Semiconductor die with integral decoupling capacitor
    9.
    发明授权
    Semiconductor die with integral decoupling capacitor 有权
    具有整体去耦电容器的半导体芯片

    公开(公告)号:US06563192B1

    公开(公告)日:2003-05-13

    申请号:US09882469

    申请日:2001-06-14

    IPC分类号: H01L2900

    摘要: A gateway or circuit barrier capacitor incorporated in a semiconductor die structure in lieu of a discrete capacitor employed with such a die in a Chip on Board assembly such as a single in-line memory module (SIMM). The capacitor may comprise a single layer with laterally adjacent, dielectrically separated electrode traces, or a more traditional vertically superimposed electrode design with an intervening dielectric layer. The capacitor is preferably formed using the existing fabrication process for the die by altering a photoresist mask to define the electrode traces in the same step as other conductors, such as bond pads, are formed.

    摘要翻译: 一种集成在半导体管芯结构中的网关或电路阻挡电容器,代替了诸如单列直插式存储器模块(SIMM)的片上组件的这种模具所采用的分立电容器。 电容器可以包括具有横向相邻的介电离开的电极迹线的单层或者具有中间介电层的更传统的垂直叠加的电极设计。 优选地,通过改变光致抗蚀剂掩模来使用现有的裸片的制造工艺来形成电容器,以与其它导体(例如接合焊盘)形成相同的步骤来限定电极迹线。