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公开(公告)号：US20070275506A1
公开(公告)日：2007-11-29
申请号：US11798095
申请日：2007-05-10
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
IPC分类号： H01L21/58
CPC分类号： H01L21/6835 , H01L23/5385 , H01L23/5388 , H01L24/48 , H01L24/73 , H01L24/81 , H01L27/0688 , H01L27/12 , H01L29/66757 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10253 , H01L2924/12034 , H01L2924/12042 , H01L2924/13063 , H01L2924/13064 , H01L2924/14 , H01L2924/1423 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3011 , H03H3/08 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
摘要翻译： 本发明的目的是提供一种在不使用半导体衬底的情况下集成各种元件的半导体器件及其制造方法。 根据本发明，在与衬底分离的衬底上形成包括电感器，电容器，电阻元件，TFT元件，嵌入布线等的待分离层，并转移到电路板 100。 通过线112或焊料107与设置在电路板100中的布线图案114进行导电，从而形成高频模块等。
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公开(公告)号：US08441102B2
公开(公告)日：2013-05-14
申请号：US13234639
申请日：2011-09-16
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
CPC分类号： H01L21/6835 , H01L23/5385 , H01L23/5388 , H01L24/48 , H01L24/73 , H01L24/81 , H01L27/0688 , H01L27/12 , H01L29/66757 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10253 , H01L2924/12034 , H01L2924/12042 , H01L2924/13063 , H01L2924/13064 , H01L2924/14 , H01L2924/1423 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3011 , H03H3/08 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
摘要翻译： 本发明的目的是提供一种在不使用半导体衬底的情况下集成各种元件的半导体器件及其制造方法。 根据本发明，在与衬底分离的衬底上形成包括电感器，电容器，电阻元件，TFT元件，嵌入布线等的待分离层，并转移到电路板 通过线112或焊料107与设置在电路板100中的布线图案114进行导电，从而形成高频模块等。
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公开(公告)号：US20080088034A1
公开(公告)日：2008-04-17
申请号：US11947835
申请日：2007-11-30
申请人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
IPC分类号： H01L23/50
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
摘要翻译： 本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。 根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。 术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。 在本发明中，通过转印技术制造集成电路膜。
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公开(公告)号：US07230316B2
公开(公告)日：2007-06-12
申请号：US10740606
申请日：2003-12-22
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
IPC分类号： H01L29/00 , H01L23/48 , H01L23/52 , H01L27/108 , H01L29/04
CPC分类号： H01L21/6835 , H01L23/5385 , H01L23/5388 , H01L24/48 , H01L24/73 , H01L24/81 , H01L27/0688 , H01L27/12 , H01L29/66757 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10253 , H01L2924/12034 , H01L2924/12042 , H01L2924/13063 , H01L2924/13064 , H01L2924/14 , H01L2924/1423 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3011 , H03H3/08 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
摘要翻译： 本发明的目的是提供一种在不使用半导体衬底的情况下集成各种元件的半导体器件及其制造方法。 根据本发明，在与衬底分离的衬底上形成包括电感器，电容器，电阻元件，TFT元件，嵌入布线等的待分离层，并转移到电路板 100。 通过线112或焊料107与设置在电路板100中的布线图案114进行导电，从而形成高频模块等。
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公开(公告)号：US07037752B2
公开(公告)日：2006-05-02
申请号：US10740422
申请日：2003-12-22
申请人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
IPC分类号： H01L21/44
CPC分类号： H01L25/50 , H01L21/2007 , H01L21/76251 , H01L23/3128 , H01L24/16 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83001 , H01L2224/92247 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06558 , H01L2225/06568 , H01L2924/00014 , H01L2924/01004 , H01L2924/01029 , H01L2924/01046 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/04941 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/00012 , H01L2924/00 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2224/45099
摘要： A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.
摘要翻译： 提供了一种用于制造低成本，小体积和高度集成的半导体器件的技术。 本发明的特征在于，通过使用半导体薄膜形成的半导体元件通过转印技术通过使用半导体衬底形成的半导体元件转印以制造半导体器件。 与以往的制造方法相比，能够实现成本低，吞吐量更高的半导体装置的批量生产，能够降低半导体装置的生产成本。
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公开(公告)号：US20050051870A1
公开(公告)日：2005-03-10
申请号：US10740606
申请日：2003-12-22
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
IPC分类号： H01L21/336 , H01L21/60 , H01L21/68 , H01L23/538 , H01L27/06 , H01L27/12 , H03H3/08 , H01L29/00
CPC分类号： H01L21/6835 , H01L23/5385 , H01L23/5388 , H01L24/48 , H01L24/73 , H01L24/81 , H01L27/0688 , H01L27/12 , H01L29/66757 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10253 , H01L2924/12034 , H01L2924/12042 , H01L2924/13063 , H01L2924/13064 , H01L2924/14 , H01L2924/1423 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3011 , H03H3/08 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
摘要翻译： 本发明的目的是提供一种在不使用半导体衬底的情况下集成各种元件的半导体器件及其制造方法。 根据本发明，在与衬底分离的衬底上形成包括电感器，电容器，电阻元件，TFT元件，嵌入布线等的待分离层，并转移到电路板 通过线112或焊料107与设置在电路板100中的布线图案114进行导电，从而形成高频模块等。
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公开(公告)号：US07303942B2
公开(公告)日：2007-12-04
申请号：US10735767
申请日：2003-12-16
申请人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
摘要翻译： 本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。 根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。 术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。 在本发明中，通过转印技术制造集成电路膜。
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公开(公告)号：US20060163710A1
公开(公告)日：2006-07-27
申请号：US11374037
申请日：2006-03-14
申请人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
CPC分类号： H01L25/50 , H01L21/2007 , H01L21/76251 , H01L23/3128 , H01L24/16 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83001 , H01L2224/92247 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06558 , H01L2225/06568 , H01L2924/00014 , H01L2924/01004 , H01L2924/01029 , H01L2924/01046 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/04941 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/00012 , H01L2924/00 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2224/45099
摘要： A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.
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公开(公告)号：US07863754B2
公开(公告)日：2011-01-04
申请号：US11374037
申请日：2006-03-14
申请人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
CPC分类号： H01L25/50 , H01L21/2007 , H01L21/76251 , H01L23/3128 , H01L24/16 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83001 , H01L2224/92247 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06558 , H01L2225/06568 , H01L2924/00014 , H01L2924/01004 , H01L2924/01029 , H01L2924/01046 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/04941 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/00012 , H01L2924/00 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2224/45099
摘要： A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.
摘要翻译： 提供了一种用于制造低成本，小体积和高度集成的半导体器件的技术。 本发明的特征在于，通过使用半导体薄膜形成的半导体元件通过转印技术通过使用半导体衬底形成的半导体元件转印以制造半导体器件。 与以往的制造方法相比，能够实现成本低，吞吐量更高的半导体装置的批量生产，能够降低半导体装置的生产成本。
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公开(公告)号：US07564139B2
公开(公告)日：2009-07-21
申请号：US11947835
申请日：2007-11-30
申请人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
IPC分类号： H01L29/40
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
摘要翻译： 本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。 根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。 术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。 在本发明中，通过转印技术制造集成电路膜。
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