One-step rapid manufacturing of metal and composite parts
    1.
    发明授权
    One-step rapid manufacturing of metal and composite parts 失效
    一步快速制造金属和复合材料零件

    公开(公告)号:US06526327B2

    公开(公告)日:2003-02-25

    申请号:US09731993

    申请日:2000-12-07

    IPC分类号: B23K2600

    摘要: A one-step rapid manufacturing process is used to create three dimensional prototyping parts. Material such as metal, ceramics and the like powder, and wire, and the like, is delivered to a laser beam-material interaction region where it is melted and deposited on a substrate. The melted and deposited material is placed on a XYZ workstation. Three dimensional parts are created by moving the XYZ workstation relative to the laser beam while simultaneously feeding powdered alloys, first in the XY and then in the Z plane. Beam shaping focusing optics can be used to tailor the intensity distribution of the laser beam to the requirements of the deposition layers, and can be used to create parts with desired mechanical or thermodynamic properties. Additional beam splitting and recombining optics can be used to allow powder to be fed at a perpendicular angle to the substrate.

    摘要翻译: 使用一步快速制造工艺来创建三维原型零件。 材料如金属,陶瓷等粉末和线等被输送到激光束材料相互作用区域,在该区域中熔化并沉积在基底上。 将熔融和沉积的材料放置在XYZ工作站上。 通过相对于激光束移动XYZ工作站来创建三维部件,同时首先在XY中并在Z平面中投入粉末状合金。 光束成形聚焦光学元件可用于根据沉积层的要求调整激光束的强度分布,并可用于产生具有所需机械或热力学性质的部件。 可以使用附加的光束分离和重组光学器件来允许粉末以与基底垂直的角度进给。

    One-step rapid manufacturing of metal and composite parts
    2.
    发明授权
    One-step rapid manufacturing of metal and composite parts 有权
    一步快速制造金属和复合材料零件

    公开(公告)号:US06203861B1

    公开(公告)日:2001-03-20

    申请号:US09221553

    申请日:1998-12-28

    IPC分类号: B05D306

    摘要: A one-step rapid manufacuring process is used to create three dimensional prototyping parts. Material such as metal, ceramics and the like powder, and wire, and the like, is delivered to a laser beam-material interaction region where it is melted and deposited on a substrate. The melted and deposited material is placed on a XYZ workstation. Three dimensional parts are created by moving the XYZ workstation relative to the laser beam while simultaneously feeding powdered alloys, first in the XY and then in the Z plane. Beam shaping focussing optics can be used to tailor the intensity distribution of the laser beam to the requirements of the deposition layers, and can be used to create parts with desired mechanical or thermodynamic properties. Additional beam splitting and recombining optics can be used to allow powder to be fed at a perpendicular angle to the substrate.

    摘要翻译: 使用一步快速制造工艺来创建三维原型零件。 材料如金属,陶瓷等粉末和线等被输送到激光束材料相互作用区域,在该区域中熔化并沉积在基底上。 将熔融和沉积的材料放置在XYZ工作站上。 通过相对于激光束移动XYZ工作站来创建三维部件,同时首先在XY中并在Z平面中投入粉末状合金。 光束成形聚焦光学元件可用于根据沉积层的要求调整激光束的强度分布,并可用于产生具有所需机械或热力学性质的部件。 可以使用附加的光束分离和重组光学器件来允许粉末以与基底垂直的角度进给。

    Optical device and method of making
    3.
    发明授权
    Optical device and method of making 有权
    光学装置及制作方法

    公开(公告)号:US09064798B2

    公开(公告)日:2015-06-23

    申请号:US13134091

    申请日:2011-05-27

    摘要: An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.

    摘要翻译: 公开了用于在宽带隙半导体衬底内形成光学器件的光学器件和方法。 通过将热能束引导到宽带隙半导体衬底的选定部分上以改变所选部分的光学特性以形成宽带隙半导体衬底中的光学器件而形成光学器件。 热能束限定光学装置的光学和物理性质。 光学装置可以采用电光装置的形式,其中添加位于宽带隙半导体衬底上的电极附近的光学装置,用于在施加到所述光学装置的电压变化时改变光学装置的光学特性 可选电极 本发明还包括在使用该光学装置用于远程感测温度,压力和/或化学成分的方法中。

    Method of fabricating solid state gas dissociating device by laser doping
    4.
    发明授权
    Method of fabricating solid state gas dissociating device by laser doping 失效
    通过激光掺杂制造固态气体解离装置的方法

    公开(公告)号:US08114693B1

    公开(公告)日:2012-02-14

    申请号:US12284115

    申请日:2008-09-18

    IPC分类号: H01L21/428

    摘要: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.

    摘要翻译: 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下,热能束被引导到宽带隙半导体材料的第一掺杂区域上。 第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。 在一个实施例中,固态能量转换装置作为发光装置工作,以便在向第一和第二欧姆接触施加电力时产生电磁辐射。 在另一个实施例中,固态能量转换装置作为光伏器件工作,以在施加电磁辐射时在第一和第二欧姆接触之间产生电力。

    Solid state energy photovoltaic device
    5.
    发明申请
    Solid state energy photovoltaic device 失效
    固态能量光伏器件

    公开(公告)号:US20110272710A1

    公开(公告)日:2011-11-10

    申请号:US13135736

    申请日:2011-07-14

    摘要: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.

