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    HEAT DISSIPATION COMPONENT FOR SEMICONDUCTOR ELEMENT
    1.
    发明申请
    HEAT DISSIPATION COMPONENT FOR SEMICONDUCTOR ELEMENT 审中-公开

    公开(公告)号：US20170268834A1

    公开(公告)日：2017-09-21

    申请号：US15508187

    申请日：2015-09-01

    申请人： DENKA COMPANY LIMITED

    发明人： Yosuke ISHIHARA ,  Takeshi MIYAKAWA ,  Kazunori KOYANAGI

    IPC分类号： F28F21/02 ,  C22C49/06 ,  H01L23/373 ,  C22C21/02 ,  F28F21/08 ,  C22C26/00 ,  C22C47/12

    摘要： A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 μm and a second peak at 55-195 μm. A ratio between a volume distribution area at particle diameters of 1-35 μm and a volume distribution area at particle diameters of 45-205 μm is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 μm, and the Au layer having a film thickness of 0.05 μm or larger.

    HEAT DISSIPATION COMPONENT FOR SEMICONDUCTOR ELEMENT
    6.
    发明申请
    HEAT DISSIPATION COMPONENT FOR SEMICONDUCTOR ELEMENT 审中-公开

    公开(公告)号：US20190341330A1

    公开(公告)日：2019-11-07

    申请号：US16474690

    申请日：2017-11-24

    申请人： DENKA COMPANY LIMITED

    发明人： Yosuke ISHIHARA ,  Takeshi MIYAKAWA ,  Hiroaki OTA ,  Hideo TSUKAMOTO

    IPC分类号： H01L23/373 ,  C22C26/00 ,  C25D7/12 ,  C23C18/32

    摘要： A sheet-shaped aluminum-diamond composite containing a prescribed amount of a diamond powder wherein a first and second peak in a volumetric distribution of particle sizes occurs at 5-25 μm and 55-195 μm, and a ratio between an area of a volumetric distribution of particle sizes of 1-35 μm and 45-205 μm is from 1:9 to 4:6, the composite including an aluminum-containing metal as the balance, wherein the composite is covered, on both main surfaces, with a surface layer having prescribed film thicknesses and containing 80 vol % or more of an aluminum-containing metal, two or more Ni-containing layers are formed on at least the surface layer, the Ni-containing layers being such that a first and second layer from the surface layer side are amorphous Ni alloy layers having prescribed thicknesses, and an Au layer having a prescribed thickness is formed as an outermost layer.

    ALUMINUM-DIAMOND-BASED COMPOSITE AND METHOD FOR PRODUCING SAME
    7.
    发明申请
    ALUMINUM-DIAMOND-BASED COMPOSITE AND METHOD FOR PRODUCING SAME 审中-公开

    公开(公告)号：US20180281230A1

    公开(公告)日：2018-10-04

    申请号：US15765931

    申请日：2016-10-11

    申请人： DENKA COMPANY LIMITED

    发明人： Hiroaki OTA ,  Takeshi MIYAKAWA ,  Yosuke ISHIHARA

    IPC分类号： B28B19/00 ,  C09K5/14 ,  H01L23/373 ,  F28F21/08 ,  B28B11/24

    摘要： The present invention provides an aluminum-diamond composite which combines high thermal conductivity and a coefficient of thermal expansion close to a semiconductor clement, and in which the difference between the thicknesses of both surfaces is reduced so as to be suitable for use as a heat sink etc. for a semiconductor element. Provided is a flat plate-shaped aluminum-diamond composite that has an aluminum-diamond composite part and a surface layer that coats both surfaces of the composite part and includes a metal that has aluminum as a principal component, Wherein: the composite part is composed of a composite material that is composed of an aluminum or aluminum alloy matrix and diamond particles dispersed in said matrix; the composite material is composed of a diamond powder in which diamond particles having a particle size of 1-20 μm, inclusive, make up 10-40 vol of the diamond particles and diamond particles having a particle size of 100-250 μm, inclusive, make up 50-80 vol %, said powder not containing diamond particles having a particle size of less than 1 μm or diamond particles having a particle size of more than 250 μm; and the average value for the differences in in-plane thickness per 50 mm×50 mm is 100 μm or less.

    CERAMIC CIRCUIT BOARD
    9.
    发明申请
    CERAMIC CIRCUIT BOARD 有权
    陶瓷电路板

    公开(公告)号：US20160358840A1

    公开(公告)日：2016-12-08

    申请号：US15119052

    申请日：2015-02-20

    申请人： Denka Company Limited

    发明人： Ryota AONO ,  Kosuke WADA ,  Masao TSUICHIHARA ,  Takeshi MIYAKAWA

    IPC分类号： H01L23/373 ,  H01L23/498 ,  C04B37/02

    摘要： [Problem] To obtain a ceramic circuit substrate having high bonding strength, excellent heat cycle resistance, enhanced reliability of operation as an electronic device, and excellent heat dissipation properties.[Solution] A ceramic circuit substrate in which metal plates and both main surfaces of a ceramic substrate are bonded via silver-copper brazing material layers, the ceramic Cit quit substrate characterized in that the silver-copper brazing material layers are formed from a silver-copper brazing material including 0.3-7.5 parts by mass of carbon fibers and 1.0-9.0 parts by mass of at least one active metal selected from titanium, zirconium, hafnium, niobium, tantalum, vanadium, and tin with respect to 75-98 parts by mass of silver powder and 2-25 parts by mass of copper powder totaling 100 part by mass, with the carbon fibers having an average length of 15-400 μm, an average diameter of 5-25 μm and an average aspect ratio of 3-28.

    摘要翻译： [解决方案]陶瓷电镀基板，其中金属板和陶瓷基板的两个主表面通过银 - 铜钎料层接合，陶瓷Cit离子基板的特征在于，银 - 铜钎焊材料层由银 - 含有0.3〜7.5质量份的碳纤维的铜钎焊材料和选自钛，锆，铪，铌，钽，钒和锡中的至少一种活性金属相对于75-98份的1.0-9.0质量份 银粉的质量和总计100质量份的2〜25质量份的铜粉，碳纤维的平均长度为15〜400μm，平均直径为5〜25μm，平均长径比为3〜 28。