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    Manufacturing method
    1.
    发明授权
    Manufacturing method 有权

    公开(公告)号：US10957674B2

    公开(公告)日：2021-03-23

    申请号：US16699805

    申请日：2019-12-02

    申请人： Genesis Photonics Inc.

    发明人： Cheng-Wei Hung ,  Jui-Fu Chang ,  Chin-Hua Hung ,  Yu-Feng Lin

    IPC分类号： H01L25/075 ,  H01L33/60 ,  H01L33/50 ,  H01L33/56 ,  H01L33/54 ,  H01L33/62 ,  H01L33/48

    摘要： A manufacturing method is provided. The manufacturing method includes the following steps. Firstly, a substrate and a light-emitting component are provided, wherein the light-emitting component is disposed on the substrate. Then, a wavelength conversion layer is provided, wherein the wavelength conversion layer includes a high-density phosphor layer and a low-density phosphor layer. Then, the high-density phosphor layer is adhered to the light-emitting component by an adhesive. Then, a reflective layer is formed above the substrate, wherein the reflective layer covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion layer.

    LIGHT EMITTING DEVICE
    3.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20190165232A1

    公开(公告)日：2019-05-30

    申请号：US16180071

    申请日：2018-11-05

    申请人： Genesis Photonics Inc.

    发明人： Cheng-Wei Hung ,  Chin-Hua Hung ,  Xun-Xain Zhan ,  Chuan-Yu Liu ,  Yu-Feng Lin

    IPC分类号： H01L33/62 ,  H01L33/50 ,  H01L33/64

    摘要： A light emitting device including a first light emitting unit, a second light emitting unit, a heat dissipation substrate, a plurality of first bumps and a plurality of second bumps is provided. The heat dissipation substrate is disposed between the first light emitting unit and the second light emitting unit. The first bumps are connected between the first light emitting unit and the heat dissipation substrate. The second bumps are connected between the second light emitting unit and the heat dissipation substrate.

    CIRCUIT STRUCTURE OF A FLIP-CHIP LIGHT EMITTING DIODE
    4.
    发明申请
    CIRCUIT STRUCTURE OF A FLIP-CHIP LIGHT EMITTING DIODE 审中-公开
    片状发光二极管的电路结构

    公开(公告)号：US20160118561A1

    公开(公告)日：2016-04-28

    申请号：US14733957

    申请日：2015-06-08

    申请人： Genesis Photonics Inc.

    发明人： Cheng-Wei Hung ,  Meng-Ting Tsai ,  Yu-Feng Lin

    IPC分类号： H01L33/62 ,  H01L25/075 ,  H01L33/60

    CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention relates to a circuit structure of a flip-chip light emitting diode. It is provided for assembling of the flip-chip light emitting diode. Each flip-chip light emitting diode has at least two electrodes. The circuit structure defines a light emitting surface on a surface of a substrate, and the light emitting surface is provided with a plurality of reflective and conductive surfaces. The reflective and conductive surface is used for assembling of the electrodes of the flip-chip light emitting diode. At least one flip-chip light emitting diode is connected in series, parallel or series-parallel on the light emitting surface, wherein the total area of the reflective and conductive surface accounts for 80% to 99% of the area of the light emitting surface. Accordingly, the circuit structure of the flip-chip light emitting diode can efficiently improve the luminous efficiency of flip-chip light emitting diode device by adding a proportion of the area of the reflective conduction surfaces on the substrate of the flip-chip light emitting diode.

    摘要翻译： 本发明涉及倒装芯片发光二极管的电路结构。 提供用于组装倒装芯片发光二极管。 每个倒装芯片发光二极管具有至少两个电极。 电路结构限定了衬底表面上的发光表面，并且发光表面设置有多个反射和导电表面。 反射和导电表面用于组装倒装芯片发光二极管的电极。 至少一个倒装芯片发光二极管在发光表面上串联，并联或串联平行连接，其中反射和导电表面的总面积占发光表面面积的80％至99％ 。 因此，倒装芯片发光二极管的电路结构可以通过在倒装芯片发光二极管的基板上添加反射导电表面积的一部分来有效地提高倒装芯片发光二极管器件的发光效率 。

    LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 有权
    发光二极管结构及其制造方法

    公开(公告)号：US20160276547A1

    公开(公告)日：2016-09-22

    申请号：US15073715

    申请日：2016-03-18

    申请人： Genesis Photonics Inc.

    发明人： Cheng-Wei Hung ,  Yu-Feng Lin

    IPC分类号： H01L33/50 ,  H01L27/15 ,  H01L33/38 ,  H01L33/00 ,  H01L33/56 ,  H01L33/40

    CPC分类号： H01L33/502 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/50 ,  H01L33/505 ,  H01L33/52 ,  H01L33/56 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066

    摘要： An edge lighting light emitting diode (LED) structure and a method of manufacturing the same are provided. The edge lighting LED structure includes a substrate, an electrode pattern, a chip, an encapsulation layer and a fluorescent layer. The electrode pattern at least includes two first conducting portions separately disposed on an upper surface of the substrate, two second conducting portions separately disposed on a lower surface of the substrate, and two conducting holes separately vertically penetrating through the substrate, each conducting hole connects a first conducting portion and a second conducting portion, and the conducting holes are exposed on a lateral surface of the substrate. A second surface of the chip is disposed on the first conducting portions. A top surface of the encapsulation layer exposes and is aligned with the first surface of the chip. The fluorescent layer covers a first surface of the chip.

    摘要翻译： 提供一种边缘照明发光二极管（LED）结构及其制造方法。 边缘照明LED结构包括基板，电极图案，芯片，封装层和荧光层。 电极图案至少包括分别设置在基板的上表面上的两个第一导电部分，分别设置在基板的下表面上的两个第二导电部分和分别垂直穿过基板的两个导电孔，每个导通孔连接 第一导电部分和第二导电部分，并且导电孔暴露在基板的侧表面上。 芯片的第二表面设置在第一导电部分上。 封装层的顶表面暴露并与芯片的第一表面对准。 荧光层覆盖芯片的第一表面。