公开(公告)号：US20070020953A1

公开(公告)日：2007-01-25

申请号：US11186353

申请日：2005-07-21

申请人： Cheng-Yuan Tsai ,  Chih-Lung Lin ,  You-Hua Chou

发明人： Cheng-Yuan Tsai ,  Chih-Lung Lin ,  You-Hua Chou

IPC分类号： H01L21/31 ,  C23C8/00 ,  H01L21/469

CPC分类号： H01L21/31612 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76801

摘要： A method for forming a high density dielectric film by chemical vapor deposition. The method comprises: (a) a substrate is provided in a processing chamber; (b) a first gas is introduced into the processing chamber with a first pressure and adsorbed on the substrate, wherein the first gas comprises silicon-containing or carbon-containing gas; (c) the first gas is stopped, and the first pressure is lowered to a second pressure; (d) a second gas is introduced into the processing chamber with a third pressure, and forced to react with the first gas absorbed on the substrate and remained in the processing chamber, wherein the second gas comprises oxidizer or reduction agent; (e) the steps (b)˜(d) are repeated until a high density dielectric film is formed on the substrate.

摘要翻译： 一种通过化学气相沉积法形成高密度电介质膜的方法。 该方法包括：（a）在处理室中设置基板; （b）第一气体以第一压力被引入处理室并吸附在衬底上，其中第一气体包含含硅或含碳气体; （c）第一气体停止，第一压力降低到第二压力; （d）第二气体以第三压力被引入处理室，并被迫与吸收在基板上的第一气体反应并保留在处理室中，其中第二气体包括氧化剂或还原剂; （e）重复步骤（b）〜（d），直到在基板上形成高密度电介质膜。

公开(公告)号：US07226875B2

公开(公告)日：2007-06-05

申请号：US10999547

申请日：2004-11-30

申请人： Cheng-Yuan Tsai ,  You-Hua Chou ,  Chih-Lung Lin

发明人： Cheng-Yuan Tsai ,  You-Hua Chou ,  Chih-Lung Lin

IPC分类号： H01L21/316 ,  H01L21/473

CPC分类号： H01L21/76801 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/31629 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH3), for example. The gas forms reactive hydrogen species which removes fluorine radicals and reactive phosphorous species which forms a moisture-gettering and ion-gettering phosphorious oxide film the layer.

摘要翻译： 公开了一种提高氟化硅玻璃层的稳定性的方法。 将设置在基板上的氟化硅玻璃层例如经受含磷和含氢气体如磷化氢（PH 3 N 3）。 气体形成反应性氢物质，其去除氟自由基和反应性磷物质，其形成吸湿和吸除离子的氧化磷膜。

公开(公告)号：US20050282350A1

公开(公告)日：2005-12-22

申请号：US10873505

申请日：2004-06-22

申请人： You-Hua Chou ,  Joung-Wei Liou ,  Kuang-Yuan Hsu ,  Chih-Lung Lin ,  Cheng-Yuan Tsai

发明人： You-Hua Chou ,  Joung-Wei Liou ,  Kuang-Yuan Hsu ,  Chih-Lung Lin ,  Cheng-Yuan Tsai

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/76 ,  H01L21/768 ,  H01L21/8238

CPC分类号： H01L21/76837 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31625 ,  H01L21/76832 ,  H01L21/823878

摘要： A method is provided for filling a trench or gap between a pair of semiconductor devices formed above a substrate. A liner is applied in a trench or gap between a pair of devices by atomic layer deposition to partially fill the trench or gap. The trench or gap is filled by a bulk fill process.

摘要翻译： 提供了一种用于填充形成在衬底上方的一对半导体器件之间的沟槽或间隙的方法。 通过原子层沉积将衬垫施加在一对器件之间的沟槽或间隙中，以部分填充沟槽或间隙。 沟槽或间隙通过填充过程填充。

公开(公告)号：US20060115996A1

公开(公告)日：2006-06-01

申请号：US10999547

申请日：2004-11-30

申请人： Cheng-Yuan Tsai ,  You-Hua Chou ,  Chih-Lung Lin

发明人： Cheng-Yuan Tsai ,  You-Hua Chou ,  Chih-Lung Lin

IPC分类号： H01L21/31 ,  H01L21/302 ,  H01L21/4763

CPC分类号： H01L21/76801 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/31629 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH3), for example. The gas forms reactive hydrogen species which removes fluorine radicals and reactive phosphorous species which forms a moisture-gettering and ion-gettering phosphorious oxide film the layer.

