Transistor-based molecular detection apparatus and method
    1.
    发明授权
    Transistor-based molecular detection apparatus and method 失效
    基于晶体管的分子检测装置及方法

    公开(公告)号:US06203981B1

    公开(公告)日:2001-03-20

    申请号:US09068172

    申请日:1999-02-08

    IPC分类号: C12Q168

    摘要: Adjacent first and second transistors are integrated with a substrate. Each of the first and second transistors has a gate electrode, a source electrode, a drain electrode and a semiconductive channel formed of an organic material, the semiconductive channel electrically coupling the source electrode with the drain electrode. The source electrode of the first transistor is electrically coupled to the source electrode of the second transistor. A molecular receptor is bound directly to a surface of the semiconductive channel of the first transistor. A non-zero offset voltage, which produces equal channel currents in the semiconductive channels of the first and second transistors after a molecule has bound with the molecular receptor without a like binding event proximate to the second transistor, is sensed between the gate electrodes of the first and second transistors.

    摘要翻译: 相邻的第一和第二晶体管与衬底集成。 第一和第二晶体管中的每一个具有栅电极,源电极,漏电极和由有机材料形成的半导体沟道,半导体沟道将源电极与漏电极电耦合。 第一晶体管的源电极电耦合到第二晶体管的源电极。 分子受体直接结合到第一晶体管的半导体通道的表面。 在零分子与分子受体结合而没有靠近第二晶体管的相似结合事件之后,在第一和第二晶体管的半导体通道中产生相等的沟道电流的非零偏移电压被感测在 第一和第二晶体管。

    Structure and method of measuring electrical characteristics of a
molecule
    5.
    发明授权
    Structure and method of measuring electrical characteristics of a molecule 失效
    测量分子电特性的结构和方法

    公开(公告)号:US5945832A

    公开(公告)日:1999-08-31

    申请号:US24147

    申请日:1998-02-17

    IPC分类号: G01N27/07 G01R27/08

    CPC分类号: G01N27/07

    摘要: A method of measuring electrical characteristics of a molecule including providing a first metal contact having a major surface, an insulating layer overlying the major surface of the first metal contact and a second metal contact overlying the insulating layer so as to have an edge spaced a molecular distance from the major surface of the first metal contact. A conductive organic molecule including a metal binding group is coupled between the metal contacts.

    摘要翻译: 一种测量分子的电特性的方法,包括提供具有主表面的第一金属触点,覆盖在第一金属触点的主表面上的绝缘层和覆盖绝缘层的第二金属触点,以便具有间隔开分子的边缘 距离第一金属触点的主表面。 包含金属结合基团的导电有机分子被连接在金属触点之间。

    DUAL DETECTION SCHEME FOR DNA SEQUENCING
    7.
    发明申请

    公开(公告)号:US20180052106A1

    公开(公告)日:2018-02-22

    申请号:US15239032

    申请日:2016-08-17

    IPC分类号: G01N21/64 C12Q1/68 G01N27/414

    摘要: Apparatus for fluorescent and ion sensing of DNA nucleotide incorporation events including DNA nucleotide incorporation structure designed to have sequencing primers bonded to a surface for the incorporation of DNA nucleotides thereon. At least some of the DNA nucleotides having a fluorescent label. A photodiode positioned adjacent the incorporation structure and an illumination device positioned adjacent the DNA nucleotide incorporation structure to illuminate DNA nucleotides incorporated onto the sequencing primers. The illumination device exciting the fluorescent labels when incorporation occurs and the photodiode positioned to sense the excited fluorescent labels. Ion sensing apparatus positioned adjacent the DNA nucleotide incorporation structure including a metal oxide thin film transistor with a gate electrically coupled to receive an electrical signal indicative of ion emissions produced by the DNA nucleotide incorporated onto DNA target fragments or sequencing primers.

    Thin film transistor with low trap-density material abutting a metal oxide active layer and the gate dielectric

    公开(公告)号:US09911857B2

    公开(公告)日:2018-03-06

    申请号:US12915712

    申请日:2010-10-29

    IPC分类号: H01L29/786

    CPC分类号: H01L29/7869 H01L29/78696

    摘要: A metal oxide semiconductor device including an active layer of metal oxide, a layer of gate dielectric, and a layer of low trap density material. The layer of low trap density material is sandwiched between the active layer of metal oxide and the layer of gate dielectric. The layer of low trap density material has a major surface parallel and in contact with a major surface of the active layer of metal oxide to form a low trap density interface with the active layer of metal oxide. A second layer of low trap density material can optionally be placed in contact with the opposed major surface of the active layer of metal oxide so that a low trap density interface is formed with both surfaces of the active layer of metal oxide.