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公开(公告)号：US20130163253A1
公开(公告)日：2013-06-27
申请号：US13822159
申请日：2011-09-27
CPC分类号： C08J7/06 , C08J7/045 , C08J2327/18 , H01L33/60 , H05K1/0274 , H05K1/189 , H05K3/285 , H05K2201/10106 , H05K2201/2054 , H05K2203/095
摘要： Provided is a flexible printed circuit board having excellent flexibility and a diffusely reflective white surface (white surface) which does not tend to undergo color change even when irradiated with light such as short-wavelength light, i.e., has high light deterioration resistance, and does not tend to undergo color change even when placed in a high-temperature environment, i.e., has excellent thermal deterioration resistance. The white reflective flexible printed circuit board includes a flexible printed circuit board and a surface constituted by a white reflective material layer. The white reflective material layer is composed of a resin composition containing a fluororesin and an inorganic white pigment. Lighting equipment includes the white reflective flexible printed circuit board and an LED mounted on the surface side constituted by the white reflective material layer of the white reflective flexible printed circuit board.
摘要翻译： 本发明提供柔性印刷电路板，具有优异的柔性和漫反射白色表面（白色表面），即使用诸如短波长光的光（即具有高的耐光劣化性）也不会发生颜色变化，并且 即使放置在高温环境下也不会发生颜色变化，即具有优异的耐热劣化性。 白色反光柔性印刷电路板包括柔性印刷电路板和由白色反射材料层构成的表面。 白色反射材料层由含有氟树脂和无机白色颜料的树脂组合物构成。 照明设备包括白色反光柔性印刷电路板和安装在由白色反光柔性印刷电路板的白色反射材料层构成的表面侧上的LED。
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公开(公告)号：US20130083513A1
公开(公告)日：2013-04-04
申请号：US13704597
申请日：2011-06-06
CPC分类号： F21S2/00 , F21V21/00 , G02F1/133 , G02F1/133615 , G02F2001/133601 , G02F2001/133628 , H01L33/64
摘要： A light source unit (100) switches one or more of light source groups (P, Q, R), each comprising one or more of light sources (110), ON and OFF for each light source group or each light source. The light source unit (100) includes: a flexible printed wiring board (120); one or more of light source groups (P, Q, R) mounted on a first surface of the flexible printed wiring board (120); and a metal support plate (130) attached to a second surface on the opposite side to the first surface of the flexible printed wiring board (120) via an adhesive layer (140). The heat conductivity of the adhesive layer (140) in the vertical direction is set so as to be less than the heat conductivity in a base material layer (121) of the flexible printed wiring board (120) in the vertical direction.
摘要翻译： 光源单元（100）为每个光源组或每个光源切换一个或多个光源组（P，Q，R），每个光源组包括一个或多个光源（110），ON和OFF。 光源单元（100）包括：柔性印刷布线板（120）; 安装在柔性印刷电路板（120）的第一表面上的一个或多个光源组（P，Q，R）; 以及金属支撑板（130），其经由粘合剂层（140）附接到与所述柔性印刷线路板（120）的所述第一表面相反的一侧的第二表面。 粘合剂层（140）在垂直方向上的导热率被设定为小于柔性印刷电路板（120）的基材层（121）在垂直方向上的导热率。
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3.发明授权公开(公告)号：US08155163B2
公开(公告)日：2012-04-10
申请号：US12531855
申请日：2008-01-29
申请人： Hirohisa Saito , Hideki Matsubara
发明人： Hirohisa Saito , Hideki Matsubara
IPC分类号： H01S5/00
CPC分类号： H01S5/18 , B82Y20/00 , H01L2224/48091 , H01L2224/48463 , H01S5/0206 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/105 , H01S5/2009 , H01S5/34333 , H01L2924/00014
摘要： A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.
摘要翻译： 光子晶体激光器包括n型衬底，n型覆盖层，有源层，p型覆盖层，光子晶体层，p型电极，n型电极和封装构件。 n型覆盖层形成在n型衬底的第一表面上。 有源层形成在n型覆层上。 p型覆盖层形成在有源层上。 光子晶体层形成在n型覆盖层与有源层之间或者在有源层与p型覆盖层之间，并且包括光子晶体部分。 p型电极形成在光子晶体部分上。 n型电极形成在第二表面上，并且包括布置在与光子晶体部分相对的位置的透光部分和具有比透光部分低的透光率的外周部分。
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4.发明申请SURFACE-EMITTING LASER ELEMENT, FABRICATION METHOD THEREOF, SURFACE-EMITTING LASER ARRAY, AND FABRICATION METHOD THEREOF 失效表面发射激光元件，其制造方法，表面发射激光阵列及其制造方法公开(公告)号：US20100172390A1
公开(公告)日：2010-07-08
申请号：US12376911
申请日：2007-05-21
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/0206 , H01S5/0215 , H01S5/105 , H01S5/18308 , H01S5/18341 , H01S5/3202 , H01S5/34333 , H01S5/423 , H01S2301/173
摘要： A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.
摘要翻译： 表面发射激光元件的制造方法包括制备包括高位错密度高电导区，低位错密度高电导区和低位错密度低电导区的导电GaN多区衬底作为导电 GaN衬底; 在衬底上形成包括发射层的多个III-V族化合物半导体层堆叠的半导体层堆叠形成步骤; 以及形成半导体侧电极和基板侧电极的电极形成工序。 形成半导体层和电极，使得载流子在发射层中流动的发射区域位于低位错密度高电导区域的跨度之内和之内。 因此，可以以良好的产率获得在发射区域具有均匀发光的表面发射激光元件。
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5.发明申请公开(公告)号：US20100103972A1
公开(公告)日：2010-04-29
申请号：US12531855
申请日：2008-01-29
申请人： Hirohisa Saito , Hideki Matsubara
发明人： Hirohisa Saito , Hideki Matsubara
CPC分类号： H01S5/18 , B82Y20/00 , H01L2224/48091 , H01L2224/48463 , H01S5/0206 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/105 , H01S5/2009 , H01S5/34333 , H01L2924/00014
摘要： A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.
