Quantum well semiconductor laser
    1.
    发明授权
    Quantum well semiconductor laser 失效
    量子半导体激光器

    公开(公告)号:US5081634A

    公开(公告)日:1992-01-14

    申请号:US547040

    申请日:1990-07-02

    IPC分类号: H01S5/00 H01S5/34

    CPC分类号: B82Y20/00 H01S5/34

    摘要: The quantum well semiconductor laser has at least one ultrafine layer with a thickness smaller than the critical thickness, the material of which is isoelectronic with that of the well.

    摘要翻译: 量子阱半导体激光器具有至少一个厚度小于临界厚度的超微细层,其临界厚度与阱的等电子质量相同。

    Supporting device for chromophore elements
    3.
    发明申请
    Supporting device for chromophore elements 审中-公开
    发色团元素支持装置

    公开(公告)号:US20050214160A1

    公开(公告)日:2005-09-29

    申请号:US11052708

    申请日:2005-02-01

    IPC分类号: G01N21/64

    摘要: A device for supporting chromophore elements comprises a plane mirror covered in a layer of material that is transparent at the wavelengths to be detected, said layer having a set of spots on which the chromophore elements are fixed, the spots being subdivided into a plurality of zones of different thicknesses so as to cause the intensity of the fluorescence emitted by the chromophore elements to vary by destructive interference or by constructive interference, respectively.

    摘要翻译: 用于支撑生色团元件的装置包括覆盖在待检测波长处是透明的材料层中的平面镜,所述层具有固定发色团元件的一组斑点,斑点被细分成多个区域 以使发色团发出的荧光的强度分别由于破坏性干扰或建设性干扰而变化。

    Biochip type device
    8.
    发明授权
    Biochip type device 失效
    生物芯片型设备

    公开(公告)号:US07306766B2

    公开(公告)日:2007-12-11

    申请号:US10849141

    申请日:2004-05-20

    IPC分类号: G01N21/01 G01N21/64

    CPC分类号: G01N21/7703 G01N21/648

    摘要: An improved biochip type device comprising a substrate (10) including an intermediate non-absorbent multilayer mirror (12) covered by a layer (14) of high refractive index material having chromophore elements (16) fixed thereon, the layer (14) further including feature (24) for extracting guided-mode light in order to recover the light emitted by the chromophore elements (16) into the layer (14) in response to light excitation, and direct the light to detection and measurement means.

    摘要翻译: 一种改进的生物芯片型装置,包括:衬底(10),包括由固定有发色团元件(16)的高折射率材料层(14)覆盖的中间非吸收性多层反射镜(12),所述层(14)还包括 特征(24),用于提取导向光,以便响应于光激发将发色团元件(16)发射的光恢复到层(14)中,并将光引导到检测和测量装置。

    Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
    9.
    发明申请
    Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate 有权
    单一或多色高效率发光二极管(LED)通过在图案化衬底上生长

    公开(公告)号:US20060202226A1

    公开(公告)日:2006-09-14

    申请号:US11067910

    申请日:2005-02-28

    IPC分类号: H01L33/00

    摘要: A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.

    摘要翻译: 具有高提取效率的单色或多色发光二极管(LED)由衬底,形成在衬底上的缓冲层,沉积在缓冲层顶部上的一个或多个图案化层和形成的一个或多个有源层组成 在图案化层之间或之间,例如通过横向外延生长(LEO),并且包括一个或多个发光物质,例如量子阱。 图案化层包括由绝缘,半导体或金属材料制成的图案化,穿孔或穿孔掩模,以及填充掩模中的孔的材料。 由于掩模和填充掩模中的孔的材料之间的折射率的变化,由于折射率与有源层和/或作为掩埋衍射光栅的对比,图案化层用作光学限制层。