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    Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing
    5.
    发明授权
    Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing 有权
    磁性随机存取存储器具有具有相反方向易于偏置的堆叠式触发存储单元

    公开(公告)号：US07453720B2

    公开(公告)日：2008-11-18

    申请号：US11138609

    申请日：2005-05-26

    申请人： Kochan Ju ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Jei-Wei Chang

    IPC分类号： G11C11/02

    CPC分类号： H01L27/222 ,  G11C11/15 ,  G11C11/5607 ,  H01L27/228

    摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each stack is located at an intersection region between the two orthogonal write lines. The cells are stacked in pairs, with the cells in each pair having their easy axes of magnetization aligned substantially parallel to one another and nonparallel with the X and Y axes. The cells in each pair have their free layers magnetically biased in opposite directions. Because the free layer of each cell in a pair is biased in a direction opposite to the bias direction of the free layer of the other cell, one cell in a pair can be toggle written without toggle writing the other cell in the pair. The bias fields on the free layers reduces the required switching field for each cell, which results in less write current and a lower-power toggling MRAM.

    摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。 每个堆栈位于两个正交写入线之间的交叉区域。 电池成对堆叠，每对中的电池具有易于相互平行的磁化轴，并且与X轴和Y轴不平行。 每对中的电池具有以相反方向磁偏置的自由层。 因为一对中的每个单元的自由层在与另一个单元的自由层的偏置方向相反的方向上被偏置，所以一对单元可以被切换而不用切换写入该对中的另一个单元。 自由层上的偏置场减少了每个单元所需的切换场，这导致较少的写入电流和较低功率的切换MRAM。

    Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing
    6.
    发明授权
    Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing 有权
    具有堆叠存储单元的磁性随机存取存储器具有相反方向的硬轴偏置

    公开(公告)号：US07285836B2

    公开(公告)日：2007-10-23

    申请号：US11075900

    申请日：2005-03-09

    申请人： Kochan Ju ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Jei-Wei Chang

    IPC分类号： H01L29/82 ,  H01L29/94 ,  G11C11/50

    CPC分类号： H01L27/226 ,  G11C11/16

    摘要： A magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate, with each memory stack having two memory cells stacked along the Z axis and each memory cell having an associated biasing layer. Each biasing layer reduces the switching field of its associated cell by applying a biasing field along the hard-axis of magnetization of the free layer of its associated cell. The free layers in the two cells in each stack have their in-plane easy axes of magnetization aligned parallel to one another. Each biasing layer has its in-plane magnetization direction oriented perpendicular to the easy axis of magnetization (and thus parallel to the hard axis) of the free layer in its associated cell. The hard-axis biasing fields generated by the two biasing layers are in opposite directions.

    摘要翻译： 磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储器堆栈具有沿Z轴堆叠的两个存储器单元，并且每个存储器单元具有相关联的偏置层。 每个偏置层通过沿其相关联的单元的自由层的硬磁化轴施加偏置场来减小其相关单元的切换场。 每个堆叠中的两个电池中的自由层具有平行彼此平行的平面内容易的磁化轴。 每个偏置层的面内磁化方向垂直于其相关电池中的自由层的易磁化轴（并且因此平行于硬轴）定向。 由两个偏压层产生的硬轴偏置磁场处于相反的方向。

    Method of manufacturing integrated spin valve head
    7.
    发明授权
    Method of manufacturing integrated spin valve head 失效
    集成自旋阀头的制造方法

    公开(公告)号：US07162791B2

    公开(公告)日：2007-01-16

    申请号：US11011995

    申请日：2004-12-14

    申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    IPC分类号： G11B5/127 ,  G11B5/83 ,  H04R31/00

    CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： Currently, in a process of manufacturing a top spin valve structure, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer.

    摘要翻译： 目前，在制造顶部自旋阀结构的过程中，自旋阀头的屏蔽与屏蔽间隔不能低于约800，这主要是由于传感器与铅的短路问题。 现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。

    Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing
    8.
    发明申请
    Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing 有权
    磁性随机存取存储器具有具有相反方向易于偏置的堆叠式触发存储单元

    公开(公告)号：US20060267056A1

    公开(公告)日：2006-11-30

    申请号：US11138609

    申请日：2005-05-26

    申请人： Kochan Ju ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Jei-Wei Chang

    IPC分类号： H01L29/94

    CPC分类号： H01L27/222 ,  G11C11/15 ,  G11C11/5607 ,  H01L27/228

    摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each stack is located at an intersection region between the two orthogonal write lines. The cells are stacked in pairs, with the cells in each pair having their easy axes of magnetization aligned substantially parallel to one another and nonparallel with the X and Y axes. The cells in each pair have their free layers magnetically biased in opposite directions. Because the free layer of each cell in a pair is biased in a direction opposite to the bias direction of the free layer of the other cell, one cell in a pair can be toggle written without toggle writing the other cell in the pair. The bias fields on the free layers reduces the required switching field for each cell, which results in less write current and a lower-power toggling MRAM.

    摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。 每个堆栈位于两个正交写入线之间的交叉区域。 电池成对堆叠，每对中的电池具有易于相互平行的磁化轴，并且与X轴和Y轴不平行。 每对中的电池具有以相反方向磁偏置的自由层。 因为一对中的每个单元的自由层在与另一个单元的自由层的偏置方向相反的方向上被偏置，所以一对单元可以被切换而不用切换写入该对中的另一个单元。 自由层上的偏置场减少了每个单元所需的切换场，这导致较少的写入电流和较低功率的切换MRAM。

    Process for manufacturing a top spin valve
    9.
    发明授权
    Process for manufacturing a top spin valve 失效
    制造顶部自旋阀的方法

    公开(公告)号：US07060321B2

    公开(公告)日：2006-06-13

    申请号：US11011994

    申请日：2004-12-14

    申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    IPC分类号： B05D5/12 ,  G11B5/84

    CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

    摘要翻译： 目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。 现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。 描述本发明的五个实施例。