公开(公告)号：US11837680B2

公开(公告)日：2023-12-05

申请号：US17747408

申请日：2022-05-18

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park

IPC: H01L31/18 ,  H01L21/027 ,  H01L21/304 ,  H01L21/768 ,  H01L21/308 ,  H01L21/306 ,  H01L21/48 ,  H01L23/498 ,  H01L21/683

CPC classification number: H01L31/1804 ,  H01L21/0275 ,  H01L21/3046 ,  H01L21/3086 ,  H01L21/30621 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/49827 ,  H01L31/1892 ,  H01L2221/68345 ,  Y02E10/547

Abstract: The present disclosure relates to methods and apparatus for structuring a semiconductor substrate. In one embodiment, a method of substrate structuring includes applying a resist layer to a substrate optionally disposed on a carrier. The resist layer is patterned using ultraviolet radiation or laser ablation. The patterned portions of the resist layer are then transferred onto the substrate by micro-blasting to form desired features in the substrate while unexposed or un-ablated portions of the resist layer shield the rest of the substrate. The substrate is then exposed to an etch process and a de-bonding process to remove the resist layer and release the carrier.

公开(公告)号：US11388822B2

公开(公告)日：2022-07-12

申请号：US17005954

申请日：2020-08-28

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Steven Verhaverbeke ,  Han-Wen Chen ,  Chintan Buch ,  Prerna Goradia ,  Giback Park ,  Kyuil Cho

IPC: H05K1/02 ,  H05K3/00 ,  H05K3/06 ,  H05K3/28 ,  H05K3/46 ,  H05K3/38 ,  B32B15/08 ,  B32B7/12

Abstract: Methods for forming circuit boards and circuit boards using an adhesion layer are described. A substrate with two surfaces is exposed to a bifunctional organic compound to form an adhesion layer on the first substrate surface. A resin layer is then deposited on the adhesion layer and the exposed substrate surfaces. Portions of the resin layer may be removed to expose metal pads for contacts.

公开(公告)号：US11322381B2

公开(公告)日：2022-05-03

申请号：US16838999

申请日：2020-04-02

Applicant: Applied Materials, Inc.

Inventor： Daihua Zhang ,  Hou T. Ng ,  Nag B. Patibandla ,  Sivapackia Ganapathiappan ,  Yingdong Luo ,  Kyuil Cho ,  Han-Wen Chen

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/02

Abstract: A method for printing on a substrate includes printing a support structure by printing a liquid precursor material and curing the liquid precursor material, positioning a substrate within the support structure, printing one or more anchors on the substrate and the support structure by printing and curing the liquid precursor material to secure the substrate to the support structure, and printing one or more device structures on the substrate while anchored by printing and curing the liquid precursor material.

公开(公告)号：US11264331B2

公开(公告)日：2022-03-01

申请号：US16687567

申请日：2019-11-18

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Giorgio Cellere ,  Diego Tonini ,  Vincent Dicaprio ,  Kyuil Cho

IPC: H01L23/495 ,  H01L23/538 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06 ,  H01L21/60

Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.

公开(公告)号：US10283344B2

公开(公告)日：2019-05-07

申请号：US15325419

申请日：2015-07-10

Applicant: Applied Materials, Inc.

Inventor： Steven Verhaverbeke ,  Han-Wen Chen ,  Roman Gouk ,  Kurtis Leschkies

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: The present disclosure generally relates to apparatus and methods for forming a low-k dielectric material on a substrate. The method includes various substrate processing steps utilizing a wet processing chamber, a solvent exchange chamber, and a supercritical fluid chamber. More specifically, a dielectric material in an aqueous solution may be deposited on the substrate and a solvent exchange process may be performed to prepare the substrate for a supercritical drying process. During the supercritical drying process, liquids present in the solution and remaining on the substrate from the solvent exchange process are removed via sublimation during the supercritical drying process. The resulting dielectric material formed on the substrate may be considered a silica aerogel which exhibits a very low k-value.

