Removable inorganic anti-reflection coating process
    1.
    发明授权
    Removable inorganic anti-reflection coating process 有权
    可拆卸的无机防反射涂层工艺

    公开(公告)号:US06607984B1

    公开(公告)日:2003-08-19

    申请号:US09597122

    申请日:2000-06-20

    IPC分类号: H01L21302

    摘要: In accordance with the present invention, a method for employing and removing inorganic anti-reflection coatings, includes the steps of providing a first dielectric layer on a semiconductor device structure to be processed, the first dielectric layer being selectively removable relative to the semiconductor device structure, and forming an inorganic dielectric anti-reflection coating (DARC) on the first dielectric layer, the DARC being selectively removable relative to the first dielectric layer. A resist layer is patterned on the DARC. The resist is selectively removable relative to the DARC. The semiconductor device structure is etched, and the resist layer, the DARC and the first dielectric layer are selectively removed.

    摘要翻译: 根据本发明,一种采用和去除无机抗反射涂层的方法包括以下步骤:在要加工的半导体器件结构上提供第一介电层,第一介电层可相对于半导体器件结构选择性地去除 ,并且在所述第一电介质层上形成无机介电抗反射涂层(DARC),所述DARC可相对于所述第一介电层选择性地去除。 抗蚀剂层在DARC上图案化。 抗蚀剂相对于DARC有选择性地可去除。 蚀刻半导体器件结构,并且选择性地去除抗蚀剂层,DARC和第一介电层。

    Method of making double-gated self-aligned finFET having gates of different lengths
    2.
    发明申请
    Method of making double-gated self-aligned finFET having gates of different lengths 失效
    制造具有不同长度的栅极的双门控自对准finFET的方法

    公开(公告)号:US20080176365A1

    公开(公告)日:2008-07-24

    申请号:US12077973

    申请日:2008-03-24

    IPC分类号: H01L21/336

    摘要: A method is provided of making a gated semiconductor device. Such method can include patterning a single-crystal semiconductor region of a substrate to extend in a lateral direction parallel to a major surface of a substrate and to extend in a direction at least substantially vertical and at least substantially perpendicular to the major surface, the semiconductor region having a first side and a second side opposite, e.g., remote from the first side. A first gate may be formed overlying the first side, the first gate having a first gate length in the lateral direction. A second gate may be formed overlying the second side, the second gate having a second gate length in the lateral direction which is different from the first gate length. In one embodiment, the second gate length may be shorter than the first gate length. In one embodiment, the first gate may consist essentially of polycrystalline silicon germanium and the second gate may consist essentially of polysilicon.

    摘要翻译: 提供了一种制造门控半导体器件的方法。 这种方法可以包括图案化衬底的单晶半导体区域,以在与衬底的主表面平行的横向方向上延伸并且沿至少基本上垂直且至少基本垂直于主表面的方向延伸,半导体 区域具有第一侧和第二侧,例如远离第一侧。 第一栅极可以形成在第一侧上,第一栅极在横向上具有第一栅极长度。 第二栅极可以形成在第二侧上,第二栅极在横向上具有与第一栅极长度不同的第二栅极长度。 在一个实施例中,第二栅极长度可以比​​第一栅极长度短。 在一个实施例中,第一栅极可以主要由多晶硅锗组成,第二栅极可以由多晶硅组成。

    Structure and method of forming a notched gate field effect transistor
    3.
    发明授权
    Structure and method of forming a notched gate field effect transistor 有权
    形成陷波栅场效应晶体管的结构和方法

    公开(公告)号:US07129564B2

    公开(公告)日:2006-10-31

    申请号:US11059819

    申请日:2005-02-17

    IPC分类号: H01L31/117

    摘要: The structure and method of forming a notched gate MOSFET disclosed herein addresses such problems as device reliability. A gate dielectric (e.g. gate oxide) is formed on the surface of an active area on the semiconductor substrate, preferably defined by an isolation trench region. A layer of polysilicon is then deposited on the gate dielectric. This step is followed by depositing a layer of silicon germanium) (SiGe). The sidewalls of the polysilicon layer are then laterally etched, selective to the SiGe layer to create a notched gate conductor structure, with the SiGe layer being broader than the underlying polysilicon layer. Sidewall spacers are preferably formed on sidewalls of the SiGe layer and the polysilicon layer. A silicide layer is preferably formed as a self-aligned silicide from a polysilicon layer deposited over the SiGe layer, to reduce resistance of the gate conductor. One or more other processing steps (e.g. source and drain implants, extension implants, and pocket lightly doped drain (LDD) implants), gate conductor stack doping, and silicidation are preferably performed in completing the transistor.

