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    INTERACTION STRUCTURE FOR A STORAGE MEDIUM
    1.
    发明申请
    INTERACTION STRUCTURE FOR A STORAGE MEDIUM 审中-公开
    存储介质的交互结构

    公开(公告)号：US20130001719A1

    公开(公告)日：2013-01-03

    申请号：US13612575

    申请日：2012-09-12

    申请人： Caterina Riva ,  Bruno Murari ,  Giovanni Frattini

    发明人： Caterina Riva ,  Bruno Murari ,  Giovanni Frattini

    IPC分类号： H01L29/82

    CPC分类号： G11B9/1409 ,  B82Y10/00 ,  G11B9/14

    摘要： A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing a conductive portion having a deposition thickness substantially matching the sub-lithographic dimension on the side wall; and then defining the conductive portion. The sub-lithographic dimension preferably is between 1 and 50 nm, more preferably 20 nm.

    摘要翻译： 过程制造存储介质的交互结构。 该方法包括形成具有具有亚光刻尺寸的第一导电区域的第一相互作用头。 形成第一相互作用头的步骤包括：在表面上形成具有侧壁的第一划界区域; 沉积具有基本上与侧壁上的亚光刻尺寸匹配的沉积厚度的导电部分; 然后限定导电部分。 亚光刻尺寸优选在1至50nm之间，更优选20nm。

    Process for manufacturing an interaction structure for a storage medium
    2.
    发明授权
    Process for manufacturing an interaction structure for a storage medium 有权
    用于制造存储介质的相互作用结构的方法

    公开(公告)号：US08287746B2

    公开(公告)日：2012-10-16

    申请号：US12246384

    申请日：2008-10-06

    申请人： Caterina Riva ,  Bruno Murari ,  Giovanni Frattini

    发明人： Caterina Riva ,  Bruno Murari ,  Giovanni Frattini

    IPC分类号： H01B13/00

    CPC分类号： G11B9/1409 ,  B82Y10/00 ,  G11B9/14

    摘要： A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing a conductive portion having a deposition thickness substantially matching the sub-lithographic dimension on the side wall; and then defining the conductive portion. The sub-lithographic dimension preferably is between 1 and 50 nm, more preferably 20 nm.

    摘要翻译： 过程制造存储介质的交互结构。 该方法包括形成具有具有亚光刻尺寸的第一导电区域的第一相互作用头。 形成第一相互作用头的步骤包括：在表面上形成具有侧壁的第一划界区域; 沉积具有基本上与侧壁上的亚光刻尺寸匹配的沉积厚度的导电部分; 然后限定导电部分。 亚光刻尺寸优选在1至50nm之间，更优选20nm。

    PROCESS FOR MANUFACTURING AN INTERACTION STRUCTURE FOR A STORAGE MEDIUM
    3.
    发明申请
    PROCESS FOR MANUFACTURING AN INTERACTION STRUCTURE FOR A STORAGE MEDIUM 有权
    用于制造存储介质的交互结构的过程

    公开(公告)号：US20090095705A1

    公开(公告)日：2009-04-16

    申请号：US12246384

    申请日：2008-10-06

    申请人： Caterina Riva ,  Bruno Murari ,  Giovanni Frattini

    发明人： Caterina Riva ,  Bruno Murari ,  Giovanni Frattini

    IPC分类号： B44C1/22

    CPC分类号： G11B9/1409 ,  B82Y10/00 ,  G11B9/14

    摘要： A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing a conductive portion having a deposition thickness substantially matching the sub-lithographic dimension on the side wall; and then defining the conductive portion. The sub-lithographic dimension preferably is between 1 and 50 nm, more preferably 20 nm.

    摘要翻译： 过程制造存储介质的交互结构。 该方法包括形成具有具有亚光刻尺寸的第一导电区域的第一相互作用头。 形成第一相互作用头的步骤包括：在表面上形成具有侧壁的第一划界区域; 沉积具有基本上与侧壁上的亚光刻尺寸匹配的沉积厚度的导电部分; 然后限定导电部分。 亚光刻尺寸优选在1至50nm之间，更优选20nm。

    Portable apparatus with an accelerometer device for free-fall detection
    7.
    发明授权
    Portable apparatus with an accelerometer device for free-fall detection 有权
    带有加速度计装置的便携式装置，用于自由落体检测

    公开(公告)号：US07578184B2

    公开(公告)日：2009-08-25

    申请号：US11302486

    申请日：2005-12-12

    申请人： Luca Fontanella ,  Benedetto Vigna ,  Ernesto Lasalandra ,  Caterina Riva

    发明人： Luca Fontanella ,  Benedetto Vigna ,  Ernesto Lasalandra ,  Caterina Riva

    IPC分类号： G01P15/00

    CPC分类号： G11B19/04 ,  G01P15/0891 ,  G01P15/18

    摘要： A portable apparatus having an accelerometer device and a supporting element in the accelerometer device, having a first body of semiconductor material integrating a sensor element that detects movements of the first body and generates a signal correlated to the detected movement; a second body of semiconductor material that integrates a conditioning electronics and that is electrically connected to the first body; and conductive bumps that provide electrical connection of the first and second bodies to the supporting element. In particular, the conductive bumps connect the first and second bodies to the supporting element without the interposition of any packaging.