摘要翻译： 光子晶体激光器包括n型衬底，n型覆盖层，有源层，p型覆盖层，光子晶体层，p型电极，n型电极和封装构件。 n型覆盖层形成在n型衬底的第一表面上。 有源层形成在n型覆层上。 p型覆盖层形成在有源层上。 光子晶体层形成在n型覆盖层与有源层之间或者在有源层与p型覆盖层之间，并且包括光子晶体部分。 p型电极形成在光子晶体部分上。 n型电极形成在第二表面上，并且包括布置在与光子晶体部分相对的位置的透光部分和具有比透光部分低的透光率的外周部分。
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6.发明授权Surface-emitting laser element, fabrication method thereof, surface-emitting laser array, and fabrication method thereof 失效表面发射激光元件及其制造方法，表面发射激光器阵列及其制造方法公开(公告)号：US08274088B2
公开(公告)日：2012-09-25
申请号：US12376911
申请日：2007-05-21
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/0206 , H01S5/0215 , H01S5/105 , H01S5/18308 , H01S5/18341 , H01S5/3202 , H01S5/34333 , H01S5/423 , H01S2301/173
摘要： A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor layer side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.
摘要翻译： 表面发射激光元件的制造方法包括制备包括高位错密度高电导区，低位错密度高电导区和低位错密度低电导区的导电GaN多区衬底作为导电 GaN衬底; 在衬底上形成包括发射层的III-V族化合物半导体层堆叠的半导体层堆叠形成步骤; 以及形成半导体层侧电极和基板侧电极的电极形成工序。 形成半导体层和电极，使得载流子在发射层中流动的发射区域位于低位错密度高电导区域的跨度之内和之内。 因此，可以以良好的产率获得在发射区域具有均匀发光的表面发射激光元件。
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公开(公告)号：US08658517B2
公开(公告)日：2014-02-25
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
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公开(公告)号：US20130137220A1
公开(公告)日：2013-05-30
申请号：US13814037
申请日：2012-03-26
申请人： Hideki Matsubara , Kuniaki Ishihara
发明人： Hideki Matsubara , Kuniaki Ishihara
IPC分类号： H01L21/50
CPC分类号： H01L21/50 , H01L21/187 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/81 , H01L33/0079 , H01L2224/03002 , H01L2224/0401 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/0603 , H01L2224/13144 , H01L2224/16225 , H01L2224/81005 , H01L2924/1033 , H01L2924/12041 , H01L2924/12042 , H01L2924/351 , H01L2924/00
摘要： A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.
摘要翻译： 制造GaN基半导体器件的方法包括以下步骤：制备复合衬底，该复合衬底包括：热膨胀系数相对于GaN的热膨胀系数不小于0.8且不大于1.2的支撑衬底 ; 以及使用离子注入分离方法结合到所述支撑衬底的GaN层; 在复合衬底的GaN层上生长至少一个GaN基半导体层; 以及通过溶解所述支撑基板来移除所述复合基板的所述支撑基板。 因此，提供了制造GaN基半导体器件的方法，通过其可以以高屈服比制造具有优异特性的GaN基半导体器件。
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公开(公告)号：US06420731B1
公开(公告)日：2002-07-16
申请号：US09603855
申请日：2000-06-26
申请人： Koji Katayama , Hideki Matsubara , Akihiko Saegusa
发明人： Koji Katayama , Hideki Matsubara , Akihiko Saegusa
IPC分类号： H01L2715
摘要： An injected current restriction region for restricting an increase in defects by restricting an injected current for light emission is provided inside a ZnSe-based LED. When an end of a light transmitting Au electrode is separated from a cleavage plane, a region near the cleavage plane serves as the injected current restriction region.
摘要翻译： 在ZnSe基LED内部设置用于通过限制用于发光的注入电流来限制缺陷增加的注入电流限制区域。 当透光性Au电极的端部与解理面分离时，解理面附近的区域成为注入电流限制区域。
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公开(公告)号：US5589429A
公开(公告)日：1996-12-31
申请号：US364497
申请日：1994-12-27
IPC分类号： C04B35/581 , C04B35/58
CPC分类号： C04B35/581
摘要： An aluminum nitride sintered body comprising aluminum nitride as a main component, a titanium compound, and an yttrium compound, wherein when the content of titanium and the content of yttrium both in terms of percentage by weight based on the aluminum nitride sintered body are plotted on an x-y coordinate system, with the titanium content as the x axis and the yttrium content as the y axis, the titanium content and the yttrium content each is within a region surrounded by the lines connecting points A and B, B and C, C and D, D and E, and E and A, inclusive of the lines the points A, B, C, D and E being:A (0.2, 2.0)B (0.2, 6.5)C (1.0, 10.25)D (2.2, 10.25)E (2.2, 5.0).
摘要翻译： 一种以氮化铝为主要成分的铝氮化物烧结体，钛化合物和钇化合物，其中当钛含量和钇含量以氮化铝烧结体为基准的重量百分数表示在 xy坐标系，钛含量为x轴，钇含量为y轴，钛含量和钇含量各自在连接点A和B，B和C，C和 A，B，C，D和E分别为：A（0.2,2.0）B（0.2,6.5）C（1.0,10.25）D（2.2， 10.25）E（2.2,5.0）。
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