利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

27 条记录 (耗时 0.032 秒)

    HIGH-K PEROVSKITE MATERIALS AND METHODS OF MAKING AND USING THE SAME
    1.
    发明申请
    HIGH-K PEROVSKITE MATERIALS AND METHODS OF MAKING AND USING THE SAME 审中-公开
    高K薄膜材料及其制造和使用方法

    公开(公告)号：US20140134823A1

    公开(公告)日：2014-05-15

    申请号：US14128043

    申请日：2012-06-19

    申请人： Bryan C. Hendrix ,  Steven M. Bilodeau ,  Ing-Shin Barry Chen ,  Jeffrey F. Roeder ,  Gregory T. Stauf

    发明人： Bryan C. Hendrix ,  Steven M. Bilodeau ,  Ing-Shin Barry Chen ,  Jeffrey F. Roeder ,  Gregory T. Stauf

    IPC分类号： H01L49/02 ,  H01L27/108

    CPC分类号： H01L28/55 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/0228 ,  H01L27/108

    摘要： High-k materials and devices, e.g., DRAM capacitors, and methods of making and using the same. Various methods of forming perovskite films are described, including methods in which perovskite material is deposited on the substrate by a pulsed vapor deposition process involving contacting of the substrate with perovskite material-forming metal precursors. In one such method, the process is carried out with doping or alloying of the perovskite material with a higher mobility and/or higher volatility metal species than the metal species in the perovskite material-forming metal precursors. In another method, the perovskite material is exposed to elevated temperature for sufficient time to crystallize or to enhance crystallization of the perovskite material, followed by growth of the perovskite material under pulsed vapor deposition conditions. Various perovskite compositions are described, including: (Sr, Pb)TiO3; SrRuO3 or SrTiO3, doped with Zn, Cd or Hg; Sr(Sn,Ru)O3; and Sr(Sn,Ti)O3.

    摘要翻译： 高k材料和器件，例如DRAM电容器，以及制造和使用它们的方法。 描述了形成钙钛矿薄膜的各种方法，包括其中通过脉冲气相沉积工艺将钙钛矿材料沉积在基底上的方法，包括使基底与形成钙钛矿的金属前体接触。 在一种这样的方法中，该方法通过钙钛矿材料的掺杂或合金化与具有比形成钙钛矿材料的金属前体中的金属物质更高的迁移率和/或更高的挥发性金属物质进行。 在另一种方法中，将钙钛矿材料暴露于升高的温度足够的时间以结晶或增强钙钛矿材料的结晶，随后在脉冲气相沉积条件下生长钙钛矿材料。 描述了各种钙钛矿组合物，包括：（Sr，Pb）TiO 3; SrRuO3或SrTiO3，掺杂Zn，Cd或Hg; Sr（Sn，Ru）O3; 和Sr（Sn，Ti）O 3。

    Precursors for silicon dioxide gap fill
    3.
    发明授权
    Precursors for silicon dioxide gap fill 有权
    二氧化硅填充前体

    公开(公告)号：US09337054B2

    公开(公告)日：2016-05-10

    申请号：US12665929

    申请日：2008-06-27

    申请人： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    发明人： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    IPC分类号： H01L21/316 ,  H01L21/02

    CPC分类号： H01L21/02211 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/31604 ,  H01L21/31608 ,  H01L29/0649

    摘要： A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

    摘要翻译： 描述了一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底，并填充了其整个整体质量基本上无空隙特征和基本均匀密度的二氧化硅。 还描述了制造半导体产品的方法，其涉及使用特定的硅前体组合物，用于在沟槽中形成基本上无空隙且基本均匀的密度二氧化硅材料。 前体填充组合物可以包括硅和锗，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。 可以在前体填充组合物中使用抑制剂组分，以消除或最小化固化沟槽填充材料中的接缝形成。

    Systems and Methods for Determination of Endpoint of Chamber Cleaning Processes
    5.
    发明申请
    Systems and Methods for Determination of Endpoint of Chamber Cleaning Processes 审中-公开
    用于确定腔室清洁过程端点的系统和方法

    公开(公告)号：US20080251104A1

    公开(公告)日：2008-10-16

    申请号：US12088825

    申请日：2006-10-03

    申请人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

    发明人： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Bryan C. Hendrix ,  Philip S.H. Chen

    IPC分类号： B08B13/00

    CPC分类号： H01L21/67253 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32862 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/67069

    摘要： Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner.

