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公开(公告)号：US20210062043A1
公开(公告)日：2021-03-04
申请号：US17009961
申请日：2020-09-02
Applicant: Cabot Microelectronics Corporation
Inventor： Sarah BROSNAN , Brian REISS
IPC: C09G1/02 , H01L21/321
Abstract: A chemical mechanical polishing composition for polishing a substrate having a polysilicon layer includes a water based liquid carrier, a silica abrasive, an amino acid or guanidine derivative containing polysilicon polishing accelerator, and an alkali metal salt. The composition includes less than about 500 ppm tetraalkylammonium salt and has a pH in a range from about 10 to about 11.
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公开(公告)号：US20160257856A1
公开(公告)日：2016-09-08
申请号：US14639564
申请日：2015-03-05
Applicant: Cabot Microelectronics Corporation
Inventor： Brian REISS , Dana SAUTER VAN NESS , Viet LAM , Alexander HAINS , Steven KRAFT , Renhe JIA
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , B24B37/20 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1409 , C09K3/1454 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/31053 , H01L21/3212
Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.
Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。
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公开(公告)号：US20180072916A1
公开(公告)日：2018-03-15
申请号：US15564605
申请日：2016-04-13
Applicant: Cabot Microelectronics Corporation
Inventor： Prativa PANDEY , Brian REISS , Michael WHITE
IPC: C09G1/02 , H01L21/306 , H01L21/321 , H01L21/768 , C09G1/04 , C09G1/06 , C09K3/14 , C09K13/06
CPC classification number: C09G1/02 , B24B37/044 , C09G1/04 , C09G1/06 , C09K3/1409 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/3212 , H01L21/76898
Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a sapphire substrate. The composition contains a diamond abrasive and a pH adjuster. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
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4.发明申请WET-PROCESS CERIA COMPOSITIONS FOR POLISHING SUBSTRATES, AND METHODS RELATED THERETO 有权用于抛光基材的湿法处理CERA组合物及其相关方法公开(公告)号：US20150102010A1
公开(公告)日：2015-04-16
申请号：US14050722
申请日：2013-10-10
Applicant: Cabot Microelectronics Corporation
Inventor： Brian REISS
Abstract: Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises wet-process ceria abrasive particles, (e.g., about 120 nm or less), at least one alcohol amine, at least one surfactant having at least one hydrophilic moiety and at least one hydrophobic moiety, the surfactant having a molecular weight of about 1000, and water, wherein the polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.
Abstract translation: 公开了化学机械抛光组合物和抛光基材的方法。 抛光组合物包括湿法二氧化铈磨料颗粒（例如，约120nm或更小），至少一种醇胺，至少一种具有至少一个亲水部分和至少一个疏水部分的表面活性剂，所述表面活性剂具有分子量 约1000，和水，其中抛光组合物具有约6的pH。抛光组合物可以用于例如抛光任何合适的基底，例如在半导体工业中使用的多晶硅晶片。
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5.发明申请SELECTIVE NITRIDE SLURRIES WITH IMPROVED STABILITY AND IMPROVED POLISHING CHARACTERISTICS 有权具有改进的稳定性和改进的抛光特性的选择性氮化物流公开(公告)号：US20170066102A1
公开(公告)日：2017-03-09
申请号：US14849066
申请日：2015-09-09
Applicant: Cabot Microelectronics Corporation
Inventor： Prativa PANDEY , Juyeon CHANG , Brian REISS
CPC classification number: B24B37/044 , C08K2003/2213 , C09G1/02
Abstract: The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition.
