公开(公告)号：US07980233B2

公开(公告)日：2011-07-19

申请号：US12111445

申请日：2008-04-29

申请人： Brian Wagner ,  Roger Zoch ,  Barry Verdegan ,  Harold R. Martin ,  Jeff Morgan ,  Stephen L. Fallon

发明人： Brian Wagner ,  Roger Zoch ,  Barry Verdegan ,  Harold R. Martin ,  Jeff Morgan ,  Stephen L. Fallon

IPC分类号： F02B25/06

CPC分类号： F01M9/02 ,  F01M13/04 ,  F01M2013/0016 ,  F01M2013/0433 ,  F01M2013/0483 ,  F01M2013/0488

摘要： A separation assembly is generally described that can chemically treat condensate material in a fluid stream. One particular example of a separation assembly is a crankcase filtration assembly used in engine oil filtration and that includes an additive material disposed within the crankcase filtration assembly. The additive material chemically treats condensate material of blow-by fluids received by the crankcase filtration assembly when a condition is present in the condensate material. For example, the crankcase filtration assembly provides a unique structure with a chemically treated component that can reduce an acidic condition in condensate material received by the crankcase filtration assembly, and even more generally may extend engine oil life.

摘要翻译： 通常描述分离组件，其可以在流体流中化学处理冷凝物质。 分离组件的一个具体示例是用于发动机油过滤中的曲轴箱过滤组件，并且包括设置在曲轴箱过滤组件内的添加剂材料。 当冷凝材料中存在条件时，添加剂材料化学处理由曲轴箱过滤组件接收的窜气流体的冷凝物质。 例如，曲轴箱过滤组件提供具有化学处理组分的独特结构，其可以减少由曲轴箱过滤组件接收的冷凝物质中的酸性状态，甚至更通常地可延长发动机油寿命。

公开(公告)号：US06528105B1

公开(公告)日：2003-03-04

申请号：US09617676

申请日：2000-07-14

申请人： Mark Gerhart ,  Edward O'Brien ,  Simon Gainey ,  Robert Guldi ,  Brian Wagner ,  Mike Richmond

发明人： Mark Gerhart ,  Edward O'Brien ,  Simon Gainey ,  Robert Guldi ,  Brian Wagner ,  Mike Richmond

IPC分类号： B65D300

CPC分类号： A47G19/02 ,  B65D81/3227

摘要： The invention discloses a method and an apparatus for a food container which includes an inner member (which can be a cup or a bottle) for holding a particulate food; an outer member (which can be a second cup or a second bottle) adapted to receive the inner member, with a space between the inner and the outer members, for a liquid food; where the inner member interlocks with the outer member and openings are provided for the discharge of the liquid food; and the particulate food and the liquid food can be consumed simultaneously by tilting the container towards the mouth of the user to discharge or withdraw particulate food from the inner member and liquid food from the outer member through the aperture.

公开(公告)号：US10276504B2

公开(公告)日：2019-04-30

申请号：US15597565

申请日：2017-05-17

申请人： Vivien Luu ,  Christopher F. Kirby ,  Brian Wagner ,  Michael Rennie

发明人： Vivien Luu ,  Christopher F. Kirby ,  Brian Wagner ,  Michael Rennie

IPC分类号： H01L23/532 ,  H01L21/00 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02 ,  H01L39/24

摘要： A method is provided of forming a superconductor interconnect structure. The method comprises forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further comprises performing a cleaning process on the top surface of the dielectric layer and in the interconnect opening while in the deposition chamber, and depositing a superconducting metal in the interconnect opening while in the deposition chamber to form a superconducting element in the superconductor interconnect structure.

公开(公告)号：US07830644B2

公开(公告)日：2010-11-09

申请号：US11713783

申请日：2007-03-05

申请人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

发明人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

IPC分类号： H01G4/06 ,  H01G4/005

CPC分类号： C01G23/002 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/462 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3281 ,  H01G4/105 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/306

摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaCu 3 Ti 4 O 12或La 3 Ga 5 SiO 4的电介质。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善的结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器

公开(公告)号：US20080206121A1

公开(公告)日：2008-08-28

申请号：US12081636

申请日：2008-04-18

申请人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

发明人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

IPC分类号： C01B33/00 ,  C23C16/06

CPC分类号： C30B23/02 ,  C30B23/025 ,  C30B25/183 ,  C30B29/36 ,  C30B29/406

摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

摘要翻译： 公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。 可以通过使用AlN和SiC粉末作为原料的气相沉积法在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。 （AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷 匹配和化学。

公开(公告)号：US09570646B2

公开(公告)日：2017-02-14

申请号：US14185567

申请日：2014-02-20

申请人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/0336 ,  H01L31/0232 ,  H01L27/144 ,  H01L31/18

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交​​叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。

公开(公告)号：US20090302426A1

公开(公告)日：2009-12-10

申请号：US12136193

申请日：2008-06-10

申请人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

发明人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

IPC分类号： H01L21/329 ,  H01L29/868

CPC分类号： F01P3/2285 ,  F01P2025/04 ,  Y10S977/774

摘要： A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.

