L21/28

    CPC分类号： H01L29/7839 ,  G11C17/16

    摘要： According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.

    摘要翻译： 根据本发明的实施例，提供了场晶体管结构。 场晶体管结构包括半导体衬底，金属栅极，多晶硅（多晶硅）层以及第一和第二金属部分。 多晶硅层具有第一，第二，第三和第四边，并且设置在第一侧的半导体衬底和第二侧上的金属栅极之间。 多晶硅层也设置在第三和第四侧上的第一和第二金属部分之间。 根据本发明的一些实施例，场晶体管结构还可以包括设置在多晶硅层和半导体衬底之间的薄金属层。 薄金属层可以电连接到第一和第二金属部分中的每一个。

    LUBRICANT DISTRIBUTION ACQUISITION DEVICE AND LUBRICANT DISTRIBUTION ACQUISITION METHOD
    10.
    发明申请
    LUBRICANT DISTRIBUTION ACQUISITION DEVICE AND LUBRICANT DISTRIBUTION ACQUISITION METHOD 审中-公开
    润滑剂分配获取装置和润滑剂分配获取方法

    公开(公告)号：US20130342685A1

    公开(公告)日：2013-12-26

    申请号：US14002400

    申请日：2012-03-08

    申请人： Koh-ichi Mochiki ,  Hiroyuki Nose ,  Akira Ito ,  Takehisa Takano

    发明人： Koh-ichi Mochiki ,  Hiroyuki Nose ,  Akira Ito ,  Takehisa Takano

    IPC分类号： F16N29/00

    CPC分类号： F16N29/00 ,  F16C19/06 ,  F16C19/52 ,  F16C33/6625 ,  G01M13/04 ,  G01N23/05

    摘要： In this lubricant distribution acquisition device (1), neutron beams that have been transmitted through a bearing (X) are converted into electromagnetic waves, and, by using the received electromagnetic waves to form images based on rotation angle signals that are output from an encoder (5) and show a rotation angle of the bearing, lubrication distribution data that shows the distribution of a lubricant inside the bearing is acquired. As a result, it is possible to make the pitch of the rotation angle uniform in each set of imaging data, and to thereby accurately ascertain the behavior of the lubricant inside the bearing.

    摘要翻译： 在这种润滑剂分配获取装置（1）中，已经通过轴承（X）传输的中子束被转换成电磁波，并且通过使用接收的电磁波基于从编码器输出的旋转角度信号形成图像 （5）并显示轴承的旋转角度，获得显示轴承内部润滑剂分布的润滑分布数据。 结果，可以使每组成像数据中的旋转角度的间距均匀，从而精确地确定轴承内的润滑剂的行为。