Abstract translation: 本发明提供一种化学机械抛光组合物，其包含，主要由...组成或由（a）约0.01wt。 ％至约1wt。 湿法二氧化铈的百分比，（b）约10ppm至约200ppm的包含季氨基的阳离子聚合物，（c）约10ppm至约2000ppm的非氟化非离子表面活性剂，（d）氨基酸 ，和（e）水，其中抛光组合物具有约3至约8的pH。本发明还提供了用抛光组合物抛光基材的方法。
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Patent Agency Ranking
公开(公告)号：US20150028254A1
公开(公告)日：2015-01-29
申请号：US14509081
申请日：2014-10-08
Applicant: Cabot Microelectronics Corporation
Inventor： Brian REISS , John CLARK , Lamon JONES , Jeffrey GILLILAND , Michael WHITE
IPC: C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/02024
Abstract: The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.
Abstract translation: 本发明提供一种抛光组合物，其包含（a）二氧化硅，（b）一种或多种增加硅去除速率的化合物，（c）一种或多种四烷基铵盐和（d）水，其中抛光组合物的pH为 约7至约11.本发明还提供了用抛光组合物抛光基材的方法。
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公开(公告)号：US20140191155A1
公开(公告)日：2014-07-10
申请号：US14209110
申请日：2014-03-13
Applicant: Cabot Microelectronics Corporation
Inventor： Brian REISS , Timothy JOHNS , Michael WHITE , Lamon JONES , John CLARK
IPC: C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/02024 , H01L21/3212
Abstract: The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.
Abstract translation: 本发明提供一种抛光组合物，其包含二氧化硅，氨基膦酸，多糖，四烷基铵盐，碳酸氢盐，唑环和水，其中抛光组合物的pH为约7至约11.本发明还提供了一种 用抛光组合物研磨衬底的方法。
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8.发明申请CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY 有权选择具有高去除率和低缺陷度的氧化物和硝酸盐的CMP组合物公开(公告)号：US20130244432A1
公开(公告)日：2013-09-19
申请号：US13799680
申请日：2013-03-13
Applicant: CABOT MICROELECTRONICS CORPORATION
Inventor： Brian REISS , Michael WILLHOFF , Daniel MATEJA
IPC: H01L21/306
CPC classification number: H01L21/30625 , C09G1/02 , C09K3/1463 , H01L21/31053
Abstract: The invention relates to a chemical-mechanical polishing composition comprising a ceria abrasive, cations of one or more lanthanide metals, one or more nonionic polymers, water, and optionally one or more additives. The invention further relates to a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises one or more of silicon oxide, silicon nitride, and polysilicon.
Abstract translation: 本发明涉及一种化学机械抛光组合物，其包含二氧化铈磨料，一种或多种镧系元素金属的阳离子，一种或多种非离子聚合物，水和任选的一种或多种添加剂。 本发明还涉及用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底包括氧化硅，氮化硅和多晶硅中的一种或多种。
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公开(公告)号：US20170044403A1
公开(公告)日：2017-02-16
申请号：US15338724
申请日：2016-10-31
Applicant: Cabot Microelectronics Corporation
Inventor： Brian REISS , Dana SAUTER VAN NESS , Viet LAM , Alexander HAINS , Steven KRAFT , Renhe JIA
IPC: C09G1/02 , B24B37/04 , H01L21/3105 , C09K3/14 , B24B37/20
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , B24B37/20 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1409 , C09K3/1454 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/31053 , H01L21/3212
Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.
Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。
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10.发明申请公开(公告)号：US20160257855A1
公开(公告)日：2016-09-08
申请号：US15056198
申请日：2016-02-29
Applicant: Cabot Microelectronics Corporation
Inventor： Brian REISS , Viet Lam , Renhe JIA
IPC: C09G1/02 , H01L21/306 , B24B37/04
CPC classification number: C09G1/02 , B24B37/044 , C01F17/0043 , C01P2002/82 , C01P2004/51 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C09K3/1409 , C09K3/1463 , H01L21/30625 , H01L21/31053
Abstract: The invention provides a chemical-mechanical polishing composition including wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, and an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon layer, with the polishing composition.
Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括中值粒度为约25nm至约150nm，粒度分布为约300nm以上的湿法二氧化铈颗粒和水性载体。 本发明还提供了一种抛光衬底，特别是包含硅层的衬底与抛光组合物的方法。
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