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    Thin film capacitors on silicon germanium substrate
    3.
    发明授权
    Thin film capacitors on silicon germanium substrate 有权
    硅锗基板上的薄膜电容器

    公开(公告)号：US06404003B1

    公开(公告)日：2002-06-11

    申请号：US09362480

    申请日：1999-07-28

    申请人： Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita ,  Masamichi Azuma

    发明人： Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita ,  Masamichi Azuma

    IPC分类号： H01L27108

    CPC分类号： C23C18/1216 ,  C23C18/1245 ,  C23C18/1279 ,  C23C18/1283 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

    摘要： An integrated circuit capacitor containing a thin film delectric metal oxide is formed above a silicon germanium substrate. A silicon nitride diffusion barrier layer is deposited on a silicon germanium substrate to prevent evaporation of the substrate in subsequent heating steps. A silicon dioxide stress reduction layer is deposited on the diffusion barrier layer. A bottom electrode is formed on the stress reduction layer, then a liquid precursor is spun on the bottom electrode, dried at about 400° C., and annealed at between 600° C. and 850° C. to form a BST capacitor dielectric. A top electrode is deposited on the dielectric and annealed. The integrated circuit may also include a BiCMOS device, a HBT device or a MOSFET.

    摘要翻译： 在硅锗基板上形成包含薄膜电介质金属氧化物的集成电路电容器。 在硅锗衬底上沉积氮化硅扩散阻挡层，以防止随后的加热步骤中衬底的蒸发。 二氧化硅应力降低层沉积在扩散阻挡层上。 在应力降低层上形成底部电极，然后在底部电极上旋转液体前体，在约400℃下干燥，并在600℃和850℃之间退火以形成BST电容器电介质。 顶部电极沉积在电介质上并退火。 集成电路还可以包括BiCMOS器件，HBT器件或MOSFET。

    Low temperature oxidizing method of making a layered superlattice material
    5.
    发明授权
    Low temperature oxidizing method of making a layered superlattice material 有权
    制作层状超晶格材料的低温氧化法

    公开(公告)号：US06582972B1

    公开(公告)日：2003-06-24

    申请号：US09544697

    申请日：2000-04-07

    申请人： Vikram Joshi ,  Jolanta Celinska ,  Narayan Solayappan ,  Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita

    发明人： Vikram Joshi ,  Jolanta Celinska ,  Narayan Solayappan ,  Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita

    IPC分类号： H01G2100

    CPC分类号： H01L27/11502 ,  C30B7/00 ,  C30B7/005 ,  C30B29/68 ,  H01L21/31691

    摘要： A thin film of precursor for forming a layered superlattice material is applied to an integrated circuit substrate, then a strong oxidizing agent is applied at low temperature in a range of from 100° C. to 300° C. to the precursor thin film, thereby forming a metal oxide thin film. The strong oxidizing agent may be liquid or gaseous. An example of a liquid strong oxidizing agent is hydrogen peroxide. An example of a gaseous strong oxidizing agent is ozone. The metal oxide thin film is crystallized by annealing at elevated temperature in a range of from 500° C. to 700° C., preferably not exceeding 650° C., for a time period in a range of from 30 minutes to two hours. Annealing is conducted in an oxygen-containing atmosphere, preferably including water vapor. Treatment by ultraviolet (UV) radiation may precede annealing. RTP in a range of from 500° C. to 700° C. may precede annealing.

    摘要翻译： 将用于形成层状超晶格材料的前体薄膜施加到集成电路基板上，然后在100℃至300℃的低温下向前体薄膜施加强氧化剂，由此 形成金属氧化物薄膜。 强氧化剂可以是液体或气体。 液体强氧化剂的实例是过氧化氢。 气态强氧化剂的实例是臭氧。 金属氧化物薄膜通过在500℃至700℃，优选不超过650℃的范围内的升高温度退火30分钟至2小时的时间段而结晶。 退火在含氧气氛中进行，优选包括水蒸气。 紫外线（UV）辐射处理可能退火之前。 可以在退火之前从500℃到700℃的范围内的RTP。

    Ferroelectric flat panel displays
    6.
    发明授权
    Ferroelectric flat panel displays 失效
    铁电平板显示屏

    公开(公告)号：US06198225B1

    公开(公告)日：2001-03-06

    申请号：US09326838

    申请日：1999-06-07

    申请人： Gota Kano ,  Yasuhiro Shimada ,  Shinichiro Hayashi ,  Koji Arita ,  Carlos A. Paz de Araujo ,  Joseph D. Cuchiaro ,  Larry D. McMillan

    发明人： Gota Kano ,  Yasuhiro Shimada ,  Shinichiro Hayashi ,  Koji Arita ,  Carlos A. Paz de Araujo ,  Joseph D. Cuchiaro ,  Larry D. McMillan

    IPC分类号： G09G310

    CPC分类号： G09G3/367 ,  G09G3/22 ,  H01J1/30 ,  H01J2201/306 ,  H01J2329/00

    摘要： A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one embodiment, a voltage pulse causes the layered superlattice material to emit electrons that impinge upon a phosphor, causing the phosphor to emit light. In another embodiment, an electric potential creates a remanent polarization in the layered superlattice material, which exerts an electric field in liquid crystal layer, thereby influencing the transmissivity of light through the liquid crystal. The layered superlattice material is a metal oxide formed using an inventive liquid precursor containing an alkoxycarboxylate. The thin film thickness is preferably in the range 50-140 nm, so that polarizabilty and transparency of the thin film is enhanced. A display element may comprise a varistor device to prevent cross-talk between pixels and to enable sudden polarization switching. A functional gradient in the ferroelectric thin film enhances electron emission. Two ferroelectric elements, one on either side of the phosphor may be used to enhance luminescence. A phosphor can be sandwiched between a dielectric and a ferroelectric to enhance emission.

