Current-to-voltage converter with highpass filter function
    1.
    发明授权
    Current-to-voltage converter with highpass filter function 失效
    具有高通滤波器功能的电流 - 电压转换器

    公开(公告)号:US5952885A

    公开(公告)日:1999-09-14

    申请号:US964728

    申请日:1997-11-05

    IPC分类号: H03F3/08 H03H11/12 H03F1/34

    CPC分类号: H03H11/1217 H03F3/087

    摘要: A current-to-voltage converter with highpass filter function constructed according to the present invention contains two operational amplifiers OP1 and OP2, two resistors R.sub.1 and R.sub.2, and a capacitor C.sub.1. The noninverting (+) terminal of the operational amplifier OP1 is grounded. The inverting (-) terminal of the operational amplifier OP1 is used to receive the output of the current-type sensing device and connected to the output terminal of the operational amplifier OP2 via the resistor R.sub.2. The output terminal of the operational amplifier OP1 is connected to the noninverting terminal of the operational amplifier OP2. The output of the operational amplifier OP2 is fed back to the inverting terminal of the operational amplifier OP2 via the capacitor C.sub.1, and the inverting terminal of the operational amplifier OP2 is connected to one terminal of the resistor R.sub.1 of which another terminal is grounded.

    摘要翻译: 根据本发明构造的具有高通滤波器功能的电流 - 电压转换器包含两个运算放大器OP1和OP2,两个电阻器R1和R2以及电容器C1。 运算放大器OP1的同相(+)端子接地。 运算放大器OP1的反相( - )端子用于接收电流型感测装置的输出,并通过电阻R2连接到运算放大器OP2的输出端。 运算放大器OP1的输出端连接到运算放大器OP2的同相端子。 运算放大器OP2的输出经由电容器C1反馈到运算放大器OP2的反相端,运算放大器OP2的反相端连接到另一端子接地的电阻器R1的一端。

    Second order differential highpass filter
    2.
    发明授权
    Second order differential highpass filter 失效
    二阶差分高通滤波器

    公开(公告)号:US5952878A

    公开(公告)日:1999-09-14

    申请号:US9786

    申请日:1998-01-20

    CPC分类号: H03H11/1217

    摘要: A second-order differential highpass filter constructed according to the present invention includes a difference amplifier and a feedback processing circuit. The difference amplifier includes an operational amplifier OP.sub.1, and four resistors R.sub.3, R.sub.4, R.sub.5 and R.sub.6, wherein R.sub.4 /R.sub.3 =R.sub.6 /R.sub.5. An input voltage V.sub.1 is fed to the inverting terminal (-) of the operational amplifier OP.sub.1 via the resistor R.sub.5. Another input voltage V.sub.2 is fed to the noninverting terminal (+) of the operational amplifier OP.sub.1 via the resistor R.sub.3. The output of the operational amplifier OP.sub.1 is fed back to the inverting terminal (-) of the operational amplifier OP.sub.1 via the resistor R.sub.6. The feedback processing circuit includes an operational amplifier OP.sub.2, two resistors R.sub.1 and R.sub.2, and two serial capacitors C.sub.2 and C.sub.1. The output of the operational amplifier OP.sub.2 is fed back to the inverting terminal (-) of the operational amplifier OP.sub.2 via the two serial capacitors C.sub.1 and C.sub.2, and is connected to the noninverting terminal of the operational amplifier OP.sub.1 via the resistor R.sub.4, and the noninverting (+) terminal of the operational amplifier OP.sub.2 is grounded. The inverting terminal of the operational amplifier OP.sub.2 is connected to the output terminal of the operational amplifier OP.sub.1 via the resistor R.sub.1. The two serial capacitors C.sub.1 and C.sub.2 are connected therebetween to one terminal of the resistor R.sub.2 of which another terminal is grounded.