摘要翻译： 提供了一种用于制造具有以离散区域或图案选择性地沉积在硅衬底上的锗纳米膜层的半导体器件的工艺。 还提供了一种半导体器件，其具有锗膜层，其设置在期望的区域中或具有可在不进行蚀刻和图案化锗膜层的情况下制备的所需图案。 还提供了制备具有一种导电类型的硅衬底和不同导电类型的锗纳米膜层的半导体器件的工艺。 提供具有选择性生长的锗纳米薄膜层的半导体器件，例如包括发光二极管，光电探测器等的二极管。 该方法也可用于制造诸如CMOS器件，MOSFET器件等的先进的半导体器件。

公开(公告)号：US07737534B2

公开(公告)日：2010-06-15

申请号：US12136193

申请日：2008-06-10

申请人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

发明人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

IPC分类号： H01L29/868

CPC分类号： F01P3/2285 ,  F01P2025/04 ,  Y10S977/774

摘要： A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.

摘要翻译： 提供了一种用于制造具有以离散区域或图案选择性地沉积在硅衬底上的锗纳米膜层的半导体器件的工艺。 还提供了一种半导体器件，其具有锗膜层，其设置在期望的区域中或具有可在不进行蚀刻和图案化锗膜层的情况下制备的所需图案。 还提供了制备具有一种导电类型的硅衬底和不同导电类型的锗纳米膜层的半导体器件的工艺。 提供具有选择性生长的锗纳米薄膜层的半导体器件，例如包括发光二极管，光电探测器等的二极管。 该方法也可用于制造诸如CMOS器件，MOSFET器件等的先进的半导体器件。

公开(公告)号：US20090220801A1

公开(公告)日：2009-09-03

申请号：US12040785

申请日：2008-02-29

申请人： Brian Wagner ,  Travis J. Randall ,  Thomas J. Knight ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Sean R. McLaughlin ,  Narsingh B. Singh ,  Mark Usefara

发明人： Brian Wagner ,  Travis J. Randall ,  Thomas J. Knight ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Sean R. McLaughlin ,  Narsingh B. Singh ,  Mark Usefara

IPC分类号： C23C14/34 ,  B32B9/04

CPC分类号： C30B29/36 ,  C30B23/02

摘要： The disclosure relates to a method and apparatus for growth of high-purity 6H SiC single crystal using a sputtering technique. In one embodiment, the disclosure relates to a method for depositing a high purity 6H-SiC single crystal film on a substrate, the method including: providing a silicon substrate having an etched surface; placing the substrate and an SiC source in a deposition chamber; achieving a first vacuum level in the deposition chamber; pressurizing the chamber with a gas; depositing the SiC film directly on the etched silicon substrate from a sputtering source by: heating the substrate to a temperature below silicon melting point, using a low energy plasma in the deposition chamber; and depositing a layer of hexagonal SiC film on the etched surface of the substrate.

摘要翻译： 本公开涉及使用溅射技术生长高纯度6H SiC单晶的方法和装置。 在一个实施方案中，本公开涉及一种用于在基底上沉积高纯度6H-SiC单晶膜的方法，所述方法包括：提供具有蚀刻表面的硅衬底; 将衬底和SiC源放置在沉积室中; 在沉积室中达到第一真空度; 用气体对腔室加压; 通过以下方式将SiC膜直接沉积在蚀刻的硅衬底上：使用沉积室中的低能量等离子体将衬底加热到​​低于硅熔点的温度; 以及在衬底的蚀刻表面上沉积一层六方形的SiC膜。

公开(公告)号：US06641854B2

公开(公告)日：2003-11-04

申请号：US10282877

申请日：2002-10-29

申请人： Mark Gerhart ,  Edward O'Brien ,  Simon Gainey ,  Robert Guldi ,  Brian Wagner ,  Mike Richmond

发明人： Mark Gerhart ,  Edward O'Brien ,  Simon Gainey ,  Robert Guldi ,  Brian Wagner ,  Mike Richmond

IPC分类号： B65D300

CPC分类号： A47G19/02 ,  B65D81/3227

摘要： The invention discloses a method and an apparatus for a food container which includes an inner member (which can be a cup or a bottle) for holding a particulate food; an outer member (which can be a second cup or a second bottle) adapted to receive the inner member, with a space between the inner and the outer members, for a liquid food; where the inner member interlocks with the outer member and openings are provided for the discharge of the liquid food; and the particulate food and the liquid food can be consumed simultaneously by tilting the container towards the mouth of the user to discharge or withdraw particulate food from the inner member and liquid food from the outer member through the aperture.

摘要翻译： 本发明公开了一种用于食物容器的方法和装置，其包括用于保持颗粒状食物的内部构件（其可以是杯子或瓶子）; 适于接收内部构件的外部构件（其可以是第二杯或第二瓶），在内部和外部构件之间具有用于液体食物的空间; 其中内部构件与外部构件互锁并且开口用于排出液体食物; 并且通过使容器朝向使用者的嘴倾斜容器，可以同时消耗颗粒状食物和液体食物，以通过孔从外部构件和液体食物从内部构件和液体食物排出或从其中排出或从中抽出液体食物。