公开(公告)号：US20120021175A1

公开(公告)日：2012-01-26

申请号：US13185544

申请日：2011-07-19

申请人： Baxter Moody ,  Rafael Dalmau ,  David Henshall ,  Raoul Schlesser

发明人： Baxter Moody ,  Rafael Dalmau ,  David Henshall ,  Raoul Schlesser

IPC分类号： B32B3/00 ,  C04B35/64 ,  C01B21/072

CPC分类号： C01B21/072 ,  C04B35/581 ,  C04B35/64 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5481 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/6586 ,  C04B2235/66 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/94 ,  C04B2235/95 ,  C04B2235/963 ,  Y10T428/24355

摘要： Methods of preparing polycrystalline aluminum nitride materials that have high density, high purity, and favorable surface morphology are disclosed. The methods generally comprises pressing aluminum nitride powders to form a slug, sintering the slug to form a sintered, polycrystalline aluminum nitride boule, and optionally shaping the boule and/or polishing at least a portion of the boule to provide a finished substrate. The sintered, polycrystalline aluminum nitride materials beneficially are prepared without the use of any sintering aid or binder, and the formed materials exhibit excellent density, AlN purity, and surface morphology.

摘要翻译： 公开了制备具有高密度，高纯度和良好的表面形态的多晶氮化铝材料的方法。 所述方法通常包括压制氮化铝粉末以形成团块，烧结团块以形成烧结的多晶氮化铝坯料，以及任选地使该坯料成形和/或抛光至少一部分该坯料以提供成品衬底。 烧结的多晶氮化铝材料有利地是在不使用任何烧结助剂或粘合剂的情况下制备的，并且所形成的材料表现出优异的密度，AlN纯度和表面形态。

公开(公告)号：US08974726B2

公开(公告)日：2015-03-10

申请号：US13185544

申请日：2011-07-19

申请人： Baxter Moody ,  Rafael Dalmau ,  David Henshall ,  Raoul Schlesser

发明人： Baxter Moody ,  Rafael Dalmau ,  David Henshall ,  Raoul Schlesser

IPC分类号： C04B35/581

CPC分类号： C01B21/072 ,  C04B35/581 ,  C04B35/64 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5481 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/6586 ,  C04B2235/66 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/94 ,  C04B2235/95 ,  C04B2235/963 ,  Y10T428/24355

摘要： Methods of preparing polycrystalline aluminum nitride materials that have high density, high purity, and favorable surface morphology are disclosed. The methods generally comprises pressing aluminum nitride powders to form a slug, sintering the slug to form a sintered, polycrystalline aluminum nitride boule, and optionally shaping the boule and/or polishing at least a portion of the boule to provide a finished substrate. The sintered, polycrystalline aluminum nitride materials beneficially are prepared without the use of any sintering aid or binder, and the formed materials exhibit excellent density, AlN purity, and surface morphology.

摘要翻译： 公开了制备具有高密度，高纯度和良好的表面形态的多晶氮化铝材料的方法。 所述方法通常包括压制氮化铝粉末以形成团块，烧结团块以形成烧结的多晶氮化铝坯料，以及任选地使该坯料成形和/或抛光至少一部分该坯料以提供成品衬底。 烧结的多晶氮化铝材料有利地是在不使用任何烧结助剂或粘合剂的情况下制备的，并且所形成的材料表现出优异的密度，AlN纯度和表面形态。

公开(公告)号：US08766274B2

公开(公告)日：2014-07-01

申请号：US13324261

申请日：2011-12-13

申请人： Spalding Craft ,  Baxter Moody ,  Rafael Dalmau ,  Raoul Schlesser

发明人： Spalding Craft ,  Baxter Moody ,  Rafael Dalmau ,  Raoul Schlesser

IPC分类号： H01L31/0256 ,  H01L21/20 ,  H01L21/36

CPC分类号： C04B35/581 ,  C04B35/6455 ,  C04B37/001 ,  C04B37/003 ,  C04B2235/3217 ,  C04B2235/3865 ,  C04B2235/3869 ,  C04B2235/3886 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5481 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/666 ,  C04B2235/72 ,  C04B2235/80 ,  C04B2235/9607 ,  C04B2235/963 ,  C04B2235/9638 ,  C04B2237/36 ,  C04B2237/361 ,  C04B2237/366 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02538 ,  H01L33/0075

