MEMS device using NiMn alloy and method of manufacture
    1.
    发明申请
    MEMS device using NiMn alloy and method of manufacture 有权
    使用NiMn合金的MEMS器件及其制造方法

    公开(公告)号:US20070222004A1

    公开(公告)日:2007-09-27

    申请号:US11386733

    申请日:2006-03-23

    IPC分类号: H01L29/82

    摘要: A material for forming a conductive structure for a MEMS device is described, which is an alloy containing about 0.01% manganese and the remainder nickel. Data shows that the alloy possesses advantageous mechanical and electrical properties. In particular, the sheet resistance of the alloy is actually lower than the sheet resistance of the pure metal. In addition, the alloy may have superior creep and higher recrystallization temperature than the pure metal. It is hypothesized that these advantageous material properties are a result of the larger grain structure existing in the NiMn alloy film compared to the pure nickel metal film. These properties may make the alloy appropriate for applications such as MEMS thermal electrical switches for telecommunications applications.

    摘要翻译: 描述了一种用于形成用于MEMS器件的导电结构的材料,其是含有约0.01%锰及其余镍的合金。 数据显示,该合金具有有利的机械和电学性能。 特别地,合金的薄层电阻实际上低于纯金属的薄层电阻。 此外,与纯金属相比,合金具有优异的蠕变和更高的再结晶温度。 假设这些有利的材料性质是与纯镍金属膜相比NiMn合金膜中存在较大的晶粒结构的结果。 这些性能可以使合金适用于诸如用于电信应用的MEMS热电开关的应用。

    Insect Trapping Device
    2.
    发明申请
    Insect Trapping Device 审中-公开
    昆虫捕获装置

    公开(公告)号:US20160255824A1

    公开(公告)日:2016-09-08

    申请号:US14640064

    申请日:2015-03-06

    申请人: John Foster

    发明人: John Foster

    IPC分类号: A01M3/00 A01M3/02

    CPC分类号: A01M3/005 A01M3/025

    摘要: An insect trapping device traps, kills and facilitates disposal of an insect. The device includes a handle which is hollow defining a conduit extending between a first end and a second end. A fan coupled to the handle in the conduit such that the fan provides suction into the first end of the handle. A cup is coupled to the first end of the handle for directing an insect into the first end of the handle. A receptacle is coupled to the second end of the handle and vented end such that the fan urges air flow out through the receptacle wherein the receptacle receives and holds the insect sucked through the first end of the handle.

    摘要翻译: 昆虫捕获装置捕获,杀死并促进昆虫的处置。 该装置包括一个手柄,该手柄是中空的,限定了在第一端和第二端之间延伸的导管。 风扇,其联接到管道中的把手,使得风扇向手柄的第一端提供抽吸。 杯子联接到手柄的第一端,以将昆虫引导到手柄的第一端。 容器连接到手柄的第二端和通风端,使得风扇促使空气通过容器流出,其中容器容纳并保持通过手柄的第一端吸入的昆虫。

    Low Temperature Etching of Silicon Nitride Structures Using Phosphoric Acid Solutions
    4.
    发明申请
    Low Temperature Etching of Silicon Nitride Structures Using Phosphoric Acid Solutions 失效
    使用磷酸溶液的氮化硅结构的低温蚀刻

    公开(公告)号:US20140011367A1

    公开(公告)日:2014-01-09

    申请号:US13541397

    申请日:2012-07-03

    IPC分类号: H01L21/306

    摘要: Provided are methods for processing semiconductor substrates. The methods involve etching silicon nitride structures using phosphoric acid solutions maintained at low temperatures, such as between about 110° C. and 130° C. These temperatures provide adequate etching rates and do not damage surrounding metal silicide and silicon oxide structures. The etching rates of silicon nitride may be 10 Angstroms per minute and greater. Lower temperatures also allow decreasing concentrations of phosphoric acid in the etching solutions, which in some embodiments may be less than 90 weight percent. As a result, more selective etching of the silicon nitride structures may be achieved. This selectivity may be as high as hundred times relative to the silicide and silicon oxide structures. The surface conductivity of the silicide structures may remain substantially unchanged by this etching process.

    摘要翻译: 提供了用于处理半导体衬底的方法。 该方法包括使用保持在低温(例如约110℃至130℃)之间的磷酸溶液来蚀刻氮化硅结构。这些温度提供足够的蚀刻速率,并且不会损坏周围的金属硅化物和氧化硅结构。 氮化硅的蚀刻速率可以为每分钟10埃或更高。 较低的温度也允许蚀刻溶液中磷酸的浓度降低,在一些实施方案中磷酸的浓度可以小于90重量%。 结果,可以实现对氮化硅结构的更多的选择性蚀刻。 相对于硅化物和氧化硅结构,该选择性可高达百倍。 通过该蚀刻工艺,硅化物结构的表面电导率可以保持基本不变。