    摘要翻译: 根据本发明构造的二阶差分高通滤波器包括差分放大器和反馈处理电路。 差分放大器包括运算放大器OP1和四个电阻器R3,R4,R5和R6,其中R4 / R3 = R6 / R5。 输入电压V1通过电阻R5馈送到运算放大器OP1的反相端( - )。 另一个输入电压V2通过电阻器R3馈送到运算放大器OP1的同相端(+)。 运算放大器OP1的输出经由电阻R6反馈到运算放大器OP1的反相端( - )。 反馈处理电路包括运算放大器OP2,两个电阻器R1和R2以及两个串联电容器C2和C1。 运算放大器OP2的输出经由两个串联电容器C1和C2反馈到运算放大器OP2的反相端( - ),并且经由电阻器R4连接到运算放大器OP1的同相端子,并且 运算放大器OP2的同相(+)端子接地。 运算放大器OP2的反相端经由电阻R1与运算放大器OP1的输出端相连。 两个串联电容器C1和C2连接在另一个端子接地的电阻器R2的一个端子之间。

    Second-order highpass difference filter
    3.
    发明授权
    Second-order highpass difference filter 失效
    二阶高通差分滤波器

    公开(公告)号:US5701100A

    公开(公告)日:1997-12-23

    申请号:US709867

    申请日:1996-09-10

    IPC分类号: H03H11/12 H03K5/00 H03B1/04

    CPC分类号: H03H11/126

    摘要: A second-order highpass difference filter constructed according to the present invention includes a difference amplifier and a feedback processing circuit. The difference amplifier includes an operational amplifier OP.sub.1, and four resistors R.sub.1, R.sub.2, R.sub.3 and R.sub.4. The feedback processing circuit is composed of two operational amplifiers OP.sub.2 and OP.sub.3, resistors R.sub.5 and R.sub.6, and two serial capacitors C.sub.1 and C.sub.2. The inverting and noninverting terminals of the operational amplifier OP.sub.3 are connected to the output of the difference amplifier and of the operational amplifier OP.sub.2, respectively. The output of the operational amplifier OP.sub.2 is also fed back to the inverting terminal of the operational amplifier OP.sub.2 via the resistor R.sub.5, and the noninverting terminal of the operational amplifier OP.sub.2 is grounded. The output terminal of the operational amplifier OP.sub.3 is connected to the inverting terminal of the operational amplifier OP.sub.2 via the two serial capacitors C.sub.1 and C.sub.2 and to the noninverting terminal of the operational amplifier OP.sub.1 via the resistor R.sub.4. The two serial capacitors C.sub.1 and C.sub.2 are connected therebetween to one terminal of the resistor R.sub.6 of which another terminal is grounded.

    摘要翻译: 根据本发明构造的二阶高通差分滤波器包括差分放大器和反馈处理电路。 差分放大器包括运算放大器OP1和四个电阻器R1,R2,R3和R4。 反馈处理电路由两个运算放大器OP2和OP3,电阻器R5和R6以及两个串联电容器C1和C2组成。 运算放大器OP3的反相和非反相端分别连接到差分放大器和运算放大器OP2的输出端。 运算放大器OP2的输出也通过电阻R5反馈到运算放大器OP2的反相端,运算放大器OP2的同相端接地。 运算放大器OP3的输出端子通过两个串联电容器C1和C2连接到运算放大器OP2的反相端,经由电阻器R4连接到运算放大器OP1的同相端子。 两个串联电容器C1和C2连接在两个串联电容器C1和C2之间的另一个端子接地的电阻器R6的一个端子。

    LIGHT EMITTING DIODE CHIP
    5.
    发明申请
    LIGHT EMITTING DIODE CHIP 有权
    发光二极管芯片

    公开(公告)号:US20100072497A1

    公开(公告)日:2010-03-25

    申请号:US12629030

    申请日:2009-12-01

    IPC分类号: H01L33/00

    摘要: A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.

    摘要翻译: 发光二极管芯片包括永久性基板,其具有形成在永久基板上的保持空间; 绝缘层和顺序地形成在永久性基板和保持间隔物上的金属层; 具有共晶层和发光区域的管芯,并通过耦合到金属层的共晶层与保持空间内的金属层接合; 填充在所述保持空间和所述模具之间的填充结构; 以及形成在管芯上并与发光区域接触的电极。

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME
    6.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    发光二极管及其制造方法

    公开(公告)号:US20080105863A1

    公开(公告)日:2008-05-08

    申请号:US11749139

    申请日:2007-05-15

    IPC分类号: H01L33/00

    摘要: A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer further comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer but not contacted to the second area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.

