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    Low imprint ferroelectric material for long retention memory and method of making the same
    3.
    发明授权
    Low imprint ferroelectric material for long retention memory and method of making the same 有权
    用于长保留记忆的低压刻铁电材料和制造相同的方法

    公开(公告)号：US06358758B2

    公开(公告)日：2002-03-19

    申请号：US09860386

    申请日：2001-05-19

    申请人： Koji Arita ,  Shinichiro Hayashi ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

    发明人： Koji Arita ,  Shinichiro Hayashi ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

    IPC分类号： H01L2100

    CPC分类号： H01L21/31691 ,  H01L27/10852

    摘要： A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.

    摘要翻译： 用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。 当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。 含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。

    Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material
    4.
    发明授权
    Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material 失效
    具有功能梯度材料的非易失性存储器应用的铁电场效应晶体管

    公开(公告)号：US06236076B1

    公开(公告)日：2001-05-22

    申请号：US09301867

    申请日：1999-04-29

    申请人： Koji Arita ,  Carlos A. Paz de Araujo

    发明人： Koji Arita ,  Carlos A. Paz de Araujo

    IPC分类号： H01L2976

    CPC分类号： H01L29/516 ,  H01L21/28291 ,  H01L28/56 ,  H01L29/78391

    摘要： A nonvolatile nondestructible read-out ferroelectric FET memory comprising a semiconductor substrate, a ferroelectric functional gradient material (“FGM”) thin film, and a gate electrode. In one basic embodiment, the ferroelectric FGM thin film contains a ferroelectric compound and a dielectric compound. The dielectric compound has a lower dielectric constant than the ferroelectric compound. There is a concentration gradient of the ferroelectric compound in the thin film. In a second basic embodiment, the FGM thin film is a functional gradient ferroelectric (“FGF”), in which compositional gradients of ferroelectric compounds result in unconventional hysteresis behavior. The unconventional hysteresis behavior of FGF thin films is elated to an enlarged memory window in ferroelectric FET memories. FGM thin films are preferably formed using a liquid source MOD methods, preferably a multisource CVD method.

    摘要翻译： 包括半导体衬底，铁电功能梯度材料（“FGM”）薄膜和栅电极的非易失性非破坏性读出型铁电FET存储器。 在一个基本实施例中，铁电FGM薄膜含有铁电化合物和电介质化合物。 电介质化合物的介电常数比铁电化合物低。 在薄膜中存在铁电化合物的浓度梯度。 在第二基本实施例中，FGM薄膜是功能梯度铁电（“FGF”），其中铁电化合物的组成梯度导致非常规的滞后行为。 FGF薄膜的非常规滞后行为被激发到铁电FET存储器中的扩大的存储窗口。 FGM薄膜优选使用液体源MOD方法，优选多源CVD方法形成。

    Thin film capacitors on silicon germanium substrate
    6.
    发明授权
    Thin film capacitors on silicon germanium substrate 有权
    硅锗基板上的薄膜电容器

    公开(公告)号：US06404003B1

    公开(公告)日：2002-06-11

    申请号：US09362480

    申请日：1999-07-28

    申请人： Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita ,  Masamichi Azuma

    发明人： Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita ,  Masamichi Azuma

    IPC分类号： H01L27108

    CPC分类号： C23C18/1216 ,  C23C18/1245 ,  C23C18/1279 ,  C23C18/1283 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

    摘要： An integrated circuit capacitor containing a thin film delectric metal oxide is formed above a silicon germanium substrate. A silicon nitride diffusion barrier layer is deposited on a silicon germanium substrate to prevent evaporation of the substrate in subsequent heating steps. A silicon dioxide stress reduction layer is deposited on the diffusion barrier layer. A bottom electrode is formed on the stress reduction layer, then a liquid precursor is spun on the bottom electrode, dried at about 400° C., and annealed at between 600° C. and 850° C. to form a BST capacitor dielectric. A top electrode is deposited on the dielectric and annealed. The integrated circuit may also include a BiCMOS device, a HBT device or a MOSFET.

    摘要翻译： 在硅锗基板上形成包含薄膜电介质金属氧化物的集成电路电容器。 在硅锗衬底上沉积氮化硅扩散阻挡层，以防止随后的加热步骤中衬底的蒸发。 二氧化硅应力降低层沉积在扩散阻挡层上。 在应力降低层上形成底部电极，然后在底部电极上旋转液体前体，在约400℃下干燥，并在600℃和850℃之间退火以形成BST电容器电介质。 顶部电极沉积在电介质上并退火。 集成电路还可以包括BiCMOS器件，HBT器件或MOSFET。

    Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor
    7.
    发明授权
    Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor 失效
    具有由液体前体形成的界面绝缘体的铁电场效应晶体管的制造方法

    公开(公告)号：US06255121B1

    公开(公告)日：2001-07-03

    申请号：US09258489

    申请日：1999-02-26

    申请人： Koji Arita ,  Shinichiro Hayashi ,  Tatsuo Otsuki ,  Carlos A. Paz de Araujo

    发明人： Koji Arita ,  Shinichiro Hayashi ,  Tatsuo Otsuki ,  Carlos A. Paz de Araujo

    IPC分类号： H01L2100

    CPC分类号： H01L28/56 ,  H01L21/28291 ,  H01L29/516 ,  H01L29/78391

    摘要： A method for forming an interface insulator layer in a ferroelectric FET memory, in which a liquid precursor is applied to a semiconductor substrate. Preferably, the liquid precursor is an enhanced metalorganic decomposition (“EMOD”) precursor, applied using a liquid-source misted deposition technique. Preferably, the EMOD precursor solution applied to the substrate contains metal ethylhexanoates containing metal moieties in relative molar proportions for forming an interface insulator layer containing ZrO2, CeO2, Y2O3 or (Ce1-xZrx)O2, wherein 0≦x≦1.