    摘要翻译： 一种在加速度计装置中具有加速度计装置和支撑元件的便携式装置，具有集成传感器元件的第一体半导体材料，该传感器元件检测第一主体的运动并产生与检测到的运动相关的信号; 第二体半导体材料，其集成了调节电子器件，并且电连接到第一主体; 以及提供第一和第二主体到支撑元件的电连接的导电凸块。 特别地，导电凸块将第一和第二主体连接到支撑元件，而不插入任何包装。

    PROCESS FOR MANUFACTURING A MICROELECTROMECHANICAL INTERACTION SYSTEM FOR A STORAGE MEDIUM
    8.
    发明申请
    PROCESS FOR MANUFACTURING A MICROELECTROMECHANICAL INTERACTION SYSTEM FOR A STORAGE MEDIUM 审中-公开
    用于制造存储介质的微电子交互系统的方法

    公开(公告)号：US20080164576A1

    公开(公告)日：2008-07-10

    申请号：US11958945

    申请日：2007-12-18

    申请人： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

    发明人： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

    IPC分类号： H01L21/04 ,  H01L29/06

    CPC分类号： B81C1/00539 ,  B81B2201/038 ,  B81B2201/07 ,  B81B2201/12 ,  B81B2203/0118 ,  B81B2203/019 ,  B81C1/00595 ,  B81C2201/0136 ,  B81C2203/0714 ,  H01L27/10

    摘要： A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

    摘要翻译： 一种用于制造用于存储介质的微机电类型的相互作用系统的方法，具有支撑元件的相互作用系统和由支撑元件承载的相互作用元件，其设想是提供具有基板的半导体材料晶片，其具有 第一类电导率（P）和顶面; 在所述顶表面附近的所述衬底的表面部分中形成具有与所述第一类型的导电性（P）相反的第二导电类型（N）的第一相互作用区域; 并且从顶表面开始进行基板的电化学蚀刻，所述蚀刻相对于所述第二导电类型（N）是选择性的，以便移除所述基板的表面部分并将所述第一相互作用区域与所述基板分离 ，从而形成支撑元件。

    ASSEMBLY OF AN INTEGRATED DEVICE ENABLING A FACILITATED FLUIDIC CONNECTION TO REGIONS OF THE DEVICE
    9.
    发明申请
    ASSEMBLY OF AN INTEGRATED DEVICE ENABLING A FACILITATED FLUIDIC CONNECTION TO REGIONS OF THE DEVICE 有权
    集成装置的装配使得装置的区域的流体流动连接

    公开(公告)号：US20080011090A1

    公开(公告)日：2008-01-17

    申请号：US11768090

    申请日：2007-06-25

    申请人： Federico Giovanni Ziglioli ,  Chantal Combi ,  Lorenzo Baldo ,  Caterina Riva ,  Mark Andrew Shaw

    发明人： Federico Giovanni Ziglioli ,  Chantal Combi ,  Lorenzo Baldo ,  Caterina Riva ,  Mark Andrew Shaw

    IPC分类号： G01L9/00

    CPC分类号： G01L19/0038

    摘要： Described herein is an assembly of an integrated device and of a cap coupled to the integrated device; the integrated device is provided with at least a first and a second region to be fluidically accessed from outside, and the cap has an outer portion provided with at least a first and a second inlet port in fluid communication with the first and second regions. In particular, the first and second regions are arranged on a first outer face, or on respective adjacent outer faces, of the integrated device, and an interface structure is set between the integrated device and the outer portion of the cap, and is provided with a channel arrangement for routing the first and second regions towards the first and second inlets.

    摘要翻译： 这里描述的是集成装置和联接到集成装置的盖的组件; 集成装置设置有至少第一和第二区域以从外部流体地访问，并且帽具有至少设置有与第一和第二区域流体连通的第一入口和第二入口的外部。 特别地，第一和第二区域布置在集成装置的第一外表面或相应的相邻外表面上，并且界面结构设置在集成装置和盖的外部之间，并且设置有 用于将第一和第二区域朝向第一和第二入口路由的通道布置。

    Integrated magnetic sensor for detecting horizontal magnetic fields and manufacturing process thereof
    10.
    发明授权
    Integrated magnetic sensor for detecting horizontal magnetic fields and manufacturing process thereof 有权
    用于检测水平磁场的集成磁传感器及其制造工艺

    公开(公告)号：US08633688B2

    公开(公告)日：2014-01-21

    申请号：US12957175

    申请日：2010-11-30

    申请人： Dario Paci ,  Paolo Iuliano ,  Caterina Riva ,  Marco Morelli

    发明人： Dario Paci ,  Paolo Iuliano ,  Caterina Riva ,  Marco Morelli

    IPC分类号： G01R33/02

    CPC分类号： G01R33/04 ,  G01R33/0005 ,  G01R33/0047 ,  G01R33/0052 ,  G01R33/072

    摘要： The integrated magnetic sensor for detecting an external magnetic field, is formed by a body of semiconductor material having a surface; an insulating layer covering the body of semiconductor material; a magnetically sensitive region, for example a Hall cell, extending inside the body; and a concentrator of ferromagnetic material, extending on the Hall cell and having a planar portion extending parallel to the surface of the substrate on the insulating layer. The concentrator terminates with a tip protruding peripherally from, and transversely to, the planar portion toward the Hall cell. When the magnetically sensitive region is a sensing coil of a fluxgate sensor, it is formed on the substrate, embedded in the insulating layer, and the tip of the concentrator can reach as far as the sensing coil.

    摘要翻译： 用于检测外部磁场的集成磁传感器由具有表面的半导体材料体形成; 覆盖半导体材料体的绝缘层; 在身体内延伸的磁敏感区域，例如霍尔室; 以及在霍尔单元上延伸并且具有在绝缘层上平行于衬底的表面延伸的平面部分的铁磁材料的集中器。 集中器终止于朝向霍尔单元的平面部分周向地突出并且横向于平面部分突出的尖端。 当磁敏感区域是磁通门传感器的感测线圈时，它形成在衬底上，嵌入在绝缘层中，并且集中器的尖端可以达到传感线圈的距离。