    Large area plasma source
    8.
    发明授权
    Large area plasma source 失效
    大面积等离子体源

    公开(公告)号:US07400096B1

    公开(公告)日:2008-07-15

    申请号:US10894225

    申请日:2004-07-19

    IPC分类号: H01J7/24 C23F1/00 C23C14/00

    摘要: An all permanent magnet Electron Cyclotron Resonance, large diameter (e.g., 40 cm) plasma source suitable for ion/plasma processing or electric propulsion, is capable of producing uniform ion current densities at its exit plane at very low power (e.g., below 200 W), and is electrodeless to avoid sputtering or contamination issues. Microwave input power is efficiently coupled with an ionizing gas without using a dielectric microwave window and without developing a throat plasma by providing a ferromagnetic cylindrical chamber wall with a conical end narrowing to an axial entrance hole for microwaves supplied on-axis from an open-ended waveguide. Permanent magnet rings are attached inside the wall with alternating polarities against the wall. An entrance magnet ring surrounding the entrance hole has a ferromagnetic pole piece that extends into the chamber from the entrance hole to a continuing second face that extends radially across an inner pole of the entrance magnet ring.

    摘要翻译: 适用于离子/等离子体处理或电推进的大直径(例如,40厘米)等离子体源的全永磁电子回旋加速器共振能够以非常低的功率(例如,低于200W)在其出射平面处产生均匀的离子电流密度 ),并且是无电极的,以避免溅射或污染问题。 微波输入功率与离子化气体有效耦合,而不需要使用电介质微波窗口,而不需要通过提供一个铁磁性圆柱形腔室壁来形成喉部等离子体,该圆柱形腔室壁的锥形端部变窄到轴向入口孔,用于从开放端 波导。 永久磁铁环安装在墙壁内,与墙壁交替极性。 围绕入口孔的入口磁环具有铁磁极片,其从入口孔延伸到腔室中,延伸到径向穿过入口磁环的内极的连续的第二面。

    Compact MEMS thermal device and method of manufacture
    9.
    发明申请
    Compact MEMS thermal device and method of manufacture 审中-公开
    紧凑型MEMS热装置及其制造方法

    公开(公告)号:US20070096860A1

    公开(公告)日:2007-05-03

    申请号:US11263912

    申请日:2005-11-02

    IPC分类号: H01H61/00

    摘要: A MEMS thermal device is made in a smaller size by decreasing the distance that the two cantilevered portions, a spring cantilever and a latch cantilever, of the device must travel. The smaller distance is accomplished by positioning the two contact surfaces of the spring cantilever and the latch cantilever adjacent to each other in the quiescent state of the switch. When the switch is closed, the spring cantilever moves laterally to clear the contact surface of the latch cantilever, and then the latch cantilever moves its contact surface into position. To close the switch, the spring cantilever is allowed to relax and return to nearly its original position, except for the presence of the latch contact surface. When the spring cantilever is allowed to relax, it stays in the closed position because of friction or because of an angled shape of the contact surfaces.

    摘要翻译: 通过减小装置的两个悬臂部分(弹簧悬臂和闩锁悬臂)必须行进的距离来制造更小尺寸的MEMS热装置。 通过在开关的静止状态下将弹簧悬臂和闩锁悬臂的两个接触表面彼此相邻地定位,实现较小的距离。 当开关关闭时,弹簧悬臂横向移动以清除闩锁悬臂的接触表面,然后闩锁悬臂将其接触表面移动到位。 为了闭合开关,除了存在闩锁接触面之外,弹簧悬臂可以松弛并返回到其初始位置。 当弹簧悬臂被允许松弛时,由于摩擦或由于接触表面的成角度,它停留在关闭位置。

    Kufbag restraining device
    10.
    发明申请
    Kufbag restraining device 审中-公开
    Kufbag限制装置

    公开(公告)号:US20070039622A1

    公开(公告)日:2007-02-22

    申请号:US11401813

    申请日:2006-04-10

    IPC分类号: A61F5/37 A61B19/00

    CPC分类号: E05B75/00

    摘要: The invention provides a method and apparatus for prisoner restraint using a durable material having a front and rear side forming a bag. Attached to the front side of the material is webbing using a hook and loop velcro system. Grommet holes deposed in and through the material allow for plastic ties to pass through and secure the hands. A two-part buckle attaches to the webbing with one part affixed to the webbing and the other part affixed to the front side of the durable material preventing the use of the prisoner's hands for escape.

    摘要翻译: 本发明提供一种使用耐用材料的囚徒约束的方法和装置,其具有形成袋子的前侧和后侧。 连接到材料的正面是使用钩环尼龙搭扣系统进行织带。 通过材料排出的索环孔允许塑料连接件穿过并固定手。 两部分的扣环附着在织带上,一部分固定在织带上,另一部分固定在耐用材料的前侧,防止使用囚犯的手逃跑。