摘要： Disclosed are methods and materials useful in the preparation of semiconductor devices. In particular embodiments, disclosed are methods for engineering polycrystalline aluminum nitride substrates that are thermally matched to further materials that can be combined therewith. For example, the polycrystalline aluminum nitride substrates can be engineered to have a coefficient of thermal expansion (CTE) that is closely matched to the CTE of a semiconductor material and/or to a material that can be used as a growth substrate for a semiconductor material. The invention also encompasses devices incorporating such thermally engineered substrates and semiconductor materials grown using such thermally engineered substrates. The thermally engineered substrates are advantageous for overcoming problems caused by damage arising from CTE mismatch between component layers in semiconductor preparation methods and materials.

摘要翻译： 公开了用于制备半导体器件的方法和材料。 在具体实施方案中，公开了用于工程化多晶氮化铝衬底的方法，其与可与其组合的其它材料热匹配。 例如，多晶氮化铝衬底可被设计成具有与半导体材料的CTE密切匹配的热膨胀系数（CTE）和/或可用作半导体材料的生长衬底的材料 。 本发明还包括结合这样的热工程衬底和使用这种热工程衬底生长的半导体材料的器件。 热工程衬底有利于克服由半导体制备方法和材料中的组分层之间的CTE失配引起的损伤所引起的问题。

公开(公告)号：US20120146023A1

公开(公告)日：2012-06-14

申请号：US13324261

申请日：2011-12-13

申请人： Spalding Craft ,  Baxter Moody ,  Rafael Dalmau ,  Raoul Schlesser

发明人： Spalding Craft ,  Baxter Moody ,  Rafael Dalmau ,  Raoul Schlesser

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： C04B35/581 ,  C04B35/6455 ,  C04B37/001 ,  C04B37/003 ,  C04B2235/3217 ,  C04B2235/3865 ,  C04B2235/3869 ,  C04B2235/3886 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5481 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/666 ,  C04B2235/72 ,  C04B2235/80 ,  C04B2235/9607 ,  C04B2235/963 ,  C04B2235/9638 ,  C04B2237/36 ,  C04B2237/361 ,  C04B2237/366 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02538 ,  H01L33/0075

摘要： Disclosed are methods and materials useful in the preparation of semiconductor devices. In particular embodiments, disclosed are methods for engineering polycrystalline aluminum nitride substrates that are thermally matched to further materials that can be combined therewith. For example, the polycrystalline aluminum nitride substrates can be engineered to have a coefficient of thermal expansion (CTE) that is closely matched to the CTE of a semiconductor material and/or to a material that can be used as a growth substrate for a semiconductor material. The invention also encompasses devices incorporating such thermally engineered substrates and semiconductor materials grown using such thermally engineered substrates. The thermally engineered substrates are advantageous for overcoming problems caused by damage arising from CTE mismatch between component layers in semiconductor preparation methods and materials.

摘要翻译： 公开了用于制备半导体器件的方法和材料。 在具体实施方案中，公开了用于工程化多晶氮化铝衬底的方法，其与可与其组合的其它材料热匹配。 例如，多晶氮化铝衬底可被设计成具有与半导体材料的CTE密切匹配的热膨胀系数（CTE）和/或可用作半导体材料的生长衬底的材料 。 本发明还包括结合这样的热工程衬底和使用这种热工程衬底生长的半导体材料的器件。 热工程衬底有利于克服由半导体制备方法和材料中的组分层之间的CTE失配引起的损伤所引起的问题。

公开(公告)号：US20060280640A1

公开(公告)日：2006-12-14

申请号：US11398270

申请日：2006-04-05

申请人： Raoul Schlesser ,  Rafael Dalmau ,  Vladimir Noveski ,  Zlatko Sitar

发明人： Raoul Schlesser ,  Rafael Dalmau ,  Vladimir Noveski ,  Zlatko Sitar

IPC分类号： C22C1/05 ,  B22F1/02 ,  B29C67/00 ,  C04B35/653 ,  C04B35/64

CPC分类号： C04B35/56 ,  B22F5/007 ,  B22F2998/10 ,  B22F2999/00 ,  C04B35/5607 ,  C04B35/64 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/608 ,  C04B2235/612 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/94 ,  C22C1/045 ,  C30B23/00 ,  C30B23/066 ,  C30B29/36 ,  Y10T428/13 ,  B22F3/02 ,  B22F3/04 ,  B22F3/1007 ,  B22F3/14 ,  B22F2201/20