摘要翻译： 公开了一种提高氟化硅玻璃层的稳定性的方法。 将设置在基板上的氟化硅玻璃层例如经受含磷和含氢气体如磷化氢（PH 3 N 3）。 气体形成反应性氢物质，其去除氟自由基和反应性磷物质，其形成吸湿和吸除离子的氧化磷膜。

公开(公告)号：US07314838B2

公开(公告)日：2008-01-01

申请号：US11186353

申请日：2005-07-21

申请人： Cheng-Yuan Tsai ,  Chih-Lung Lin ,  You-Hua Chou

发明人： Cheng-Yuan Tsai ,  Chih-Lung Lin ,  You-Hua Chou

IPC分类号： H01L21/00

CPC分类号： H01L21/31612 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76801

摘要： A method for forming a high density dielectric film by chemical vapor deposition. The method comprises: (a) a substrate is provided in a processing chamber; (b) a first gas is introduced into the processing chamber with a first pressure and adsorbed on the substrate, wherein the first gas comprises silicon-containing or carbon-containing gas; (c) the first gas is stopped, and the first pressure is lowered to a second pressure; (d) a second gas is introduced into the processing chamber with a third pressure, and forced to react with the first gas absorbed on the substrate and remained in the processing chamber, wherein the second gas comprises oxidizer or reduction agent; (e) the steps (b)˜(d) are repeated until a high density dielectric film is formed on the substrate.

摘要翻译： 一种通过化学气相沉积法形成高密度电介质膜的方法。 该方法包括：（a）在处理室中设置基板; （b）第一气体以第一压力被引入处理室并吸附在衬底上，其中第一气体包含含硅或含碳气体; （c）第一气体停止，第一压力降低到第二压力; （d）第二气体以第三压力被引入处理室，并被迫与吸收在基板上的第一气体反应并保留在处理室中，其中第二气体包括氧化剂或还原剂; （e）重复步骤（b）〜（d），直到在基板上形成高密度电介质膜。

公开(公告)号：US20060148192A1

公开(公告)日：2006-07-06

申请号：US11029727

申请日：2005-01-04

申请人： You-Hua Chou ,  Ling-Sung Wang ,  Chih-Lung Lin ,  Tsung-Jen Shih ,  Ying-Lang Wang

发明人： You-Hua Chou ,  Ling-Sung Wang ,  Chih-Lung Lin ,  Tsung-Jen Shih ,  Ying-Lang Wang

IPC分类号： H01L21/20 ,  H01L21/8242

CPC分类号： H01L23/5223 ,  H01L21/02131 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/31683 ,  H01L21/3211 ,  H01L23/53238 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A self aligned MIM capacitor structure and method for forming the same, the method including forming a metal filled damascene having an exposed surface in a dielectric insulating layer; forming a metal precursor layer on the exposed surface; carrying out a process on the metal precursor layer selected from the group consisting of oxidation and nitridation to form a capacitor dielectric portion; and, forming a conductive electrode on the capacitor dielectric portion.

摘要翻译： 一种自对准MIM电容器结构及其形成方法，所述方法包括在电介质绝缘层中形成具有暴露表面的金属填充镶嵌层; 在所述暴露表面上形成金属前体层; 对选自氧化和氮化的金属前体层进行工艺以形成电容器电介质部分; 并且在电容器电介质部分上形成导电电极。

公开(公告)号：US09982340B2

公开(公告)日：2018-05-29

申请号：US13439127

申请日：2012-04-04

申请人： Chih-Tsung Lee ,  Hung Jui Chang ,  You-Hua Chou ,  Shiu-Ko Jangjian ,  Chung-En Kao ,  Ming-Chin Tsai ,  Huan-Wen Lai

发明人： Chih-Tsung Lee ,  Hung Jui Chang ,  You-Hua Chou ,  Shiu-Ko Jangjian ,  Chung-En Kao ,  Ming-Chin Tsai ,  Huan-Wen Lai

IPC分类号： C23C16/44 ,  C23C16/30 ,  C23C16/509 ,  H01J37/32

CPC分类号： C23C16/4412 ,  C23C16/308 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244

摘要： An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.