    摘要翻译: 发光二极管包括永久性基板,其具有形成在永磁基板的第一表面上的芯片保持空间; 绝缘层和金属层,其顺序形成在所述永久基板的第一表面和所述芯片保持空间上,其中所述金属层还包括第一区域和不彼此接触的第二区域; 芯片,其具有附接在所述芯片保持空间的底部上的第一表面,与所述金属层的所述第一区域接触,但不与所述金属层的所述第二区域接触; 填充在芯片保持空间和芯片之间的填充结构; 以及形成在所述芯片的第二表面上的第一电极。 芯片包括发光区域,并且通过使用芯片接合技术来实现金属层的第一区域和发光区域之间的电连接。

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME
    7.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    发光二极管及其制造方法

    公开(公告)号:US20070290221A1

    公开(公告)日:2007-12-20

    申请号:US11748802

    申请日:2007-05-15

    IPC分类号: H01L33/00

    摘要: A light emitting diode includes a permanent substrate having a first portion and a second portion, and a chip attached on the first portion of the permanent substrate by a chip bonding technology. The chip includes at least one first electrode and a light emitting region. The manufacturing method comprises a step of mounting a single chip on the first portion of the permanent substrate by a chip bonding technology to overcome the fragility problem of an EPI-wafer.

    摘要翻译: 发光二极管包括具有第一部分和第二部分的永久性基板,以及通过芯片接合技术附接在永久基板的第一部分上的芯片。 芯片包括至少一个第一电极和发光区域。 制造方法包括通过芯片接合技术将单个芯片安装在永久基板的第一部分上以克服EPI晶片的脆性问题的步骤。

    Light-emitting diode with cavity containing a filler
    8.
    发明授权
    Light-emitting diode with cavity containing a filler 有权
    发光二极管,带有填充物的空腔

    公开(公告)号:US06903381B2

    公开(公告)日:2005-06-07

    申请号:US10421742

    申请日:2003-04-24

    IPC分类号: H01L33/00 H01L33/38

    摘要: The present invention discloses a light-emitting diode and a method for manufacturing such a light-emitting diode with a direct band-gap III-V compound semiconductor material on a GaAs substrate. It is implemented by forming a first conductive electrode on the top edge of the epitaxial LED layer and a second conductive electrode opposite the first conductive electrode on the edge of a transparent substrate. Further, after the first conductive electrode and second conductive electrode are connected by chip bonding skill, it is selectively to remove the GaAs substrate and plate a transparent electrode on the top portion of the epitaxial LED layer. Therefore, when casting from P-N junction of the light-emitting diode, the light will go through with directions of the top portion of epitaxial layer and transparent substrate.

    摘要翻译: 本发明公开了一种在GaAs衬底上制造具有直接带隙III-V化合物半导体材料的发光二极管的发光二极管和方法。 其通过在外延LED层的顶边缘上形成第一导电电极和在透明基板的边缘上与第一导电电极相对的第二导电电极来实现。 此外,在通过芯片接合技术连接第一导电电极和第二导电电极之后,有选择地去除GaAs衬底并在外延LED层的顶部上设置透明电极。 因此,当从发光二极管的P-N结铸造时,光将穿过外延层的顶部和透明基板的方向。

    Chip-bonding light emitting diode chip
    9.
    发明授权
    Chip-bonding light emitting diode chip 有权
    芯片贴片发光二极管芯片

    公开(公告)号:US08283683B2

    公开(公告)日:2012-10-09

    申请号:US12629030

    申请日:2009-12-01

    IPC分类号: H01L33/00

    摘要: A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.

    摘要翻译: 发光二极管芯片包括永久性基板,其具有形成在永久基板上的保持空间; 绝缘层和顺序地形成在永久性基板和保持间隔物上的金属层; 具有共晶层和发光区域的管芯,并通过耦合到金属层的共晶层与保持空间内的金属层接合; 填充在所述保持空间和所述模具之间的填充结构; 以及形成在管芯上并与发光区域接触的电极。