摘要： The invention provides a method of forming a dense, shaped article, such as a crucible, formed of a refractory material, the method comprising the steps of placing a refractory material having a melting point of at least about 2900° C. in a mold configured to form the powder into an approximation of the desired shape. The mold containing the powder is treated at a temperature and pressure sufficient to form a shape-sustaining molded powder that conforms to the shape of the mold, wherein the treating step involves sintering or isostatic pressing. The shape-sustaining molded powder can be machined into the final desired shap and then sintered at a temperature and for a time sufficient to produce a dense, shaped article having a density of greater than about 90% and very low open porosity. Preferred refractory materials include tantalum carbide and niobium carbide.

公开(公告)号：US09840790B2

公开(公告)日：2017-12-12

申请号：US14422888

申请日：2012-08-23

申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Toru Kinoshita ,  Yuki Kubota ,  Rafael F. Dalmau ,  Jinqiao Xie ,  Baxter F. Moody ,  Raoul Schlesser ,  Zlatko Sitar

发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Toru Kinoshita ,  Yuki Kubota ,  Rafael F. Dalmau ,  Jinqiao Xie ,  Baxter F. Moody ,  Raoul Schlesser ,  Zlatko Sitar

IPC分类号： C30B25/02 ,  C30B25/20 ,  C30B25/14 ,  C30B29/40 ,  H01L33/00 ,  H01L33/32 ,  H01L33/02 ,  C30B25/16 ,  C01B21/072 ,  H01L33/18

CPC分类号： C30B25/20 ,  C01B21/072 ,  C01P2006/60 ,  C30B25/14 ,  C30B25/165 ,  C30B29/403 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/18 ,  H01L33/32 ,  Y10T428/26

摘要： The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

公开(公告)号：US08414677B2

公开(公告)日：2013-04-09

申请号：US12556851

申请日：2009-09-10

申请人： Raoul Schlesser ,  Rafael F. Dalmau ,  Vladimir Noveski ,  Zlatko Sitar

发明人： Raoul Schlesser ,  Rafael F. Dalmau ,  Vladimir Noveski ,  Zlatko Sitar

IPC分类号： C22C29/02

CPC分类号： C04B35/56 ,  B22F5/007 ,  B22F2998/10 ,  B22F2999/00 ,  C04B35/5607 ,  C04B35/64 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/608 ,  C04B2235/612 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/94 ,  C22C1/045 ,  C30B23/00 ,  C30B23/066 ,  C30B29/36 ,  Y10T428/13 ,  B22F3/02 ,  B22F3/04 ,  B22F3/1007 ,  B22F3/14 ,  B22F2201/20

摘要： The invention provides a method of forming a dense, shaped article, such as a crucible, formed of a refractory material, the method comprising the steps of placing a refractory material having a melting point of at least about 2900° C. in a mold configured to form the powder into an approximation of the desired shape. The mold containing the powder is treated at a temperature and pressure sufficient to form a shape-sustaining molded powder that conforms to the shape of the mold, wherein the treating step involves sintering or isostatic pressing. The shape-sustaining molded powder can be machined into the final desired shape and then sintered at a temperature and for a time sufficient to produce a dense, shaped article having a density of greater than about 90% and very low open porosity. Preferred refractory materials include tantalum carbide and niobium carbide.