公开(公告)号：US09093252B2

公开(公告)日：2015-07-28

申请号：US13397957

申请日：2012-02-16

申请人： Bo-Hung Lin ,  Ming-Chih Tsai ,  You-Hua Chou ,  Chung-En Kao

发明人： Bo-Hung Lin ,  Ming-Chih Tsai ,  You-Hua Chou ,  Chung-En Kao

IPC分类号： C23C14/35 ,  H01J37/34 ,  H01J37/32

CPC分类号： C23C14/351 ,  C23C14/35 ,  H01J37/32669 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461

摘要： In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

摘要翻译： 在一些实施例中，本公开涉及等离子体处理系统，其包括被配置为通过振动和旋转运动的组合提供对称磁轨的磁控管。 所公开的磁控管包括被配置为产生磁场的磁性元件。 磁性元件附接到连接在磁性元件和旋转轴之间的弹性元件，该旋转轴构造成围绕溅射靶的中心旋转磁性元件。 弹性元件构造成在磁性元件的旋转期间改变其长度以改变旋转轴和磁性元件之间的径向距离。 由此产生的磁道能够使磁性元件在角度方向和径向方向上同时运动。 这样的运动能够提供良好的晶片均匀性和较短的沉积时间的对称磁迹。

公开(公告)号：US08953298B2

公开(公告)日：2015-02-10

申请号：US13307089

申请日：2011-11-30

申请人： Chung-En Kao ,  You-Hua Chou ,  Chih-Tsung Lee ,  Ming-Shiou Kuo

发明人： Chung-En Kao ,  You-Hua Chou ,  Chih-Tsung Lee ,  Ming-Shiou Kuo

IPC分类号： H01L21/683 ,  H01T23/00

CPC分类号： H01L21/6831 ,  H01L21/67742

摘要： A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment.

摘要翻译： 工件传送系统具有多个具有轴承和初级和次级变压器线圈的接头，其中提供给每个接头的初级变压器线圈和次级变压器线圈的功率在相应接头的主变压器线圈和次级变压器线圈之间产生互感。 第一对臂通过第一对接头可旋转地联接到叶片，其中第一对接头中的每一个的主变压器线圈可操作地耦合到第一对臂，并且每个臂的次级变压器线圈 第一对接头可操作地联接到叶片和位于叶片的介电工件保持表面下方的电极。 电极通过接头的变压器线圈非接触地通电，并且刀片可以通过反向电流方向和电压调节来夹紧和去夹紧工件。

公开(公告)号：US08692299B2

公开(公告)日：2014-04-08

申请号：US13594254

申请日：2012-08-24

申请人： Min Hao Hong ,  You-Hua Chou ,  Chih-Tsung Lee ,  Shiu-Ko JangJian ,  Miao-Cheng Liao ,  Hsiang Hsiang Ko ,  Chen-Ming Huang

发明人： Min Hao Hong ,  You-Hua Chou ,  Chih-Tsung Lee ,  Shiu-Ko JangJian ,  Miao-Cheng Liao ,  Hsiang Hsiang Ko ,  Chen-Ming Huang

IPC分类号： H01L27/085

CPC分类号： H01L21/76224 ,  H01L21/02538 ,  H01L21/02609 ,  H01L21/0334 ,  H01L21/31053 ,  H01L21/762 ,  H01L21/76232 ,  H01L21/823412 ,  H01L21/823481 ,  H01L29/0653 ,  H01L29/66477 ,  H01L29/66651 ,  H01L29/78

摘要： An integrated circuit device and a process for making the integrated circuit device. The integrated circuit device including a substrate having a trench formed therein, a first layer of isolation material occupying the trench, a second layer of isolation material formed over the first layer of isolation material, an epitaxially-grown silicon layer on the substrate and horizontally adjacent the second layer of isolation material, and a gate structure formed on the epitaxially-grown silicon, the gate structure defining a channel.

摘要翻译： 集成电路器件和用于制造集成电路器件的工艺。 集成电路器件包括其中形成有沟槽的衬底，占据沟槽的隔离材料的第一层，在第一隔离材料层上形成的隔离材料的第二层，衬底上的外延生长的硅层，并且水平相邻 第二层隔离材料，以及形成在外延生长的硅上的栅极结构，栅极结构限定沟道。