    摘要翻译: 本文公开的形成缺口栅极MOSFET的结构和方法解决了诸如器件可靠性的问题。 栅电介质(例如栅极氧化物)形成在半导体衬底上的有源区的表面上,优选由隔离沟槽区限定。 然后在栅极电介质上沉积多晶硅层。 该步骤之后是沉积一层硅锗)(SiGe)。 然后横向蚀刻多晶硅层的侧壁,对SiGe层有选择性,以产生刻蚀的栅极导体结构,其中SiGe层比下面的多晶硅层宽。 侧壁间隔物优选形成在SiGe层和多晶硅层的侧壁上。 硅化物层优选从沉积在SiGe层上的多晶硅层形成为自对准硅化物,以降低栅极导体的电阻。 优选在完成晶体管时执行一个或多个其它处理步骤(例如源极和漏极注入,延伸注入和袖带轻掺杂漏极(LDD)注入),栅极导体堆叠掺杂和硅化。

    Dual function FinFET, finmemory and method of manufacture
    4.
    发明授权
    Dual function FinFET, finmemory and method of manufacture 有权
    双功能FinFET,Finmemory和制造方法

    公开(公告)号:US07087952B2

    公开(公告)日:2006-08-08

    申请号:US10978951

    申请日:2004-11-01

    IPC分类号: H01L29/788

    摘要: A non-volatile storage cell in a Fin Field Effect Transistor (FinFET) and a method of forming an Integrated Circuit (IC) chip including the non-volatile storage cell. Each FET includes a control gate along one side of a semiconductor (e.g., silicon) fin, a floating gate along an opposite of the fin and a program gate alongside the floating gate. Control gate device thresholds are adjusted by adjusting charge on the floating gate.

    摘要翻译: Fin场效应晶体管(FinFET)中的非易失性存储单元以及形成包括非易失性存储单元的集成电路(IC)芯片的方法。 每个FET包括沿着半导体(例如硅)翅片的一侧的控制栅极,沿着鳍片的相对的浮动栅极和沿着浮动栅极的编程栅极。 通过调节浮动栅极上的电荷来调节控制栅极器件的阈值。

    Method of implanting using a shadow effect
    5.
    发明申请
    Method of implanting using a shadow effect 有权
    使用阴影效果进行植入的方法

    公开(公告)号:US20060024930A1

    公开(公告)日:2006-02-02

    申请号:US11235330

    申请日:2005-09-26

    IPC分类号: H01L21/425

    摘要: A semiconductor body has a first portion, a second portion, and an active area located between the first portion and the second portion. The first portion and the second portion are a shallow trench isolation region having an exposed surface extending above the surface of the active area. A first ion implantation is performed at a first angle such that a first shaded area defined by the exposed surface of the first portion and the first angle is exposed to fewer ions than a first unshaded area. A second ion implantation is performed at a second angle such that a second shaded area defined by the exposed surface of the second portion and the second angle is exposed to fewer ions than a second unshaded area.

    摘要翻译: 半导体本体具有位于第一部分和第二部分之间的第一部分,第二部分和有源区域。 第一部分和第二部分是具有在有源区域的表面上方延伸的暴露表面的浅沟槽隔离区域。 以第一角度执行第一离子注入,使得由第一部分的暴露表面限定的第一阴影区域和第一角度暴露于比第一未阴影区域更少的离子。 以第二角度执行第二离子注入,使得由第二部分的暴露表面限定的第二阴影区域和第二角度暴露于比第二未阴影区域更少的离子。

    Method of forming a collar using selective SiGe/Amorphous Si Etch
    6.
    发明授权
    Method of forming a collar using selective SiGe/Amorphous Si Etch 失效
    使用选择性SiGe /无定形Si蚀刻法形成套环的方法

    公开(公告)号:US06987042B2

    公开(公告)日:2006-01-17

    申请号:US10250046

    申请日:2003-05-30

    IPC分类号: H01L21/8242

    摘要: A method of forming collar isolation for a trench storage memory cell structure is provided in which amorphous Si (a:Si) and silicon germanium (SiGe) are first formed into a trench structure. An etching process that is selective to a:Si as compared to SiGe is employed in defining the regions in which the collar isolation will be formed. The selective etching process employed in the present invention is a wet etch process that includes etching with HF, rinsing, etching with NH4OH, rinsing, and drying with a monohydric alcohol such as isopropanol. The sequence of NH4OH etching and rinsing may be repeated any number of times. The conditions used in the selective etching process of the present invention are capable of etching a:Si at a faster rate than SiGe.

