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    Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme
    1.
    发明授权
    Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme 失效
    制造更高性能的电容密度MIMcap的廉价方法可以集成到铜互连方案中

    公开(公告)号：US07687867B2

    公开(公告)日：2010-03-30

    申请号：US11846248

    申请日：2007-08-28

    申请人： Douglas D. Coolbaugh ,  Ebenezer E. Eshun ,  Zhong-Xiang He ,  William J. Murphy ,  Vidhya Ramachandran

    发明人： Douglas D. Coolbaugh ,  Ebenezer E. Eshun ,  Zhong-Xiang He ,  William J. Murphy ,  Vidhya Ramachandran

    IPC分类号： H01L29/72

    CPC分类号： H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by deposition and patterning of the MIM capacitor films. Specifically, the method includes providing a substrate including a wiring level, the wiring level comprising at least one conductive interconnect formed in a dielectric layer; selectively removing a portion of the dielectric layer to recess the dielectric layer below an upper surface of the at least one conductive interconnect; forming a dielectric stack upon the at least one conductive interconnect and the recessed dielectric layer; and forming a metal-insulator-metal (MIM) capacitor on the dielectric stack. The MIM capacitor includes a bottom plate electrode, a dielectric and a top plate electrode. The bottom and top plate electrodes can comprise the same or different conductive metal.

    摘要翻译： 提供了一种将MIM电容器集成到导电互连级别中的方法，具有低成本影响，并且提供了比现有集成方法高的产量，可靠性和性能。 这通过将用于MIM电容器电平对准的先前级别的电介质凹入，然后MIM电容器膜的沉积和图案化来实现。 具体地，该方法包括提供包括布线层的衬底，所述布线层包括形成在电介质层中的至少一个导电布线; 选择性地去除所述电介质层的一部分以使所述电介质层在所述至少一个导电互连的上表面下方凹陷; 在所述至少一个导电互连和所述凹入的介电层上形成电介质叠层; 以及在介电叠层上形成金属绝缘体金属（MIM）电容器。 MIM电容器包括底板电极，电介质和顶板电极。 底板和顶板电极可以包括相同或不同的导电金属。

    Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme
    2.
    发明授权
    Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme 有权
    制造更高性能的电容密度MIMcap的廉价方法可以集成到铜互连方案中

    公开(公告)号：US07282404B2

    公开(公告)日：2007-10-16

    申请号：US10709829

    申请日：2004-06-01

    申请人： Douglas D. Coolbaugh ,  Ebenezer E. Eshun ,  Zhong-Xiang He ,  William J. Murphy ,  Vidhya Ramachandran

    发明人： Douglas D. Coolbaugh ,  Ebenezer E. Eshun ,  Zhong-Xiang He ,  William J. Murphy ,  Vidhya Ramachandran

    IPC分类号： H01L21/8242

    CPC分类号： H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by deposition and patterning of the MIM capacitor films. Specifically, the method includes providing a substrate including a wiring level, the wiring level comprising at least one conductive interconnect formed in a dielectric layer; selectively removing a portion of the dielectric layer to recess the dielectric layer below an upper surface of the at least one conductive interconnect; forming a dielectric stack upon the at least one conductive interconnect and the recessed dielectric layer; and forming a metal-insulator-metal (MIM) capacitor on the dielectric stack. The MIM capacitor includes a bottom plate electrode, a dielectric and a top plate electrode. The bottom and top plate electrodes can comprise the same or different conductive metal.

    摘要翻译： 提供了一种将MIM电容器集成到导电互连级别中的方法，具有低成本影响，并且提供了比现有集成方法高的产量，可靠性和性能。 这通过将用于MIM电容器电平对准的先前级别的电介质凹入，然后MIM电容器膜的沉积和图案化来实现。 具体地，该方法包括提供包括布线层的衬底，所述布线层包括形成在电介质层中的至少一个导电布线; 选择性地去除所述电介质层的一部分以使所述电介质层在所述至少一个导电互连的上表面下方凹陷; 在所述至少一个导电互连和所述凹入的介电层上形成电介质叠层; 以及在介电叠层上形成金属绝缘体金属（MIM）电容器。 MIM电容器包括底板电极，电介质和顶板电极。 底板和顶板电极可以包括相同或不同的导电金属。