摘要:
The quantum well semiconductor laser has at least one ultrafine layer with a thickness smaller than the critical thickness, the material of which is isoelectronic with that of the well.
摘要:
A semi-conducting structure delimits two quantal wells (CP1, CP2) connected across a barrier layer (CB). The application of an electric field to the structure makes possible the transfer of electrons from one of the wells to the other. The electron-hole pairs are created by a wave-pump, or by the doping of one of the wells. This makes possible, in particular, a dual control by means of the wave-pump and the electric field, thus creating an "AND"-function modulator.
摘要:
A device for supporting chromophore elements comprises a plane mirror covered in a layer of material that is transparent at the wavelengths to be detected, said layer having a set of spots on which the chromophore elements are fixed, the spots being subdivided into a plurality of zones of different thicknesses so as to cause the intensity of the fluorescence emitted by the chromophore elements to vary by destructive interference or by constructive interference, respectively.
摘要:
Disclosed is a semiconductor laser that is constituted by at least one active layer sandwiched between two confinement layers with P and N type doping to constitute a PN junction. In at least one of the confinement layers and/or the active layer, holes are designed on each side of the cavity so as to form structures of photonic bandgap material along the lateral walls of the cavity and the ends of the cavity.
摘要:
The object of the invention is to reduce the influence of dislocations on the functioning of structures for optoelectronic component, such as laser, made from semiconductor materials. Accordingly, one of the lasers of such a structure comprises three-dimensional inclusions in a semiconductor material with a thinner forbidden band than the forbidden band of the layer material. The inclusions are e.g. distributed over several planes of the active layer of a laser, and may be in InAs introduced into a layer in GaAs.
摘要:
A biochip device comprising a substrate constituted by at least one plate of material forming a multimode planar waveguide and carrying chromophore elements suitable for emitting fluorescence in response to excitation by guided waves having an evanescent portion, the device being characterized in that it includes coupling means for coupling excitation light with the waveguide in the form of guided waves, the coupling means being substantially non-directional.
摘要:
A device for detecting the fluorescence emitted by chromophore elements contained in the wells of a multiwell plate, the device comprising means integrated in the transparent bottoms of the wells of the plate to limit the penetration length in the wells of a light beam for exciting chromophore elements fixed on the bottoms of the wells.
摘要:
An improved biochip type device comprising a substrate (10) including an intermediate non-absorbent multilayer mirror (12) covered by a layer (14) of high refractive index material having chromophore elements (16) fixed thereon, the layer (14) further including feature (24) for extracting guided-mode light in order to recover the light emitted by the chromophore elements (16) into the layer (14) in response to light excitation, and direct the light to detection and measurement means.
摘要:
A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.
摘要:
A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or more optical confinement layers that tailor the structure of the guided modes in the LED, and one or more diffraction gratings, wherein the diffraction gratings are two-dimensional photonic crystal extractors. The substrate may be removed and metal layers may be deposited on the buffer layer, photonic crystal and active layer, wherein the metal layers may function as a mirror, an electrical contact, and/or an efficient diffraction grating.