公开(公告)号：US11887934B2

公开(公告)日：2024-01-30

申请号：US18075141

申请日：2022-12-05

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Giorgio Cellere ,  Diego Tonini ,  Vincent DiCaprio ,  Kyuil Cho

IPC: H01L23/495 ,  H01L23/538 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06 ,  H01L21/60

CPC classification number: H01L23/5389 ,  H01L21/486 ,  H01L21/4864 ,  H01L21/50 ,  H01L21/76802 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/66 ,  H01L25/0657 ,  H01L25/105 ,  H01L27/0688 ,  H01Q1/2283 ,  H01Q1/243 ,  H05K1/0243 ,  H01L2021/60007 ,  H01L2225/107 ,  H01L2225/1035

Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.

公开(公告)号：US11742330B2

公开(公告)日：2023-08-29

申请号：US17578271

申请日：2022-01-18

Applicant: Applied Materials, Inc.

Inventor： Kurtis Leschkies ,  Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Kyuil Cho ,  Jeffrey L. Franklin ,  Wei-Sheng Lei

IPC: H01L25/065 ,  H01L23/495 ,  H05K1/14 ,  H01L23/522 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L23/49586 ,  H01L23/5226 ,  H01L25/50 ,  H05K1/144

Abstract: The present disclosure generally relates to stacked miniaturized electronic devices and methods of forming the same. More specifically, embodiments described herein relate to semiconductor device spacers and methods of forming the same. The semiconductor device spacers described herein may be utilized to form stacked semiconductor package assemblies, stacked PCB assemblies, and the like.

公开(公告)号：US11676832B2

公开(公告)日：2023-06-13

申请号：US16938517

申请日：2020-07-24

Applicant: Applied Materials, Inc.

Inventor： Kurtis Leschkies ,  Jeffrey L. Franklin ,  Wei-Sheng Lei ,  Steven Verhaverbeke ,  Jean Delmas ,  Han-Wen Chen ,  Giback Park

IPC: H01L21/67 ,  H01L21/48 ,  B23K26/0622 ,  B23K26/382 ,  H01L23/498 ,  H01L23/31

CPC classification number: H01L21/67121 ,  B23K26/0622 ,  B23K26/382 ,  H01L21/486 ,  H01L23/3121 ,  H01L23/49827

Abstract: The present disclosure relates to systems and methods for fabricating semiconductor packages, and more particularly, for forming features in semiconductor packages by laser ablation. In one embodiment, the laser systems and methods described herein can be utilized to pattern a substrate to be utilized as a package frame for a semiconductor package having one or more interconnections formed therethrough and/or one or more semiconductor dies disposed therein. The laser systems described herein can produce tunable laser beams for forming features in a substrate or other package structure. Specifically, frequency, pulse width, pulse shape, and pulse energy of laser beams are tunable based on desired sizes of patterned features and on the material in which the patterned features are formed. The adjustability of the laser beams enables rapid and accurate formation of features in semiconductor substrates and packages with controlled depth and topography.

公开(公告)号：US11476202B2

公开(公告)日：2022-10-18

申请号：US17005905

申请日：2020-08-28

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Guan Huei See ,  Giback Park ,  Giorgio Cellere ,  Diego Tonini ,  Vincent Dicaprio ,  Kyuil Cho

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/498 ,  H01L23/13 ,  H01L23/14 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06 ,  H01L21/60

Abstract: The present disclosure relates to thin-form-factor reconstituted substrates and methods for forming the same. The reconstituted substrates described herein may be utilized to fabricate homogeneous or heterogeneous high-density 3D integrated devices. In one embodiment, a silicon substrate is structured by direct laser patterning to include one or more cavities and one or more vias. One or more semiconductor dies of the same or different types may be placed within the cavities and thereafter embedded in the substrate upon formation of an insulating layer thereon. One or more conductive interconnections are formed in the vias and may have contact points redistributed to desired surfaces of the reconstituted substrate. The reconstituted substrate may thereafter be integrated into a stacked 3D device.

公开(公告)号：US10886232B2

公开(公告)日：2021-01-05

申请号：US16746711

申请日：2020-01-17

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Giorgio Cellere ,  Diego Tonini ,  Vincent DiCaprio ,  Kyuil Cho

IPC: H01L23/495 ,  H01L23/538 ,  H01L23/498 ,  H01L21/48 ,  H01L23/14 ,  H01L25/10 ,  H01L23/13

Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.