公开(公告)号：US10886113B2

公开(公告)日：2021-01-05

申请号：US15818169

申请日：2017-11-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Thanh X. Nguyen ,  Weimin Zeng ,  Yong Cao

IPC: C23C14/36 ,  H01J37/34 ,  H01J37/32 ,  H01L21/02

Abstract: Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.

公开(公告)号：US09960021B2

公开(公告)日：2018-05-01

申请号：US14182831

申请日：2014-02-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Martin Lee Riker ,  Uday Pai ,  William Fruchterman ,  Keith A. Miller ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Kirankumar Savandaiah

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3414 ,  C23C14/3407 ,  H01J37/3411 ,  H01J37/3423 ,  H01J37/3435

Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion; a target disposed on the central portion; a plurality of recesses formed in the support portion; and a plurality of pads partially disposed in the plurality of recesses.

公开(公告)号：US11056325B2

公开(公告)日：2021-07-06

申请号：US16215769

申请日：2018-12-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Thanh X. Nguyen ,  Alexander Jansen ,  Yana Cheng ,  Randal Schmieding ,  Yong Cao ,  Xianmin Tang ,  William Johanson

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/54 ,  H01J37/32

Abstract: A movable substrate support with a top surface for holding a substrate, when present, is used in conjunction with a cover ring that is stationary to adjust for a shadow effect to control substrate edge uniformity during deposition processes. The cover ring is held stationary by an electrically isolated spacer that engages with a grounded shield in the process volume of a semiconductor process chamber. A controller adjusts the substrate support in response to deposition material on a top surface of the cover ring to maintain the shadow effect and substrate edge uniformity.

公开(公告)号：US10199204B2

公开(公告)日：2019-02-05

申请号：US14600915

申请日：2015-01-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Srinivasa Yedla ,  Sundarapandian Reddy ,  Uday Pai ,  Kirankumar Savandaiah ,  Thanh X. Nguyen ,  Muhammad M. Rasheed ,  Jallepally Ravi

IPC: H01J37/34

Abstract: Embodiments of target retaining apparatus and substrate processing chambers incorporating same are provided herein. In some embodiments, a target retaining apparatus includes a housing including a first slot and a second slot; a cam movably disposed in the housing, wherein movement of the cam is constrained along the first slot; a retaining arm movably coupled to the cam, wherein movement of the retaining arm is constrained along the second slot; a linking member including a first end rotatably coupled to the cam and a second end rotatably coupled to the retaining arm; and a biasing element biasing the cam towards a first position in which the retaining arm extends away from the housing.

公开(公告)号：US10043670B2

公开(公告)日：2018-08-07

申请号：US14981190

申请日：2015-12-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Jothilingam Ramalingam ,  Thanh X. Nguyen ,  Zhiyong Wang ,  Jianxin Lei ,  Xianmin Tang

IPC: H01L21/285 ,  H01L21/326 ,  C23C14/18 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56

Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure in an integrated circuit includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; flowing krypton into the plasma processing chamber; and exciting the krypton into a plasma to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.

公开(公告)号：US10734235B2

公开(公告)日：2020-08-04

申请号：US16052135

申请日：2018-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Jothilingam Ramalingam ,  Thanh X. Nguyen ,  Zhiyong Wang ,  Jianxin Lei ,  Xianmin Tang

IPC: H01L21/285 ,  C23C14/18 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/34 ,  H01L21/326

Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure in an integrated circuit includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; flowing krypton into the plasma processing chamber; and exciting the krypton into a plasma to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.

公开(公告)号：US09928997B2

公开(公告)日：2018-03-27

申请号：US14616895

申请日：2015-02-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Keith A. Miller ,  Thanh X. Nguyen ,  Ilya Lavitsky ,  Randy Schmieding ,  Prashanth Kothnur

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35

CPC classification number: H01J37/3452 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3408 ,  H01J37/3417 ,  H01J37/3467

Abstract: Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber includes an inner magnetron assembly coupled to an inner target assembly, and an outer magnet assembly coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly.

公开(公告)号：US09773665B1

公开(公告)日：2017-09-26

申请号：US15371142

申请日：2016-12-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin Zeng ,  Thanh X. Nguyen ,  Yong Cao

IPC: H01L21/02 ,  C23C14/22 ,  C23C14/06

CPC classification number: C23C14/22 ,  C23C14/0036 ,  C23C14/024 ,  C23C14/0652 ,  C23C14/185 ,  C23C14/35 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32853 ,  H01L21/02631

Abstract: Methods and apparatus for reducing particles generated in a process carried out in a process chamber are provided herein. In some embodiments, a process kit shield includes: a body having a surface facing a processing volume of a physical vapor deposition (PVD) process chamber, wherein the body is composed of aluminum oxide (Al2O3), and a silicon nitride layer on the surface of the body.

公开(公告)号：US09633839B2

公开(公告)日：2017-04-25

申请号：US14744688

申请日：2015-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin Zeng ,  Thanh X. Nguyen ,  Yana Cheng ,  Yong Cao ,  Daniel Lee Diehl ,  Srinivas Guggilla ,  Rongjun Wang ,  Xianmin Tang

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02266

Abstract: In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.

公开(公告)号：US08895450B2

公开(公告)日：2014-11-25

申请号：US14054477

申请日：2013-10-15

Applicant: Applied Materials, Inc.

Inventor： Yong Cao ,  Xianmin Tang ,  Srinivas Gandikota ,  Wei D. Wang ,  Zhendong Liu ,  Kevin Moraes ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Ananthkrishna Jupudi

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/28 ,  C23C14/35 ,  H01L21/285 ,  C23C14/34 ,  H01L29/49 ,  C23C14/16 ,  H01L29/78 ,  H01L29/51

CPC classification number: H01L21/28079 ,  C23C14/165 ,  C23C14/345 ,  C23C14/35 ,  H01L21/28088 ,  H01L21/2855 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

Abstract translation: 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。