    摘要翻译: 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下,热能束被引导到宽带隙半导体材料的第一掺杂区域上。 第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。 在一个实施例中,固态能量转换装置作为发光装置工作,以便在向第一和第二欧姆接触施加电力时产生电磁辐射。 在另一个实施例中,固态能量转换装置作为光伏器件工作,以在施加电磁辐射时在第一和第二欧姆接触之间产生电力。

    Energy conversion device
    6.
    发明申请
    Energy conversion device 有权
    能量转换装置

    公开(公告)号:US20110056542A1

    公开(公告)日:2011-03-10

    申请号:US12592695

    申请日:2009-12-01

    IPC分类号: H01L31/102 F24J2/04 H01L31/18

    摘要: A solid-state energy conversion device and method of making is disclosed wherein the solid-state energy conversion device is formed through the conversion of an insulating material. In one embodiment, the solid-state energy conversion device operates as a photovoltaic device to provide an output of electrical energy upon an input of electromagnetic radiation. In another embodiment, the solid-state energy conversion device operates as a light emitting device to provide an output of electromagnetic radiation upon an input of electrical energy. In one example, the photovoltaic device is combined with a solar liquid heater for heating a liquid. In another example, the photovoltaic device is combined with a solar liquid heater for treating water.

    摘要翻译: 公开了一种固态能量转换装置及其制造方法,其中通过绝缘材料的转换形成固体能量转换装置。 在一个实施例中,固态能量转换装置用作光电装置,以在电磁辐射的输入上提供电能的输出。 在另一个实施例中,固态能量转换装置用作发光装置,以在电能输入上提供电磁辐射的输出。 在一个示例中,光伏器件与用于加热液体的太阳能液体加热器组合。 在另一个实例中,光伏器件与用于处理水的太阳能液体加热器组合。

    Deposition of crystalline layers on polymer substrates using nanoparticles and laser nanoforming
    7.
    发明授权
    Deposition of crystalline layers on polymer substrates using nanoparticles and laser nanoforming 失效
    使用纳米颗粒和激光纳米成型在聚合物基底上沉积结晶层

    公开(公告)号:US07691731B2

    公开(公告)日:2010-04-06

    申请号:US11686572

    申请日:2007-03-15

    IPC分类号: H01L21/20 H01L21/36

    摘要: A method of forming crystalline semiconducting layers on low melting or low softening point substrates includes the steps of providing an aqueous solution medium including a plurality of semiconductor nanoparticles dispersed therein having a median size less than 10 nm, and applying the solution medium to at least one region of a substrate to be coated. The substrate has a melting or softening point of

    摘要翻译: 在低熔点或低软化点底物上形成结晶半导体层的方法包括以下步骤:提供包含分散在其中的多个半导体纳米颗粒的水溶液介质,其中间尺寸小于10nm,并将溶液介质施加到至少一个 要涂覆的基材的区域。 基材的熔点或软化点<200℃。将溶液介质蒸发,激光照射至少一个区域,使纳米粒子熔融并进行退火,得到具有再结晶组织的连续膜。 一种制品包括多晶半导体层,其包括主要在2至50μm尺寸范围内的多个微晶,以及支撑半导体层的熔点或软化点<200℃的基底。 与远离界面的平均晶粒尺寸相比,在邻近半导体层的界面处,微晶的平均晶粒尺寸较小。

    Process for fabricating semiconductor component
    8.
    发明授权
    Process for fabricating semiconductor component 有权
    制造半导体元件的工艺

    公开(公告)号:US07268063B1

    公开(公告)日:2007-09-11

    申请号:US11141913

    申请日:2005-06-01

    IPC分类号: H01L21/20

    摘要: A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.

    摘要翻译: 公开了一种用于原位制造嵌入衬底中的半导体组件的工艺。 用第一激光束烧蚀衬底以在其中形成空隙。 第一导电元件用第二激光束形成在衬底的空隙中。 在存在沉积气氛的情况下,第三激光束在第一导电元件上沉积半导体材料。 第二导电元件用第四激光束形成在第一半导体材料上。 该工艺可用于制造肖特基势垒二极管或结型场效应晶体管等。

    Laser via drilling apparatus and methods
    9.
    发明申请
    Laser via drilling apparatus and methods 有权
    激光通孔钻孔设备及方法

    公开(公告)号:US20070145024A1

    公开(公告)日:2007-06-28

    申请号:US11319824

    申请日:2005-12-28

    IPC分类号: B23K26/38

    摘要: A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.

    摘要翻译: 一种方法包括产生激光束并将光束施加到衬底以在衬底中形成通孔。 激光束具有在横向于横梁的传播方向的横截面处获得的强度分布。 强度分布在横截面的内部区域上具有第一基本上均匀的水平,并且横跨横截面的外部区域具有第二基本均匀的水平。 第二强度水平大于第一强度水平。