    摘要翻译: 提供了一种形成沟槽存储单元结构的套环隔离的方法,其中首先将非晶硅(a:Si)和硅锗(SiGe)形成沟槽结构。 与SiGe相比,对a:Si有选择性的蚀刻工艺用于限定将形成套环隔离的区域。 在本发明中采用的选择性蚀刻方法是湿式蚀刻工艺,其包括用HF蚀刻,漂洗,用NH 4 OH蚀刻,漂洗和用一元醇如异丙醇干燥。 NH 4 OH蚀刻和漂洗的顺序可以重复任意次数。 在本发明的选择性蚀刻工艺中使用的条件能够以比SiGe更快的速度蚀刻Si。

    Field effect transistor and method of fabrication

    公开(公告)号:US06579768B2

    公开(公告)日:2003-06-17

    申请号:US10066184

    申请日:2002-01-31

    IPC分类号: H01L21336

    CPC分类号: H01L29/1033 H01L21/76235

    摘要: An Insulated Gate Field Effect Transistor (IGFET), fabricated using Shallow Trench Isolation (STI), has an edge of a channel region of the IGFET which has a curved shape with a controlled radius of curvature so as to reduce the electric field at the edge of the channel region. A method of controlling the shape of the edge of the channel region is to limit the supply of oxygen to the region at the edge of the channel region during the oxidation process when the side walls of the silicon island, in which the transistor will be formed, are initially covered with a layer of silicon oxide.

    Spacer formation process using oxide shield
    9.
    发明授权
    Spacer formation process using oxide shield 有权
    隔板形成工艺采用氧化物屏蔽

    公开(公告)号:US06548344B1

    公开(公告)日:2003-04-15

    申请号:US09987956

    申请日:2001-11-16

    IPC分类号: H01L218242

    摘要: In the formation of a semiconductor structure, where spacer formation is strongly dependent on the structure (e.g. taper), the improvement of a spacer formation on a poly stud planarized to pad nitride where an oxide is formed on top of the poly prior to the pad nitride strip, so that after pad nitride removal, the poly is etched back and nitride is deposited conformal followed by anisotropic nitride RIE etch, so that the oxide protects the nitride underneath from being etched.

    摘要翻译: 在半导体结构的形成中,其中间隔物形成强烈地取决于结构(例如锥形),改善在平坦化为衬垫氮化物的多晶硅柱上的间隔物形成,其中在衬垫之前在聚氨酯的顶部上形成氧化物 氮化物条,使得在去除衬垫氮化物之后,将多晶硅回蚀刻,并且将氮化物保形共形,随后进行各向异性氮化物RIE蚀刻,使得氧化物保护下方的氮化物免受蚀刻。

    Dense chevron finFET and method of manufacturing same
    10.
    发明授权
    Dense chevron finFET and method of manufacturing same 有权
    密集人字形finFET及其制造方法

    公开(公告)号:US08963294B2

    公开(公告)日:2015-02-24

    申请号:US11857806

    申请日:2007-09-19

    摘要: A method, structure and alignment procedure, for forming a finFET. The method including, defining a first fin of the finFET with a first mask and defining a second fin of the finFET with a second mask. The structure including integral first and second fins of single-crystal semiconductor material and longitudinal axes of the first and second fins aligned in the same crystal direction but offset from each other. The alignment procedure including simultaneously aligning alignment marks on a gate mask to alignment targets formed separately by a first masked used to define the first fin and a second mask used to define the second fin.

    摘要翻译: 用于形成finFET的方法,结构和取向程序。 该方法包括:用第一掩模限定finFET的第一鳍片,并用第二掩模限定finFET的第二鳍片。 该结构包括单晶半导体材料的整体第一和第二鳍片以及第一和第二鳍片的纵向轴线在相同的晶体方向上排列但彼此偏移。 对准过程包括同时将栅极掩模上的对准标记对准由通过用于限定第一鳍片的第一掩模单独形成的对准靶和用于限定第二鳍片的第二掩模。