摘要翻译： 本发明提供一种形成由耐火材料形成的致密成型制品例如坩埚的方法，该方法包括以下步骤：将具有至少约2900℃的熔点的耐火材料放置在模具中 以将粉末形成为所需形状的近似值。 含有粉末的模具在足以形成符合模具形状的形状保持性成型粉末的温度和压力下进行处理，其中处理步骤包括烧结或等静压。 形状维持的成型粉末可以加工成最终所需的形状，然后在足以产生密度大于约90％和非常低的开孔率的致密成型制品的温度和时间下烧结。 优选的耐火材料包括碳化钽和碳化铌。

公开(公告)号：US07815970B2

公开(公告)日：2010-10-19

申请号：US11382806

申请日：2006-05-11

申请人： Raoul Schlesser ,  Ramón R. Collazo ,  Zlatko Sitar

发明人： Raoul Schlesser ,  Ramón R. Collazo ,  Zlatko Sitar

IPC分类号： C23C16/34

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  Y10T428/24355 ,  Y10T428/24752

摘要： The present invention provides methods of preparing Group III-nitride films of controlled polarity and substrates coated with such controlled polarity films. In particular, the invention provides substrate preparation steps that optimize the substrate surface for facilitating growth of a Group III-polar film, an N-polar film, or a selectively patterned film with both a Group III-polar portion and an N-polar portion in precise positioning. The methods of the invention are particularly suited for use in CVD methods.

摘要翻译： 本发明提供了制备具有受控极性的III族氮化物膜的方法和用这种受控极性膜涂覆的基材。 特别地，本发明提供了底物制备步骤，其优化了基质表面以促进III族极性薄膜，N-极性薄膜或具有III族极性部分和N-极性部分的选择性图案化薄膜的生长 精确定位。 本发明的方法特别适用于CVD方法。

公开(公告)号：US07678195B2

公开(公告)日：2010-03-16

申请号：US11399713

申请日：2006-04-06

申请人： Raoul Schlesser ,  Vladimir Noveski ,  Zlatko Sitar

发明人： Raoul Schlesser ,  Vladimir Noveski ,  Zlatko Sitar

IPC分类号： C30B23/00

CPC分类号： C30B29/403 ,  C30B23/00

摘要： A method of growing bulk single crystals of an AlN on a single crystal seed is provided, wherein an AlN source material is placed within a crucible chamber in spacial relationship to a seed fused to the cap of the crucible. The crucible is heated in a manner sufficient to establish a temperature gradient between the source material and the seed with the seed at a higher temperature than the source material such that the outer layer of the seed is evaporated, thereby cleaning the seed of contaminants and removing any damage to the seed incurred during seed preparation. Thereafter, the temperature gradient between the source material and the seed is inverted so that the source material is sublimed and deposited on the seed, thereby growing a bulk single crystal of AlN.

摘要翻译： 提供了在单晶种子上生长AlN的单体单晶的方法，其中将AlN源材料置于坩埚室内，与熔融到坩埚盖上的种子呈空间关系。 将坩埚加热至足以在源材料和种子之间的温度梯度比源材料更高的温度建立温度梯度，使得种子的外层蒸发，从而清洁污染物种子并除去 在种子准备期间对种子的任何损害。 此后，源材料和种子之间的温度梯度被反转，使得源材料升华并沉积在种子上，从而生长AlN的大块单晶。

公开(公告)号：US20060257626A1

公开(公告)日：2006-11-16

申请号：US11382806

申请日：2006-05-11

申请人： Raoul Schlesser ,  Ramon Collazo ,  Zlatko Sitar

发明人： Raoul Schlesser ,  Ramon Collazo ,  Zlatko Sitar

IPC分类号： B32B18/00 ,  B32B9/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  Y10T428/24355 ,  Y10T428/24752

摘要： The present invention provides methods of preparing Group III-nitride films of controlled polarity and substrates coated with such controlled polarity films. In particular, the invention provides substrate preparation steps that optimize the substrate surface for facilitating growth of a Group III-polar film, an N-polar film, or a selectively patterned film with both a Group III-polar portion and an N-polar portion in precise positioning. The methods of the invention are particularly suited for use in CVD methods.

摘要翻译： 本发明提供了制备具有受控极性的III族氮化物膜的方法和用这种受控极性膜涂覆的基材。 特别地，本发明提供了底物制备步骤，其优化了基质表面以促进III族极性薄膜，N-极性薄膜或具有III族极性部分和N-极性部分的选择性图案化薄膜的生长 精确定位。 本发明的方法特别适用于CVD方法。