    摘要翻译： 平板显示装置中的铁电层状超晶格材料薄膜被通电以选择性地影响显示图像。 在一个实施例中，电压脉冲使得层状超晶格材料发射撞击磷光体的电子，导致磷光体发光。 在另一个实施例中，电位在层状超晶格材料中产生剩余极化，其在液晶层中施加电场，从而影响透过液晶的透射率。 层状超晶格材料是使用本发明的含有烷氧基羧酸盐的液体前体形成的金属氧化物。 薄膜厚度优选在50-140nm的范围内，从而提高薄膜的极化性和透明度。 显示元件可以包括用于防止像素之间的串扰并允许突发极化切换的变阻器装置。 铁电薄膜中的功能梯度增强了电子发射。 可以使用两个铁电元件，一个在荧光体的两侧，以增强发光。 荧光体可以夹在电介质和铁电体之间以增强发射。

    Low imprint ferroelectric material for long retention memory and method of making the same
    8.
    发明授权
    Low imprint ferroelectric material for long retention memory and method of making the same 有权
    用于长保留记忆的低压刻铁电材料和制造相同的方法

    公开(公告)号：US06358758B2

    公开(公告)日：2002-03-19

    申请号：US09860386

    申请日：2001-05-19

    申请人： Koji Arita ,  Shinichiro Hayashi ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

    发明人： Koji Arita ,  Shinichiro Hayashi ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

    IPC分类号： H01L2100

    CPC分类号： H01L21/31691 ,  H01L27/10852

    摘要： A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.

    摘要翻译： 用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。 当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。 含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。

    Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material
    9.
    发明授权
    Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material 失效
    具有功能梯度材料的非易失性存储器应用的铁电场效应晶体管

    公开(公告)号：US06236076B1

    公开(公告)日：2001-05-22

    申请号：US09301867

    申请日：1999-04-29

    申请人： Koji Arita ,  Carlos A. Paz de Araujo

    发明人： Koji Arita ,  Carlos A. Paz de Araujo

    IPC分类号： H01L2976

    CPC分类号： H01L29/516 ,  H01L21/28291 ,  H01L28/56 ,  H01L29/78391

    摘要： A nonvolatile nondestructible read-out ferroelectric FET memory comprising a semiconductor substrate, a ferroelectric functional gradient material (“FGM”) thin film, and a gate electrode. In one basic embodiment, the ferroelectric FGM thin film contains a ferroelectric compound and a dielectric compound. The dielectric compound has a lower dielectric constant than the ferroelectric compound. There is a concentration gradient of the ferroelectric compound in the thin film. In a second basic embodiment, the FGM thin film is a functional gradient ferroelectric (“FGF”), in which compositional gradients of ferroelectric compounds result in unconventional hysteresis behavior. The unconventional hysteresis behavior of FGF thin films is elated to an enlarged memory window in ferroelectric FET memories. FGM thin films are preferably formed using a liquid source MOD methods, preferably a multisource CVD method.

    摘要翻译： 包括半导体衬底，铁电功能梯度材料（“FGM”）薄膜和栅电极的非易失性非破坏性读出型铁电FET存储器。 在一个基本实施例中，铁电FGM薄膜含有铁电化合物和电介质化合物。 电介质化合物的介电常数比铁电化合物低。 在薄膜中存在铁电化合物的浓度梯度。 在第二基本实施例中，FGM薄膜是功能梯度铁电（“FGF”），其中铁电化合物的组成梯度导致非常规的滞后行为。 FGF薄膜的非常规滞后行为被激发到铁电FET存储器中的扩大的存储窗口。 FGM薄膜优选使用液体源MOD方法，优选多源CVD方法形成。

    Low imprint ferroelectric material for long retention memory and method of making the same
    10.
    发明授权
    Low imprint ferroelectric material for long retention memory and method of making the same 有权
    用于长保留记忆的低压刻铁电材料和制造相同的方法

    公开(公告)号：US06281534B1

    公开(公告)日：2001-08-28

    申请号：US09170417

    申请日：1998-10-13

    申请人： Koji Arita ,  Shinichiro Hayashi ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

    发明人： Koji Arita ,  Shinichiro Hayashi ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

    IPC分类号： H01L2976

    CPC分类号： H01L21/31691 ,  H01L27/10852

    摘要： A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.

    摘要翻译： 用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。 当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。 含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。