    摘要翻译： 用于确定清洁过程的终点的装置和方法，其中清洁流体与结构接触以进行清洁。 清洁过程包括将清洁流体与要清洁的结构接触并产生具有对应于结构的清洁程度的显热热能特征的清洁流出物，将清洁物品放置在与清洁流出物相互作用的清洁流出物中以产生 指示清洁流出物的显热热能特征的响应，以及监测这种响应以确定何时完成清洁。 还描述了端点算法和端点监视，以及端点监视器传感器元件，其有效地以有效和可再现的方式确定端点条件。

    Stress control of thin films by mechanical deformation of wafer substrate
    8.
    发明授权
    Stress control of thin films by mechanical deformation of wafer substrate 失效
    通过晶片衬底的机械变形对薄膜进行应力控制

    公开(公告)号：US06514835B1

    公开(公告)日：2003-02-04

    申请号：US09676283

    申请日：2000-09-28

    申请人： Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau

    发明人： Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau

    IPC分类号： H01L2120

    CPC分类号： H01L41/257 ,  C23C14/50 ,  C23C14/541 ,  H01L21/302 ,  H01L21/31691 ,  H01L41/314

    摘要： A method of improving the physical and/or electrical and/or magnetic properties of a thin film material formed on a substrate, wherein the properties of the thin film material are stress-dependent, by selectively applying force to the substrate during the film formation and/or thereafter during the cooling of the film in the case of a film formed at elevated temperature, to impose through the substrate an applied force condition opposing or enhancing the retention of stress in the product film. The method of the invention has particular utility in the formation of ferroelectric thin films which are grown at temperature above the Curie temperature, and which may be placed in tension during the cooling of the film to provide ferroelectric domains with polarization in the plane of the film.

    摘要翻译： 一种改善形成在基底上的薄膜材料的物理和/或电学和/或磁性质的方法，其中薄膜材料的性质是依赖于应力的，通过在成膜期间选择性地对基底施加力，以及 /或之后在膜的冷却过程中，在高温下形成的膜的情况下，通过与衬底施加相反或增强产品膜中的应力保持的施加力条件。 本发明的方法在形成在高于居里温度的温度下生长的铁电薄膜具有特别的用途，并且可以在薄膜冷却期间放置张力以在薄膜的平面中提供具有极化的铁电畴 。

    PRECURSORS FOR SILICON DIOXIDE GAP FILL
    10.
    发明申请
    PRECURSORS FOR SILICON DIOXIDE GAP FILL 有权
    硅二氧化硅填料的前身

    公开(公告)号：US20100164057A1

    公开(公告)日：2010-07-01

    申请号：US12665929

    申请日：2008-06-27

    申请人： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    发明人： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    IPC分类号： H01L29/06 ,  C09D7/00 ,  H01L21/762

    CPC分类号： H01L21/02211 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/31604 ,  H01L21/31608 ,  H01L29/0649

    摘要： A full fill trench structure comprising a microelectronic device substrate having a high aspect ratio trench therein and a full filled mass of silicon dioxide in the trench, wherein the silicon dioxide is of a substantially void-free character and has a substantially uniform density throughout its bulk mass. A corresponding method of manufacturing a semiconductor product is described, involving use of specific silicon precursor compositions for use in full filling a trench of a microelectronic device substrate, in which the silicon dioxide precursor composition is processed to conduct hydrolysis and condensation reactions for forming the substantially void-free and substantially uniform density silicon dioxide material in the trench. The fill process may be carried out with a precursor fill composition including silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component, e.g., methanol, may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

    摘要翻译： 一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底和沟槽中的完整填充质量的二氧化硅，其中二氧化硅具有基本上无空隙的特性，并且在其整个体积中具有基本均匀的密度 质量 描述了制造半导体产品的相应方法，其涉及使用特定的硅前体组合物，用于完全填充微电子器件衬底的沟槽，其中二氧化硅前体组合物被处理以进行水解和缩合反应，以形成基本上 在沟槽中的无空隙和基本均匀的密度二氧化硅材料。 填充过程可以用包括硅和锗的前体填充组合物进行，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。 可以在前体填充组合物中使用抑制剂组分，例如甲醇，以消除或最小化固化沟槽填充材料中的接缝形成。