    摘要翻译： 一种用于在铁电FET存储器中形成界面绝缘体层的方法，其中将液体前体施加到半导体衬底。 优选地，液体前体是使用液体源雾化沉积技术施加的增强的金属有机分解（“EMOD”）前体。 优选地，施加到基底上的EMOD前体溶液含有相对摩尔比例含有金属部分的金属乙基己酸，以形成含有ZrO 2，CeO 2，Y 2 O 3或（Ce 1-x Zr x）O 2的界面绝缘体层，其中0≤x≤1。

    Ferroelectric field effect transistor having a gate electrode being electrically connected to the bottom electrode of a ferroelectric capacitor
    8.
    发明授权
    Ferroelectric field effect transistor having a gate electrode being electrically connected to the bottom electrode of a ferroelectric capacitor 有权
    铁电场效应晶体管，其栅电极与铁电电容器的底电极电连接

    公开(公告)号：US6140672A

    公开(公告)日：2000-10-31

    申请号：US263639

    申请日：1999-03-05

    申请人： Koji Arita ,  Carlos A. Paz de Araujo

    发明人： Koji Arita ,  Carlos A. Paz de Araujo

    IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/76

    CPC分类号： H01L27/1159 ,  H01L21/76895 ,  H01L27/11502 ,  H01L27/11585 ,  H01L28/55

    摘要： A ferroelectric non-volatile memory in which each memory cell consists of a metal-ferroelectric-metal ("MFM") capacitor and a FET on a semiconductor substrate. The MFM and the FET are separated by an interlayer dielectric layer. A local interconnect connects the gate electrode of the FET to the bottom electrode of the MFM capacitor. Preferably, the MFM is located directly above the gate electrode, and the local interconnect is a conductive plug in a filled via. Preferably, the ferroelectric thin film of the MFM comprises a layered superlattice material. Preferably, a dielectric metal oxide insulator layer is located between the gate electrode and the semiconductor substrate.

    摘要翻译： 一种铁电非易失性存储器，其中每个存储单元由金属铁电金属（“MFM”）电容器和半导体衬底上的FET组成。 MFM和FET由层间介质层分开。 局部互连将FET的栅极电极连接到MFM电容器的底部电极。 优选地，MFM位于栅电极的正上方，并且局部互连是填充通孔中的导电插塞。 优选地，MFM的铁电薄膜包括层状超晶格材料。 优选地，介电金属氧化物绝缘体层位于栅极和半导体衬底之间。

    Low temperature oxidizing method of making a layered superlattice material
    9.
    发明授权
    Low temperature oxidizing method of making a layered superlattice material 有权
    制作层状超晶格材料的低温氧化法

    公开(公告)号：US06582972B1

    公开(公告)日：2003-06-24

    申请号：US09544697

    申请日：2000-04-07

    申请人： Vikram Joshi ,  Jolanta Celinska ,  Narayan Solayappan ,  Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita

    发明人： Vikram Joshi ,  Jolanta Celinska ,  Narayan Solayappan ,  Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita

    IPC分类号： H01G2100

    CPC分类号： H01L27/11502 ,  C30B7/00 ,  C30B7/005 ,  C30B29/68 ,  H01L21/31691

    摘要： A thin film of precursor for forming a layered superlattice material is applied to an integrated circuit substrate, then a strong oxidizing agent is applied at low temperature in a range of from 100° C. to 300° C. to the precursor thin film, thereby forming a metal oxide thin film. The strong oxidizing agent may be liquid or gaseous. An example of a liquid strong oxidizing agent is hydrogen peroxide. An example of a gaseous strong oxidizing agent is ozone. The metal oxide thin film is crystallized by annealing at elevated temperature in a range of from 500° C. to 700° C., preferably not exceeding 650° C., for a time period in a range of from 30 minutes to two hours. Annealing is conducted in an oxygen-containing atmosphere, preferably including water vapor. Treatment by ultraviolet (UV) radiation may precede annealing. RTP in a range of from 500° C. to 700° C. may precede annealing.

    摘要翻译： 将用于形成层状超晶格材料的前体薄膜施加到集成电路基板上，然后在100℃至300℃的低温下向前体薄膜施加强氧化剂，由此 形成金属氧化物薄膜。 强氧化剂可以是液体或气体。 液体强氧化剂的实例是过氧化氢。 气态强氧化剂的实例是臭氧。 金属氧化物薄膜通过在500℃至700℃，优选不超过650℃的范围内的升高温度退火30分钟至2小时的时间段而结晶。 退火在含氧气氛中进行，优选包括水蒸气。 紫外线（UV）辐射处理可能退火之前。 可以在退火之前从500℃到700℃的范围内的RTP。